CN204927324U - Lighting device - Google Patents
Lighting device Download PDFInfo
- Publication number
- CN204927324U CN204927324U CN201390001130.6U CN201390001130U CN204927324U CN 204927324 U CN204927324 U CN 204927324U CN 201390001130 U CN201390001130 U CN 201390001130U CN 204927324 U CN204927324 U CN 204927324U
- Authority
- CN
- China
- Prior art keywords
- distribution
- light
- sealing
- emitting component
- wall member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/003—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources
- F21V19/005—Fastening of light source holders, e.g. of circuit boards or substrates holding light sources by permanent fixing means, e.g. gluing, riveting or embedding in a potting compound
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/02—Arrangement of electric circuit elements in or on lighting devices the elements being transformers, impedances or power supply units, e.g. a transformer with a rectifier
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/06—Arrangement of electric circuit elements in or on lighting devices the elements being coupling devices, e.g. connectors
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
- F21V29/763—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section the planes containing the fins or blades having the direction of the light emitting axis
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Abstract
The utility model provides a lighting device, include: the base plate, the distribution pattern, set up in the surface of base plate, and the distribution weld pad has, light emitting component, set up in on the distribution pattern, and with set up in there is the electrode one side of distribution pattern for the mask of tossing about mutually, surround the wall component, in order to surround light emitting component's mode and setting up, the distribution is connected the distribution weld pad with the electrode, and the sealing, set up in surround the inboard of wall component, and cover light emitting component with the distribution. And, will the base plate by the center that surrounds the part that the wall component surrounded with the distribution connect in line segment that the position of distribution weld pad joins with the angle that the distribution became is more than 0 and below 45 or more than 135 and below 180. The utility model discloses a lighting device can improve the tolerance to the temperature variation.
Description
Technical field
The utility model relates generally to a kind of lighting device.
Background technology
Have a kind of lighting device, it comprises: substrate; Wiring pattern (pattern), is arranged on the surface of substrate; Multiple light-emitting diode (LightEmittingDiode, LED), is arranged on Wiring pattern; Many distributions, connect multiple light-emitting diode and Wiring pattern respectively; Surround wall member, be arranged on the surface of substrate to surround the mode of multiple light-emitting diode; And sealing, be arranged on the inner side surrounding wall member.
In this kind of lighting device, due to lighting and extinguishing of light-emitting diode, sealing can produce thermal deformation (Swelling and contraction caused because of variations in temperature).Further, when in order to realize high light quantity use multiple light-emitting diode time, size (size)/volume of sealing becomes large, and the impact of thermal deformation becomes larger.And in vehicle-mounted lighting device, and then add the change of the ambient temperature large scope of+85 DEG C (such as-40 DEG C with), the impact of thermal deformation will become larger.
Further, if the thermal change deformation of sealing is large, then the distribution of connecting luminous diode and Wiring pattern easily breaks.
Therefore, expect to develop a kind of lighting device that can improve tolerance to variations in temperature.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 2013-25935 publication
Utility model content
Utility model problem to be solved
Problem to be solved in the utility model is to provide a kind of lighting device, can improve the tolerance to variations in temperature.
The technological means of dealing with problems
The lighting device of execution mode comprises: substrate; Wiring pattern, is arranged at the surface of described substrate, and has distribution weld pad; Light-emitting component, is arranged on described Wiring pattern, and mask has electrode being opposition side with the side being arranged at described Wiring pattern; Surround wall member, arrange to surround the mode of described light-emitting component; Distribution, connects described distribution weld pad and described electrode; And sealing, be arranged at the inner side of described encirclement wall member, and cover described light-emitting component and described distribution.Further, the line segment linked the position that the center of the part of being surrounded by described encirclement wall member of described substrate and described distribution are connected to described distribution weld pad and described distribution angulation are more than 0 ° and less than 45 ° or more than 135 ° and less than 180 °.
Lighting device of the present utility model, preferably, the coefficient of linear expansion of described encirclement wall member is below the coefficient of linear expansion of described sealing.
Lighting device of the present utility model preferably, is less than 160 μm from the height of upper surface to the upper end of the wire loop of described distribution of described light-emitting component.
