CN205104516U - Superintegration COB white light source - Google Patents
Superintegration COB white light source Download PDFInfo
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- CN205104516U CN205104516U CN201520929524.9U CN201520929524U CN205104516U CN 205104516 U CN205104516 U CN 205104516U CN 201520929524 U CN201520929524 U CN 201520929524U CN 205104516 U CN205104516 U CN 205104516U
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- chip
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- white light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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Abstract
The utility model provides a superintegration COB white light source, arrange and make a whole chip bonding wire district formation circular region in the conducting wire on its solid brilliant base plate, straightway regional including the segmental arc of 2 symmetric distributions and 2 symmetric distributions is regional, array chip locates the circle intra -area to encircle silk routing and gold thread welding with the conducting wire of both sides through reverse, two solder joints are the electrode of conducting wire and LED chip respectively, and the bank peak of routing exceeds LED chip 20 -80 micron, and solder joint lead wire on the electrode of LED chip and horizontal angular separation are at 15 -80, and the lead wire and the horizontal angular separation of solder joint is 30 -80 on the conducting wire. The utility model discloses an optimize chip array, connection in series -parallel and conducting wire layer, and optimize the routing during chip electric connection, the thermal current of having guaranteed the chip that emits light and heat dredge with the exciting radiation uniformity of light, realized superintegration, the high power encapsulation of light source.
Description
Technical field
The utility model relates to a kind of High Density Integration COB white light source.
Background technology
LED illumination possesses significant consumption reduction, the economic benefit such as energy-conservation because of its efficient electricity-saving, obtained in recent years widely popularize and application at many lighting fields and industry.Under current industrial technical merit, the technology path that LED single colored chip adds fluorophor is still the main way realizing white light LEDs.What this wherein commonly used the most is excite chip to paste the packing forms being coated with phosphor gel, the heat conductivility poor due to fluorescent glue and directly contact are emitted light and heat and are excited chip, easily cause the phosphor gel of coating to occur heat ageing, and then affect light quality and the stability in use of white light source.
On the other hand, white light LEDs is popularized in illumination still exists the lower key issue of luminous flux with application aspect, namely as lighting source, must send more light as far as possible, seek higher energy utilization efficiency.And single-chip power obviously cannot meet lighting field to high brightness, high-power requirement.Along with great power LED module is towards high integration, volume miniaturization, for realizing the luminous flux needed for general lighting, high-power, high integrated white light LED technology must be sought.
Summary of the invention
The technical problems to be solved in the utility model, is to provide a kind of High Density Integration COB white light source.
A kind of High Density Integration COB white light source of the present utility model is achieved in that a kind of High Density Integration COB white light source, comprise die bond substrate and solid state fluorescence body, described solid state fluorescence body is positioned at the dead ahead of described die bond substrate, described die bond substrate comprises heat sink substrate further and is located at conductive circuit layer and the array chip of this heat sink substrate, described conductive circuit layer comprises chip wire welding area and outer even electrode district, and described chip wire welding area and the outer electrode district that connects are electrically connected; Described chip wire welding area is made up of complex root conducting wire, and the center conductive circuit being wherein positioned at chip bonding wire district center position is the longest and be straight line; The two ends being positioned at the conducting wire of center conductive circuit both sides are straightway, middle outwards arch camber section, and the straightway of the conducting wire in more past outside is shorter, and segmental arc is longer; Thus making whole chip wire welding area form a border circular areas, this border circular areas is divided into 4 sector regions, 2 symmetrical segmental arc regions and 2 symmetrical straightway regions.
Wherein, High Density Integration COB white light source of the present utility model also comprises limit for height keeper, and described limit for height keeper is located on described die bond substrate for supporting described solid state fluorescence body.
Wherein, High Density Integration COB white light source of the present utility model also comprises reflective dam body, and described reflective dam body is located on the die bond substrate at described limit for height keeper outer rim place, and is highly not less than limit for height keeper.
Wherein, described limit for height keeper is higher than described die bond substrate 150-350 micron.
Wherein, the external diameter of described solid state fluorescence body is not more than the internal diameter of reflective dam body.
Wherein, described array chip is located in border circular areas, and with the conducting wire of both sides by oppositely encircleing silk routing and gold thread welds; When described reverse arch silk routing and gold thread welding, 1st solder joint is conducting wire, 2nd solder joint is the electrode of LED chip, the bank peak of described routing exceeds LED chip 20-80 micron, but not higher than limit for height keeper, the lead-in wire of described 1st solder joint and horizontal direction angle are at 15-80 °, and the lead-in wire of the 2nd solder joint and horizontal direction angle are 30-80 °.
