CN205016508U - 封装的半导体器件 - Google Patents
封装的半导体器件 Download PDFInfo
- Publication number
- CN205016508U CN205016508U CN201520769653.6U CN201520769653U CN205016508U CN 205016508 U CN205016508 U CN 205016508U CN 201520769653 U CN201520769653 U CN 201520769653U CN 205016508 U CN205016508 U CN 205016508U
- Authority
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- China
- Prior art keywords
- distance piece
- lead frame
- tube core
- die flag
- encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 230000008878 coupling Effects 0.000 claims abstract description 40
- 238000010168 coupling process Methods 0.000 claims abstract description 40
- 238000005859 coupling reaction Methods 0.000 claims abstract description 40
- 150000001875 compounds Chemical class 0.000 claims abstract description 26
- 238000000465 moulding Methods 0.000 claims description 32
- 239000011810 insulating material Substances 0.000 claims description 19
- 239000011230 binding agent Substances 0.000 claims description 17
- 239000012774 insulation material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 34
- 239000002390 adhesive tape Substances 0.000 description 22
- XFJBGINZIMNZBW-CRAIPNDOSA-N 5-chloro-2-[4-[(1r,2s)-2-[2-(5-methylsulfonylpyridin-2-yl)oxyethyl]cyclopropyl]piperidin-1-yl]pyrimidine Chemical compound N1=CC(S(=O)(=O)C)=CC=C1OCC[C@H]1[C@@H](C2CCN(CC2)C=2N=CC(Cl)=CN=2)C1 XFJBGINZIMNZBW-CRAIPNDOSA-N 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 16
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- 229910000679 solder Inorganic materials 0.000 description 3
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- 239000011248 coating agent Substances 0.000 description 2
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- 238000005520 cutting process Methods 0.000 description 2
