CN102592974B - Preparation method for high-K medium film - Google Patents
Preparation method for high-K medium film Download PDFInfo
- Publication number
- CN102592974B CN102592974B CN201210075127.0A CN201210075127A CN102592974B CN 102592974 B CN102592974 B CN 102592974B CN 201210075127 A CN201210075127 A CN 201210075127A CN 102592974 B CN102592974 B CN 102592974B
- Authority
- CN
- China
- Prior art keywords
- substrate
- soi substrate
- plasma
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002360 preparation method Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 135
- 238000000034 method Methods 0.000 claims abstract description 39
- 238000004140 cleaning Methods 0.000 claims abstract description 22
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 238000009832 plasma treatment Methods 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract 13
- 239000010409 thin film Substances 0.000 claims abstract 9
- 238000011065 in-situ storage Methods 0.000 claims abstract 6
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 abstract 3
- 239000005416 organic matter Substances 0.000 abstract 1
- 230000002000 scavenging effect Effects 0.000 description 22
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本发明提供一种高k介质薄膜的制备方法，在标准的RCA清洗法之前加入H2SO4、H2O2的清洗步骤，可以去除样品表面有机物，提高衬底表面的纯净度。在RCA清洗法之后再次用HF去除表面氧化层，可以有效地降低薄膜界面层厚度。利用等离子体原子层沉积方法，采用原位O2，NH3等离子体处理Si表面的技术，在高K介质薄膜与Si之间生长一层很薄的氮氧化合物钝化层，该钝化层可以抑制界面层的生长。接着使用等离子体生长方式生长高K介质薄膜，并原位对所述高K介质薄膜进行氧等离子体后处理，减少薄膜中的氧空位。本方法有利于减小界面缓冲层的厚度和界面粗糙度、抑制了衬底和薄膜之间的元素扩散、有利于减小等效栅氧厚度。
The invention provides a method for preparing a high-k dielectric thin film, adding H 2 SO 4 and H 2 O 2 cleaning steps before the standard RCA cleaning method, which can remove organic matter on the sample surface and improve the purity of the substrate surface. After the RCA cleaning method, HF is used to remove the surface oxide layer again, which can effectively reduce the thickness of the film interface layer. Using the plasma atomic layer deposition method, using in-situ O 2 , NH 3 plasma treatment technology on the Si surface, a very thin nitrogen oxide passivation layer is grown between the high-K dielectric film and Si, the passivation layer The growth of the interfacial layer can be suppressed. Next, a high-K dielectric film is grown by using a plasma growth method, and an oxygen plasma post-treatment is performed on the high-K dielectric film in situ to reduce oxygen vacancies in the film. The method is beneficial to reduce the thickness and interface roughness of the interface buffer layer, suppresses element diffusion between the substrate and the film, and is beneficial to reduce the thickness of the equivalent gate oxide.
Description
Technical field
The invention belongs to microelectronics and solid electronics technical field, particularly relate to a kind of preparation method of high-K medium film.
Background technology
Along with the development of large-scale integrated circuit technique, observing Moore's Law as the characteristic size of the mos field effect transistor (MOSFET) of si-substrate integrated circuit core devices always and constantly dwindling.But metal-oxide-semiconductor grid medium thickness is more and more less, approach its limit.The gate medium of silicon dioxide, below 10nm thickness time (manufacturing limit of silicon materials is commonly considered as 10 nano-scale linewidths), will occur that tunnel current increases, the problems such as needle pore defect and performance failure reliability variation.In order to address these problems, some integrated circuit research makers have started to explore, and adopt high-k gate dielectric material to replace SiO
2shown good effect, the high k process technique of 45nm of Intel Company is exactly good example, has led people to conduct extensive research high-K gate dielectric material.
In the method for the high-quality High-K dielectric layer of preparation, plasma-enhanced ald (PEALD) is all well and good selection.It is mainly self-limiting growth, can control accurately thickness and the chemical constituent of film, and the film of growth has good uniformity and protect row, and has unique advantage in growth has the structure of high-aspect-ratio.Replace SiO
2become the gate medium of MOSFET device, High-K material must have and SiO
2the character that/Si system is similar, and with current semiconductor fabrication process compatibility.