The utility model tool has the following advantages:
1., by the optimization arrangement of array chip on die bond substrate and the subregion of optimizing distribution of conductive circuit layer thereof, ensure that the hot-fluid of the chip that emits light and heat dredges the uniformity with chip exciting radiation light, achieve the High Density Integration of light source, high power package;
2. arranged by reflective dam body, optimize routing, add effective light output, packaged light source possesses high light flux, specular removal feature and low cost.
Accompanying drawing explanation
The utility model is further described with reference to the accompanying drawings in conjunction with the embodiments.
Fig. 1 is the Facad structure schematic diagram of the die bond substrate in the utility model High Density Integration COB white light source.
Fig. 2 is the distributed architecture schematic diagram of array chip in the utility model High Density Integration COB white light source.
Fig. 3 is the side structure schematic diagram in the utility model High Density Integration COB white light source.
Fig. 4 is the bonding wire structure of the partial enlarged drawing of Fig. 3, main display chip.
Embodiment
As shown in Figures 1 to 4, High Density Integration COB white light source of the present utility model, comprises die bond substrate 1 and solid state fluorescence body 2, also comprises limit for height keeper 3 and reflective dam body 4.Described solid state fluorescence body 2 is positioned at the dead ahead of described die bond substrate 1, and described limit for height keeper 3 is located at for supporting described solid state fluorescence body 2 on described die bond substrate 1, and described limit for height keeper 3 has 150-350 micron higher than described die bond substrate 1.Described reflective dam body 4 is located on the die bond substrate 1 at described limit for height keeper 3 outer rim place, and is highly not less than limit for height keeper 3.
Described die bond substrate 1 comprises heat sink substrate 11 further and is located at the conductive circuit layer 12 of this heat sink substrate 11, insulating barrier 13 and array chip 14.
Described conductive circuit layer 12 comprises chip wire welding area and outer even electrode district, and described chip wire welding area and the outer electrode district that connects are electrically connected; Described chip wire welding area is made up of complex root conducting wire 121, and the center conductive circuit being wherein positioned at chip bonding wire district center position is the longest and be straight line; The two ends being positioned at the conducting wire of center conductive circuit both sides are straightway, middle outwards arch camber section, and the straightway of the conducting wire in more past outside is shorter, and segmental arc is longer; Thus making whole chip wire welding area form a border circular areas, this border circular areas is divided into 4 sector regions, 2 symmetrical segmental arc regions and 2 symmetrical straightway regions; The described outer electrode district that connects is divided into positive polar region 122 and negative pole district 123, and this positive polar region 122 and negative pole district 123 are located at the two ends of chip wire welding area.
Described array chip 14 is located in border circular areas, each LED chip 142 is fixed on insulating barrier 13 place between two adjacent conductive tracks 121; The conducting wire 121 of described array chip 14 and both sides is by oppositely encircleing silk routing and gold thread welds; When described reverse arch silk routing and gold thread welding, 1st solder joint is conducting wire, 2nd solder joint is the electrode of LED chip, the bank peak of described routing exceeds the height H=20-80 micron of LED chip, but not higher than limit for height keeper, the lead-in wire of described 1st solder joint and horizontal direction included angle A are at 15-80 °, and the lead-in wire of the 2nd solder joint and horizontal direction included angle B are 30-80 °.
The manufacturing process of a kind of High Density Integration COB white light source of the present utility model comprises die bond substrate manufacture, limit for height keeper makes, bonding wire is electrically connected, reflective dam body makes, fills glue precuring and cap seal solid state fluorescence body.
