CN105048971B - High efficiency Doherty power amplifier implementation method based on switched resonance structure - Google Patents
High efficiency Doherty power amplifier implementation method based on switched resonance structure Download PDFInfo
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Abstract
The present invention relates to a kind of Doherty power amplifier implementation methods based on switched resonance structure, and the switched resonance structure for inhibiting the higher harmonic components of auxiliary power amplifier is equipped with after auxiliary power amplifier, and auxiliary power amplifier is made to realize the work of E class；The switched resonance structure includes switch, and resistance, capacitor and the inductance in parallel being attached thereto；By optimizing inductance value, so that high-impedance behavior is presented in fundamental frequency, to harmonic wave in signal resonance, the orthogonality relation of ideal E class A amplifier A time domain voltage and current waveform is realized.Under the conditions of high linearity, the biggish efficiency for improving Doherty power amplifier.The inductance value of the novel switched resonance structure determines its working frequency, by reasonably calculating the inductance value in switched resonance structure, combines the Zero Current Switch for realizing E class power amplifier, guarantees to realize power amplifier efficientibility energy in working frequency range.
Description
Technical field
The invention belongs to microwave circuits field, in particular to a kind of high efficiency based on switched resonance structure
Doherty power amplifier implementation method.
Background technique
The efficiency of strict demand with wireless-modulated system to efficiency and the linearity, power amplifier becomes more and more important.?
Under conditions of guaranteeing the power amplifier linearity, high efficiency is obtained, it has also become the key technology of power amplifier development.
Currently, the method for some traditional raising power amplification efficiencies, for example, dynamic bias (Dynamic Bias
Control), LINC (Linear Amplification with Nonlinear Components) transmitter, envelope are deleted
With recovery (Envelope Elimination and Restoration, EER) and polar coordinate transmitter (Polar
Transmitter), it usually needs additional circuit and signal processing are used, this will lead to the raising of the complexity and cost of design,
The problems such as more serious while also result in Amplitude phase distortion, is restricted the raising of linearisation.
About the research of this aspect, Su Yongge of Huawei Tech Co., Ltd et al. has applied for entitled " Doherty power
The patent of invention of amplifier ", application No. is 2010106052711, but the patent is behind main power amplifier using novel compensation
The mode of line, the efficiency of Lai Tigao Doherty power amplifier, efficiency improve relatively limited.
Yong-Sub Lee et al. is in IEEE Microwave Wireless Components Letter periodical (IEEE
Microwave and wireless element flash report) on, " the Highly efficient Doherty amplifier based on that delivers
(the high efficiency Doherty amplifier based on E class topology exists Class-E topology for WCDMA applications "
The application of WCDMA) paper.Auxiliary power amplifier is used E class power amplifier by the technology, and efficiency is greatly improved, but proposed
Structure operates mainly in fundamental frequency, weaker for harmonics restraint, not can guarantee the higher linearisation of Doherty power amplifier
It is required that.
Summary of the invention
The purpose of the present invention is to provide a kind of efficient Doherty power amplifier realization sides realized using switched resonance structure
Method, the structure not only have band-pass filtering function, and the linearity is improved.The structure can also make auxiliary power amplifier realize E class simultaneously
Work, improves the efficiency of entire Doherty power amplifier.
In order to achieve the above object, the technical solution of the present invention is to provide a kind of Doherty based on switched resonance structure
Power amplifier implementation method, wherein Doherty power amplifier input terminal between output end, be all the way main power amplifier,
Another way is 90 degree of phase shifts and auxiliary power amplifier；
It is equipped with the switched resonance structure for inhibiting the higher harmonic components of auxiliary power amplifier after auxiliary power amplifier, makes auxiliary power amplifier
Realize the work of E class；The switched resonance structure includes switch, and resistance R, capacitor C and the inductance L in parallel being attached thereto；
Pass through formulaOptimize inductance value, so that high impedance is presented in fundamental frequency, to harmonic wave in signal resonance
Characteristic realizes the orthogonality relation of ideal E class A amplifier A time domain voltage and current waveform；Wherein ω is working frequency.
Preferably, the inductance value in switched resonance structure meets following relationship:
In the maximum operating frequency f of E class power amplifiermaxWhen, the shunt inductance that parasitic inductance l is switched on and off resonance structure is absorbed,
The crest voltage that drains is equal to the drain breakdown voltage V of transistordmax；
Wherein, PoFor power amplifier output power.