PEALD method has many advantages, and as accurate THICKNESS CONTROL, impurity content is low, and relatively low technological temperature still has outstanding uniformity on large substrate.PEALD method growing film is by surface reaction and the control of self limiting reaction mechanism, and the growth rate of film is the controlled number of deposition cycles that is formed on mainly, rather than reaction gas flow and temperature.Moreover, PEALD method also has an advantage can carry out exactly plasma treatment film.
But conventional plasma-enhanced technique for atomic layer deposition (PEALD) is not done any other to the substrate of reactive deposition and is processed, and has just cleaned silicon chip surface by simple RCA ablution, is then growing film.Conventionally the film interface layer that the method obtains is very thick, and interface state density is very large, and character is not very excellent.And, due to HfO
2, La
2o
3between contour k oxides and Si substrate, easily form boundary layer, and in film, have a large amount of oxygen rooms, cause equivalent gate oxide thickness cannot be reduced to desired value, the increase of film leakage current, electric property declines.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of high-K medium film, for solving, the boundary layer producing when prior art is prepared high-K medium film is blocked up, in high-K medium film oxygen room too much cause high-K medium film thickness be difficult to up to standard, leakage current increases, degradation problem under electric property.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of high-K medium film, at least comprise the following steps:
1) provide a Si substrate or SOI substrate, and adopt H
2sO
4and H
2o
2mixed solution cleans described Si substrate or SOI substrate;
2) adopt RCA ablution to clean described Si substrate or SOI substrate;
3) adopt HF solution to clean described Si substrate or SOI substrate;
4) adopt O plasma to carry out plasma treatment to described Si substrate or SOI substrate;
5) adopt N and H plasma original position to carry out plasma treatment to described Si substrate or SOI substrate, to form oxynitrides passivation layer at described Si substrate or SOI substrate surface;
6) using plasma enhancement mode atomic layer deposition method deposits high-k gate dielectric films on described oxynitrides passivation layer;
7) adopt O plasma original position to carry out plasma treatment to described high-k gate dielectric films.
In the preparation method's of high-K medium film of the present invention step 1) in, adopting volume ratio is 3～5: 1 H
2sO
4, H
2o
2mixed solution cleans described Si substrate or SOI substrate, and scavenging period is 5～15min.
In the preparation method's of high-K medium film of the present invention step 2) in, first adopting volume ratio is 1: 0.5～2: 4～6 NH
3h
2o, H
2o
2, H
2o mixed solution cleans described Si substrate or SOI substrate, and scavenging period is 5～15min, and then adopting volume ratio is Si substrate or SOI substrate described in 0.5%～1.5% HF aqueous cleaning, and scavenging period is 20～40s; Finally adopting volume ratio is 1: 0.5～2: 5～7 HCl, H
2o
2, H
2o solution cleans described Si substrate or SOI substrate, and scavenging period is 5～15min.
In the preparation method's of high-K medium film of the present invention step 3) in, Si substrate or SOI substrate described in the HF aqueous cleaning that volume ratio is 0.5%～1.5% adopted.
Preferably, be 45～75s to the scavenging period of described Si substrate or SOI substrate.
In the preparation method's of high-K medium film of the present invention step 4) in, described Si substrate or SOI substrate are placed in to ALD reaction chamber and are warming up to 160～200 ℃, then pass into O to described ALD reaction chamber
2and add that RF power processes described Si substrate or SOI substrate to produce O plasma.
In the preparation method's of high-K medium film of the present invention step 5) in, after adopting O plasma treatment and original position pass into NH to described ALD reaction chamber
3, then add that RF power processes described Si substrate or SOI substrate to produce N, H plasma, to form oxynitrides passivation layer on its surface.
In the preparation method's of high-K medium film of the present invention step 7) in, pass into O to described ALD reaction chamber
2, then add that RF power processes described high-k gate dielectric films to produce O plasma original position, to reduce the oxygen room in described high-k gate dielectric films.
As the preparation method's of a high-K medium film of the present invention preferred version, described step 6) in the material of high-k gate dielectric films be Al
2o
3, HfO
2, La
2o
3, Gd
2o
3, ZrO
2or the binary of its combination in any or oxide more than binary.