As shown in Figure 1, described die bond substrate 1 makes and comprises:
11) arrangement of conductive circuit layer 12 and array chip 14 is designed; Described conductive circuit layer 12 comprises described chip wire welding area and outer even electrode district, and described chip wire welding area and the outer electrode district that connects are electrically connected; Described chip wire welding area is made up of complex root conducting wire 121, and the center conductive circuit being wherein positioned at chip bonding wire district center position is the longest and be straight line; The two ends being positioned at the conducting wire of center conductive circuit both sides are straightway, middle outwards arch camber section, and the straightway of the conducting wire in more past outside is shorter, and segmental arc is longer; Thus making whole chip wire welding area form a border circular areas, this border circular areas is divided into 4 sector regions, 2 symmetrical segmental arc regions and 2 symmetrical straightway regions; The described outer electrode district that connects is divided into positive polar region 122 and negative pole district 123, and this positive polar region 122 and negative pole district 123 are located at the two ends of chip wire welding area;
12) in heat sink substrate 11, described conductive circuit layer 12 is obtained by typography, simultaneously region overlay electric insulation layer 13 beyond conductive circuit layer 12; In one embodiment, heat sink substrate 11 selects 99% aluminium oxide ceramic substrate, use typography on aluminium oxide ceramic substrate, print the thick silver-plated circuit of about 15um, obtained described conductive circuit layer 12, and insulating glass protection is printed on the circuit of welding function, form electric insulation layer 13;
13) as shown in Figure 2, by die bond technique, array chip 14 being fixed on border circular areas, e.g., can be insulating barrier 13 place be fixed on by each LED chip 142 between two adjacent conductive tracks 121, forms die bond substrate 1, in specific embodiment, LED chip 142 selects the 22mil*35mil blue chip of three peaces, the high heat-conductive solid crystal glue of insulation is used to be fixed on substrate by LED chip 142 by the chip array designed, selected crystal-bonding adhesive preferably insulate high heat conduction high reflectance glue, on die bond substrate 1, conductive circuit layer 12 distribution should ensure being evenly distributed of LED chip 142, it is made to be radiated at illuminance homogenizing on fluorescence ceramics sheet, simultaneously in specific embodiment, the string of LED chip 142 logic be first in parallel after series connection, improve the global reliability of COB light source greatly, improve the shock resistance of COB light source.
As shown in Figure 3, described limit for height keeper 3 makes and is: make limit for height keeper 3 in crystal bonding area and border circular areas periphery; During concrete enforcement, the red light chips can fixing three three peace 8mil*8mil carries out limit for height as fixing height limiter.
As shown in Figure 4, described bonding wire is electrically connected and is: utilize oppositely arch silk routing and gold thread welding, the conducting wire 121 that the LED chip 142 in array chip 14 is corresponding to conductive circuit layer 12 forms electrical connection; Wherein, when described reverse arch silk routing and gold thread welding, 1st solder joint is conducting wire 121,2nd solder joint is the electrode of LED chip 142, and the 2nd solder joint connects for planting ball bonding, in order to avoid leaky should exceed the height of at least one gold goal of chip, gold goal height is about 1mil, the bank peak of described routing exceeds the height H=20-80 micron of LED chip 142, but not higher than limit for height keeper 3, the lead-in wire of described 1st solder joint and horizontal direction included angle A are at 15-80 °, and the lead-in wire of the 2nd solder joint and horizontal direction included angle B are 30-80 °.Compared to the bonding wire wire spoke height of conventional package 120um-250um, adopt the utility model, significantly can improve the hot situation of array chip.
Described reflective dam body 4 makes: make reflective dam body 4 in limit for height keeper 3 periphery, and be highly not less than limit for height keeper 3; During specific implementation, box dam glue can be used with crystal bonding area central point for the circular box dam glue of a circle in circle, and namely drying forming obtains reflective dam body 4.Box dam glue is high reverse--bias colloid, and the reflectivity of this high reverse--bias colloid to radius in 200-1000 nanometer is not less than 70%.
Describedly fill glue precuring and be: filling transparent colloid in the space that reflective dam body 4 surrounds, did not have described limit for height keeper 3, after colloid levelling, was exhausted and precuring; The temperature of described precuring is 60 DEG C, and the time is 0.5 hour; Wherein, transparent colloid can be organic silica gel, and the glue amount of organic silica gel is exceed spacing chip about 20 microns after levelling, heats 0.5 hour, allow glue face flow to and discharged by all bubbles as far as possible in level under 60 DEG C of environment.
Cap seal solid state fluorescence body 2 is: be placed in by solid state fluorescence body 2 on the limit for height keeper 3 in described reflective dam body 4, keeps minute-pressure state and carries out successive depths hot curing.Described degree of depth hot curing is first is 80 DEG C with temperature, solidifies 0.5 hour; Again with temperature 150 DEG C, solidify 1 hour; Last with temperature 60 C, solidify 0.5 hour.