Lighting device of the present utility model, preferably, also comprises: power supply terminal, is electrically connected with described Wiring pattern; And lamp socket, chimeric with described power supply terminal.
The effect of utility model
The utility model can provide a kind of lighting device that can improve tolerance to variations in temperature.
Embodiment
1st utility model is a kind of lighting device, and it comprises: substrate; Wiring pattern, is arranged at the surface of described substrate, and has distribution weld pad; Light-emitting component, is arranged on described Wiring pattern, and mask has electrode being opposition side with the side being arranged at described Wiring pattern; Surround wall member, arrange to surround the mode of described light-emitting component; Distribution, connects described distribution weld pad and described electrode; And sealing, be arranged at the inner side of described encirclement wall member, and cover described light-emitting component and described distribution.
Further, the line segment linked the position that the center of the part of being surrounded by described encirclement wall member of described substrate and described distribution are connected to described distribution weld pad and described distribution angulation are more than 0 ° and less than 45 ° or more than 135 ° and less than 180 °.
According to this lighting device, the tolerance to variations in temperature can be improved.
2nd utility model is the lighting device according to the 1st utility model, and the coefficient of linear expansion of wherein said encirclement wall member is below the coefficient of linear expansion of described sealing.
According to this lighting device, the tolerance to variations in temperature can be improved further.
3rd utility model is the lighting device according to the 1st utility model, wherein from the height of upper surface to the upper end of the wire loop of described distribution of described light-emitting component be less than 160 μm.
According to this lighting device, the tolerance to variations in temperature can be improved further.
4th utility model is the lighting device according to the 1st utility model, also comprises: power supply terminal, is electrically connected with described Wiring pattern; And lamp socket (socket), chimeric with described power supply terminal.
Below, illustrated embodiment is carried out with reference to accompanying drawing.In addition, in each accompanying drawing, identical symbol is marked for same inscape, and suitable detailed.
Fig. 1 and Fig. 2 is the schematic isometric of the lighting device 1 for illustrating present embodiment.
In addition, Fig. 1 is the schematic isometric of lighting device 1, and Fig. 2 is the schematic perspective exploded view of lighting device 1.
And, in Fig. 1 and Fig. 2, for the ease of observing figure, eliminate the description of sealing 27.
Fig. 3 is the schematic plan view of illuminating part 20.
Fig. 4 is the schematic plan view of the illuminating part 20 of another execution mode.
In addition, in Fig. 3 and Fig. 4, the quantity of light-emitting component 22 and distribution 25 form difference is set.
As shown in Figures 1 and 2, lighting device 1 is provided with body 10, illuminating part 20, power supply 30 and lamp socket 40.
Body 10 is provided with incorporating section 11, flange (flange) portion 12 and fin (fin) 13.
Incorporating section 11 cylindrically, and is given prominence to from one of them face of flange part 12.In the inner side of incorporating section 11, be accommodated with illuminating part 20.And, in the inner side of incorporating section 11, be extruded with the power supply terminal 31 of power supply 30.
Flange part 12 is in discoideus, and one side is provided with incorporating section 11 wherein, and another side is provided with fin 13.
Fin 13 is provided with multiple highlightedly from the face of flange part 12.Multiple fin 13 in tabular, and plays function as radiating fin.
Body 10 has: the function of storage light-emitting portion 20 and power supply 30 etc.; And the heat produced by illuminating part 20 and power supply 30 is dispersed into the function of lighting device 1 outside.
Therefore, consider and heat is dispersed into outside, body 10 can be made to be formed by the material that thermal conductivity is high.Such as, body 10 can be formed by aluminium, aluminium alloy, high-termal conductivity resin etc.High-termal conductivity resin is such as in the resins such as PETG (PolyethyleneTerephthalate, PET) or nylon (nylon), and the fiber or the particle that are mixed with the high carbon of thermal conductivity or aluminium oxide etc. form.
Now, fin 13 grade also can be made heat to be dispersed into outside part and to be formed by the material that thermal conductivity is high, and other parts are formed by resin etc.