As mentioned above, the preparation method of high-K medium film of the present invention, has following beneficial effect: before the RCA of standard ablution, add H
2sO
4, H
2o
2cleaning step, can remove sample surfaces organic substance, improve the degree of purity of substrate surface.After RCA ablution, again remove surface oxide layer with HF, can effectively reduce film interface layer thickness.Utilize plasma Atomic layer deposition method, adopt original position O
2, NH
3the technology on plasma treatment Si surface, the oxynitrides passivation layer that the one deck of growing between high K dielectric film and Si is very thin, this passivation layer can suppress the growth of boundary layer.Then use the plasma-grown mode high K dielectric film of growing, and original position carries out oxygen plasma post-treatment to described high K dielectric film, reduce the oxygen room in film.This method be conducive to reduce interface resilient coating thickness and interface roughness, suppressed Elements Diffusion between substrate and film, be conducive to reduce equivalent gate oxide thickness.
Accompanying drawing explanation
Fig. 1 is shown as the preparation method's of high-K medium film of the present invention preparation flow schematic diagram.
Element numbers explanation
S1-S7 step 1)～step 7)
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to Fig. 1.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
As shown in Figure 1, the invention provides a kind of preparation method of high-K medium film, at least comprise the following steps:
As shown in S1 in Fig. 1, first carry out step 1), a Si substrate or SOI substrate are provided, and adopt H
2sO
4and H
2o
2mixed solution cleans described Si substrate or SOI substrate, and particularly, employing volume ratio is 3～5: 1 H
2sO
4, H
2o
2mixed solution cleans described Si substrate or SOI substrate, and scavenging period is 5～15min.
In the present embodiment, adopt the H that volume ratio is 4: 1
2sO
4, H
2o
2mixed solution cleans described Si substrate or SOI substrate, and scavenging period is 5～15min.Certainly, in other embodiments, described volume ratio can be 3: 1 or 5: 1 etc.Because general Si substrate or SOI substrate surface may have organic impurities, this step can be removed the organic substance of described Si substrate or SOI substrate surface, improves the degree of purity of substrate surface.
As shown in S2 in Fig. 1, then carry out step 2), adopt RCA ablution to clean described Si substrate or SOI substrate.
Particularly, first adopting volume ratio is 1: 0.5～2: 4～6 NH
3h
2o, H
2o
2, H
2o mixed solution cleans described Si substrate or SOI substrate, and scavenging period is 5～15min, and then adopting volume ratio is Si substrate or SOI substrate described in 0.5%～1.5% HF aqueous cleaning, and scavenging period is 20～40s; Finally adopting volume ratio is 1: 0.5～2: 5～7 HCl, H
2o
2, H
2o solution cleans described Si substrate or SOI substrate, and scavenging period is 5～15min.
In the present embodiment, first adopting volume ratio is the NH of 1: 1: 5
3h
2o, H
2o
2, H
2o mixed solution cleans described Si substrate or SOI substrate, and scavenging period is 10min, and then adopting volume ratio is Si substrate or SOI substrate described in 1% HF aqueous cleaning, and scavenging period is 30s; Finally adopting volume ratio is HCl, the H of 1: 1: 6
2o
2, H
2o solution cleans described Si substrate or SOI substrate, and scavenging period is 10min.
In another embodiment, first adopting volume ratio is the NH of 1: 0.5: 4
3h
2o, H
2o
2, H
2o mixed solution cleans described Si substrate or SOI substrate, and scavenging period is 5min, and then adopting volume ratio is Si substrate or SOI substrate described in 0.5% HF aqueous cleaning, and scavenging period is 20; Finally adopting volume ratio is HCl, the H of 1: 0.5: 5
2o
2, H
2o solution cleans described Si substrate or SOI substrate, and scavenging period is 5min.
In another embodiment, first adopting volume ratio is the NH of 1: 2: 6
3h
2o, H
2o
2, H
2o mixed solution cleans described Si substrate or SOI substrate, and scavenging period is 15min, and then adopting volume ratio is Si substrate or SOI substrate described in 1.5% HF aqueous cleaning, and scavenging period is 40s; Finally adopting volume ratio is HCl, the H of 1: 2: 7
2o
2, H
2o solution cleans described Si substrate or SOI substrate, and scavenging period is 15min.
