CN205152318U - Column arc ion plating membrane device is assisted to grid - Google Patents
Column arc ion plating membrane device is assisted to grid Download PDFInfo
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- CN205152318U CN205152318U CN201520837539.2U CN201520837539U CN205152318U CN 205152318 U CN205152318 U CN 205152318U CN 201520837539 U CN201520837539 U CN 201520837539U CN 205152318 U CN205152318 U CN 205152318U
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Abstract
The utility model belongs to the physical vapor deposition field discloses a column arc ion plating membrane device is assisted to grid. The device includes by the column negative pole target of I power supply of power, by the work rest of grid bias power supply power supply, place a grid by II power supplies of power before column negative pole target. The utility model discloses combine together grid and post arc, kept higher thin film deposition speed under the prerequisite that improves film cohesion, smoothness.
Description
Technical field
The utility model belongs to art of physical vapor deposition, relates to a kind of grid for atomically flat film and assists column arc ion plating apparatus, may be used for the growth of smooth metal film, nitride film and carbide thin film.
Background technology
At present, cathodic vacuum arc (CVA) deposition technique with advantages such as ionization level is high, sedimentation rate is high, technology maturations is one of main preparation methods preparing high-performance rigid film, arc ion plating, due to reasons such as its sedimentation effect are high, is widely used in preparation process that is wear-resisting, anticorrosion and optical thin film.But because of reasons such as the generation mechanism of conventional arc arc spot and its irregular movements, the arc spot life-span in deposition process is short, technology stability is poor; Macroscopical macrobead codeposition in film is seriously polluted, unrelieved stress is high, film-substrate cohesion is poor etc. is the critical bottleneck problem (patent ZL200610131894.3) limiting its application.The Magnetic filter electric arc technology of preparing (FCVA) improved is though reduce macroscopical oarse-grained pollution to a certain extent, and the growth velocity of film is with declining to a great extent, and technical sophistication, cost is high.
The problems such as the Film roughness that causes of drop produced for electric arc is large, at present, various countries scientist and industrial community personage have attempted reducing macroscopical oarse-grained codeposition by different strainer measure.Different according to strainer principle, be roughly mainly divided into the mechanical type filter in sight line and outside sight line and the large class of magnetic filter two.Mechanical type mainly stops with mechanism or weakens macrobead stream (patent ZL200710158829.4), Magnetic filter formula is then is mostly the magnetic field utilizing magnet coil to produce certain curvature in pipeline, charged particle deflects by lorentz's force constraint has the trend of moving along magnetic line of force in magnetic field, and quality is large, the little particle geometric of carried charge is not affected by magnetic fields only does translational motion under inertia effect, directly impinges upon on duct wall and reaches filtration object.To sum up state, Magnetic filter technology reduces the effective way of the large drop of arc ion plating, but magnetic filter is complicated, duty space is large, sedimentation rate is low, and the arc source that unit cavity assembles is far fewer than independent arc source, and film deposition rate is the 1/5 even lower of arc ion plating, therefore production efficiency is low, and equipment and production cost costliness.Relative Magnetic filter, effectively can reduce roughness while column rotating arc has higher sedimentation rate, but still not reach atomically flat, and part film still needs aftertreatment could meet high-precision demand.
Utility model content
The purpose of this utility model is density and the continuity that the large drop produced to solve arc ion plating reduces film, cause the film bonding force of growth poor, surfaceness is high, the film of deposition needs the factors such as second polishing, make it be difficult to move contact component surface in precision to be applied on a large scale, and second polishing adds the problem of cost, and the grid proposing a kind of Direct precipitation smooth hard film assists column electric arc ion plating device.
Grid assists column electric arc ion plating device, comprises the cylindrical cathode target of being powered by power supply I, the work rest of being powered by grid bias power supply, it is characterized in that placing a grid of being powered by power supply II before cylindrical cathode target.
Described power supply I is direct supply, direct current pulse power source or high power pulsed source.
Described grid is circular hole, square hole or delthyrium, and pore size is 2-8mm, distance column cathode target 4-12mm.
Described power supply II is direct-flow positive voltage power supply, negative bias power supply or positive and negative recurrent pulse power supply, radio-frequency power supply, microwave power supply.
Power supply I provides energy to cylindrical cathode target, for scratch start and maintenance arc discharge; When power supply II is direct-flow positive voltage power supply, grid is supplementary anode, accelerates electronics and improves plasma ionization level further, improve the probability of collision of electronics and neutral particle, electronics and the further refinement drop of droplet collision; When power supply II is negative bias power supply, accelerated band electron ion improves plasma ionization level further, improves the probability of collision of electronics and neutral particle, electronics and the further refinement drop of droplet collision; When power supply II is positive and negative recurrent pulse power supply, radio-frequency power supply or microwave power supply, except improving plasma ionization level further, accelerated band electron ion improves plasma ionization level further, improves the probability of collision of electronics and neutral particle, electronics and the further refinement drop of droplet collision; On the other hand, when large drop is through grid hole, potential field can compress drop, departs from potential field blast refinement subsequently.
The utility model contrast prior art has following innovative point: use the mode that grid combines with post arc, significantly strengthens ionization level and plasma potential field, makes the effective refinement of drop or disappearance.