According to light source obtained in above-mentioned specific embodiment, it is under luminous flux is not less than 15000 lumen situations, the light efficiency of light source is all not less than 140lm/W, and light source die assembly welding point place temperature declines nearly 40 DEG C, and use that the area exciting chip is maximum accounts for 75% of crystal bonding area area.Compared to the flip-chip packaged of close integration density, its light efficiency promotes nearly 15%, and light source cost of manufacture reduces about 40%.
Although the foregoing describe embodiment of the present utility model; but be familiar with those skilled in the art to be to be understood that; specific embodiment described by us is illustrative; instead of for the restriction to scope of the present utility model; those of ordinary skill in the art, in the modification of the equivalence done according to spirit of the present utility model and change, should be encompassed in scope that claim of the present utility model protects.
Claims (6)
1. a High Density Integration COB white light source, comprise die bond substrate and solid state fluorescence body, described solid state fluorescence body is positioned at the dead ahead of described die bond substrate, described die bond substrate comprises heat sink substrate further and is located at conductive circuit layer and the array chip of this heat sink substrate, it is characterized in that: described conductive circuit layer comprises chip wire welding area and outer even electrode district, described chip wire welding area and the outer electrode district that connects are electrically connected; Described chip wire welding area is made up of complex root conducting wire, and the center conductive circuit being wherein positioned at chip bonding wire district center position is the longest and be straight line; The two ends being positioned at the conducting wire of center conductive circuit both sides are straightway, middle outwards arch camber section, and the straightway of the conducting wire in more past outside is shorter, and segmental arc is longer; Thus making whole chip wire welding area form a border circular areas, this border circular areas is divided into 4 sector regions, 2 symmetrical segmental arc regions and 2 symmetrical straightway regions.
2. High Density Integration COB white light source according to claim 1, is characterized in that: also comprise limit for height keeper, and described limit for height keeper is located on described die bond substrate for supporting described solid state fluorescence body.
3. High Density Integration COB white light source according to claim 2, is characterized in that: also comprise reflective dam body, and described reflective dam body is located on the die bond substrate at described limit for height keeper outer rim place, and is highly not less than limit for height keeper.
4. High Density Integration COB white light source according to claim 3, is characterized in that: described limit for height keeper is higher than described die bond substrate 150-350 micron.
5. High Density Integration COB white light source according to claim 1, is characterized in that: the external diameter of described solid state fluorescence body is not more than the internal diameter of reflective dam body.
6. a kind of High Density Integration COB white light source according to claim 1, is characterized in that: described array chip is located in border circular areas, and with the conducting wire of both sides by oppositely encircleing silk routing and gold thread welds; When described reverse arch silk routing and gold thread welding, 1st solder joint is conducting wire, 2nd solder joint is the electrode of LED chip, the bank peak of described routing exceeds LED chip 20-80 micron, but not higher than limit for height keeper, the lead-in wire of described 1st solder joint and horizontal direction angle are at 15-80 °, and the lead-in wire of the 2nd solder joint and horizontal direction angle are 30-80 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520929524.9U CN205104516U (en) | 2015-11-20 | 2015-11-20 | Superintegration COB white light source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520929524.9U CN205104516U (en) | 2015-11-20 | 2015-11-20 | Superintegration COB white light source |
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| CN205104516U true CN205104516U (en) | 2016-03-23 |
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| CN201520929524.9U Active CN205104516U (en) | 2015-11-20 | 2015-11-20 | Superintegration COB white light source |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428498A (en) * | 2015-11-20 | 2016-03-23 | 福建中科芯源光电科技有限公司 | High-density integrated COB white light source and generation method therefor |
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2015
- 2015-11-20 CN CN201520929524.9U patent/CN205104516U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428498A (en) * | 2015-11-20 | 2016-03-23 | 福建中科芯源光电科技有限公司 | High-density integrated COB white light source and generation method therefor |
| CN105428498B (en) * | 2015-11-20 | 2017-03-15 | 福建中科芯源光电科技有限公司 | High Density Integration COB white light sources and preparation method thereof |
| WO2017084320A1 (en) * | 2015-11-20 | 2017-05-26 | 福建中科芯源光电科技有限公司 | Solid crystal substrate, high-density integrated cob white light source, and manufacturing method therefor |
| US10504875B2 (en) | 2015-11-20 | 2019-12-10 | Fujian Cas-Ceramic Optoelectronics Technology Co., Ltd | Die-bonding substrate, high-density integrated COB white light source and method for manufacturing the same |
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| C14 | Grant of patent or utility model | ||
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