CN102543751A - Preparation method of Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness - Google Patents

Preparation method of Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness Download PDF

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CN102543751A
CN102543751A CN201110400661XA CN201110400661A CN102543751A CN 102543751 A CN102543751 A CN 102543751A CN 201110400661X A CN201110400661X A CN 201110400661XA CN 201110400661 A CN201110400661 A CN 201110400661A CN 102543751 A CN102543751 A CN 102543751A
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李爱东
李学飞
曹燕强
吴迪
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Nanjing University
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Abstract

The invention discloses a preparation method of a Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness, comprising the steps of 1) cleaning a Ge substrate; 2), performing S passivating; 3), depositing an Al2O3 film on the surface of the Ge substrate in situ;4), depositing an HfO2 film; 5), putting the substrate to a quick annealing furnace to anneal to obtain a finished product. The method obtains a thin aluminum oxide film by in-situ atomic layer deposition, improves interface quality of a gate dielectric film and the Ge substrate, notably improves the electric property of the gate dielectric film and obtains Ge-based MOS device with the Equivalent Oxide Thickness (EOT) of less than 1nm and the leakage current density of less than 2mA/cm2.

Description

Equivalent oxide thickness is the Ge base MOS preparation of devices method of Ya Nami
 
Technical field
The present invention relates to a kind of MOS preparation of devices method, specifically is that a kind of technique for atomic layer deposition that utilizes prepares the method for equivalent oxide thickness for the MOS device of Ya Nami on the Ge of S-passivation substrate.
Background technology
Along with size of devices continues to dwindle; Development and existing Metal-oxide-semicondutor FET (Metal-oxide-semiconductor field-effect transistors; MOSFETs) the grid dielectric film technology of preparing of process compatible is a vital task of microelectronic.Technique for atomic layer deposition (Atomic Layer Deposition; ALD) be a kind of chemical vapour deposition technique that can carry out the accurate control of inferior individual layer (sub-monolayer) to thickness; Just receive increasing concern, in the preparation of deep submicron integrated circuit and nanostructure, demonstrating great application prospect.
High kThe introducing of gate medium and metal gate material; When reducing the high power consumption of silica-based MOSFET device, also bring the deterioration at channel material/gate dielectric material interface, owing to reasons such as Coulomb scattering, phon scatterings; Cause the obvious decline of channel mobility; Greatly influenced the raising of CMOS logical device speed, the novel semi-conductor substrate of seeking to have high mobility substitutes Si, becomes another attractive solution of preparation high-performance New-type CMOS device.Compare with the silica-based microelectronic component of tradition, Ge Base Metal-oxide-semiconductor field (MOSFET) is owing to have higher hole and electron mobility, low doping activationary temperature.But restriction germanium lacks the stable germanium oxide that high quality interface is arranged with germanium, common surperficial germanium oxide (GeO exactly in the principal element of integrated circuit the inside large-scale application 2And GeO) or water miscible or volatile; The interface quality that non-constant is arranged produces serious Fermi's pinning effect, and this has greatly hindered the preparation of Ge based transistor; High k material is introduced in the germanium, for the transistorized development of Ge provides a new opportunity.Surface passivation (Surface passivation) becomes an extremely important technology of development high mobility channel material MOS device.Research shows, develops the interface quality that suitable surface passivation technique can greatly improve high k material/high mobility channel material, effectively reduces interface state density, solves the fermi level pinning problem.