As shown in S3 in Fig. 1, then carry out step 3), adopt HF solution to clean described Si substrate or SOI substrate.
Particularly, Si substrate or SOI substrate described in the HF aqueous cleaning that employing volume ratio is 0.5%～1.5%.Preferably, be 45～75s to the scavenging period of described Si substrate or SOI substrate.
In the present embodiment, Si substrate or SOI substrate described in the HF aqueous cleaning that employing volume ratio is 1%.Preferably, be 60s to the scavenging period of described Si substrate or SOI substrate.Certainly, in other embodiments, described volume ratio can be 0.5% or 1.5% etc.Described scavenging period can be 45s or 75s etc., needs to adopt according to demand different schemes.Because can form SiO on Si surface after RCA ablution
2layer, SiO
2layer can have a strong impact on reducing of interfacial layer thickness and leakage current, so again remove surface oxide layer with HF after RCA ablution, therefore, this step can reduce interfacial layer thickness effectively.
As shown in S4 in Fig. 1, then carry out step 4), adopt O plasma to carry out plasma treatment to described Si substrate or SOI substrate.Particularly, described Si substrate or SOI substrate are placed in to ALD reaction chamber and are warming up to 160～200 ℃, then pass into O to described ALD reaction chamber
2and add that RF power processes described Si substrate or SOI substrate to produce O plasma.
As shown in S5 in Fig. 1, then carry out step 5), adopt N and H plasma original position to carry out plasma treatment to described Si substrate or SOI substrate, to form oxynitrides passivation layer at described Si substrate or SOI substrate surface.
Particularly, adopt original position O
2and pass into NH to described ALD reaction chamber
3, keep step 4) in ALD reaction chamber in state constant, pass into NH to it
3gas, then adds that RF power makes its ionization, producing O, N, H plasma is processed described Si substrate or SOI substrate, to form oxynitrides passivation layer on its surface.This passivation layer can suppress the growth of boundary layer.
As shown in S6 in Fig. 1, then carry out step 6), using plasma enhancement mode atomic layer deposition method deposits high-k gate dielectric films on described oxynitrides passivation layer.Particularly, the material of described high-k gate dielectric films is Al
2o
3, HfO
2, La
2o
3, Gd
2o
3, ZrO
2or the binary of its combination in any or oxide more than binary.
In the present embodiment, the material of described high-K gate dielectric film is HfO
2/ La
2o
3film.Certainly, in other embodiments, described high-K gate dielectric film can be also HfO
2/ Al
2o
3film etc.
As shown in S7 in Fig. 1, then carry out step 7), adopt O plasma original position to carry out plasma treatment to described high-k gate dielectric films.
Particularly, pass into O to described ALD reaction chamber
2, then add that RF power processes described high-k gate dielectric films to produce O plasma original position, to reduce the oxygen room in described high-k gate dielectric films.Keep step 6) in the state of ALD reaction chamber constant, pass into O to it
2, then add that RF power processes described high-k gate dielectric films to produce O plasma, to reduce the oxygen room in described high-k gate dielectric films.