Preferably, according to the following formula:
Wherein, R, C and L are resistance, capacitor and the inductance in resonant network；
By improving load impedance RLLow reactance-resistance ratio drops, with formed dynamic input resistance to the dynamic electric resistor of auxiliary power amplifier into
Row matching；It is worth bandpass characteristics using the height-Q of switched resonance structure, realizes and auxiliary power amplifier output signal is filtered.
Preferably, output power be more than 30dBm or more it is high-power under the conditions of, auxiliary power amplifier start to work；Pass through tune
The capacitance of whole switched resonance structure, adjusts the output phase of auxiliary power amplifier, thus in auxiliary power amplifier and main power amplifier output signal
After being synthesized, inhibits unwanted distortion phase signal, improve the linearity of Doherty power amplifier.
Preferably, in the Doherty power amplifier, the relative dielectric constant ε of medium substraterRange of choice be 2
Between~5, σ≤10 loss tangent tg-3；Dielectric thickness h is 0.6~0.8mm.
The present invention bring it is following the utility model has the advantages that
Switched resonance structure will be added in the present invention in the auxiliary power amplifier of traditional Doherty power amplifier, realize Doherty function
The high efficiency put；Using the height-Q performance of switched resonance structure, bandpass filtering performance is realized, guarantee the linearity, the processing is simple, easily
It is integrated in other microwave circuits, there is very strong practicability and application prospect.
Switched resonance structure is applied in Doherty power amplifier by the present invention, works in fundamental frequency, shows to harmonic wave
High-impedance behavior approaches ideal E class power amplifier so that time domain voltage and current waveform be made to be optimized.It can guarantee the high line of power amplifier
Property degree under conditions of, the biggish efficiency for improving entire Doherty power amplifier.External signal processing circuit is not needed, structure is simple,
With wide practical value.
Its signal resonance shows high-impedance behavior to harmonic wave in fundamental frequency, by optimizing inductance value, makes time domain voltage
Optimized with current waveform, approaches the orthogonality relation of ideal E class A amplifier A time domain voltage and current waveform.
By adjusting the capacitance in resonant network after auxiliary power amplifier, under the conditions of high-power, the defeated of auxiliary power amplifier is adjusted
Phase out inhibits unwanted distortion phase signal to be synthesized with main power amplifier output signal, under the conditions of high efficiency,
Improve the linearity of entire Doherty power amplifier.
Detailed description of the invention
Fig. 1 is the schematic diagram of the switched resonance structure in the present invention；
Fig. 2 is the overall structure diagram of the Doherty power amplifier in the present invention based on switched resonance structure；
Fig. 3 is to whether there is or not the comparison figures of the test result of Doherty power amplifier when resonant network and simulation result.
Specific embodiment
Illustrate the preferred embodiment of the present invention with reference to the accompanying drawing.
Design principle of the invention is as follows:
Cooperation referring to shown in Fig. 1, Fig. 2, the input terminal of Doherty power amplifier of the invention between output end, all the way based on
Power amplifier is all the way 90 degree of phase shifts and auxiliary power amplifier, and after auxiliary power amplifier be added have switched resonance structure (or switch it is humorous
Vibrating network), to inhibit the higher harmonic components of auxiliary power amplifier；By the switched resonance structure, the E class work of auxiliary power amplifier is realized
Make mode, under the conditions of high linearity, the biggish efficiency for improving Doherty power amplifier.In the switched resonance structure, pass through
Using different inductance values, the selection to Doherty power amplifier working frequency is realized；Also, utilize the switched resonance structure
Height-Q (about 200 or so) performance realizes band-pass filtering function, inhibits the harmonic wave and spurious signal of E class auxiliary power amplifier, to improve
The linearity of entire Doherty power amplifier.
The specific implementation process of the preferred embodiment of the present invention is as follows:
1, switched resonance inside configuration parameter determines
Switched resonance inner parameter as shown in Figure 1, the structure by switching, and resistance in parallel, capacitor and inductance composition.Change
The maximum voltage V born into the parasitic inductance l of type E class power amplifier and drain electrodedIt is the principal element for restricting its working frequency.Modified
The maximum operating frequency f of E class power amplifiermaxRefer to it in this frequency, parasitic inductance is absorbed by shunt inductance completely, and drain peak
Threshold voltage is just equal to the drain breakdown voltage V of transistordmax。
Its empirical formula are as follows:
Wherein, PoFor power amplifier output power, work as fmax、VdmaxAnd PoWhen for known numerical value, by the formula, it can determine
Inductance value in switched resonance structure.