The equivalent oxide thickness of high-k gate dielectric film (Equivalent oxide thickness; EOT) at (the Semiconductor Industry Association of SIA; SIA) ITRS (the International Technology Roadmap for Semiconductor that announces; ITRS) in, be an important techniques index.EOT is that high k film replaces the harsh requirement that the traditional silicon dioxide gate medium is proposed less than 1 nm; Therefore on the semiconductor channel material Ge of high mobility; Development has the Ya Nami equivalent oxide thickness and than the Ge of low-leakage current base MOS preparation of devices method, becomes a difficult point of current microelectronics industry research.
Summary of the invention
It is Ya Nami Ge base MOS preparation of devices method that technical problem to be solved by this invention provides a kind of equivalent oxide thickness; This method is through the very thin aluminum oxide film of original position ald; Improved the interface quality between gate dielectric membrane and the Ge substrate; Obviously improved the electric property of gate dielectric membrane, obtained EOT less than 1 nm and leakage current density less than 2 mA/cm 2Ge base MOS device.
Equivalent oxide thickness of the present invention is the Ge base MOS preparation of devices method of Ya Nami, and it may further comprise the steps:
1) the Ge substrate is cleaned;
2) cleaned Ge substrate is carried out the S passivation, afterwards it is moved into the ALD reative cell;
3) at Ge substrate surface in-situ deposition Al 2O 3Film;
4) at Al 2O 3Film surface deposition HfO 2Film;
5) will deposit good Ge substrate at last and put into quick anneal oven and anneal, get product.
Above-mentioned steps 1) cleaning process is: use acetone, methyl alcohol ultrasonic cleaning Ge substrate 3 ~ 10 minutes successively, use the water-soluble vacuole of HBr 3 ~ 7 minutes again.Wherein the weight ratio of the HBr aqueous solution is: HBr/H 2O=1:3.
Above-mentioned steps 2) the Ge substrate carries out the process of S passivation and is: with (NH 4) 2The water-soluble vacuole Ge of S substrate 10 ~ 40 minutes.
Above-mentioned steps 3) in-situ deposition Al 2O 3The process of film is: under 150-300 ℃ temperature, feed source metal TMA pulse 0.1-0.3s earlier, then feed N 24-10s is cleaned in pulse, feeds steam pulse 0.1-0.3s again, feeds N at last 24-10s is cleaned in pulse; According to the Al that will reach 2O 3Film thickness circulation abovementioned steps several times.
Above-mentioned steps 4) deposition HfO 2The process of film is: under 150-300 ℃ temperature, feed source metal TDMAH or TEMAH pulse 0.1-0.3s, then feed N 24-10s is cleaned in pulse, feeds steam pulse 0.1-0.3s again, feeds N at last 24-10s is cleaned in pulse; According to the HfO that will reach 2Film thickness circulation abovementioned steps several times.
Beneficial effect: the present invention is at gate medium HfO 2Before the thin film deposition, on the basis of S passivation further at the very thin Al of reative cell in-situ deposition 2O 3Film has formed stable interface, has prevented the generation of oxide effectively; Improved the interface quality between gate dielectric membrane and the Ge substrate; Reduce the thickness of boundary layer, improved the interface thermal stability, reduced defective electric charge and interface state density; Improved electric property significantly, obtained EOT less than 1 nm and leakage current density less than 10 mA/cm 2Ge base MOS device.The method technology is simple, on Ge base MOSFET preparation of devices, has important application prospects.
Description of drawings
Fig. 1 directly deposits HfO on the Ge substrate 2Film (Fig. 1 a) with deposition 1.2nm thick Al 2O 3And HfO 2S 2p behind the film (Fig. 1 b) and Ge 3d photoelectron spectroscopy figure;
Fig. 2 is 500 oThe HfO of C annealing 2(Fig. 2 a) and HfO for/Ge 2/ Al 2O 3The HETEM photo of/Ge (Fig. 2 b),
Fig. 3 is the HfO after the thick annealing of 4nm 2(Fig. 3 a) and HfO for film 2/ Al 2O 3(Fig. 3 b) film C-VWith J-VCurve;
Fig. 4 is the HfO after the thick annealing of 7nm 2(Fig. 4 a) and HfO for film 2/ Al 2O 3The electricity of (Fig. 4 b) film is led-voltage curve;
