CN205232208U - Radiofrequency emitting module , subassembly and phased array antenna based on super broad band power amplifier chip - Google Patents
Radiofrequency emitting module , subassembly and phased array antenna based on super broad band power amplifier chip Download PDFInfo
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- CN205232208U CN205232208U CN201521113735.1U CN201521113735U CN205232208U CN 205232208 U CN205232208 U CN 205232208U CN 201521113735 U CN201521113735 U CN 201521113735U CN 205232208 U CN205232208 U CN 205232208U
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- power amplifier
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Abstract
The utility model discloses a radiofrequency emitting module, subassembly and phased array antenna based on super broad band power amplifier chip, radiofrequency emitting module includes first promotion level amplifier, merit subnetwork, four transmissiones passageway, power module and ripples accuse microwave daughter boards, the radio frequency emission subassembly is by two radiofrequency emitting module is face -to -face each other to form for the laminating of mirror image ground, phased array antenna is by 8 or 8 integral multiple the radio frequency emission subassembly is fixed side by side to make up in a shell and is formed. The utility model discloses a power amplifiers at different levels realize by super broad band power amplifier chip that this chip uses the low voltage power supply, and with low costs, nonlinear characteristic is good, are convenient for realize that power is synthetic.
Description
Technical field
The utility model relates to a kind of high-frequency radiator, particularly relates to a kind of radio-frequency transmissions assembly based on distributed power amplifier chip and phased array antenna.
Background technology
Existing Microwave emission assembly volume is large, power consumption is large, quality is large, function is simple, circuit level is lower, and operating frequency is lower, groundwork in, as C-band, X-band and Ku wave band etc., cannot meet the requirement that radar and countermeasures set operating frequency improve constantly.
The Chinese utility model patent " Ku wave band 4 road emitting module " being CN203299374U as Authorization Notice No. discloses a kind of 4 channel emission assemblies working in Ku wave band, it does not have modularization, each transmission channel can not independently control, heavier mass, reach 450 grams, size is also comparatively large, is unfavorable for the integrated formation phased array radar of multimode.
Existing Microwave emission assembly is integrated into master with single functional chip, and also have and adopt discrete device to realize, its integrated level, volume, weight, power consumption, heat-sinking capability aspect exist inferior position.Microwave communication and radar detection wave frequency used more and more higher, wavelength is shorter and shorter, just must reduce the size of transmitter.Existing plane microelectronics assewbly density, close to the theoretic limit, can not meet the application requirement of communication system of new generation, microwave or millimetre-wave radar.
Utility model content
The purpose of this utility model is that microwave current emitting module operating frequency is low, volume and weight is large, heat dispersion is poor and each transmission channel can not independently control, and cannot meet the technical problem of microwave telecommunication system requirement in order to solve.
In order to solve the problems of the technologies described above, on the one hand, the utility model provides a kind of radiofrequency emitting module based on distributed power amplifier chip, comprises the first promotion level amplifier, power division network, four transmission channels, power module and ripple control microwave daughter boards;
Radiofrequency signal is divided into four tunnels after promoting level amplifier and described power division network through described first successively, and four tunnel radiofrequency signals deliver to four described transmission channels respectively;
Each described transmission channel comprises digital phase shifter and transmitting antenna, and described ripple control microwave daughter board connects the described digital phase shifter of each transmission channel respectively.
Further, also on described digital phase shifter, be integrated with digital pad, described ripple control microwave daughter board also connects each described digital pad respectively.
Further, also in each described transmission channel, be provided with the second promotion level amplifier, the described second input promoting level amplifier connects the output of described digital phase shifter, and the second output promoting level amplifier connects described transmitting antenna.
Further, also in each described transmission channel, be provided with final amplifier, the input of described final amplifier connects the output that described second promotes level amplifier, and the output of final amplifier connects described transmitting antenna.
Further, described final amplifier is made up of distributed power amplifier chip.
Further, described second promotion level amplifier is made up of distributed power amplifier chip.
Further, described first promotion level amplifier is made up of distributed power amplifier chip.
Further, described digital phase shifter is six bit digital phase shifters.
Further, the service band of described radiofrequency emitting module is K-band or Ka wave band.