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 238000001035 drying Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract
本公开涉及封装的半导体器件。本实用新型的目的是解决现有技术中存在的相关问题。封装的半导体器件包括:管芯标记和多个引线框架指,每个引线框架指的近端与管芯标记隔开;间隔件,在间隔件的第一表面处机械且电耦合到管芯标记的第一表面;管芯,在管芯的第一表面处机械且电耦合到间隔件的第二表面;至少一个电连接器,将管芯的第二表面上的至少一个电接触件与至少一个引线框架指电耦合;模塑化合物,包封管芯、间隔件、至少一个电连接器的至少一部分、管芯标记的至少一部分和每个引线框架指的至少一部分。间隔件沿着间隔件的第二表面的宽度比管芯标记沿着管芯标记的第一表面的宽度大。本实用新型的一个有益技术效果是使用延伸的管芯尺寸。
Description
技术领域
本实用新型的方面一般涉及封装的半导体器件。
背景技术
半导体器件在使用前通常包入封装内(或部分包入封装内)。一些封装包含单个管芯,而其它则包含多个管芯。封装经常提供一些对管芯的保护(诸如防止腐蚀、冲击和其它伤害),并且还经常包括电引线或者将管芯的电接触件与母板连接的其它组件。封装还可以包括被配置为让热量从管芯消散到母板中或者到封装外的组件。
实用新型内容
本实用新型的一个目的是解决与现有技术中存在的一个或更多个问题相关的问题。
封装的半导体器件的实现方式可以包括:管芯标记(flag)和多个引线框架指,每个引线框架指的近端与管芯标记隔开;间隔件(spacer),在间隔件的第一表面处机械耦合并且电耦合到管芯标记的第一表面;管芯,在管芯的第一表面处机械耦合并且电耦合到间隔件的第二表面;至少一个电连接器,将管芯的第二表面上的至少一个电接触件与至少一个引线框架指电耦合;以及模塑化合物,包封管芯、间隔件、至少一个电连接器的至少一部分、管芯标记的至少一部分和每个引线框架指的至少一部分;其中间隔件沿着间隔件的第二表面的宽度比管芯标记沿着管芯标记的第一表面的宽度大。
封装的半导体器件的实现方式可以包括下列的一个、全部或任意一些:
管芯标记的第一表面可以在与管芯标记的第二表面相对的管芯标记的一侧上,间隔件的第一表面可以在与间隔件的第二表面相对的间隔件的一侧上,以及管芯的第一表面可以在与管芯的第二表面相对的管芯的一侧上。
每个引线框架指可以与管芯标记以间隙宽度隔开,并且间隔件可以越过每个间隙宽度并且在每个引线框架指之上延伸。
每个引线框架指的近端可以在间隔件之下。
管芯标记的第一表面和每个引线框架指的第一表面可以基本上是共面的。
管芯标记的第一表面和每个引线框架指的第一表面可以基本上是在间隔件之下共面的。
间隔件可以具有至少一个被配置为容纳绝缘材料的凹槽。
绝缘材料可以耦合到在间隔件和至少一个引线框架指之间的至少一个凹槽。
所述管芯使用导电粘合剂电耦合并且机械耦合到所述间隔件。
所述管芯沿着所述管芯的所述第一表面的宽度比所述管芯标记沿着所述管芯标记的所述第一表面的宽度大。
在封装的半导体器件内延伸管芯尺寸的方法的实现方式可以包括:在间隔件的第一表面处将间隔件机械耦合并且电耦合到管芯标记的第一表面,管芯标记由多个引线框架指包围,其中每个引线框架指的近端与管芯标记隔开;在管芯的第一表面处将管芯机械耦合并且电耦合到间隔件的第二表面;以及分别使用模塑化合物和包封化合物的一个对管芯、间隔件、管芯标记的至少一部分和每个引线框架指的至少一部分进行二次模塑(overmold)和包封中的一个;其中间隔件沿着间隔件的第二表面的宽度大于管芯标记沿着管芯标记的第一表面的宽度。
在封装的半导体器件内延伸管芯尺寸的方法的实现方式可以包括下列的一个、全部或任意一些:
每个引线框架指可以与管芯标记以间隙宽度隔开,而间隔件可以越过每个间隙宽度并且在每个引线框架指之上延伸。
每个引线框架指的近端可以在间隔件之下。
管芯标记的第一表面与每个引线框架指的第一表面可以基本上是共面的。
管芯可以使用导电粘合剂电耦合并且机械耦合到间隔件。
绝缘材料可以耦合在间隔件和至少一个引线框架指之间。
