CN204966479U - 一种射频芯片及其无源器件的封装结构 - Google Patents

一种射频芯片及其无源器件的封装结构 Download PDF

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CN204966479U
CN204966479U CN201520792914.6U CN201520792914U CN204966479U CN 204966479 U CN204966479 U CN 204966479U CN 201520792914 U CN201520792914 U CN 201520792914U CN 204966479 U CN204966479 U CN 204966479U
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radio frequency
frequency chip
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encapsulating structure
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王波
马强
杨静
段宗明
唐亮
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Abstract

本实用新型提供一种射频芯片及其无源器件的封装结构，包括塑封体(4)以及RDL再布线层(5)，所述RDL再布线层(5)设置在塑封体(4)的表面，射频芯片(1)及无源器件(2)塑封在塑封体(4)内。本实用新型还提供一种上述封装结构的封装方法。本实用新型的优点在于：通过本实用新型，能够将一个或多个射频芯片以及相关的分立器件集成于一个塑封体中，制成一个具有系统级功能的单塑封体。并且消除现有封装技术所带来的寄生效应。

Description

一种射频芯片及其无源器件的封装结构
技术领域
本实用新型涉及射频微系统封装领域，具体是指一种基于嵌入式晶圆级封装的射频传输结构。
背景技术
系统级封装在微系统技术领域是一个全新的封装概念，是指通过对数字信号、射频、光学、MEMS的协同设计和制造，将多芯片和分立器件等集成于一个单塑封体中，并使该单塑封体具备系统级的功能。
T/R收发组件是相控阵雷达中的射频微系统，其射频模块的封装方法一般采用引线键合将微波射频芯片与LTCC或微波介质板上的射频电路连接，而分立器件(如去耦电容、电感或电阻)则通过SMT表面贴装工艺焊接到LTCC或微波介质板上。由于涉及引线键合和SMT表面贴装两个不同的连接方法，导致组装工序复杂，对T/R组件的加工效率和成品率带来了不利的影响。另外，封装会给射频信号带来损耗，例如，在QFN、BGA或FC封装中，射频信号需要通过键合丝、引线框架或封装基板进行传输。射频信号从塑封体内部传输至塑封体外部的距离较长，会带来阻抗匹配的设计难题和较高的寄生效应，难以实现最优化的封装设计，这些都给射频信号完整性带来负面影响，在较高射频频率时尤为严重。
公开号为CN101567351A和CN102236820A的专利公开了一种微型射频模块及其封装方法，它对射频芯片和负载电容采用QFN封装结构，通过键合丝将芯片与QFN内引脚互连。但键合丝具有较高的寄生效应，以及难以进行较好的阻抗匹配设计，尤其在高频率下，对一些寄生敏感的射频芯片，可能会产生较高的损耗。
实用新型内容
本实用新型提出一种基于嵌入式晶圆级封装的射频芯片封装结构，解决了上述难以进行较好的阻抗匹配设计以及由于寄生效应产生较高的损耗的问题。
嵌入式晶圆级封装(EmbeddedWaferLevelPackage)是在扇出型晶圆级封装(Fan-outWaferLevelPackage)的基础上发展而成的一种新封装形式。嵌入式晶圆级封装具有较高的集成度和灵活度，它不仅可以封装芯片，还可以将芯片周边的分立器件一起进行封装集成，从而获得一个具有系统级功能的单塑封体。
