CN205177850U - Germanium base MOS device - Google Patents
Germanium base MOS device Download PDFInfo
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- CN205177850U CN205177850U CN201520779331.XU CN201520779331U CN205177850U CN 205177850 U CN205177850 U CN 205177850U CN 201520779331 U CN201520779331 U CN 201520779331U CN 205177850 U CN205177850 U CN 205177850U
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- germanium
- mos device
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- passivation
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Abstract
The utility model provides a surface passivation method of the germanium base MOS device substrate of the high k value material of ALD deposit and the germanium base MOS device who obtains, this germanium base MOS device, its structure in proper order by: the germanium substrate layer, the passivation layer, high k value gate dielectric layer and metal electrode constitute, the passivation layer is the ge -R key on germanium substrate layer surface, high k value gate medium be selected from among al2O3, ti2O3, hfO2, zrO2, the la2O3 arbitrary kind or adulterate each other more than two kinds. The utility model discloses a germanium base MOS device is the hydroxyl and to germanium surface of the substrate's passivation, reduces the interfacial state density between germanium substrate and the gate medium effectively, has obviously improved the passivation effect.
Description
Technical field
The utility model relates to field of semiconductor devices, and specifically, the utility model relates to surface passivation method and the germanium base MOS device that a kind of ALD deposits the germanium base MOS device substrate of high-k material.
Background technology
Because the native oxide quality of silicon is very high, can manufacture metal-oxide semiconductor fieldeffect transistor easily, therefore, silicon is semi-conducting material important in modern electronics industry always.Through the continuous miniaturization of more than 40 years, after the characteristic size of semiconductor device enters into 45nm technology node, based on silicon materials MOSFET just close to its basic physics limit.If continuation minification, tunnelling and huge electric leakage will bring tremendous influence to transistor.In order to reduce gate tunneling current, reduce the power consumption of device, eliminate the integrity problem that in poly-Si depletion effect and p-type metal-oxide semiconductor fieldeffect transistor (PMOSFET), boron penetration causes, alleviate fermi level pinning effect, high-k (k) material, such as HfO
2, replace traditional SiO
2structure becomes inevitable trend.Compare with traditional silicon dioxide gate dielectric, high-k (k) material can relax k/3.9 doubly to the restriction of dielectric physical thickness, and does not affect the electrical properties of device.Research on a silicon substrate has made great progress, and high-K gate dielectric material and metal gate have been applied in the middle of the CPU manufacturing technology of its 45nm node by Intel Company, achieves excellent performance.
But according to international technology roadmap for semiconductors, CMOS technology will enter 16nm technology node in 2015-2020.(and the method such as other enhanced strain engineerings will become the key technical problem of 16nm node for the elongation technology of immersion lithography, Enhanced mobility substrate technology, for ultra-shallow junctions.Because substrate transfer rate has a significant impact device performance, Enhanced mobility substrate technology obtains to be paid close attention to more and more widely.Germanium is because of its high carrier mobility, and compatible with semiconductor technology, is considered to the high mobility semiconductor material of most potentiality.The electron mobility of germanium and hole mobility are approximately 2 and 4 times of silicon respectively, and mobility can also be further enhanced by enhanced strain technology, are the desirable channel material of cmos device.
Utility model content
First aspect problem to be solved in the utility model is the performance in order to improve germanium base MOS device, provides the surface passivation method of the germanium base MOS device substrate of a kind of ALD method deposition high-k material.The method can not affect under the prerequisite improving oxide layer dielectric constant, effectively prevent the oxidation of germanium substrate in deposition process, reduce the interface state density of germanium substrate and gate medium interface, improve the interface quality of substrate and gate medium, improve the performance of germanium base MOS device.
For solving the problems of the technologies described above, a kind of ALD that the utility model provides deposits the surface passivation method of the germanium base MOS device substrate of high-k material, and it comprises the steps:
(1) germanium substrate is cleaned;
(2) with HF solution-treated germanium substrate, remove the natural oxidizing layer of germanium substrate and form Ge-H key at substrate surface;
(3) with the saturated PCl of chlorobenzene
5solution-treated, is transformed into Ge-Cl key by the Ge-H key on surface;
(4) use alkyl halide magnesium (R-Mg-X) solution-treated of oxolane again, wherein R is chain hydrocarbon, and X is halogen, and Ge-Cl key is transformed into Ge-R, makes surface obtain passivation;
(5) by the ALD technical face deposition high-k gate dielectric material of the germanium substrate after passivation;
(6) deposit metal electrodes.