In sum, the preparation method of high-K medium film of the present invention added H before the RCA of standard ablution
2sO
4, H
2o
2cleaning step, can remove sample surfaces organic substance, improve the degree of purity of substrate surface.After RCA ablution, again remove surface oxide layer with HF, can effectively reduce film interface layer thickness.Utilize plasma Atomic layer deposition method, adopt original position O
2, NH
3the technology on plasma treatment Si surface, the oxynitrides passivation layer that the one deck of growing between high K dielectric film and Si is very thin, this passivation layer can suppress the growth of boundary layer.Then use the plasma-grown mode high K dielectric film of growing, and original position carries out oxygen plasma post-treatment to described high K dielectric film, reduce the oxygen room in film.This method be conducive to reduce interface resilient coating thickness and interface roughness, suppressed Elements Diffusion between substrate and film, be conducive to reduce equivalent gate oxide thickness.So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210075127.0A CN102592974B (en) | 2012-03-20 | 2012-03-20 | Preparation method for high-K medium film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210075127.0A CN102592974B (en) | 2012-03-20 | 2012-03-20 | Preparation method for high-K medium film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102592974A CN102592974A (en) | 2012-07-18 |
| CN102592974B true CN102592974B (en) | 2014-07-02 |
Family
ID=46481452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210075127.0A Expired - Fee Related CN102592974B (en) | 2012-03-20 | 2012-03-20 | Preparation method for high-K medium film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102592974B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760657A (en) * | 2012-07-27 | 2012-10-31 | 中国科学院上海微系统与信息技术研究所 | Method for preparing high K grating medium film and MIS (Management Information System) capacitor on InP (Indium Phosphide) substrate |
| CN103065955B (en) * | 2012-11-21 | 2015-11-18 | 中国科学院微电子研究所 | Method for preparing gate dielectric structure by using ALD (atomic layer deposition) |
| CN103839984A (en) * | 2012-11-26 | 2014-06-04 | 北京有色金属研究总院 | InP/high kappa gate medium stack structure and preparation method thereof |
| KR102099881B1 (en) * | 2013-09-03 | 2020-05-15 | 삼성전자 주식회사 | Semiconductor device and method of fabricating the same |
| CN103730373B (en) | 2013-12-31 | 2016-09-07 | 京东方科技集团股份有限公司 | The preparation method of a kind of semiconductor devices and semiconductor devices |
| CN105448657A (en) * | 2014-09-02 | 2016-03-30 | 无锡华润上华半导体有限公司 | Method for improving threshold voltage uniformity of high-voltage device |
| CN105336596B (en) * | 2015-09-27 | 2018-06-26 | 上海华力微电子有限公司 | A kind of preparation method of high-k boundary layer |
| CN108831743A (en) * | 2018-06-25 | 2018-11-16 | 汕头市信音电子科技有限公司 | A kind of mim structure thin-film capacitor preparation process |
| CN113394075A (en) * | 2021-05-10 | 2021-09-14 | 上海华力集成电路制造有限公司 | high-K dielectric layer repairing method |
| CN114551608A (en) * | 2022-03-09 | 2022-05-27 | 浙江理工大学 | A kind of plasma-treated gallium oxide-based solar-blind ultraviolet detector and preparation method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100352062C (en) * | 2003-10-30 | 2007-11-28 | 上海集成电路研发中心有限公司 | Grid structure from material with high dielectric constant and preparing technique |
| CN100517601C (en) * | 2005-12-05 | 2009-07-22 | 台湾积体电路制造股份有限公司 | Method for forming high dielectric constant dielectric layer, semiconductor device and manufacturing method thereof |
| CN101656203A (en) * | 2008-08-19 | 2010-02-24 | 中芯国际集成电路制造(上海)有限公司 | Method and system for manufacturing multi-gate transistor |
| CN101692460A (en) * | 2009-10-15 | 2010-04-07 | 复旦大学 | High dielectric constant membrane material with continuously adjustable forbidden bandwidth and preparation method thereof |
| CN101850944A (en) * | 2009-03-30 | 2010-10-06 | 中国科学院半导体研究所 | Method for Depositing Silicon Nitride Film Using 13.56MHz RF Power Source |
| CN102017083A (en) * | 2008-05-02 | 2011-04-13 | 分子间公司 | Combinatorial plasma enhanced deposition techniques |
| CN102142369A (en) * | 2011-01-05 | 2011-08-03 | 复旦大学 | Method for improving performance of SiC (Semiconductor Integrated Circuit) device |
| CN102154711A (en) * | 2010-12-31 | 2011-08-17 | 百力达太阳能股份有限公司 | Monocrystal silicon cleaning liquid and precleaning process |