Further, it is characterized in that, described ripple control microwave daughter board comprises detecting unit, computing unit, drive circuit and interface circuit, and described interface circuit is connected respectively to host computer, described detecting unit and described computing unit; Described detecting unit is connected to described digital phase shifter, described digital pad and described computing unit respectively; Described computing unit connects described drive circuit.
On the other hand, the utility model provides a kind of radio-frequency transmissions assembly based on distributed power amplifier chip, and comprise two above-mentioned radiofrequency emitting modules, the radiofrequency emitting module described in two fits together face-to-face each other mirror image.
Further, thermal hole is provided with between two described radiofrequency emitting modules.
Further, heat conductive rod is provided with in described thermal hole.
Another aspect, the utility model provides a kind of phased array antenna, and described phased array antenna comprises the above-mentioned radio-frequency transmissions assembly of n group, and n is the integral multiple of 8 or 8;
Each described radio-frequency transmissions assembly is fixed in a shell side by side, to form described phased array antenna.
The utility model is based on the radiofrequency emitting module of four-way, fit together the radiofrequency emitting module mirror image of two four-ways formation eight channel radio frequency emitting module, and thermal hole is provided with between the radiofrequency emitting module of two four-ways, the velocity of wave electric scanning phased array antenna of integral multiple passage of 64 passages or 64 is formed by the eight channel radio frequency emitting module assembled side-by-side of integral multiple of 8 or 8, there is volume little, the advantages such as integrated level is high, and power consumption is little, and heat-sinking capability is good; First promotion level amplifier can be set before power division network, second promotion level amplifier and final amplifier is set after digital phase shifter, power amplifier at different levels realizes by distributed power amplifier chip, this chip uses low-tension supply, cost is low, and nonlinear characteristic is good, is convenient to realize power combing, and chip volume is little, integrated level is high; Solve self-excitation problem by a point chamber, sub-module mode, reliability is high; Use digital phase shifter, by the phase shift of ripple control microwave daughter board control figure phase shifter, thus realize the electric scanning of Microwave emission wave beam, have control simple, without the need to D/A converting unit, the advantage such as reproducible, low in energy consumption, temperature stability is good; Transmitter module adopts low-temperature co-fired ceramic substrate and monolithic integrated microwave circuit plate composite structural design, provide convenience to low frequency power supply and control line and the layering of RF signal, substrate machining accuracy and clear size of opening also ensure that the realizability of layout, silica-alumina ceramic material is used to carry out radio frequency substrate manufacture, have lightweight, Heat stability is good, the capacity of heat transmission strong, be easy to the advantages such as processing, the compound substrate structure related to all has carried out zone isolation to power supply, control, all electrical connection vias all use diplopore to realize, and ensure the reliability of whole transmitter system.
Accompanying drawing explanation
Fig. 1 is the theory diagram of a four-way radiofrequency emitting module of the present utility model embodiment;
Fig. 2 is the theory diagram of Fig. 1 medium wave control microwave daughter board embodiment;
Fig. 3 is that four-way radiofrequency emitting module of the present utility model is at the on-chip floor plan schematic diagram of microwave circuit;
Fig. 4 is the structural representation of eight channel radio frequency emitting modules of the present utility model.
In figure: first promotes level amplifier 1; Power division network 2; Digital phase shift attenuator 3; Second promotes level amplifier 4; Final amplifier 5; Transmitting antenna 6; Ripple control microwave daughter board 7; Power module 8; Low frequency plug receptacle 9; Radio frequency interface 10; Thermal hole 11; Transmission channel 12; Microwave circuit substrate 13; Substrate 14; Four-way radiofrequency emitting module A, B.
Embodiment
By reference to the accompanying drawings the utility model is described in further detail now.These accompanying drawings are the schematic diagram of simplification, only basic structure of the present utility model are described in a schematic way, and therefore it only shows the formation relevant with the utility model.
As shown in Figure 1, be the theory diagram of an embodiment of the utility model four-way radiofrequency emitting module.Radiofrequency signal enters the first promotion level amplifier 1 through input, the power division network 2 delivering to one point four after level amplifier 1 amplifies is promoted through first, one tunnel radiofrequency signal is divided into four tunnels, every route digital phase shift attenuator 3, second promotes level amplifier 4, final amplifier 5 and transmitting antenna 6 and forms a transmission channel, form transmission channel one to transmission channel four respectively, ripple control microwave daughter board 7 is connected respectively to four railway digital phase shift attenuators 3, and power module 8 provides power supply for four-way radiofrequency emitting module.Wherein digital phase shift attenuator 3 adopts integrated form device, integrates, 6 bit digital phase shifters and digital pad to reduce volume; First promotion level amplifier 1, second promotes level amplifier 4 and final amplifier 5 realizes by distributed power amplifier chip, and this chip uses low-tension supply, and cost is low, and nonlinear characteristic is good, and be convenient to realize power combing, and chip volume is little, integrated level is high.