2, the Zero Current Switch of switched resonance structure determines
Switched resonance structure can make the reduction of transistor crest voltage, improve the safety of power device.The structure exists
Under equal-wattage and condition of power supply, output impedance increases, and efficiency caused by this can reduce because of spurious impedance, conduction impedance drops
It is low, and be conducive to the realization of match circuit.Inductance value reduces in circuit simultaneously, also reduces the spurious impedance bring of inductance
Loss.
By using the resonant network, output impedance can pass throughFormula flexibly adjustment, parasitic electricity
Sense can also be absorbed by resonant parallel inductance.Wherein, R, C and L are resistance, capacitor and the inductance in resonant network, and ω is work
Working frequency.By verification experimental verification, resistance R is 20 Ω, and inductance L is 9nH, when capacitor C is 180pF, relative to no switched resonance knot
The Doherty power amplifier of structure, entire efficiency of amplitude, which improves, is greater than 5~6%, linearity IMD3Improve 23~25dB or so.
That is, can approximatively calculate load resistance by above formula using the energy being stored in resonator；Load impedance reduces
When, the power consumption proportion of conduction impedance will increase, therefore improve efficiency shape frequently with drop low reactance-resistance ratio (i.e. raising load impedance)
At dynamic input resistance, the dynamical resistor matching of auxiliary power amplifier is realized.
3, the determination of resonance structure parameter
When transistor enters off state from conducting, the electric current for flowing through transistor meets two boundary conditions: when humorous
Vibrating network meetsWhen, it can be realized Zero Current Switch (Zero current switching, ZCS) and zero current
Derivative switches (Zero current derivate switching, ZCDS), to realize E class power amplifier.
By the optimization to resonant network parameter, especially inductance value, makes signal resonance in fundamental frequency, harmonic wave is presented
High-impedance behavior out passes through formulaOptimize inductance value, combine load resistance, when realizing ideal E class A amplifier A
The orthogonality relation of domain voltage and current waveform.
4, the adjustment of the capacitance in resonant network
Under the conditions of high-power (output power is more than 30dBm or more), auxiliary power amplifier is started to work, after adjusting auxiliary power amplifier
The capacitance of face resonant network just adjusts the output phase of auxiliary power amplifier, capacitance and output phase in specific resonant network
Relationship is shown in Table shown in one, and last auxiliary power amplifier is synthesized with main power amplifier output signal, inhibits unwanted distortion phase signal,
Under the conditions of high efficiency, the linearity of entire Doherty power amplifier is improved.
The relationship of table one resonant network capacitance and output phase
By adjusting the capacitance of resonant network, the biggish linearity IMD for improving entire Doherty power amplifier3Index,
With the Doherty power amplifier IMD of resonance free network3Performance comparison it is as shown in Figure 3.
5, the selection of medium substrate
The general range of choice of the relative dielectric constant of medium substrate are as follows: εrBetween=2~5, meanwhile, loss angle tangent is answered
It is small as far as possible, generally take σ≤10 tg-3；Since Doherty power amplifier operates mainly in 2~3GHz or so, then bigger tg σ value can also
With, at the same consider convenient for other circuit integrations, taking dielectric thickness h is 0.6~0.8mm or so.