In described step (1), with the organic substance of organic solvent ultrasonic cleaning 2-10 minute removing germanium substrate surface.Organic solvent comprises but is not limited to acetone, ethanol, isopropyl alcohol etc.
In described step (2), with 2%HF solution-treated germanium substrate 30-120 second.
In described step (2), after HF solution immersion treatment germanium substrate, cleaner with deionized water rinsing, N
2dry up, make surface form Ge-H key.。
In described step (3), germanium substrate is placed in the saturated PCl of chlorobenzene
5solution 0.5-3 hour, solution temperature remains on 80-95 DEG C, and the Ge-H key of germanium substrate surface is transformed into Ge-Cl key, rinses for several times after taking-up with chlorobenzene and oxolane.
In described step (4), germanium substrate is immersed in alkyl halide magnesium (R-Mg-X) solution of oxolane, wherein R is chain hydrocarbon, and X is halogen, and solution concentration is 1mol/L, temperature remains on 70 DEG C, the Ge-Cl key of germanium substrate surface, at 8-24 hour, is transformed into Ge-R by the time, makes substrate surface form Ge-R key, thus play the effect of passivation, with oxolane and washed with methanol several after taking-up.
In an optimal technical scheme of the present utility model, R base is selected from saturated aliphatic hydrocarbon and unsaturated acyclic hydrocarbon, is preferably saturated aliphatic hydrocarbon; More preferably R base is C
nh
2n+1, wherein n=1,2,3,4,5,6,7,8,9,10,11,12; More preferably R base is C
nh
2n+1, wherein n=1,2,3,4.
In described step (5), described high-K gate medium, is selected from Al
2o
3, Ti
2o
3, HfO
2, ZrO
2, La
2o
3in a kind of or two or more doping mutually.
In described step (6), by mask plate at surface deposition metal electrode.
In the utility model optimal technical scheme, adopt the single-crystal germanium substrate in N-type <100> crystal orientation.
Second aspect of the present utility model, the germanium base MOS device that provides a kind of said method to prepare, its structure is successively by germanium substrate layer, and passivation layer, high-k gate dielectric layer and metal electrode are formed.
In the utility model optimal technical scheme, described passivation layer is the Ge-R key on germanium substrate layer surface.Wherein, R base is selected from saturated aliphatic hydrocarbon and unsaturated acyclic hydrocarbon, is preferably saturated aliphatic hydrocarbon; More preferably R base is C
nh
2n+1, wherein n=1,2,3,4,5,6,7,8,9,10,11,12; More preferably R base is C
nh
2n+1, wherein n=1,2,3,4.
Described high-K gate medium is selected from Al
2o
3, Ti
2o
3, HfO
2, ZrO
2, La
2o
3in any one or two or more mutual doping.
Compared to solution of the prior art, the beneficial effects of the utility model are:
With insert the prior art passivating method of one deck passivation layer between high-k material and substrate compared with, the germanium base MOS device that preparation method of the present utility model obtains can not form the lower oxide skin(coating) of one deck dielectric constant at substrate surface, avoid dielectric absorption, with the dielectric constant significantly improving oxide layer medium, thus equivalent oxide thickness can be reduced.With come compared with passivation substrate shows with halogen, Ge-C key (Ge-CH
3between link key) bond energy (460kJ/mol) larger than the bond energy of Ge-halogen (bond energy of Ge-Cl key is 356kJ/mol, Ge-Br be 276kJ/mol, Ge-I be 213kJ/mol).In the utility model, hydroxyl carries out passivation effect to interface is better than the effect of halogen.
This method utilizes hydroxyl to the passivation of germanium substrate surface, effectively reduces the interface state density between germanium substrate and gate medium, significantly improves passivation effect.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the utility model is further described:
Fig. 1 is the flow chart of the germanium base MOS device substrate surface passivation method of the ALD method deposition high-k material of the utility model one embodiment;
Fig. 2 is the schematic diagram of the germanium base MOS device passivation flow process of the utility model ALD method deposition high-k material.
Wherein, 1: germanium substrate; 2:Ge-H key; 3:Ge-Cl key; 4:Ge-R key; 5: high-k medium; 6: metal electrode.
Embodiment
For the ease of understanding, below will be described in detail the utility model by specific embodiment.It is important to note that these descriptions are only exemplary descriptions, do not form the restriction to the utility model scope.According to the discussion of this specification, many changes of the present utility model, to change concerning one of ordinary skill in the art be all apparent.