As shown in Figure 2, be the theory diagram of an embodiment of Fig. 1 medium wave control microwave daughter board 7, comprise detecting unit, computing unit, drive circuit and interface circuit, interface circuit is connected respectively to host computer, detecting unit and computing unit; Detecting unit is connected to digital phase shift attenuator 3, for detecting radiofrequency signal phase-shift phase and attenuation in real time, and testing result is delivered to computing unit by interface circuit; Computing unit connects drive circuit, for according to from the radiofrequency signal phase value preset of host computer and yield value and the testing result from detecting unit, by drive circuit, the phase place of digital phase shift attenuator 3 and attenuation is adjusted to desired value.Corresponding each digital phase shift attenuator 3 has a drive circuit, namely comprises drive circuit one to drive circuit four.
As shown in Figure 3, four transmission channels 12 of four-way radiofrequency emitting module are evenly arranged on microwave circuit substrate 13, and microwave circuit substrate 13 is installed on the substrate 14.Microwave circuit substrate 13 can adopt low-temperature co-fired ceramic substrate and monolithic integrated microwave circuit plate composite structural design.This provides convenience to low frequency power supply and control line and the layering of RF signal, and substrate machining accuracy and clear size of opening also ensure that the realizability of layout.Use silica-alumina ceramic material to carry out radio frequency substrate manufacture, have lightweight, Heat stability is good, the capacity of heat transmission strong, be easy to the advantages such as processing.The compound substrate structure that the utility model relates to all has carried out zone isolation to power supply, control, and all electrical connection vias all use diplopore to realize, and ensure the reliability of whole transmitter system.In one embodiment, microwave circuit substrate 13 also can adopt Multilayer printed circuit board structure to substitute LTCC structure.Substrate 14 can be made up of aluminium silicon carbide or kovar alloy material.
Fig. 4 is the structural representation of the eight channel radio frequency emitting modules be assembled into by two four-way radiofrequency emitting modules.The output of two four-way radiofrequency emitting module A and B is consistent, and input is mirror image each other, ensure two demifacets combine after the position of low-and high-frequency plug-in unit 9,10 of input be still consistent.The length of eight channel radio frequency emitting modules after assembling, width, thickness are respectively 48 millimeters, 28.4 millimeters, 6.1 millimeters, radio-frequency input signals is inputted by radio frequency interface 10, as SMP interface, thermal hole 11 is provided with between two four-way radiofrequency emitting modules, can radiating tube be imbedded in thermal hole, the heat dispersion of hoisting module, and low frequency plug receptacle 9 can be provided with, rectangular connector as micro-in J30J, for the low-frequency control signal line of the supply lines and ripple control microwave daughter board 7 that connect power module 8.
The main measurement technology parameter of the utility model emitting module is as follows:
Frequency range: 18-40GHz (point K-band and Ka wave band two sections realization);
Link gain: >=31dB;
Single channel power output: >=29dBm;
Digital phase shifter phase shifting accuracy :≤± 5 ° (in band each point);
Digital phase shifter switching time :≤80ns;
Assembly full zero state phase equalization :≤± 5 ° (in respective frequency range);
Assembly full zero state amplitude coincidence :≤± 1dB (in respective frequency range);
Channel isolation: >=18dB;
Input and output standing-wave ratio :≤1.5:1;
Component efficiency: >=13%;
2X4 modular assembly size: length is less than or equal to 48mm, wide 28.4mm, height 6.1mm;
2X4 module weight :≤40g;
Operating temperature range :-40 DEG C-+60 DEG C;
Relative humidity: 95%;
Control mode: TTL rs 232 serial interface signal controls;
Mechanical interface installed surface flatness 0.1mm/100mm, roughness Ra 3.2.