| CN102332395A (en) * | 2011-09-23 | 2012-01-25 | 复旦大学 | A method for selectively depositing gate oxide and gate electrode |
-
2012
- 2012-03-20 CN CN201210075127.0A patent/CN102592974B/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100352062C (en) * | 2003-10-30 | 2007-11-28 | 上海集成电路研发中心有限公司 | Grid structure from material with high dielectric constant and preparing technique |
| CN100517601C (en) * | 2005-12-05 | 2009-07-22 | 台湾积体电路制造股份有限公司 | Method for forming high dielectric constant dielectric layer, semiconductor device and manufacturing method thereof |
| CN102017083A (en) * | 2008-05-02 | 2011-04-13 | 分子间公司 | Combinatorial plasma enhanced deposition techniques |
| CN101656203A (en) * | 2008-08-19 | 2010-02-24 | 中芯国际集成电路制造(上海)有限公司 | Method and system for manufacturing multi-gate transistor |
| CN101850944A (en) * | 2009-03-30 | 2010-10-06 | 中国科学院半导体研究所 | Method for Depositing Silicon Nitride Film Using 13.56MHz RF Power Source |
| CN101692460A (en) * | 2009-10-15 | 2010-04-07 | 复旦大学 | High dielectric constant membrane material with continuously adjustable forbidden bandwidth and preparation method thereof |
| CN102154711A (en) * | 2010-12-31 | 2011-08-17 | 百力达太阳能股份有限公司 | Monocrystal silicon cleaning liquid and precleaning process |
| CN102142369A (en) * | 2011-01-05 | 2011-08-03 | 复旦大学 | Method for improving performance of SiC (Semiconductor Integrated Circuit) device |
| CN102332395A (en) * | 2011-09-23 | 2012-01-25 | 复旦大学 | A method for selectively depositing gate oxide and gate electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102592974A (en) | 2012-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102592974B (en) | Preparation method for high-K medium film | |
| CN102332395B (en) | A method for selectively depositing gate oxide and gate electrode | |
| CN100530562C (en) | Atomic layer deposited dielectric layers | |
| CN101924026B (en) | Methods to reduce the thickness of the interface layer | |
| CN101685777A (en) | Method for manufacturing semiconductor device | |
| US8772100B2 (en) | Structure and method for forming a low gate resistance high-K metal gate transistor device | |
| CN103094325B (en) | Semiconductor device and manufacture method thereof | |
| CN102129979A (en) | Semiconductor device and method for manufacturing the same | |
| Bhuyian et al. | Cyclic Plasma Treatment during ALD Hf1-xZrxO2 Deposition | |
| CN102231365B (en) | Preparation method of non-volatile charge storage device, non-volatile charge storage device and application of device | |
| CN102543751A (en) | Preparation method of Ge-based Metal Oxide Semiconductor (MOS) device with sub-nanometer equivalent to oxide thickness | |
| CN109055916B (en) | Method for preparing ferroelectric film at low temperature through PEALD (plasma enhanced chemical vapor deposition) and ferroelectric film | |
| CN101962758B (en) | Method for forming Hf-based gate medium film on germanium substrate by atomic layer deposition at low temperature | |
| CN102856184A (en) | Method for preparing high-k gate medium on surface of multi-layer graphene | |
| CN113178477A (en) | HfO2Ferroelectric thin film and method for depositing same | |
| KR101455263B1 (en) | Method for reducing native oxide on substrate and method for manufacturing a semiconductor device using the same | |
| CN103646865A (en) | Method for preparing ultrathin germanium oxide interface repairing layer on Ge substrate | |
| TWI635539B (en) | High-k dielectric layer, manufacturing method thereof and multi-function device for performing the same | |
| CN105529257A (en) | Method for optimizing stacked gate medium and germanium interface | |
| CN105047553A (en) | Surface treatment method for depositing high-dielectric value gate medium layer | |
| CN105304691B (en) | The method for being used to prepare the boundary layer of high-K dielectric layer | |
| CN105336596A (en) | Preparation method for high-dielectric-constant interface layer | |
| CN106328496B (en) | A kind of preparation method of high K boundary layer | |
| CN102509734A (en) | Method for preparing Ge-based MOS (metal-oxide semiconductor) capacitor by using ALD (atomic layer deposition) | |
| CN103065954B (en) | A kind of HfO 2the preparation method of film/HfSiNO boundary layer/Si substrate gate medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140702 Termination date: 20170320 |