嵌入式晶圆级封装的优点是可以通过再布线技术(Redistributionlines,RDL)在同一平面上，实现射频芯片之间或与无源器件之间的射频信号传输、互连或芯片端口的重新分布，而无需通过传统封装所采用的引线键合或封装基板作为传输中介。因此，RDL再布线技术可以消除引线键合或封装基板所带来的寄生效应，而且可以通过设计阻抗匹配的射频信号传输结构，进一步降低射频信号的损耗。
本实用新型是采用以下技术手段解决上述技术问题的：一种射频芯片及其无源器件的封装结构，包括塑封体(4)以及RDL再布线层(5)，所述RDL再布线层(5)设置在塑封体(4)的表面，射频芯片(1)及无源器件(2)塑封在塑封体(4)内。
作为进一步具体的技术方案，所述RDL再布线层(5)由高分子聚合物(52)和金属化层(54)所构成，高分子聚合物(52)覆盖在整个塑封体(4)的表面，金属化层(54)被包裹在高分子聚合物(52)内，金属化层(54)连接射频芯片(1)及无源器件(2)的端口和外部电路。
作为进一步具体的技术方案，金属化层(54)包含金属化图层(542)、金属化通孔(544)，以及BGA焊盘(546)，金属化图层(542)之间采用金属化通孔(544)进行连接，距离射频芯片(1)最近的金属化图层(542)通过金属化通孔(544)连接射频芯片(1)的端口，该距离射频芯片(1)最近的金属化图层(542)同时通过金属化通孔(544)连接到其他无源器件(2)的端口，距离高分子聚合物(52)外表面最近的金属化图层(542)通过金属化通孔(544)连接BGA焊盘(546)，BGA焊盘(546)分布在RDL再布线层(5)的表层，所述BGA焊盘(546)与外围电路通过BGA焊球互连。
作为进一步具体的技术方案，所述金属化图层(542)为2～3层。
作为进一步具体的技术方案，每层金属化图层(542)厚度为5～8μm。
作为进一步具体的技术方案，所述金属化通孔(544)高度为10～15μm。
作为进一步具体的技术方案，射频芯片(1)的中间连接射频信号线(8)，射频芯片(1)的两端连接接地面(9)，射频信号线(8)的外端连接射频焊盘(80)，接地面(9)的外端连接接地焊盘(90)，射频信号线(8)和射频焊盘(80)构成一组金属化层，接地面(9)和接地焊盘(90)构成一组金属化层，射频焊盘(80)外有射频焊球(82)，接地面(9)外有接地焊球(92)。
作为进一步具体的技术方案，射频芯片(1)之间或射频芯片(1)与无源器件(1’)之间通过射频信号线(8)与接地面(9)进行互连。
本实用新型的优点在于：通过本实用新型，能够将一个或多个射频芯片以及相关的分立器件集成于一个塑封体中，制成一个具有系统级功能的单塑封体。并且消除现有封装技术所带来的寄生效应，且可以通过设计阻抗匹配的射频信号传输结构，进一步降低射频信号的损耗。
本实用新型所涉及的射频传输结构设计不仅限于相控阵雷达T/R收发组件中微波射频芯片的封装，还可以应用到移动通讯产品、通讯基站、汽车雷达等射频收发芯片的系统级封装中。
附图说明
图1是本实用新型的实施例中晶圆状的图形重构示意图。
图2是本实用新型的实施例中晶圆状塑封体示意图。
图3是本实用新型的实施例中RDL再布线示意图。
图4是本实用新型的实施例中塑封体切割示意图。
图5是本实用新型的实施例中RDL层结构横截面示意图。
图6是本实用新型的实施例中RF端口垂直传输结构示意图。
图7是本实用新型的实施例中RF端口水平共面传输结构的横截面示意图。
图8是本实用新型的实施例中RF端口水平共面传输结构的射频芯片与外部电路BGA连接的俯视图。
图9是射频芯片之间或与无源器件之间的共面传输结构俯视示意图。
具体实施方式
以下结合附图对本实用新型进行详细的描述。
请参阅图1至图4，为了解决射频芯片，尤其是高频段下的射频芯片的系统级封装难题，本实用新型提出一种具有扇出型结构的无源器件嵌入式晶圆级封装结构，这里将以一个加工案例来阐述该封装结构的实施步骤：