And, when body 10 major part by conductive material form, in order to ensure the electric insulation between power supply terminal 31 and the conductive material of body 10, also following structure can be adopted: utilize insulating material (not shown) to cover power supply terminal 31 around, and then, around it, configure conductive material.Insulating material is such as preferably resin etc. and the high material of thermal conductivity.And body 10 also can be provided with the installation portion being releasably installed on lamps apparatus for vehicle.
As shown in Figure 3 or Figure 4, illuminating part 20 is provided with substrate 21, light-emitting component 22, control element 23, Wiring pattern 24, distribution 25, surrounds wall member 26, sealing 27 and junction surface 28.
Substrate 21 is arranged on the inner side of the incorporating section 11 of body 10.
Substrate 21 in tabular, and is provided with Wiring pattern 24 on surface.
Material or the structure of substrate 21 are not particularly limited.Such as, substrate 21 can be formed by organic materials etc. such as the inorganic material such as aluminium oxide or aluminium nitride (pottery (ceramics)), paper phenol (paperphenol) or expoxy glasss (glassepoxy).And substrate 21 also can for the substrate by insulator clad metal plate surface.In addition, when by insulator clad metal plate surface, insulator both can be made up of organic material, also can be made up of inorganic material.
Now, when the caloric value of light-emitting component 22 is large, consider the viewpoint of heat radiation, preferably use the high material of thermal conductivity to form substrate 21.As the material that thermal conductivity is high, such as can illustrate as the pottery such as aluminium oxide or aluminium nitride, high-termal conductivity resin, by insulator clad metal plate surface material etc.
And substrate 21 both can be individual layer, also can be multilayer.
Light-emitting component 22 is provided with multiple on the Wiring pattern 24 being arranged at substrate 21 surface.
Light-emitting component 22 can adopt has the light-emitting component (with reference to Fig. 8) of electrode 29 with the face (upper surface) that is opposition side, the side being arranged at Wiring pattern 24.In addition, electrode 29 both can be arranged on the face (lower surface) of the side being arranged at Wiring pattern 24 and be the face (upper surface) of opposition side with the side being arranged at Wiring pattern 24, and also can only be arranged on the side being arranged at Wiring pattern 24 is the face (upper surface) of opposition side.
The electrode 29 being arranged on light-emitting component 22 lower surface is electrically connected with the installation weld pad 24b being arranged at Wiring pattern 24 via the thermosetting material of the conductivity such as silver paste (paste).The electrode 29 being arranged on light-emitting component 22 upper surface is electrically connected with the distribution weld pad 24c being arranged at Wiring pattern 24 via distribution 25.
Light-emitting component 22 such as can adopt light-emitting diode, Organic Light Emitting Diode, laser diode (laserdiode) etc.
The exit facet of the light of light-emitting component 22 and upper surface towards the face side of lighting device 1, and mainly carry out emergent light towards the face side of lighting device 1.
The quantity of light-emitting component 22 or size etc. are not limited to illustrative, suitably can change according to the size of lighting device 1 or purposes etc.
Control element 23 is installed on Wiring pattern 24.
Control element 23 controls the electric current flowing through light-emitting component 22.That is, control element 23 controls the luminescence of light-emitting component 22.
The quantity of control element 23 and size etc. are not limited to illustrative, suitably can change according to the quantity of light-emitting component 22 or specification etc.
Wiring pattern 24 is arranged at least one surface of substrate 21.
Wiring pattern 24 also can be arranged at two faces of substrate 21, but in order to reduce manufacturing cost, is preferably arranged on a face of substrate 21.
In Wiring pattern 24, be provided with input terminal 24a.
Input terminal 24a is provided with multiple.The power supply terminal 31 of power supply 30 is electrically connected on input terminal 24a.Therefore, light-emitting component 22 is electrically connected with power supply 30 via Wiring pattern 24.
The electrode 29 being arranged on light-emitting component 22 upper surface is electrically connected with the distribution weld pad 24c being arranged at Wiring pattern 24 by distribution 25.
It is the line of principal component that distribution 25 such as can adopt with gold.But the material of distribution 25 is not limited to take gold as the material of principal component, such as also can be with copper be principal component material or take aluminium as the material etc. of principal component.
