CN102403367A - High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof - Google Patents
High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof Download PDFInfo
- Publication number
- CN102403367A CN102403367A CN2011103973856A CN201110397385A CN102403367A CN 102403367 A CN102403367 A CN 102403367A CN 2011103973856 A CN2011103973856 A CN 2011103973856A CN 201110397385 A CN201110397385 A CN 201110397385A CN 102403367 A CN102403367 A CN 102403367A
- Authority
- CN
- China
- Prior art keywords
- substrate
- mobility
- trimethyl aluminium
- ethanol
- high mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention belongs to the technical field of a semiconductor and particularly relates to a high-mobility MOS (Metal Oxide Semiconductor) capacitor and a manufacturing method thereof. The MOS capacitor structure is in sequence provided with a mobility substrate, a trimethyl aluminum purification layer, an HfO2 grid medium layer and an electrode. The manufacturing method for the high-mobility MOS capacitor comprises the following steps of: washing the high-mobility substrate; forming the trimethyl aluminum purification layer on the surface of the substrate; depositing the HfO2 grid medium by ALD; and making the electrode. The trimethyl aluminum purification layer can reduce residual oxide content on the surface of the substrate to reduce interfacial state density with the grid medium material so as to improve interface properties. The deposited HfO2 medium layer has accurate controllability of film thickness, excellent conformality, good interface control capability and wonderful large area uniformity, so that electric properties of the MOS capacitor are greatly improved, thereby improving the performance of the MOS transistor.
Description
Technical field
The invention belongs to technical field of semiconductors, be specifically related to a kind of high mobility mos capacitance and preparation method thereof.
Background technology
Since the sixties in 20th century, silicon is most important semi-conducting material in the hyundai electronics industry always, mainly is to be used for surface passivation because it forms very high-quality native oxide.Through the lasting scaled down development in more than 40 years, classical body silicon MOSFET just dwindled near its physics limit, and this just needs the innovation of new material and new device architecture.
High-k (k) material can relax k/3.9 doubly to the restriction of medium physical thickness; Its research in the si-substrate integrated circuit field has obtained many progress; Intel Company has been applied to high-k gate dielectric material and metal gate in the middle of the CPU manufacturing technology of its 45 nm node, has obtained excellent performance.But it also is faced with some problems, like the mass ratio SiO at oxide and interface
2Far short of what is expected, owing to reasons such as Coulomb scattering, phon scatterings, cause the following degradation of channel mobility.
(electron mobility is about twice to big many of the mobility ratio silicon of semiconductor Germanium (Ge); Hole mobility is about 4 times); Can relax MOSFET drain current saturation problem, and compatible mutually with traditional si-substrate integrated circuit technology, so germanium is considered to very promising raceway groove alternate material.But GeO
2Of low quality, surface passivation is abundant inadequately, thus people hope can be on germanium the direct high k material of deposit and do not form the intermediate layer.
III-V family semi-conducting material; Like GaAs (GaAs), indium gallium arsenic (InGaAs) is that research is the most deep after silicon; Most widely used semi-conducting material, its main feature comprise broad stopband, direct band gap and high electron mobility (than the high 7-20 of silicon doubly), are suitable for making high speed, high frequency and powerful electronic device; Also can make opto-electronic device, like light-emitting diode, visible laser, Infrared Detectors etc.Transistor speed with GaAs material is made is fast, frequency is high, low in energy consumption, radioresistance, application wide.But the interface of GaAs, InGaAs and himself oxide has very high interface state density, thereby causes the pinning of Fermi level and high surface recombination rate, has influenced its further application.
Recently, many high-k gate dielectrics are applied on the high mobility Metal-oxide-semicondutor (MOS), for example aluminium oxide, hafnium oxide, zirconia etc.They reduce the grid leakage current reducing equivalent oxide thickness (EOT), and aspects such as increase hole mobility are very potential.But; The mobility in hole and the mobility of electronics do not reach the set goal; Possibly mainly be because the interface that gate medium and high mobility substrate surface form lacks perfection; Counterdiffusion or interface state density are too high mutually causes for gate medium and substrate atoms, therefore before the deposit high-k gate dielectric, need carry out suitable Passivation Treatment to this surface.
In addition, development also is the focus of microelectronics research with the compatible mutually film preparing technology of modern CMOS technology.Wherein (Atomic Layer Deposition ALD) is a kind of chemical vapor deposition techniques that can carry out dust () the rank control in other words of monoatomic layer rank to film thickness to the atomic layer deposition technology.The ALD technology has obtained remarkable progress so far from the development seventies in last century, and it has write into international semiconductor technology path figure (ITRS), as demonstrating wide application prospect with the compatible candidate technologies of microelectronic technique at microelectronic.
Why the ALD technology receives the industry favor, relevant with technical characterstic with its peculiar growing principle.Though the ALD deposit is a kind of chemical vapor deposition techniques; But with traditional chemical vapor deposition (CVD) compared with techniques; Still the surperficial saturated chemistry that has big difference very, ALD technology to be based on to carry out in order is from the growth course of restriction, and it is passed in the reaction chamber reacting gas ALT pulse formula.An ALD reaction cycle comprises 4 steps: (1) first kind of reacting precursor gets into reaction chamber and chemisorbed at substrate surface with the mode of pulse; (2) treat that surface adsorption is saturated after, with inert gas unnecessary reacting precursor purge is gone out reaction chamber; (3) then second kind of reacting precursor gets into reaction chamber with the mode of pulse, and reacts with last chemisorbed precursor from the teeth outwards; (4) question response goes out reaction chamber with inert gas with unnecessary reacting precursor and accessory substance purge thereof after fully again.Whole ALD growth course is realized by the repeatedly cycle repeats of one-period.The substantive characteristics of all ALD is exactly that surface reaction reaches capacity; Feasible growth stops, so the thickness of film directly is proportional to the completed number of times of surface reaction, i.e. reaction cycle number; Can just can realize accurate control through the reaction cycle number of control deposit like this to film thickness.In addition because it from the surface reaction of limit, can form uniform covering to the very big surface of depth-width ratio.Also can control the content of different material in the film through controlling the number of times ratio of homology pulse cycle not in addition.
Summary of the invention
The object of the present invention is to provide a kind of Novel MOS structure that can improve high mobility mos capacitance performance, and its corresponding manufacture method is provided.
The high mobility mos capacitance that the present invention proposes is by arranging folded high mobility substrate (101), trimethyl aluminium passivation layer (103), HfO successively
2Gate dielectric layer (104) and electrode (105) constitute.Its manufacture method may further comprise the steps:
(1) cleans the high mobility substrate; This substrate can be germanium, GaAs or indium gallium arsenic etc.:
(2) form the trimethyl aluminium passivation layer: cleaned substrate is put into the ALD reaction chamber carry out the trimethyl aluminium passivation, temperature is 150-250
OC
(3) form HfO
2Gate dielectric layer: will carry out the deposit reaction of gate medium through the substrate of transpassivation, reaction chamber temperature is 150-300
oC, the operating pressure of reaction chamber is 2-5 torr; Feed Hf source Hf [N (C in order
2H
5) (CH
3)]
4Circulate to accomplish an ALD with deionized water; The circulation of accomplishing specified quantity is to reach required thickness;
(4) make electrode.
Above-mentioned steps (1) is cleaned high mobility substrate process: if Ge base substrate soaks 5-10 min with substrate earlier in ethanol; And then in acetone ultrasonic cleaning 5-10 min; And then with ethanol ultrasonic cleaning 5-10 min in order to remove impurity such as surface and oil contaminant; Circulate ultrasonic several times concussion and rinsing to remove surperficial natural GeOx with the hydrofluoric acid of 1:50 and deionized water in the back several times with deionized water rinsing, and per step 15-20 s dries up for use with high purity nitrogen at last; If GaAs or InGaAs substrate earlier with substrate crystal with ethanol cotton balls wiping 4-5 time, then at φ H
2SO
4: φ H
3PO
4Proportioning is to boil in the solution of 3:1 to boil 4-8 min to remove the oxide on surface, in highly purified ethanol, boils then and boils 2-3 time, and 8-10 min rinses well with deionized water to remove the organic substance that substrate surface is dissolved in ethanol then at every turn; Dry up for use at last with nitrogen gun.
The process that above-mentioned steps (2) forms the trimethyl aluminium passivation layer is: the high mobility substrate that will clean is put into 150-250
oFeed trimethyl aluminium (TMA) 5-10 min in the ALD reaction chamber of C, carrier gas flux is 300-600 sccm; Or feed the trimethyl aluminium (TMA) and the aquapulse of several cycles in order, and the burst length is respectively 0.1-0.5 s, and the purge time is respectively 0.5-1 s, carrier gas flux 300-400 sccm.The TMA meeting that feeds and the natural oxidizing layer of substrate react, and form one deck Al as thin as a wafer
2O
3Layer, the natural oxidizing layer of elimination unstable properties improves device performance greatly.
The step of a circulation of above-mentioned steps (3) ALD deposition process is: at first feed Hf [N (C
2H
5) (CH
3)]
4Pulse 1-5 s feeds N then
2Pulse 1-5 s feeds H once more
2O pulse 0.3-1.0 s feeds N at last
2Pulse 0.5-2.0 s.
The present invention is at high mobility substrate surface and HfO
2Inserted the passivation layer after one deck trimethyl aluminium is handled between the gate medium; Removed substrate surface and cleaned of the influence of the residual oxygen element in back substrate; Prevented of the mutually counterdiffusion of substrate element with the gate medium element; Reduce defective electric charge and interface state density, improved the electric property of high mobility mos capacitance greatly.
Description of drawings
Fig. 1 is the making flow chart of whole high mobility mos capacitance.
Fig. 2 is the high mobility substrat structure before cleaning.
Fig. 3 is the high mobility substrat structure after cleaning.
Fig. 4 is the structure after process trimethyl aluminium passivation on the substrate.
Fig. 5 is deposit HfO on the substrate after the Passivation Treatment
2Structure behind the gate medium.
Fig. 6 is the structure behind depositing metal electrode on the gate medium.
Embodiment
Making flow chart and embodiment below in conjunction with whole high mobility mos capacitance are done further detailed explanation to the present invention.In the drawings, the thickness in layer and zone is amplified or has dwindled in explanation for ease, shown in size do not represent actual size.Although the actual size that reflects device that these figure can not entirely accurate, their zones that still has been complete reflection and form the correlation between the structure.
1) if substrate is the basic substrate of germanium (Ge), its step is following:
Step 1: choose commercial monocrystalline Ge sheet, n type Sb mixes, and crystal orientation (100), resistivity 0.21-0.26 Ω cm is as substrate, i.e. 101 layers among Fig. 2, but have the GeO of one deck autoxidation without the Ge substrate surface that cleans
x, i.e. 102 layers among Fig. 2;
Step 2: substrate is put into ethanol soak 10 min;
Step 3: substrate is put into acetone ultrasonic cleaning 10 min;
Step 4: substrate is put into ethanol ultrasonic cleaning 10 min;
Step 5: several times with deionized water rinsing;
Step 6: ultrasonic concussion 15 s of hydrofluoric acid solution that substrate put into 1:50;
Step 7: substrate is taken out with rinsed with deionized water 15 s;
Step 8: repeating step 6 and 7 is several times to remove nature GeO
xLayer;
Step 9: use N
2Substrate is dried up, promptly get high mobility substrate shown in Figure 3, the residual oxygen element seldom of meeting is gone up on its surface, shown in 102 ';
Step 10: substrate is put into the ALD reaction chamber, and temperature is 200
oC feeds TMA 5-10min, or feeds the trimethyl aluminium (TMA) and the aquapulse of several cycles in order; Burst length is respectively 0.1-0.5 s; The purge time is respectively 0.5-1 s, forms the thin aluminium oxide passivation layer of one deck, is the aluminium oxide passivation layer among Fig. 4 shown in 103;
Step 11: after the passivation, promptly begin ALD growth HfO
2Dielectric layer feeds Hf source and deionized water in order, meets the requirements of period to obtain the gate dielectric membrane of required thickness, and when wherein growing, reaction chamber pressure is 2-5 torr, and the time of a cycle period feeding gas is respectively Hf [N (C
2H
5) (CH
3)]
4: N
2: H
2O:N
2=1.0 s:3.0 s:0.3 s:1.0 s form structure as shown in Figure 5, and 104 layers is the HfO of ALD deposit
2
Step 12: take out the Ge sheet in the reaction chamber, deposition of electrode.Multiple materials such as electrode material can aluminium, gold, platinum, titanium nitride, manufacture method can adopt kinds of processes such as evaporation, sputter, forms structure shown in Figure 6, the electrode that 105 representatives form.