Fig. 5 is the 2.8nm HfO behind the Ge substrate annealing 2/ 1.0nm Al 2O 3The C-V curve of film,
Fig. 6 is the 2.8nm HfO behind the Ge substrate annealing 2/ 1.0nm Al 2O 3The J-V curve of film.
Embodiment
Below in conjunction with instantiation the present invention is further specified.
Embodiment 1:
1, the Ge substrate cleans and the S passivation: backing material is commercial monocrystalline germanium wafer, N type, orientation (100), resistivity 0.2-0.3 W cm.Use ultrasonic 5 minutes of acetone, methyl alcohol successively, remove the greasy dirt on Ge surface.Use HBr (HBr/H again 2The O=1:3 weight ratio) water-soluble vacuole is 5 minutes, removes the natural oxidizing layer on surface.Use 20% weight ratio (NH again 4) 2The water-soluble vacuole of S 20 minutes makes the Ge surface form the Ge-S key, further removes the oxide of unnecessary Ge.The germanium surface of handling with deionized water rinsing at last, and put into the ALD reative cell after drying up with high pure nitrogen.
2, atomic layer deposition method prepares HfO 2/ Al 2O 3Storehouse (stacking structure) structural membrane:
Growth temperature: 220 ℃; Reaction source: trimethyl aluminium (Al (CH 3) 3TMA), four or two (methyl ammonia) hafnium (Hf [N (CH 3) 2] 4,TDMAH), oxygen source is water H 2O; The source temperature: trimethyl aluminium and water are room temperature, and TDMAH is 80 ℃; Utilize sputter plated metal Pt as top electrode, electrode area is 1.45 * 10 -4Cm 2
HfO 2/ Al 2O 3Storehouse process: feed source metal TMA pulse 0.1s earlier, then feed N 24s is cleaned in pulse, feeds steam pulse 0.1s again, feeds N at last 24s is cleaned in pulse; So circulation is 10 times, deposits the thick Al of 1.2 nm 2O 3Feed source metal TDMAH pulse 0.1s again, then feed N 24s is cleaned in pulse, feeds steam pulse 0.1s again, feeds N at last 24s is cleaned in pulse; So circulation is 30～70 times, the thick HfO of deposition 3-7 2The film of deposition is put in the quick anneal oven, at N 2Atmosphere is in 500 oC short annealing 60 s.
Experiment effect:
1. The chemical constitution at interface
Fig. 1 directly deposits HfO on the Ge substrate 2Film (Fig. 1 a) with deposition 1.2nm thick Al 2O 3And HfO 2S 2p behind the film (Fig. 1 b) and Ge 3d photoelectron spectroscopy figure.Can see that from Fig. 1 (a) intensity at S2p peak does not change behind the deposit film, this explanation Ge-S key is 220 oC is a stable existence.Can see from Fig. 1 (b), in the substrate surface depositing Al 2O 3Process in do not form the oxide of Ge, and do not have Al 2O 3Layer is deposition HfO directly 2Process in then generated tangible Ge oxide, this proves Al 2O 3The interface quality of/Ge is better than HfO 2/ Ge.
Fig. 2 is 500 oThe HfO of C annealing 2(Fig. 2 a) and HfO for/Ge 2/ Al 2O 3The HETEM photo of/Ge (Fig. 2 b) can find out that from photo two samples all are amorphous states.Two sample HfO 2The physical thickness of film is 7nm (not comprising the GeOx boundary layer).At HfO 2In/Ge the sample, having the boundary layer that about 2.5nm is thick, possibly be GeO xAnd at HfO 2/ Al 2O 3In/Ge the sample, do not have tangible boundary layer to generate, and the interface is very smooth.
2. electric property
Fig. 3 is the HfO after the thick annealing of 4nm 2(Fig. 3 a) and HfO for film 2/ Al 2O 3(Fig. 3 b) film C-VWith J-VCurve; HfO 2/ Al 2O 3The C-V shape of film obviously is better than an other sample, shows high interface quality and few interface and nearly boundary defect.This is because Al 2O 3Suppressed the growth of GeOx boundary layer effectively.Accumulation attitude electric capacity during from 1MHz we calculate HfO 2/ Al 2O 3The EOT of film is 0.94 nm, and the leakage current density under bias voltage 1V is 1.22 mA/cm 2
Fig. 4 is the HfO after the thick annealing of 7nm 2(Fig. 4 a) and HfO for film 2/ Al 2O 3The electricity of (Fig. 4 b) film is led-voltage curve; HfO 2/ Al 2O 3The film interface density of states (2.83 * 10 12Cm -2EV -1) less than HfO 2(8.61 * 10 12Cm -2EV -1), this is all owing to Al 2O 3To the inhibition of boundary layer growth with stop the outdiffusion of Ge.
 
Embodiment 2:
1, the Ge substrate cleans and the S passivation: backing material is commercial monocrystalline germanium wafer, N type, orientation (100), resistivity 0.2-0.3 W cm.Use ultrasonic 3 minutes of acetone, methyl alcohol successively, remove the greasy dirt on Ge surface.Use HBr (HBr/H again 2The O=1:3 weight ratio) water-soluble vacuole is 3 minutes, removes the natural oxidizing layer on surface.Use 20% weight ratio (NH again 4) 2The water-soluble vacuole of S 10 minutes makes the Ge surface form the Ge-S key, further removes the oxide of unnecessary Ge.The germanium surface of handling with deionized water rinsing at last, and put into the ALD reative cell after drying up with high pure nitrogen.
2, atomic layer deposition method prepares HfO 2/ Al 2O 3Storehouse (stacking structure) structural membrane:
Growth temperature: 250 ℃; Reaction source: trimethyl aluminium (Al (CH 3) 3TMA), four (the first and second basic ammonia) hafnium (Hf [N (CH 3) (C 2H 5)] 4,TEMAH), oxygen source is water H 2O; The source temperature: trimethyl aluminium and water are room temperature, and TEMAH is 120 ℃; Utilize sputter plated metal Pt as top electrode, electrode area is 1.45 * 10 -4Cm 2
HfO 2/ Al 2O 3Storehouse process: feed source metal TMA pulse 0.3s earlier, then feed N 210s is cleaned in pulse, feeds steam pulse 0.3s again, feeds N at last 210s is cleaned in pulse; So circulation is 8 times, deposits the thick Al of 1.0 nm 2O 3Feed source metal TEMAH pulse 0.3s again, then feed N 210s is cleaned in pulse, feeds steam pulse 0.3s again, feeds N at last 210s is cleaned in pulse; So circulation is 30 times, deposits the thick HfO of 2.8 nm 2The film of deposition is put in the quick anneal oven, at N 2Atmosphere is in 500 oC short annealing 60 s.
Experiment effect: Fig. 5 is the 2.8nm HfO behind the Ge substrate annealing 2/ 1.0nm Al 2O 3The C-V curve of film, Fig. 6 are its J-V curves.Show frequency dispersion curve and lower leakage current density preferably, the accumulation attitude electric capacity during from 1MHz we calculate HfO 2/ Al 2O 3The EOT of film is 0.75 nm, and the leakage current density under bias voltage 1V is 6.3 mA/cm 2
?
Embodiment 3:
1, the Ge substrate cleans and the S passivation: backing material is commercial monocrystalline germanium wafer, N type, orientation (100), resistivity 0.2-0.3 W cm.Use ultrasonic 10 minutes of acetone, methyl alcohol successively, remove the greasy dirt on Ge surface.Use HBr (HBr/H again 2The O=1:3 weight ratio) water-soluble vacuole is 7 minutes, removes the natural oxidizing layer on surface.Use 20% weight ratio (NH again 4) 2The water-soluble vacuole of S 40 minutes makes the Ge surface form the Ge-S key, further removes the oxide of unnecessary Ge.The germanium surface of handling with deionized water rinsing at last, and put into the ALD reative cell after drying up with high pure nitrogen.
2, atomic layer deposition method prepares HfO 2/ Al 2O 3Storehouse (stacking structure) structural membrane:
Growth temperature: 300 ℃; Reaction source: trimethyl aluminium (Al (CH 3) 3TMA), four (the first and second basic ammonia) hafnium (Hf [N (CH 3) (C 2H 5)] 4,TEMAH), oxygen source is water H 2O; The source temperature: trimethyl aluminium and water are room temperature, and TEMAH is 130 ℃; Utilize sputter plated metal Pt as top electrode, electrode area is 1.45 * 10 -4Cm 2
HfO 2/ Al 2O 3Storehouse process: feed source metal TMA pulse 0.2s earlier, then feed N 26s is cleaned in pulse, feeds steam pulse 0.2s again, feeds N at last 26s is cleaned in pulse; So circulation is 14 times.Feed source metal TEMAH pulse 0.2s again, then feed N 26s is cleaned in pulse, feeds steam pulse 0.2s again, feeds N at last 26s is cleaned in pulse; So circulation is 30 times.The film of deposition is put in the quick anneal oven, at N 2Atmosphere is in 500 oC short annealing 60 s.
Above-mentioned these execution modes only are used to explain the present invention, but do not limit the scope of the invention, and after having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.

Claims (6)

1. the equivalent oxide thickness Ge base MOS preparation of devices method that is Ya Nami is characterized in that may further comprise the steps:
1) the Ge substrate is cleaned;
2) cleaned Ge substrate is carried out the S passivation, afterwards it is moved into the ALD reative cell;
3) at Ge substrate surface in-situ deposition Al 2O 3Film;
4) at Al 2O 3Film surface deposition HfO 2Film;
5) will deposit good Ge substrate at last and put into quick anneal oven and anneal, get product.
2. the Ge base MOS preparation of devices method that equivalent oxide thickness according to claim 1 is Ya Nami; The cleaning process that it is characterized in that step 1) is: use acetone, methyl alcohol ultrasonic cleaning Ge substrate 3 ~ 10 minutes successively, use the water-soluble vacuole of HBr 3 ~ 7 minutes again.
3. the Ge base MOS preparation of devices method that equivalent oxide thickness according to claim 2 is Ya Nami is characterized in that the weight ratio of the HBr aqueous solution is: HBr/H 2O=1:3.
4. being the Ge base MOS preparation of devices method of Ya Nami according to claim 1,2 or 3 described equivalent oxide thicknesses, it is characterized in that step 2) the Ge substrate process of carrying out the S passivation is: with (NH 4) 2The water-soluble vacuole Ge of S substrate 10 ~ 40 minutes.
5. be the Ge base MOS preparation of devices method of Ya Nami according to claim 1,2 or 3 described equivalent oxide thicknesses, it is characterized in that step 3) in-situ deposition Al 2O 3The process of film is: under 150-300 ℃ temperature, feed source metal TMA pulse 0.1-0.3s earlier, then feed N 24-10s is cleaned in pulse, feeds steam pulse 0.1-0.3s again, feeds N at last 24-10s is cleaned in pulse; According to the Al that will reach 2O 3Film thickness circulation abovementioned steps several times.
6. be the Ge base MOS preparation of devices method of Ya Nami according to claim 1,2 or 3 described equivalent oxide thicknesses, it is characterized in that step 4) deposition HfO 2The process of film is: under 150-300 ℃ temperature, feed source metal TDMAH or TEMAH pulse 0.1-0.3s, then feed N 24-10s is cleaned in pulse, feeds steam pulse 0.1-0.3s again, feeds N at last 24-10s is cleaned in pulse; According to the HfO that will reach 2Film thickness circulation abovementioned steps several times.
CN201110400661XA 2011-12-06 2011-12-06 Preparation method of Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness Pending CN102543751A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931068A (en) * 2012-11-23 2013-02-13 中国科学院微电子研究所 Method for preparing germanium-base MOSFET grate medium
CN102938371A (en) * 2012-11-28 2013-02-20 中国科学院微电子研究所 Method for preparing n+/ p-type ultra-shallow junction on p-type Ge substrate
CN103681289A (en) * 2013-12-25 2014-03-26 中国科学院微电子研究所 Method for preparing germanium oxide interface repairing layer by using in-situ ozone oxidation
CN103887228A (en) * 2014-03-04 2014-06-25 深圳信息职业技术学院 Preparation method for contact of metal and N-type germanium and application
CN106601587A (en) * 2016-11-29 2017-04-26 东莞市广信知识产权服务有限公司 Ge base MOS device structure
CN106711021A (en) * 2016-11-29 2017-05-24 东莞市广信知识产权服务有限公司 silicon-germanium-based MOS surface treatment and medium growing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101838812A (en) * 2010-01-07 2010-09-22 南京大学 Method for cleaning surface of passivated Ge substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101838812A (en) * 2010-01-07 2010-09-22 南京大学 Method for cleaning surface of passivated Ge substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
S. SIONCKE ET AL: "《Atomic Layer Deposition of High-K Dielectrics on Sulphur-Passivated Germanium》", 《JOURNAL OF THE ELECTROCHEMICAL SOCIETY》, vol. 158, no. 7, 28 April 2011 (2011-04-28) *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931068A (en) * 2012-11-23 2013-02-13 中国科学院微电子研究所 Method for preparing germanium-base MOSFET grate medium
CN102938371A (en) * 2012-11-28 2013-02-20 中国科学院微电子研究所 Method for preparing n+/ p-type ultra-shallow junction on p-type Ge substrate
CN102938371B (en) * 2012-11-28 2016-01-20 中国科学院微电子研究所 A kind of method preparing n+/p type for ultra-shallow junctions in p-type Ge substrate
CN103681289A (en) * 2013-12-25 2014-03-26 中国科学院微电子研究所 Method for preparing germanium oxide interface repairing layer by using in-situ ozone oxidation
CN103887228A (en) * 2014-03-04 2014-06-25 深圳信息职业技术学院 Preparation method for contact of metal and N-type germanium and application
CN106601587A (en) * 2016-11-29 2017-04-26 东莞市广信知识产权服务有限公司 Ge base MOS device structure
CN106711021A (en) * 2016-11-29 2017-05-24 东莞市广信知识产权服务有限公司 silicon-germanium-based MOS surface treatment and medium growing method

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Application publication date: 20120704