1)通过芯片拾取设备，将射频芯片1及其无源器件2按照封装电路设计，以面朝下的方式，精确地粘接于覆有黏结胶带的载台3上，并在载台3上重构成一个晶圆形状，获得的结构如图1所示；
2)将载台3上的所有射频芯片1及其无源器件2进行塑封。塑封的材料可以采用液态塑封料或环氧薄膜两种方式。液态塑封料可以通过注塑方式注入一个塑封模型中，并在120℃保温固化1.5小时左右。若采用环氧塑封薄膜，则是通过150℃热压工艺实现，在150℃温度下，环氧薄膜具有粘塑性特征，可以将芯片或器件包覆其中。最终获得的结构如图2所示。
3)塑封完成后，通过紫外光照，将晶圆状塑封体4从黏结胶带上解粘接，并进行清洗。翻转塑封体，使塑封体正面朝上，通过黏结胶带使塑封体正面朝上粘结于载台3上，通过磁控溅射、掩模光刻和精密电镀等工艺方法，在塑封体4表面加工出RDL再布线层5，使射频芯片1或其他无源器件2的端口互连或重新分布。获得结构如图3所示。
如图5所示，所述RDL再布线层5由光敏性的高分子聚合物52和金属化层54所构成。高分子聚合物52覆盖在整个塑封体4的表面，金属化层54被包裹在高分子聚合物52内，金属化层54包含金属化图层542、金属化通孔544，以及BGA焊盘546，所述金属化图层542为2～3层的5～8μm厚度的铜金属化图层，图层之间则采用高度约为10～15μm金属化通孔544进行连接，金属化通孔544的孔径则根据需要进行设计。距离射频芯片1最近的金属化图层542通过金属化通孔544连接射频芯片1的端口，该距离射频芯片1最近的金属化图层542同时通过金属化通孔544连接到其他无源器件2的端口，从而使射频芯片1或其他无源器件2的端口互连，距离高分子聚合物52外表面最近的金属化图层542通过金属化通孔544连接BGA焊盘546，BGA焊盘546分布在RDL再布线层5的表层。所述BGA焊盘546用于与外围电路通过BGA焊球互连。
所述高分子聚合物52可以选择光敏PI或BCB等高分子材料，PI或BCB等聚合物不仅作为光刻胶用于光刻，而且固化后还作为金属化层54的支撑介质材料。
4)完成RDL再布线工艺之后，采用硅片切割机，对晶圆级塑封体4进行切割，最终完成嵌入式晶圆级封装。获得结构如图4所示，该封装结构包括塑封体4以及RDL再布线层5，所述RDL再布线层5设置在塑封体4的表面。
该封装结构用于射频信号传输的两种线路设计如下所述。
1)RF端口垂直传输结构：
如图6所示，若封装结构中只有射频芯片1，则射频芯片1的RF端口12与封装结构外部电路之间的射频信号传输，通过RDL再布线层5的金属化通孔544达到RDL再布线层5表面的BGA焊盘546，通过BGA焊盘546和焊球100传输到外部电路。这种结构的传输距离最短，可以有效降低传输损耗。
2)RF端口水平传输结构:
而在一些封装中，射频信号需要与其他元器件进行传输和互连，此时，则需要在RDL再布线层5中设计CPW共面波导进行射频信号的传输，即需要如上所述的金属化图层542，金属化图层542之间采用金属化通孔544进行连接，射频芯片之间或射频芯片与无源器件之间通过金属化图层542实现共面互连。
如图7和图8所示，射频芯片1的中间连接CPW的射频信号线8，射频芯片1的两端连接CPW的接地面9，为了提高信号完整性，需要通过调整射频信号线8与接地面9的间距S来调节CPW共面波导的特征阻抗，使之与射频芯片1的射频端口的阻抗相匹配。射频信号线8的外端连接射频焊盘80，接地面9的外端连接接地焊盘90。射频信号线8和射频焊盘80构成一组金属化层，接地面9和接地焊盘90构成一组金属化层。射频焊盘80外有射频焊球82，接地面9外有接地焊球92。
如图9所示，射频芯片1之间或射频芯片1与无源器件1’之间通过射频信号线8与接地面9进行互连。
以上所述仅为本实用新型创造的较佳实施例而已，并不用以限制本实用新型创造，本实用新型专利所声明的权利不仅限于上述的射频信号传输结构，而且包括了在这种传输结构基础上的演变结构。凡在本实用新型创造的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本实用新型创造的保护范围之内。