From these actual measurement parameters, emitting module of the present utility model has the ultra broadband of 22GHz, and link gain is high, and it is high that phase shifting accuracy high-band carrys out wave beam scan control precision, and emitting module efficiency is high, the plurality of advantages such as volume is little, lightweight.
In one embodiment, be arranged in a shell by one line for eight channel radio frequency emitting modules shown in 8 Fig. 4, form the phased array antenna with 64 active transmission channels.Each transmission channel has identical structure and separate, all comprises 6 bit digital phase shift attenuators 3, second and promotes level amplifiers 4, final amplifier 5 and transmitting antenna 6.Control circuit is made up of ripple control microwave daughter board 7.Supply lines and control line adopt the micro-rectangular connector of J30J to access each transmitter module by low frequency plug receptacle 10.As distortion, eight channel radio frequency emitting modules of the multiple of 16,24 etc. 8 can be adopted, form the phased array antenna of doubly several passages with 128,192 etc. 64.
When manufacturing above-mentioned phased array antenna, generally through following steps:
(1) the four-way radiofrequency emitting module described in Fig. 1 is formed;
(2) eight channel radio frequency emitting modules described in Fig. 4 are formed: eight channel radio frequency emitting modules are fitted each other face-to-face by two four-way radiofrequency emitting modules in step (1) mirror image and formed; Thermal hole 11 can be provided with between two four-way radiofrequency emitting modules, in thermal hole, can radiating tube be imbedded, with the heat dispersion of hoisting module;
(3) phased array antenna is formed: phased array antenna is fixed on side by side in a shell by n group radio-frequency transmissions assembly in step (2) and combines, and n is the integral multiple of 8 or 8.
During phased array antenna work, radiofrequency signal inputs each four-way radiofrequency emitting module, enter the first promotion level amplifier 1 and carry out pre-gain amplification, 4 tunnels are divided into again after power division network 2, send into each independently transmission channel respectively, for transmission channel one, radiofrequency signal enters after 6 bit digital phase shift attenuators 3 carry out digital phase shift and decay and sends into the second promotion level amplifier 4 successively and final amplifier 5 carries out drive amplification, high power amplifies, through phase shift, decay and power amplification after radio frequency output signal be connected to transmitting antenna 6 by SMP-J radio frequency interface 10, settling signal emission function.Control system transmits control signal to the digital phase shift attenuator 3 of each transmission channel by ripple control microwave daughter board 7, and adjustment phase place is so that the scanning angle of control antenna front wave beam.
With above-mentioned according to desirable embodiment of the present utility model for enlightenment, by above-mentioned description, relevant staff in the scope not departing from this utility model technological thought, can carry out various change and amendment completely.The technical scope of this utility model is not limited to the content on specification, must determine its technical scope according to right.
Claims (14)
1. based on the radiofrequency emitting module of distributed power amplifier chip, it is characterized in that, comprise the first promotion level amplifier, power division network, four transmission channels, power module and ripple control microwave daughter boards;
Radiofrequency signal is divided into four tunnels after promoting level amplifier and described power division network through described first successively, and four tunnel radiofrequency signals deliver to four described transmission channels respectively;
Each described transmission channel comprises digital phase shifter and transmitting antenna, and described ripple control microwave daughter board connects the described digital phase shifter of each transmission channel respectively.
2. the radiofrequency emitting module based on distributed power amplifier chip according to claim 1, is characterized in that, also on described digital phase shifter, is integrated with digital pad, and described ripple control microwave daughter board also connects each described digital pad respectively.
3. the radiofrequency emitting module based on distributed power amplifier chip according to claim 2, it is characterized in that, also in each described transmission channel, be provided with the second promotion level amplifier, described second input promoting level amplifier connects the output of described digital phase shifter, and the second output promoting level amplifier connects described transmitting antenna.
4. the radiofrequency emitting module based on distributed power amplifier chip according to claim 3, it is characterized in that, also in each described transmission channel, be provided with final amplifier, the input of described final amplifier connects the output that described second promotes level amplifier, and the output of final amplifier connects described transmitting antenna.
5. the radiofrequency emitting module based on distributed power amplifier chip according to claim 4, is characterized in that, described final amplifier is made up of distributed power amplifier chip.
6. the radiofrequency emitting module based on distributed power amplifier chip according to claim 3, is characterized in that, described second promotes level amplifier is made up of distributed power amplifier chip.