By reference to the accompanying drawings, by embodiment, the utility model is specifically described further:
Step 1. selects the single-crystal germanium substrate 1 in N-shaped <100> crystal orientation to clean: first use soaked in absolute ethyl alcohol five minutes to germanium substrate 1, ultrasonic cleaning ten minutes in acetone, use soaked in absolute ethyl alcohol again five minutes, then clean with deionized water rinsing, to remove the organic pollution on substrate, but be not limited to this cleaning method, as shown in Figure 2 a;
The method removing surface oxide layer that step 2. is soaked with HF solution also forms Ge-H key 2 on surface: detailed process is as follows: first soak 60 seconds with the HF solution of dilute 2%, with deionized water rinsing 1 minute, dries up with nitrogen.This process can be removed the natural oxidizing layer on germanium substrate 1 surface and form Ge-H key 2 on surface, as shown in Figure 2 b;
Germanium substrate 1 is placed in the saturated PCl of chlorobenzene by step 3.
5solution one hour, solution temperature remains on 90 DEG C, and the Ge-H key 2 of germanium substrate surface 1 can be transformed into Ge-Cl key 3 by this process, as shown in Figure 2 c, rinses for several times after taking-up with chlorobenzene and oxolane;
Germanium substrate 1 is immersed in alkyl halide magnesium (R-Mg-X) solution of oxolane by step 4., wherein R is chain hydrocarbon, X is halogen, the alkyl halide magnesium that this embodiment adopts is methyl-magnesium-chloride, solution concentration is 1mol/L, and temperature remains on 70 DEG C, and the time is 20 hours, Ge-Cl key 3 can be transformed into Ge-R4 by this process, is Ge-CH in the present embodiment
3, make substrate surface form Ge-CH
3key, thus the effect playing passivation, as shown in Figure 2 d, with oxolane and washed with methanol several after taking-up.
Step 5. deposits high-k material, as being ZrO
2.By with the method for the ALD germanium deposited on substrates ZrO in passivation
25, thickness is 15nm, as shown in Figure 2 e;
Step 6. deposit metal electrodes, this enforcement preference adopts electron beam evaporation, by mask plate, deposited the gold that thickness is 300nm, as metal electrode 6, the germanium base MOS device obtained as shown in figure 2f.
Embodiment 2
Basic step is with embodiment 1, but the high-k material adopted in step (5) is Al
2o
3.
Embodiment 3
Basic step is with embodiment 2, but in step (4), alkyl halide magnesium (R-Mg-X) is ethylmagnesium chloride, and in step (5), the high-k material of employing is HfO
2.
Embodiment 4
Basic step is with embodiment 3, but in step (5), the high-k material of employing is Al
2o
3doping La
2o
3.
More than show and describe general principle of the present utility model, principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not by the restriction of above-mentioned example; what describe in above-mentioned example and specification just illustrates principle of the present utility model; under the prerequisite not departing from the utility model spirit and scope, the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (4)
1. a germanium base MOS device, is characterized in that, its structure is successively by germanium substrate layer, and passivation layer, high-k gate dielectric layer and metal electrode are formed.
2. germanium base MOS device according to claim 1, is characterized in that, described passivation layer is the Ge-R key on germanium substrate layer surface.
3. germanium base MOS device according to claim 1, is characterized in that, described high-K gate medium is selected from Al
2o
3, Ti
2o
3, HfO
2, ZrO
2, La
2o
3in the mutual doping of any one or two kinds.
4. germanium base MOS device according to claim 1, is characterized in that, germanium substrate layer is the single-crystal germanium substrate in N-type <100> crystal orientation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520779331.XU CN205177850U (en) | 2015-10-09 | 2015-10-09 | Germanium base MOS device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520779331.XU CN205177850U (en) | 2015-10-09 | 2015-10-09 | Germanium base MOS device |
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| Publication Number | Publication Date |
|---|---|
| CN205177850U true CN205177850U (en) | 2016-04-20 |
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ID=55741798
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116666236A (en) * | 2023-08-02 | 2023-08-29 | 深圳市鲁光电子科技有限公司 | Surface passivation method of semiconductor material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116666236A (en) * | 2023-08-02 | 2023-08-29 | 深圳市鲁光电子科技有限公司 | Surface passivation method of semiconductor material |
| CN116666236B (en) * | 2023-08-02 | 2023-11-21 | 深圳市鲁光电子科技有限公司 | Surface passivation method of semiconductor material |
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