Claims (10)

1.一种射频芯片及其无源器件的封装结构，其特征在于：包括塑封体(4)以及RDL再布线层(5)，所述RDL再布线层(5)设置在塑封体(4)的表面，射频芯片(1)及无源器件(2)塑封在塑封体(4)内。
2.如权利要求1所述的一种射频芯片及其无源器件的封装结构，其特征在于：所述RDL再布线层(5)由高分子聚合物(52)和金属化层(54)所构成，高分子聚合物(52)覆盖在整个塑封体(4)的表面，金属化层(54)被包裹在高分子聚合物(52)内，金属化层(54)连接射频芯片(1)及无源器件(2)的端口和外部电路。
3.如权利要求2所述的一种射频芯片及其无源器件的封装结构，其特征在于：金属化层(54)包含金属化图层(542)、金属化通孔(544)，以及BGA焊盘(546)，金属化图层(542)之间采用金属化通孔(544)进行连接，距离射频芯片(1)最近的金属化图层(542)通过金属化通孔(544)连接射频芯片(1)的端口，该距离射频芯片(1)最近的金属化图层(542)同时通过金属化通孔(544)连接到其他无源器件(2)的端口，距离高分子聚合物(52)外表面最近的金属化图层(542)通过金属化通孔(544)连接BGA焊盘(546)，BGA焊盘(546)分布在RDL再布线层(5)的表层，所述BGA焊盘(546)与外围电路通过BGA焊球互连。
4.如权利要求3所述的一种射频芯片及其无源器件的封装结构，其特征在于：所述金属化图层(542)为2～3层。
5.如权利要求3所述的一种射频芯片及其无源器件的封装结构，其特征在于：每层金属化图层(542)厚度为5～8μm。
6.如权利要求3所述的一种射频芯片及其无源器件的封装结构，其特征在于：所述金属化通孔(544)高度为10～15μm。
7.如权利要求2所述的一种射频芯片及其无源器件的封装结构，其特征在于：射频芯片(1)的中间连接射频信号线(8)，射频芯片(1)的两端连接接地面(9)。
8.如权利要求7所述的一种射频芯片及其无源器件的封装结构，其特征在于：射频信号线(8)的外端连接射频焊盘(80)，接地面(9)的外端连接接地焊盘(90)，射频信号线(8)和射频焊盘(80)构成一组金属化层，接地面(9)和接地焊盘(90)构成一组金属化层。
9.如权利要求8所述的一种射频芯片及其无源器件的封装结构，其特征在于：射频焊盘(80)外有射频焊球(82)，接地面(9)外有接地焊球(92)。
10.如权利要求7所述的一种射频芯片及其无源器件的封装结构，其特征在于：射频芯片(1)之间或射频芯片(1)与无源器件(1’)之间通过射频信号线(8)与接地面(9)进行互连。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105807265A (zh) * 2016-05-13 2016-07-27 中国电子科技集团公司第五十八研究所 一种高性能小型化高度表信号处理与控制sip模块
US10756021B2 (en) 2017-10-19 2020-08-25 Samsung Electronics Co., Ltd. Semiconductor package
CN111785700A (zh) * 2020-09-07 2020-10-16 成都知融科技股份有限公司 一种超宽带互连结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105807265A (zh) * 2016-05-13 2016-07-27 中国电子科技集团公司第五十八研究所 一种高性能小型化高度表信号处理与控制sip模块
US10756021B2 (en) 2017-10-19 2020-08-25 Samsung Electronics Co., Ltd. Semiconductor package
CN111785700A (zh) * 2020-09-07 2020-10-16 成都知融科技股份有限公司 一种超宽带互连结构

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