将绝缘材料耦合在间隔件和至少一个引线框架指之间可以包括将绝缘材料耦合到在间隔件的第一表面中的凹槽。
管芯沿着管芯的第一表面的宽度可以大于管芯标记沿着管芯标记的第一表面的宽度。
每个引线框架指可以与管芯标记以间隙宽度隔开,而管芯可以越过每个间隙宽度并且在每个引线框架指之上延伸。
每个引线框架指的近端可以在管芯之下。
形成具有延伸的管芯尺寸的封装的半导体器件的方法的实现方式可以包括:用粘合胶带的粘合剂接触管芯标记;用粘合剂接触多个引线框架指;在间隔件的第一表面处将导电间隔件机械耦合并且电耦合到管芯标记的第一表面;在管芯的第一表面处将管芯机械耦合并且电耦合到间隔件的第二表面,其中管芯沿着管芯的第一表面的宽度大于管芯标记沿着管芯标记的第一表面的宽度;使用至少一个电连接器将管芯的第二表面上的至少一个电接触件与至少一个引线框架指电耦合;分别使用模塑化合物和包封化合物中的一个对管芯、至少一个连接器的至少一部分、间隔件、管芯标记的至少一部分和每个引线框架指的至少一部分进行二次模塑和包封中的一个,以形成封装的半导体器件;以及从粘合剂移除封装的半导体器件。
形成具有延伸的管芯尺寸的封装的半导体器件的方法的实现方式可以包括下列的一个、全部或任意:
所述方法可以包括切单封装的半导体器件。
通过说明书和附图以及权利要求,上述内容和其它方面、特征和优势对本领域一般技术人员而言将是明显的。
此处公开封装的半导体器件的实现方式的一个有益技术效果是使用延伸的或增加的管芯尺寸,而不修改管芯标记的结构和/或不修改引线框架指的结构。
附图说明
图1是使用延伸管芯尺寸的方法和系统形成的封装的半导体器件的正面-底面透视图;
图2是图1的封装的半导体器件的正面-顶面透视图;
图3是沿着线1-1的图2的封装的半导体器件的间隔件的剖面图;
图4是沿着线1-1的图2的封装的半导体器件的间隔件和绝缘材料的剖面图;
图5是粘合胶带和沿着线1-1的图2的封装的半导体器件的多种元件的剖面图;
图6是粘合胶带和沿着线1-1的图2的封装的半导体器件的多种元件的剖面图;
图7是粘合胶带和沿着线1-1的图2的封装的半导体器件的多种元件的剖面图;
图8是粘合胶带和沿着线1-1的图2的封装的半导体器件的剖面图;
图9是沿着线1-1的图2的封装的半导体器件的剖面图;
图10是沿着线1-1的图2的封装的半导体器件的多种元件的剖面分解图;
具体实施方式
在此之后将结合权利要求对实现方式进行说明,其中相似的附图标记表示相似的元件。
本公开,其方面和实现方式不局限于此处公开的具体组件、组装程序或方法要素。本领域已知的与期望的延伸管芯方法尺寸的方法和系统以及并入所述管芯的封装的半导体器件一致的很多额外的组件、组装程序和/或方法要素对用于本公开的特定的实现方式而言将变得明显。因此,例如,尽管公开了特定的实现方式,这样的实现方式和实现组件可以包括本领域已知的用于这样的延伸管芯方法尺寸的方法和系统以及并入所述管芯的封装的半导体器件的任意形状、尺寸、风格、类型、模型、版本、测量、浓度、材料、数量、方法要素、步骤和/或类似物,而实现组件和方法,与想要的操作和方法一致。
定义:如此处所用的:“宽度”指的是当封装的半导体器件位于最低部的位置处的引线框架元件时,封装的半导体器件(或其元件)的剖面图上的水平测量值(诸如图10中所示的水平宽度38和22);“厚度”指的是从相同视角的垂直测量值,以及;“长度”指的是进入页面中(和/或从页面出)的测量值。
现在参照图1、图2和图9,封装的半导体器件(封装)2实现方式被例示为具有延伸的管芯尺寸,并且包括至少一部分并入模塑化合物或包封化合物(化合物)58和/或用模塑化合物或包封化合物58覆盖的若干元件,若干引线框架指6从模塑化合物58暴露出来,而管芯标记18的第二表面24也从模塑化合物58暴露出来。图1、图2和图9的封装2是矩形平面无引线(QFN)封装——在其它实现方式中,其它类型的封装可以包括延伸的管芯尺寸和/或可以使用此处公开的延伸管芯尺寸的方法形成,作为无限制的示例,诸如:双平面无引线(DFN)封装配置、微引线框架(MLP)配置、小外形无引线(SON)配置、小外形集成电路(SOIC)配置、小外形封装(SOP)配置、包括向外延伸越过模塑化合物58的一个或多个表面的配置,诸如翼形引线(与图中所示的版本相反,在图中引线是与模塑化合物58的表面齐平的或基本上齐平的);矩形平面封装(QFP);以及包括引线框架的其它带引线的或无引线的封装类型。