2) if substrate is GaAs or InGaAs semiconductor, its step is following:
Step 1: choose GaAs or InGaAs sheet as substrate, i.e. 101 layers among Fig. 2, but have one deck natural oxidizing layer, i.e. 102 layers among Fig. 2 without the substrate surface that cleans;
Step 2: substrate crystal is with ethanol cotton balls wiping 4-5 time;
Step 3: at φ H
2SO
4: φ H
3PO
4Proportioning is to boil in the solution of 3:1 to boil 4-8 min to remove the oxide on surface;
Step 4: in highly purified ethanol, boil and boil 3 times, each 8 min are to remove the organic substance that substrate surface is dissolved in ethanol;
Step 5: rinse well with deionized water;
Step 6: dry up for usely with nitrogen gun, form structure as shown in Figure 3, the oxygen element on 102 ' layer of residual surface of expression;
Step 7: substrate is put into the ALD reaction chamber, and temperature is 200
oC feeds TMA 5-10min, or feeds the trimethyl aluminium (TMA) and the aquapulse of several cycles in order; Burst length is respectively 0.1-0.5 s; The purge time is respectively 0.5-1 s, forms the thin aluminium oxide passivation layer of one deck, is the aluminium oxide passivation layer among Fig. 4 shown in 103;
Step 8: after the passivation, promptly begin ALD growth HfO
2Dielectric layer feeds Hf source and deionized water in order, meets the requirements of period to obtain the gate dielectric membrane of required thickness, and when wherein growing, reaction chamber pressure is 2-5 torr, and the time of a cycle period feeding gas is respectively Hf [N (C
2H
5) (CH
3)]
4: N
2: H
2O:N
2=1.0 s:3.0 s:0.3 s:1.0 s form structure as shown in Figure 5, and 104 layers is the HfO of ALD deposit
2
Step 9: take out the sample in the reaction chamber, deposition of electrode.Multiple materials such as electrode material can aluminium, gold, platinum, titanium nitride, manufacture method can adopt kinds of processes such as evaporation, sputter, forms structure shown in Figure 6, the electrode that 105 representatives form.
Claims (5)
1. a high mobility mos capacitance is characterized in that by arranging folded high mobility substrate (101), trimethyl aluminium passivation layer (103), HfO successively
2Gate dielectric layer (104) and electrode (105) constitute.
2. the manufacture method of a high mobility mos capacitance is characterized in that may further comprise the steps:
(1) cleans the high mobility substrate;
(2) form the trimethyl aluminium passivation layer: cleaned substrate is put into the ALD reaction chamber carry out the trimethyl aluminium passivation, temperature is 150-250
oC;
(3) form HfO
2Gate dielectric layer: will carry out the deposit reaction of gate medium through the substrate of transpassivation, reaction chamber temperature is 150-300
oC, the operating pressure of reaction chamber is 2-5 torr; Feed Hf source Hf [N (C in order
2H
5) (CH
3)]
4Circulate to accomplish an ALD with deionized water; The circulation of accomplishing specified quantity is to reach required thickness;
(4) make electrode.
3. according to claim 2 manufacture method, it is characterized in that the step of the said cleaning of step (1) is:
If said substrate is a Ge base substrate, earlier substrate is soaked 5-10 min in ethanol, ultrasonic cleaning 5-10 min in acetone again, and then with ethanol ultrasonic cleaning 5-10 min, with the removal surface impurity; With deionized water rinsing several times; Then with the hydrofluoric acid of 1:50 and the deionized water ultrasonic several times concussion of circulation and rinsing to remove surperficial natural GeO
x, be 15-20 s each circulation timei; Dry up for use with high purity nitrogen at last;
If said substrate is GaAs or InGaAs substrate, earlier with substrate crystal with ethanol cotton balls wiping 4-5 time, then at φ
H2SO4: φ
H3PO4Proportioning is to boil in the solution of 3:1 to boil 4-8 min, to remove the oxide on surface; In highly purified ethanol, boil then and boil 2-3 time, each 8--10 min to remove the organic substance that substrate surface is dissolved in ethanol, rinses well with deionized water then; Dry up for use at last with nitrogen gun.
4. manufacture method according to claim 2, it is characterized in that step (2) forms trimethyl aluminium passivation layer step and is: the high mobility substrate that will clean is put into 150-250
oIn the ALD reaction chamber of C, feed trimethyl aluminium 5-10 min, carrier gas flux is 300-600 sccm; Or feed trimethyl aluminium and water in order, and the burst length is respectively 0.1-0.5 s, and the purge time is respectively 0.5-1 s, carrier gas flux 300-400 sccm.
5. manufacture method according to claim 2, the step of its characteristic each circulation in step (3) is: at first feed Hf [N (C
2H
5) (CH
3)]
4Pulse 1-5 s feeds N then
2Pulse 1-5 s feeds H once more
2O pulse 0.3-1.0 s feeds N at last
2Pulse 0.5-2.0 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103973856A CN102403367A (en) | 2011-12-05 | 2011-12-05 | High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103973856A CN102403367A (en) | 2011-12-05 | 2011-12-05 | High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102403367A true CN102403367A (en) | 2012-04-04 |
Family
ID=45885382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103973856A Pending CN102403367A (en) | 2011-12-05 | 2011-12-05 | High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102403367A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601587A (en) * | 2016-11-29 | 2017-04-26 | 东莞市广信知识产权服务有限公司 | Ge base MOS device structure |
| US9972695B2 (en) | 2016-08-04 | 2018-05-15 | International Business Machines Corporation | Binary metal oxide based interlayer for high mobility channels |
| CN108369894A (en) * | 2015-12-04 | 2018-08-03 | 应用材料公司 | Method and solution for cleaning INGAAS (or iii-v) substrate |
| CN109637924A (en) * | 2018-12-17 | 2019-04-16 | 深圳大学 | Layer structural composite material and preparation method thereof |
| CN110042365A (en) * | 2019-03-04 | 2019-07-23 | 中国科学院物理研究所 | A kind of Atomic layer deposition method in two-dimensional material surface growth aluminium oxide |
| CN111081876A (en) * | 2019-12-30 | 2020-04-28 | 华南理工大学 | Organic thin film transistor with high-dielectric and wide-band-gap metal oxide as insulating layer and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101388397A (en) * | 2008-10-23 | 2009-03-18 | 复旦大学 | Low-voltage erasable nano-crystal storage capacitor construction and preparation thereof |
| CN101661882A (en) * | 2008-08-27 | 2010-03-03 | 台湾积体电路制造股份有限公司 | Semiconductor element and its manufacturing method |
| CN101838812A (en) * | 2010-01-07 | 2010-09-22 | 南京大学 | Method for cleaning surface of passivated Ge substrate |
| CN102005390A (en) * | 2010-10-19 | 2011-04-06 | 复旦大学 | Surface passivation method for Ge |
-
2011
- 2011-12-05 CN CN2011103973856A patent/CN102403367A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661882A (en) * | 2008-08-27 | 2010-03-03 | 台湾积体电路制造股份有限公司 | Semiconductor element and its manufacturing method |
| CN101388397A (en) * | 2008-10-23 | 2009-03-18 | 复旦大学 | Low-voltage erasable nano-crystal storage capacitor construction and preparation thereof |
| CN101838812A (en) * | 2010-01-07 | 2010-09-22 | 南京大学 | Method for cleaning surface of passivated Ge substrate |