7. the radiofrequency emitting module based on distributed power amplifier chip according to claim 2, is characterized in that, described first promotes level amplifier is made up of distributed power amplifier chip.
8. the radiofrequency emitting module based on distributed power amplifier chip according to claim 2, is characterized in that, described digital phase shifter is six bit digital phase shifters.
9. the radiofrequency emitting module based on distributed power amplifier chip according to claim 2, is characterized in that, the service band of described radiofrequency emitting module is K-band or Ka wave band.
10. the radiofrequency emitting module based on distributed power amplifier chip according to any one of claim 2-9, it is characterized in that, described ripple control microwave daughter board comprises detecting unit, computing unit, drive circuit and interface circuit, and described interface circuit is connected respectively to host computer, described detecting unit and described computing unit; Described detecting unit is connected to described digital phase shifter, described digital pad and described computing unit respectively; Described computing unit connects described drive circuit.
11. based on the radio-frequency transmissions assembly of distributed power amplifier chip, and it is characterized in that, comprise two radiofrequency emitting modules as claimed in claim 10, the radiofrequency emitting module described in two fits together face-to-face each other mirror image.
The 12. radio-frequency transmissions assemblies based on distributed power amplifier chip according to claim 11, is characterized in that, be provided with thermal hole between two described radiofrequency emitting modules.
The 13. radio-frequency transmissions assemblies based on distributed power amplifier chip according to claim 12, is characterized in that, be provided with heat conductive rod in described thermal hole.
14. phased array antenna, is characterized in that, described phased array antenna comprises the radio-frequency transmissions assembly of n group as described in any one of claim 11-13, and n is the integral multiple of 8 or 8;
Each described radio-frequency transmissions assembly is fixed in a shell side by side, to form described phased array antenna.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201521113735.1U CN205232208U (en) | 2015-12-28 | 2015-12-28 | Radiofrequency emitting module , subassembly and phased array antenna based on super broad band power amplifier chip |
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| CN201521113735.1U CN205232208U (en) | 2015-12-28 | 2015-12-28 | Radiofrequency emitting module , subassembly and phased array antenna based on super broad band power amplifier chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107395225A (en) * | 2017-07-18 | 2017-11-24 | 成都天锐星通科技有限公司 | A kind of signal processing circuit |
| CN112994734A (en) * | 2021-02-10 | 2021-06-18 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | K-band radio frequency front-end four-channel antenna interface unit board |
-
2015
- 2015-12-28 CN CN201521113735.1U patent/CN205232208U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107395225A (en) * | 2017-07-18 | 2017-11-24 | 成都天锐星通科技有限公司 | A kind of signal processing circuit |
| CN107395225B (en) * | 2017-07-18 | 2019-05-21 | 成都天锐星通科技有限公司 | A kind of signal processing circuit |
| CN112994734A (en) * | 2021-02-10 | 2021-06-18 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | K-band radio frequency front-end four-channel antenna interface unit board |
| CN112994734B (en) * | 2021-02-10 | 2022-04-12 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | K-band radio frequency front-end four-channel antenna interface unit board |
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Address after: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Patentee after: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. Patentee after: CHINA COMMUNICATION TECHNOLOGY Co.,Ltd. Address before: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Patentee before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. Patentee before: CHINA COMMUNICATION TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20190926 Address after: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Co-patentee after: SHENZHEN HUAXUNXING COMMUNICATION Co.,Ltd. Patentee after: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. Address before: 518102 Guangdong Province, Baoan District Xixiang street Shenzhen City Tian Yi Lu Chen Tian Bao Industrial District 37 Building 2 floor East Co-patentee before: CHINA COMMUNICATION TECHNOLOGY Co.,Ltd. Patentee before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220621 Address after: 518102 room 404, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province Patentee after: Shenzhen Huaxun ark Photoelectric Technology Co.,Ltd. Address before: 518102 East, 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. Patentee before: SHENZHEN HUAXUNXING COMMUNICATION Co.,Ltd. |
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Effective date of registration: 20220815 Address after: 266000 room 610, building 1, No. 333 YINGSHANHONG Road, Binhai street, Huangdao District, Qingdao, Shandong Province Patentee after: Qingdao Junrong Huaxun Terahertz Technology Co.,Ltd. Address before: 518102 room 404, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province Patentee before: Shenzhen Huaxun ark Photoelectric Technology Co.,Ltd. |
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