图1是封装2的底面-正面透视图,而图2是图1的封装2的顶面-正面透视图。每个引线框架指6的远端16示出为暴露在封装2的侧表面上,并且每个引线框架指6的部分还示出为暴露在封装2的底表面上。图9是沿着线1-1的图2的封装2的剖面图。图3-8每个例示了延伸管芯尺寸的方法和系统的部分,而图10是沿着线1-1的图9的封装2的元件的几个的剖面分解图。
现在参照图3-5,在延伸管芯尺寸的方法的实现方式中,以及在并入所述管芯的封装的半导体器件中,引线框架4粘合到粘合胶带62的粘合剂。作为无限制的示例,粘合胶带62可以是或可以包括:日本东京的日立化成工业股份有限公司以商标名RTSERIES销售的映射模塑支撑胶带;日本大阪的日东电工公司以商标名PW/TRM系列销售的耐热胶带;以及类似物。在实现方式中,粘合胶带62可以是或可以包括具有低力紫外线(UV)释放粘合剂的厚胶带,使得当要求将粘合胶带62的粘合剂暴露到UV光时,引线框架4可以从粘合胶带62移除。粘合胶带62可以在封装2的形成期间提供并且粘合到引线框架4,并且在使用模塑化合物或包封化合物58完成模塑或包封之后移除。在多个封装2可以形成在相同的粘合胶带62的条带或片上的情况中,单独封装2可以在从粘合胶带62移除之前或之后被锯切或另行切单。也可以包括图中未示出的其它处理步骤,例如,诸如,作为无限制的示例,在切单之前或之后以及在从粘合胶带62移除之前或之后,在封装2的顶平面或上平面上,每个封装2可以被激光标刻。
引线框架4包括管芯标记18和多个引线框架指6。在多个管芯标记18包括在单个引线框架4中的实现方式中,存在与每个管芯标记18相关联的多个引线框架指6。各种实现方式中的管芯标记18当从上方看时具有矩形并且四侧全部被多个引线框架指6包围。每个引线框架指6与管芯标记18以间隙宽度60隔开。现在参照图10,管芯标记18包括第一表面20、第二表面24、沿着第一表面20的宽度22、和多个侧表面26。在图10中示出了两个侧表面26,尽管三维图会显示管芯标记18实际具有四个侧表面26。一个或多个侧表面26可以包括凹陷(凹槽)28,其用作在模塑或包封之后将管芯标记18和/或封装2的其它组件稳固在化合物58内的模塑锁(moldlock)。在图10中示出两个凹陷28,其可以被用作模塑锁,而在实现方式中,管芯标记18的一个、两个、三个或四个侧表面26可以包括凹陷28以形成模塑锁。在其它实现方式中,可能缺少模塑锁,并且在任何侧表面26中可能不存在凹陷28。
现在参照图1、图2、图5和图10,每个引线框架指6具有第一表面8以及一个或多个侧表面10。每个引线框架指6的近端14与管芯标记18以间隙宽度60隔开,而每个引线框架指6的远端16被配置为在模塑或包封之后从化合物58暴露出来以提供在管芯50的电组件与管芯50的其它电组件和/或管芯50外部的元件之间的电通信。在示出的实现方式中,每个引线框架指6的底表面也被配置为在模塑之后为了相似的目的从化合物58暴露出来,尽管在其它实现方式中,根据被配置为容纳并且电耦合以及机械耦合到封装的印刷电路板(PCB)(母板)的元件或位置的设计,可以形成仅暴露远端40的底表面或仅暴露远端40的侧表面等等的封装。
现在参照图10,每个引线框架指6具有近端14处的侧表面10,其中呈现凹陷12以用作模塑锁,在模塑或包封之后将引线框架指6和/或其它组件稳固在化合物58内。在图10中,在每个引线框架指6上示出了一个凹陷12,尽管在实现方式中,三维图可以显示在每个引线框架指6(诸如每个引线框架指在不同的侧表面上)上的一个、两个、三个、四个凹陷12,来为每个引线框架指6提供模塑锁。在其它实现方式中,可以缺少模塑锁,并且在任何侧表面10或引线框架指6的其它表面中可以不存在凹陷12。
凹陷12之上的侧表面10的部分(不包括凹陷12)是突缘(flange),而凹陷28之上的侧表面26的部分(不包括凹陷28)也是突缘。因此,尽管上文将凹陷12、28描述为提供将引线框架指6、管芯标记18和/或整体封装2进行模塑锁的能力,可以等同地说,是突缘提供了这个能力。相似地,如上文所表示的,凹陷12、28可以被包括在每个相应组件的一个、两个、三个或四个侧面上,或者全部不包括,同样地,突缘可以分别被包括在管芯标记18和/或引线框架指6的一个、两个、三个或四个侧面上,或者全部不包括。