| CN102005390A (en) * | 2010-10-19 | 2011-04-06 | 复旦大学 | Surface passivation method for Ge |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108369894A (en) * | 2015-12-04 | 2018-08-03 | 应用材料公司 | Method and solution for cleaning INGAAS (or iii-v) substrate |
| CN108369894B (en) * | 2015-12-04 | 2019-10-15 | 应用材料公司 | For cleaning the method and solution of INGAAS (or iii-v) substrate |
| US9972695B2 (en) | 2016-08-04 | 2018-05-15 | International Business Machines Corporation | Binary metal oxide based interlayer for high mobility channels |
| US10217835B2 (en) | 2016-08-04 | 2019-02-26 | International Business Machines Corporation | Binary metal oxide based interlayer for high mobility channels |
| US10217834B2 (en) | 2016-08-04 | 2019-02-26 | International Business Machines Corporation | Binary metal oxide based interlayer for high mobility channels |
| US10283610B2 (en) | 2016-08-04 | 2019-05-07 | International Business Machines Corporation | Binary metal oxide based interlayer for high mobility channels |
| CN106601587A (en) * | 2016-11-29 | 2017-04-26 | 东莞市广信知识产权服务有限公司 | Ge base MOS device structure |
| CN109637924A (en) * | 2018-12-17 | 2019-04-16 | 深圳大学 | Layer structural composite material and preparation method thereof |
| CN110042365A (en) * | 2019-03-04 | 2019-07-23 | 中国科学院物理研究所 | A kind of Atomic layer deposition method in two-dimensional material surface growth aluminium oxide |
| CN111081876A (en) * | 2019-12-30 | 2020-04-28 | 华南理工大学 | Organic thin film transistor with high-dielectric and wide-band-gap metal oxide as insulating layer and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chui et al. | Atomic layer deposition of high-/spl kappa/dielectric for germanium MOS applications-substrate | |
| Eller et al. | Electronic surface and dielectric interface states on GaN and AlGaN | |
| KR100675719B1 (en) | Semiconductor device and method for manufacturing the same | |
| TWI397124B (en) | Method of fabricating semiconductor device | |
| US7696517B2 (en) | NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric | |
| US9281373B2 (en) | Semiconductor device having tungsten gate electrode and method for fabricating the same | |
| CN102403367A (en) | High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof | |
| JP5203133B2 (en) | Manufacturing method of semiconductor device | |
| US20060115937A1 (en) | Devices for an insulated dielectric interface between high-k material and silicon | |
| CN102332395A (en) | Method for selectively depositing gate oxides and gate electrodes | |
| US8455372B2 (en) | Method for cleaning and passivating gallium arsenide surface autologous oxide and depositing AL203 dielectric | |
| CN1956147A (en) | Ge-based semiconductor structure and manufacturing method thereof | |
| CN103367408B (en) | Based on the gate dielectric material and preparation method thereof of silicon substrate high-k | |
| US9831084B2 (en) | Hydroxyl group termination for nucleation of a dielectric metallic oxide | |
| CN101838812B (en) | Method for cleaning surface of passivated Ge substrate | |
| US20160056033A1 (en) | Low temperature atomic layer deposition of oxides on compound semiconductors | |
| CN102543751A (en) | Preparation method of Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness | |
| US20050236675A1 (en) | Semiconductor device and manufacturing method thereof | |
| US9029224B2 (en) | High-K layers, transistors, and fabrication method | |
| CN102509734A (en) | Method for preparing Ge-based MOS (metal-oxide semiconductor) capacitor by using ALD (atomic layer deposition) | |
| US8633119B2 (en) | Methods for manufacturing high dielectric constant films | |
| CN101962758B (en) | Method for forming Hf-based gate medium film on germanium substrate by atomic layer deposition at low temperature | |
| US20050181619A1 (en) | Method for forming metal oxide layer by nitric acid oxidation | |
| CN102024707A (en) | Method for manufacturing GaAs-based metal oxide semiconductor (MOS) device | |
| CN115621128A (en) | Manufacturing method of high-thermal-conductivity two-dimensional semiconductor field effect transistor and transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120404 |