In conclusion the present invention realizes a kind of high efficiency Doherty power amplifier, in the auxiliary function of Doherty power amplifier
Switched resonance structure is added after putting, inhibits the higher harmonic components of auxiliary power amplifier；The E class working method for realizing auxiliary power amplifier,
Under the conditions of high linearity, the biggish efficiency for improving Doherty power amplifier.The inductance value of the novel switched resonance structure determines
Its working frequency combines the zero current for realizing E class power amplifier by reasonably calculating the inductance value in switched resonance structure
Switch guarantees to realize power amplifier efficientibility energy in working frequency range.The present invention can satisfy present field of wireless communication to function
Efficient requirement is put, there is very strong practicability and application prospect.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (3)
1. a kind of Doherty power amplifier implementation method based on switched resonance structure, which is characterized in that
The input terminal of Doherty power amplifier is all the way main power amplifier between output end, and another way is 90 degree of phase shifts and auxiliary
Power amplifier；
It is equipped with the switched resonance structure for inhibiting the higher harmonic components of auxiliary power amplifier after auxiliary power amplifier, realizes auxiliary power amplifier
The work of E class；The switched resonance structure includes switch, and resistance R, capacitor C and the inductance L in parallel being attached thereto；
Pass through formulaOptimize inductance value, so that high-impedance behavior is presented in fundamental frequency, to harmonic wave in signal resonance,
Realize the orthogonality relation of ideal E class A amplifier A time domain voltage and current waveform；Wherein ω is working frequency；
Inductance value in switched resonance structure meets following relationship:
In the maximum operating frequency f of E class power amplifiermaxWhen, the shunt inductance that parasitic inductance l is switched on and off resonance structure is absorbed, drain electrode
Crest voltage is equal to the drain breakdown voltage V of transistordmax；
Wherein, PoFor power amplifier output power；
In the Doherty power amplifier, the relative dielectric constant ε of medium substraterRange of choice be 2~5 between, loss
Angle σ≤10 tangent value tg-3；Dielectric thickness h is 0.6~0.8mm.
2. Doherty power amplifier implementation method as described in claim 1, which is characterized in that
According to the following formula:
Wherein, R, C and L are resistance, capacitor and the inductance in resonant network；
By improving load impedance RLLow reactance-resistance ratio is dropped, is carried out with forming dynamic input resistance to the dynamic electric resistor of auxiliary power amplifier
Match；It is worth bandpass characteristics using the height-Q of switched resonance structure, realizes and auxiliary power amplifier output signal is filtered.
3. Doherty power amplifier implementation method as described in claim 1, which is characterized in that
Output power be more than 30dBm or more it is high-power under the conditions of, auxiliary power amplifier start to work；
By adjusting the capacitance of switched resonance structure, the output phase of auxiliary power amplifier is adjusted, thus in auxiliary power amplifier and main function
It puts after output signal synthesized, inhibits unwanted distortion phase signal, improve the linearity of Doherty power amplifier.
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| CN105915182B (en) * | 2016-04-11 | 2018-07-27 | 重庆邮电大学 | Post-distortion linearization Doherty power amplifier based on ferroelectric capacitor |
| CN106656054B (en) * | 2016-10-14 | 2020-05-26 | 重庆邮电大学 | High-linearity Doherty power amplifier based on active non-Foster circuit |
| CN107395131B (en) * | 2017-08-15 | 2020-05-19 | 维沃移动通信有限公司 | Doherty power amplifier and mobile terminal |
Citations (3)
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|---|---|---|---|---|
| CN1479969A (en) * | 2000-10-10 | 2004-03-03 | ���������Ǽ���Э�� | Class E/F switching power amplifiers |
| CN101669281A (en) * | 2007-04-20 | 2010-03-10 | 富士通株式会社 | Amplifier apparatus |
| CN102142812A (en) * | 2010-12-17 | 2011-08-03 | 华为技术有限公司 | Doherty power amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5217182B2 (en) * | 2007-02-22 | 2013-06-19 | 富士通株式会社 | High frequency amplifier circuit |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1479969A (en) * | 2000-10-10 | 2004-03-03 | ���������Ǽ���Э�� | Class E/F switching power amplifiers |
| CN101669281A (en) * | 2007-04-20 | 2010-03-10 | 富士通株式会社 | Amplifier apparatus |
| CN102142812A (en) * | 2010-12-17 | 2011-08-03 | 华为技术有限公司 | Doherty power amplifier |
Non-Patent Citations (3)
| Title |
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| "E类功率放大器研究";游飞;《中国博士学位论文全文数据库信息科技辑》;20110515;第I135-34页，正文第32-33页第2.2.2节 |
| "E类及逆E类射频功率放大器的研究";方智奇;《中国优秀硕士学位论文全文数据库信息科技辑》;20140715;第I135-211页，正文第40-45页第3.2节 |
| "高效率Doherty功率放大器的研究";潘国强;《中国优秀硕士学位论文全文数据库信息科技辑》;20110315;第I135-243页，正文第16-23页第3.1节，第33-34页第4.2节，第47-51页第5.1节 |
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