在示出的实现方式中,引线框架指6和管芯标记18并入单个引线框架4中。在其它实现方式中,可以在每个封装2的形成期间使用两个或更多引线框架提供管芯标记18和引线框架指6。
如图10中所示,在实现方式中,管芯标记18的第一表面20和每个引线框架指6的第一表面8位于相同的平面中,或者换言之,是共面的。参照图9,在封装2的制造期间以及在制造完成之后,第一表面20和第一表面8在相同的平面中,或者是共面的,在间隔件30之下并且在管芯50之下。在各种实现方式中,第一表面20和每个引线框架指6的第一表面8可以基本上是共面的,尽管不是精确共面的。
在示出的实现方式中,管芯标记18的第一表面20在与管芯标记18的第二表面24相对的管芯标记18的一侧上——第一表面20是上表面或顶表面而第二表面24是底表面或下表面——而每个引线框架指6的第一表面8在与引线框架指6的相对侧上的底表面或下表面相对的上表面或顶表面上。因此,在延伸管芯尺寸的方法和系统中,并且在并入所述管芯的封装中,将引线框架4粘合到粘合胶带62的粘合剂或粘合表面包括:将管芯标记18的第二表面24和每个引线框架指6的底表面粘合到粘合胶带62的粘合剂。包括管芯标记18和引线框架指6的引线框架4可以由金属形成、具有(或不具有)期望的金属涂层和/或可以由常规使用的或者在今后发现的用于创建引线框架的材料构成。
参照图3到图5和图10,在各种实现方式中,提供间隔件30,其包括底表面或下表面上的第一表面32、位于与第一表面32的那侧相对的间隔件30的一侧的上表面或顶表面上的第二表面36以及间隔件30的侧面处的远端40。间隔件30具有沿着第二表面36的宽度38。凹槽34包括在第一表面32中,当间隔件3耦合到管芯标记18时(如图5中所示的)用于将间隔件30与引线框架指6分离,使得间隔件30不与任何引线框架指6进行电通信。如在所例示的实现方式中,绝缘材料42也可以放置在沟槽34中以进一步确保在间隔件30和引线框架指6之间不存在电连接/电耦合/电弧,尽管在其它实现方式中,可能省略全部绝缘材料42并且沟槽34可以足够确保在间隔件30和引线框架指6之间不存在电通信。在包括绝缘材料42的实现方式中,作为无限制的示例,绝缘材料42可以是或者可以包括任何常规地用作晶片背面涂层(WBC)材料的材料和/或德国杜塞尔多夫的汉高两合股份有限公司(在此之后称为“汉高”)以下列商标名销售的下列不导电的管芯贴附粘合剂的一个或多个:ABLESTIKABLECOAT8006NS或LOCTITEABLESTIKABLECOAT8006NS(WBC);ABLEBOND2025DSI;ABLEBOND8900NC;HYSOLQM1547;HYSOLQM1536HT;HYSOLQM1536NB;ABLECOAT8008NC(WBC),和/或ABLESTIKABP-8910T。绝缘材料42可以具有任何性质,并且可以使用附录A中公开的技术施加,所述附录A据此通过引用完全并入此处。
尽管图中的剖面图将间隔件30示出为看上去具有两个沟槽34,所示实现方式的三维图将揭示间隔件30当从底面看时具有矩形、基本上矩形、正方形、基本上正方形的形状,并且沟槽34是因此沿着间隔件30的矩形或正方形的四个边中的每个边的并因此形成一个具有矩形或正方形形状的连续沟槽。间隔件30由导电材料(诸如金属或金属合金)形成,并且将管芯50与管芯标记18电耦合。如图中所示,在封装2内管芯50仅经由或通过间隔件30电耦合到管芯标记18。
间隔件30的第一表面32机械耦合并且电耦合到管芯标记18的第一表面20。在示出的实现方式中,这用导电粘合剂44完成。在其它实现方式中,可以使用其它机理,诸如用焊膏焊接。在使用导电粘合剂44的实现方式中,作为无限制的示例,导电粘合剂44可以是或者可以包括汉高以下列商标名销售的一种或多种粘合剂:ABLEBONDFS849-TI;ABLECOAT8008HT(WBC);ABLETHERM2600AT,ABLEBOND84-1LMISR4;ABLEBOND84-1LMISR8;ABLEBOND3230;ABLESTIK8008MD(WBC);ABLEBOND8200C;ABLEBOND8200TI;ABLEBOND8290;ABLEBOND8352L;HYSOLQMI519;HYSOLQMI529HT-LV,和/或;HYSOLQMI529HT。在使用焊膏或焊料的实现方式中,作为无限制的示例,焊料可以是或者可以包括汉高以下列商标名销售的下列焊料一种或多种:MULTICOREDA100,和/或;MULTICOREDA101。
现在参照图3-5,绝缘材料42可以使得其底平面与第一平面32齐平或基本上齐平。导电粘合剂44可以按照一种方式在间隔件30和管芯标记18之间干燥、固化或凝固,所述方式提供这些元件之间的厚度使得绝缘材料42不物理地接触引线框架指6,如图5中所例示。在其它实现方式中,导电粘合剂44可以提供管芯标记18和间隔件30之间的可忽略的厚度,使得当间隔件30耦合到管芯标记18时,绝缘材料42物理地接触引线框架指6。
从图5,可以看到在实现方式中,间隔件30位于引线框架指6上或之上,而相应地,引线框架指6在间隔件30之下。此处使用的“上”或“之上”分别定义为直接地上或直接地之上,尽管不一定触碰到。此处使用的“下”或“之下”分别定义为直接地下或直接地之下,尽管不一定触碰到。例如,为了本公开的目的,尽管位于比引线框架指6的第一表面8高的地方,导电粘合剂44不在引线框架指6“上”或“之上”。相似地,引线框架指6的近端14在绝缘材料42“下”或“之下”、在间隔件30“下”或“之下”、在沟槽34“下”或“之下”、在导电粘合剂46“下”或“之下”并且在管芯50“下”或“之下”,但是不在导电粘合剂44“下”或“之下”。
参照图5和图10,在示出的实现方式中的间隔件30具有沿着其第二表面36的宽度38,所述宽度38大于管芯标记18沿着管芯标记18的第一表面20的宽度22。也可以看到,在示出的实现方式中,宽度38大于宽度22加上两个间隙宽度60的和,并因此间隔件30延伸越过间隙宽度60并且在引线框架指6上或之上。在其它实现方式中,宽度38可以比宽度22宽但是不比宽度22加上两个间隙宽度60宽,并且在这样的实现方式中,间隔件30可以延伸在每个间隙宽度60的一部分上但是不越过整个间隙宽度60,并因此不在引线框架指6上或之上。在特定实现方式中的宽度38一般会是比从一个引线框架指6的远端16到相对的引线框架指6的远端16测得的宽度小的某量,使得第一表面8的一些部分暴露以容纳电连接器48(参照图7)来将管芯50的电组件与引线框架指6电耦合。然而,在其它实现方式中,宽度38可以与从引线框架指6的远端16测得的宽度相同或比其更大,取决于封装类型。
现在参照图5、图6和图10,管芯50的第一表面52电耦合或机械耦合到间隔件30的第二表面36。在实现方式中,这通过导电粘合剂46完成,尽管在其它实现方式中,这可以通过其它机理完成,诸如通过用焊膏焊接。导电粘合剂46可以是或者可以包括与导电粘合剂44相同或相似的材料。导电粘合剂46可以是或者可以包括任何已知的或在今后发现的管芯贴附粘合剂,包括任何传导环氧树脂或弹性体,包括本文件中公开的那些中的任何粘合剂。在示出的实现方式中,制定管芯50的尺寸使得其边在每个边上延伸到与间隔件30的远端40一样远。换言之,管芯50沿着管芯50的第二表面56的宽度54在图中与间隔件30的宽度38是相等的。在其它实现方式中,宽度54可以比宽度38更大或更小。
如可以从图5、图6和图10所见,在示出的实现方式中,管芯50沿着第二表面56的宽度54比管芯标记18沿着管芯标记18的第一表面20的宽度22大。还可以看到,在示出的实现方式中,宽度54比宽度22加上两个间隙宽度60的和大,并因此管芯50延伸越过间隙宽度60并且在引线框架指6之上或上。在其它实现方式中,宽度54可以比宽度22宽,但不比宽度22加上两个间隙宽度60宽,而在这样的实现方式中,管芯50可以延伸在每个间隙宽度60的一部分上,但不越过它,并因此,不在引线框架指6上或之上。在特定实现方式中,宽度54一般会是比从一个引线框架指6的远端16到相对的引线框架指6的远端16测得的宽度小的某量,使得第一表面8有一部分暴露以容纳电连接器48(参照图7)以将管芯50的电组件与引线框架指6电耦合。然而,在特定封装实现方式中,宽度可以是相同的或者更大。
现在参照图7,一旦管芯50已被稳固到间隔件30,电连接器48被用于将管芯50的第二表面56上的电接触件与引线框架指6耦合。在示出的实现方式中,电连接器48是焊线,尽管在其它实现方式中,它们可以是传导夹或一些其它电连接器。作为无限制的示例,管芯50的第二表面56上的电接触件可以是凸点(bump)、接合焊盘(bondpad)等等。
现在参照图8,一旦全部必需的电连接器48到位,封装2可以通过使用模塑化合物或包封化合物58对各种组件进行模塑或包封来完成。从图8可以看到,模塑化合物或包封化合物58覆盖或包封管芯50、间隔件30、绝缘材料42(如果存在的话)、导电粘合剂44、46以及引线框架指6和管芯标记18的至少一部分。模塑化合物或包封化合物58填入管芯标记18和引线框架指6之间的间隔或空间中,诸如填入突缘下面的凹陷12、28中,使得当模塑或包封材料干燥或另行固化或凝固的时候,封装2包括模塑锁以帮助保持封装2内的各种元件。
模塑化合物或包封化合物58可以是或可以包括日本东京的住友酚醛塑料株式会社(在此之后称为“住友”)以商标名G760SERIES销售的环氧树脂。模塑化合物或包封化合物58可以是或可以包括汉高以下列商标名销售的一种或多种环氧树脂:HYSOLGR828D;HYSOLGR869;HYSOLKL-G730;HYSOLKL-7000HA;HYSOLKL-G900HC;HYSOLKL-G900HP;HYSOLGR725LV-LS;HYSOLKL-G450H;HYSOLKL-4500-1NT,和/或;HYSOLGR9810系列。模塑或包封过程可以使用诸如应用液体形式的化合物58并然后固化、干燥或凝固化合物58的方法,并且可以包括用点胶机(dispendingmachine)的喷嘴将化合物58分配到模具中或者经由注射模塑的方式用化合物58填充模腔。
现在参照图8和图9,一旦模塑化合物或包封化合物58已经凝固,封装2可以从粘合胶带62移除。如上文所讨论的,如果多个封装2耦合到同一片粘合胶带62,那么通过锯切或其它技术的切单可以发生在从粘合胶带62移除封装2之前或之后,且另外,可以使用激光标刻或另一种标刻技术在切单之前或之后以及从粘合胶带62移除封装2之前或之后将封装2标刻。
在各种实现方式中,作为无限制的示例,上文提到的处理步骤的一个或多个可以使用拾取与放置工具执行,诸如:将间隔件30的第一表面32耦合到管芯标记18的第一表面20,以及将管芯50的第一表面52耦合到将间隔件30的第二表面36。
尽管图仅示出其中具有单个管芯50的封装2的示例,在实现方式中,可以使用所述方法或者可以包括额外的方法以形成多芯片封装(多管芯封装),或者形成堆叠的管芯封装等等,其中多于一个管芯50固定在间隔件30上和/或每个封装其中存在多个管芯标记18和/或多个间隔件30。
此处公开的延伸管芯尺寸的方法和系统以及并入所述管芯的封装的半导体器件的实现方式的一个基本和新颖特性是使用延伸的或增加的管芯尺寸,其具有比管芯标记的最大宽度更大的最大宽度,而不修改管芯标记的结构和/或不修改引线框架指的结构,并同时将管芯标记的顶平面和引线框架指的顶平面保持在相同的平面(或者基本上相同的平面)。此处公开的延伸管芯尺寸的方法和系统以及并入所述管芯的封装的半导体器件的实现方式的一个基本和新颖特性是,在不修改先前版本的封装中使用的常规的引线框架的情况下,在特定的封装中或封装组中增加管芯尺寸的能力。
在实现方式中,在封装的半导体器件内延伸管芯尺寸的方法包括:在间隔件的第一表面处将间隔件机械耦合并且电耦合到管芯标记的第一表面,所述管芯标记由多个引线框架指包围,其中每个引线框架指的近端与管芯标记隔开;在管芯的第一表面处将管芯机械耦合并且电耦合到间隔件的第二表面;以及分别使用模塑化合物和包封化合物中的一个对所述管芯、所述间隔件、所述管芯标记的至少一部分和每个引线框架指的至少一部分进行二次模塑和包封中的一个;其中所述间隔件沿着所述间隔件的所述第二表面的宽度比所述管芯标记沿着所述管芯标记的所述第一表面的宽度大。
在实现方式中,每个引线框架指与管芯标记以间隙宽度隔开,而间隔件越过每个间隙宽度并且在每个引线框架指上延伸。
在实现方式中,每个引线框架指的近端在间隔件之下。
在实现方式中,管芯标记的第一表面和每个引线框架指的第一表面基本上是共面的。
在实现方式中,使用导电粘合剂将管芯电耦合并且机械耦合到间隔件。
在实现方式中,上文所述的方法还包括将绝缘材料耦合在所述间隔件和至少一个引线框架指之间。
在实现方式中,将绝缘材料耦合在所述间隔件和引线框架指的至少一个之间还包括将绝缘材料耦合到间隔件的第一表面中的凹槽。
在实现方式中,所述管芯沿着所述管芯的所述第一表面的宽度比所述管芯标记沿着所述管芯标记的所述第一表面的宽度大。
在实现方式中,其中每个引线框架指与所述管芯标记以间隙宽度隔开,而所述管芯越过每个间隙宽度并且在每个引线框架指之上延伸。
在实现方式中,其中每个引线框架指的所述近端在所述管芯之下。
在实现方式中,形成具有延伸的管芯尺寸的封装的半导体器件的方法包括:用粘合胶带的粘合剂接触管芯标记;用粘合剂接触多个引线框架指;在间隔件的第一表面处将导电间隔件机械耦合并且电耦合到所述管芯标记的第一表面;在管芯的第一表面处将管芯机械耦合并且电耦合到所述间隔件的第二表面,其中所述管芯沿着所述管芯的所述第一表面的宽度比所述管芯标记沿着所述管芯标记的所述第一表面的宽度大;使用至少一个电连接器将所述管芯的第二表面上的至少一个电接触件与至少一个引线框架指电耦合;分别使用模塑化合物和包封化合物中的一个对所述管芯、所述至少一个电连接器的至少一部分、所述间隔件、所述管芯标记的至少一部分和每个引线框架指的至少一部分进行二次模塑和包封中的一个,以形成封装的半导体器件;以及从所述粘合剂移除所述封装的半导体器件。
在实现方式中,上文所述方法包括切单封装的半导体器件。
在上文说明指的是延伸管芯尺寸的方法和系统以及实现组件、子组件、方法和子方法的具体实现方式之处,应很明显的是,可以在不背离其精神的条件下做出若干修改,而且这些实现组件、子组件、方法和子方法的实现方式可以应用到延伸管芯尺寸的其它方法和系统。
Claims (10)
1.一种封装的半导体器件,其特征在于包括:
管芯标记和多个引线框架指,每个引线框架指的近端与所述管芯标记隔开;
间隔件,在所述间隔件的第一表面处机械耦合并且电耦合到所述管芯标记的第一表面;
管芯,在所述管芯的第一表面处机械耦合并且电耦合到所述间隔件的第二表面;
至少一个电连接器,将所述管芯的第二表面上的至少一个电接触件与至少一个所述引线框架指电耦合;以及
模塑化合物,对所述管芯、所述间隔件、所述至少一个电连接器的至少一部分、所述管芯标记的至少一部分和每个所述引线框架指的至少一部分进行包封;
其中所述间隔件沿着所述间隔件的所述第二表面的宽度比所述管芯标记沿着所述管芯标记的所述第一表面的宽度大。
2.根据权利要求1所述的封装的半导体器件,其特征在于,所述管芯标记的所述第一表面在与所述管芯标记的第二表面相对的所述管芯标记的一侧上,所述间隔件的所述第一表面在与所述间隔件的所述第二表面相对的所述间隔件的一侧上,以及所述管芯的所述第一表面在与所述管芯的所述第二表面相对的所述管芯的一侧上。
3.根据权利要求1所述的封装的半导体器件,其特征在于,每个引线框架指与所述管芯标记以间隙宽度隔开,并且其中所述间隔件越过每个间隙宽度并且在每个引线框架指之上延伸。
4.根据权利要求1所述的封装的半导体器件,其特征在于,每个引线框架指的所述近端在所述间隔件之下。
5.根据权利要求1所述的封装的半导体器件,其特征在于,所述管芯标记的所述第一表面和每个所述引线框架指的第一表面基本上是共面的。
6.根据权利要求5所述的封装的半导体器件,其特征在于,所述管芯标记的所述第一表面和每个所述引线框架指的所述第一表面基本上是在间隔件之下共面的。
7.根据权利要求1所述的封装的半导体器件,其特征在于,所述间隔件包括被配置为容纳绝缘材料的至少一个凹槽。
8.根据权利要求7所述的封装的半导体器件,其特征在于,还包括耦合到在所述间隔件和至少一个所述引线框架指之间的所述至少一个凹槽的所述绝缘材料。
9.根据权利要求1所述的封装的半导体器件,其特征在于,所述管芯使用导电粘合剂电耦合并且机械耦合到所述间隔件。
10.根据权利要求1所述的封装的半导体器件,其特征在于,所述管芯沿着所述管芯的所述第一表面的宽度比所述管芯标记沿着所述管芯标记的所述第一表面的宽度大。
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