The utility model contrast prior art has following remarkable advantage:
1, grid combines with post arc and significantly improves the slickness of film.
2, grid combines with post arc and gives plated film more handiness, can be regulated, preparation nanostructure and multilayer film, thus the physical and chemical performance improving and optimize film by the selection of C-power supply and sequential.
3, grid combines with post arc, under the prerequisite improving film bonding force, slickness, maintain higher film deposition rate.
4, contrast independent post arc (electric current is larger, Film roughness is larger), adding of grid can make post arc use larger electric current, and film deposition rate improves 1.5-3 doubly.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
In figure: 1-power supply I, 2-power supply II, 3-cylindrical cathode target, 4-grid, 5-grid bias power supply, 6-work rest.
Embodiment
Embodiment 1
As shown in Figure 1, grid assists column electric arc ion plating device, comprises the cylindrical cathode target 3 of being powered by power supply I 1, the work rest 6 of being powered by grid bias power supply 5, places a grid 4 of being powered by power supply II 2 before cylindrical cathode target 3.
Power supply I 1 is direct supply, direct current pulse power source or high power pulsed source.
Grid 4 is circular hole, square hole or delthyrium, and pore size is 2-8mm.
Grid 4 is apart from column cathode target 4-12mm.
Power supply II 2 is direct-flow positive voltage power supply, negative bias power supply or positive and negative recurrent pulse power supply, radio-frequency power supply, microwave power supply.
Embodiment 2
The device shown in Fig. 1 is adopted to realize the preparation of atomically flat film.
Adopt sidespin rotary column target 3(Fig. 1) as coating source, combine the power supply 1 as arc cathode such as direct current pulse power source, AC power with direct supply, direct current pulse power source, multiband; Before distance target, 4-8cm places a square hole grid, aperture 4-6mm, and by direct current positive bias, DC negative bias voltage, assembled pulse bias voltage, radio-frequency power supply or microwave power supply provide power supply 2 for grid, provide bias voltage to workpiece plate 6 by bias voltage 5.The plasma body that electric arc is formed and liquid will by grids 4 in the process flying to workpiece plate, liquid or collision are on grid, or fly to substrate by grid hole, collision or the liquid that passes through can refinement ionizations under mechanical effect and action of plasma, and finally on workpiece, deposition obtains atomically flat film.
Such as, electrodeposited chromium coating is a kind of very outstanding corrosion protection coating, but its technological process can produce a large amount of sexavalent chrome waste liquid, serious environment pollution, and electrodeposited chromium Coating Surface Roughness is large, is difficult to be applied to the high place of accuracy requirement.Conventional electric arc chromium coating porosity is large, there is the problem of Performance Ratio plating difference.We are as follows to needing the wrist pin process of chromiumcoating process with said apparatus:
1) conventional cleaning: vacuum chamber is put in oil removing, rust cleaning, oven dry into;
2) when back end vacuum reaches 1 × 10
-4time start plated film, argon gas controls at 0.4Pa, bias voltage 800V, grid voltage+200V, electric arc 100A, cleaning 5-10 minute; Bias voltage adjusts back 150V afterwards, telephone power 150A, grid voltage-100V, deposits 2 hours, shutdown cooling;
3) etc. furnace temperature takes out sample, the visible metallic mirror surface gloss of sample naked eyes after reducing, test roughness 0.12nm.
Claims (5)
1. grid assists column electric arc ion plating device, comprise the cylindrical cathode target (3) of being powered by power supply I (1), the work rest (6) of being powered by grid bias power supply (5), it is characterized in that the grid (4) of being powered by power supply II (2) the front placement of cylindrical cathode target (3).
2. device as claimed in claim 1, is characterized in that described power supply I (1) is direct supply, direct current pulse power source or high power pulsed source.
3. device as claimed in claim 1, is characterized in that described grid (4) is circular hole, square hole or delthyrium, and pore size is 2-8mm.
4. device as claimed in claim 1, is characterized in that described grid (4) distance column cathode target 4-12mm.
5. device as claimed in claim 1, is characterized in that described power supply II (2) is direct-flow positive voltage power supply, negative bias power supply or positive and negative recurrent pulse power supply, radio-frequency power supply, microwave power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520837539.2U CN205152318U (en) | 2015-10-27 | 2015-10-27 | Column arc ion plating membrane device is assisted to grid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520837539.2U CN205152318U (en) | 2015-10-27 | 2015-10-27 | Column arc ion plating membrane device is assisted to grid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205152318U true CN205152318U (en) | 2016-04-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520837539.2U Active CN205152318U (en) | 2015-10-27 | 2015-10-27 | Column arc ion plating membrane device is assisted to grid |
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| CN (1) | CN205152318U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200378A (en) * | 2015-10-27 | 2015-12-30 | 中国科学院兰州化学物理研究所 | Gate-assisted columnar arc ion plating apparatus |
-
2015
- 2015-10-27 CN CN201520837539.2U patent/CN205152318U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105200378A (en) * | 2015-10-27 | 2015-12-30 | 中国科学院兰州化学物理研究所 | Gate-assisted columnar arc ion plating apparatus |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |