CN204991725U - Brilliant silicon solar cell back electrode - Google Patents

Brilliant silicon solar cell back electrode Download PDF

Info

Publication number
CN204991725U
CN204991725U CN201520722010.6U CN201520722010U CN204991725U CN 204991725 U CN204991725 U CN 204991725U CN 201520722010 U CN201520722010 U CN 201520722010U CN 204991725 U CN204991725 U CN 204991725U
Authority
CN
China
Prior art keywords
back electrode
silicon solar
electric field
described back
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201520722010.6U
Other languages
Chinese (zh)
Inventor
黃玉平
秦崇德
方结彬
石强
何达能
陈刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Original Assignee
Guangdong Aiko Solar Energy Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Aiko Solar Energy Technology Co Ltd filed Critical Guangdong Aiko Solar Energy Technology Co Ltd
Priority to CN201520722010.6U priority Critical patent/CN204991725U/en
Application granted granted Critical
Publication of CN204991725U publication Critical patent/CN204991725U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Abstract

The utility model discloses a brilliant silicon solar cell back electrode, including back of the body electric field, one side of back of the body electric field is even inlays three back electrodes, the back electrode is close to the battery edge and is parallel to each other, back of the body electrode length is 30 -60mm, the minor face distance of back electrode the distance at battery edge is 1.1 -3mm. Through the area that changes the back electrode to the quantity of reduction back of the body silver has been saved the subassembly and has been welded the belt length degree, thereby has improved the passivation effect of aluminium back of the body field, promotes brilliant silicon solar cell's photoelectric conversion efficiency, the utility model discloses reform transform simply, the cost of manufacture of battery piece is low, and is applicable in a large amount of popularizations.

Description

A kind of crystal silicon solar batteries backplate
Technical field
The utility model relates to technical field of solar batteries, particularly relates to a kind of crystal silicon solar batteries backplate.
Background technology
Solar cell is that one absorbs solar radiant energy effectively, utilizes photovoltaic effect that transform light energy is become the device of electric energy.In the manufacturing process of crystal-silicon solar cell, comprising: making herbs into wool, diffusion, etching, PECVD, silk screen printing, sintering, testing, sorting, in this several roads technological process, silkscreen process is divided into the printing of back electrode, back of the body electric field and positive electrode.Back electrode printing refers at cell backside printing silver slurry, forms back electrode, be used for collecting and conduction current after oven dry; The printing of aluminium back surface field refers in the region printing aluminium paste formation aluminium back surface field of cell backside except back electrode.The effect of aluminium back surface field mainly contains: after forming alusil alloy with silicon, play the effect of gettering; Produce heavily doped P-type layer at cell backside, form height knot; Collect, conduction current is to back electrode.
As shown in Figure 1, it is three that the back electrode of prior art is uniformly distributed in back of the body electric field, and every bar back electrode is parallel and to be uniformly distributed be three sections.Because back electrode area is larger, back of the body field area just reduces, and therefore not only wastes Ag like this, also weakens the passivation effect of silicon chip.So reduce back electrode area, increase back of the body field area becomes the problem that researcher needs to solve.
Summary of the invention
In view of this, the utility model provides a kind of crystal silicon solar batteries backplate, large to solve current silver-colored consumption, thus causes the passivation effect weakening silicon chip, the technical problem that photoelectric conversion efficiency is low.There is a basic understanding some aspects in order to the embodiment to disclosure, shown below is simple summary.This summarized section is not extensive overview, neither determine key/critical component or describe the protection range of these embodiments.Its sole purpose presents some concepts by simple form, in this, as the preamble of following detailed description.
The technical solution adopted in the utility model:
In some optional embodiments, a kind of crystal silicon solar batteries backplate is provided, comprise back of the body electric field, the side of described back of the body electric field inlays three back electrodes uniformly, described back electrode is near battery edge and be parallel to each other, described back electrode length is 30-60mm, and the minor face of described back electrode is 1.1-3mm apart from the distance of described battery edge.
In some optional embodiments, the spacing of described back of the body Electric field edge and described battery edge is 0.5-1mm.
In some optional embodiments, the minor face of described back electrode, apart from the distance of described battery edge, is described back of the body Electric field edge apart from 1.1 times to 6 times of distance of described battery edge.
In some optional embodiments, the silver-colored mass fraction of described back electrode is 60%-70%.
In some optional embodiments, the aluminium mass fraction of described back of the body electric field is 60%-85%.
In some optional embodiments, described back electrode width is 2.0-2.5mm.
The beneficial effect that the utility model brings: by changing the area of back electrode, to reduce the consumption of back of the body silver, save assembly welding length, thus improve the passivation effect of aluminium back surface field, promote the photoelectric conversion efficiency of crystal silicon solar batteries; The utility model transformation is simple, and the cost of manufacture of cell piece is low, is applicable to large-scale popularization.
Accompanying drawing explanation
Fig. 1 is the structural representation of prior art crystal silicon solar batteries backplate;
Fig. 2 is the structural representation of crystal silicon solar batteries backplate of the present utility model.
Embodiment
The following description and drawings illustrate specific embodiment of the invention scheme fully, to enable those skilled in the art to put into practice them.Other embodiments can comprise structure, logic, electric, process and other change.Embodiment only represents possible change.Unless explicitly requested, otherwise independent parts and function are optional, and the order of operation can change.The part of some embodiments and feature can be included in or replace part and the feature of other embodiments.The scope of embodiment of the present invention comprises the gamut of claims, and all obtainable equivalent of claims.
As shown in Figure 2, in some illustrative embodiments, provide a kind of crystal silicon solar batteries backplate, comprise back of the body electric field 1 and back electrode 2.The quantity of described back electrode 2 is three, and described back electrode 2 is embedded in the side of described back of the body electric field 1 uniformly, near battery edge.Article three, described back electrode 2 is parallel to each other, and the minor face of described back electrode 2 is 1.1-3mm apart from the distance of described battery edge.
Back electrode 2 is larger from battery edge spacing, and the probability of edge current leakage will be less, and parallel resistance is higher, if back electrode 2 is too large from battery edge spacing, reduces the passivation area of back of the body electric field 1 aluminium paste, the factor such as efficiency can be caused on the low side.
In some illustrative embodiments, the spacing between described back of the body electric field 1 edge and described battery edge is 0.5-1mm.In some illustrative embodiments, the minor face of described back electrode, apart from the distance of described battery edge, is described back of the body Electric field edge apart from 1.1 times to 6 times of distance of described battery edge.
In some illustrative embodiments, the silver-colored mass fraction of described back electrode 2 is 60%-70%.Owing to needing after back electrode 2 shortening to ensure that pulling force is qualified, after sintering, back electrode 2 silver medal mass fraction both can ensure within 60%-70% that pulling force was qualified, can ensure that again electric conductivity is compensated on traditional back electrode.Compared with traditional back electrode, after traditional back electrode sintering, silver-colored mass fraction is about 55%, and after the utility model back electrode sintering, silver-colored mass fraction is within 60%-70%, ensures that pulling force is qualified.
In some illustrative embodiments, the aluminium mass fraction of described back of the body electric field 1 is 60%-85%.
In some illustrative embodiments, described back electrode 2 width is 2.0-2.5mm.Back electrode 2 length is longer, and width is wider, higher for silver slurry cost, more stable for welding pulling force, also save the welding that components welding uses, reduce cost, and back electrode shortens, conduction rate is faster, so that reduce the loss of electric current, so that improved efficiency.
Above-described embodiment is the utility model preferably execution mode; but execution mode of the present utility model is not restricted to the described embodiments; other are any do not deviate from Spirit Essence of the present utility model and principle under the change made; modify; substitute, combination, simplify; all should be the substitute mode of equivalence, all should be included in protection range of the present utility model.

Claims (6)

1. a crystal silicon solar batteries backplate, it is characterized in that, comprise back of the body electric field, the side of described back of the body electric field inlays three back electrodes uniformly, described back electrode is near battery edge and be parallel to each other, described back electrode length is 30-60mm, and the minor face of described back electrode is 1.1-3mm apart from the distance of described battery edge.
2. a kind of crystal silicon solar batteries backplate according to claim 1, is characterized in that, the spacing of described back of the body Electric field edge and described battery edge is 0.5-1mm.
3. a kind of crystal silicon solar batteries backplate according to claim 1, is characterized in that, the minor face of described back electrode, apart from the distance of described battery edge, is described back of the body Electric field edge apart from 1.1 times to 6 times of distance of described battery edge.
4. a kind of crystal silicon solar batteries backplate according to claim 1, is characterized in that, the silver-colored mass fraction of described back electrode is 60%-70%.
5. a kind of crystal silicon solar batteries backplate according to claim 1, is characterized in that, the aluminium mass fraction of described back of the body electric field is 60%-85%.
6. a kind of crystal silicon solar batteries backplate according to claim 1, is characterized in that, described back electrode width is 2.0-2.5mm.
CN201520722010.6U 2015-09-17 2015-09-17 Brilliant silicon solar cell back electrode Active CN204991725U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520722010.6U CN204991725U (en) 2015-09-17 2015-09-17 Brilliant silicon solar cell back electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520722010.6U CN204991725U (en) 2015-09-17 2015-09-17 Brilliant silicon solar cell back electrode

Publications (1)

Publication Number Publication Date
CN204991725U true CN204991725U (en) 2016-01-20

Family

ID=55126060

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520722010.6U Active CN204991725U (en) 2015-09-17 2015-09-17 Brilliant silicon solar cell back electrode

Country Status (1)

Country Link
CN (1) CN204991725U (en)

Similar Documents

Publication Publication Date Title
CN201838602U (en) Crystalline silicon solar battery with segmented grid lines
CN102779861B (en) Electrode structure with grid lines on front surface
CN103029423B (en) Solar battery sheet and printing screen thereof
CN203423193U (en) MWT solar cell
CN205985031U (en) High -efficient solar energy does not have main grid line crystal silicon battery piece
CN102738302A (en) Method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell
CN201966217U (en) Crystalline silicon solar cell back electrode
CN203932078U (en) A kind of back of the body passivation solar cell
CN203617305U (en) Grid line structure of solar cell
CN203250754U (en) Front grid line of solar cell and solar cell
CN105702755B (en) A kind of front electrode of crystal silicon solar batteries
CN103545386A (en) Solar cell electrode shape
CN204991725U (en) Brilliant silicon solar cell back electrode
CN103296099A (en) Rear surface passivation point contact photovoltaic battery and production method thereof
CN203055923U (en) Solar cell front face grid line and solar cell sheet printed with same
CN203085565U (en) Novel solar battery positive electrode
CN107146822B (en) Solar cell capable of being connected at will without broken grid
CN205621744U (en) Solar cell assembly
CN101388421A (en) Using method of solar cell phosphorus pulp
CN207165582U (en) Eight sectional back electrode monocrystaline silicon solar cells
CN104282772A (en) Positive electrode solar crystalline silicon battery with four main grid lines
CN202183381U (en) Cell plate for solar cell pack with low shading area and high current collection
CN201349006Y (en) Selective emitter solar cell
CN102916076A (en) Pattern design for front electrode used for solar battery
CN201608193U (en) Back electrode of crystalline silicon solar cell

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20180102

Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right