Distribution 25 such as by ultrasonic fusing or thermal welding, and is electrically connected on the electrode 29 being arranged on light-emitting component 22 upper surface and the distribution weld pad 24c being arranged at Wiring pattern 24.Distribution 25 such as can use routing to engage (wirebonding) method, and is electrically connected on the electrode 29 being arranged on light-emitting component 22 upper surface and the distribution weld pad 24c being arranged at Wiring pattern 24.
In addition, can come as required suitably to arrange not shown circuit component etc.
Not shown circuit component is such as to be installed on the part on Wiring pattern 24.
Surround wall member 26 to be arranged on substrate 21 to surround the mode of multiple light-emitting component 22.Surround wall member 26 and such as there is tubular shape, and be configured with multiple light-emitting component 22 at central portion 26a.
Surround wall member 26 such as to be formed by the resins such as polybutylene terephthalate (PBT) (polybutyleneterephthalate, PBT) or Merlon (polycarbonate, PC) or pottery etc.
And, when by surround the material of wall member 26 be set to resin, can the particle of mixed oxidization titanium etc., to improve the light reflectance from light-emitting component 22 outgoing.
In addition, be not limited to the particle of titanium oxide, as long as mixing is by the particle formed the material high from the light reflectance of light-emitting component 22 outgoing.
And, surround wall member 26 and such as also can be formed by the resin of white.
The side wall surface 26b surrounding the central portion 26a side of wall member 26 is inclined-plane.After reflecting from the side wall surface 26b of the besieged wall member 26 of a part for the light of light-emitting component 22 outgoing, towards the face side outgoing of lighting device 1.
And, after the side wall surface 26b that there occurs the central portion 26a side of the besieged wall member 26 of light of total reflection from light-emitting component 22 towards a part for the light of the face side outgoing of lighting device 1 and at the upper surface interface of outside air (sealing 27 with) of sealing 27 reflects, again towards the face side outgoing of lighting device 1.
That is, surround wall member 26 and can adopt the component possessing reflector (reflector) function in the lump.In addition, the form of surrounding wall member 26 is not limited to illustrative, can suitably change.
Sealing 27 is arranged on the central portion 26a surrounding wall member 26.Sealing 27 is arranged to cover the mode of the inner side surrounding wall member 26.That is, sealing 27 is arranged on the inner side surrounding wall member 26, and covering luminous element 22 and distribution 25.
Sealing 27 is formed by the material with light transmission.Sealing 27 such as can be formed by silicone (silicone) resin etc.
Sealing 27 is such as by being formed to the central portion 26a potting resin surrounding wall member 26.The filling of resin such as can use the liquid quantitative blowoffs such as dispenser (dispenser) to carry out.
If to the central portion 26a potting resin surrounding wall member 26, then can suppress the Mechanical Contact to light-emitting component 22, the Wiring pattern 24 being configured at the central portion 26a surrounding wall member 26 and distribution 25 etc. from outside.And, air/water can be suppressed to grade be attached to light-emitting component 22, be configured at the Wiring pattern 24 of the central portion 26a surrounding wall member 26 and distribution 25 etc.Therefore, it is possible to improve the reliability of illumination apparatus 1.
And, sealing 27 can be made containing fluorophor.Fluorophor such as can adopt YAG system fluorophor (yttrium-aluminium-garnet (yttriumaluminumgarnet) is fluorophor).
Such as, when light-emitting component 22 is blue LED and fluorophor is YAG system fluorophor, YAG system fluorophor is subject to exciting from the blue light of light-emitting component 22 outgoing, thus radiates yellow fluorescence from YAG system fluorophor.Further, mixed with sodium yellow by blue light, thus from lighting device 1 outgoing white light.In addition, the kind of fluorophor or the kind of light-emitting component 22 are not limited to illustrative, suitably can change according to the purposes etc. of lighting device 1, to obtain required illuminant colour.
Encirclement wall member 26 is engaged with substrate 21 by junction surface 28.
Junction surface 28 in membranaceous, and is arranged between encirclement wall member 26 and substrate 21.
Junction surface 28 such as can adopt by making silicone-based adhesive or epoxy (epoxy) be the component that adhesive is solidified to form.
Junction surface 28 is such as formed by following flow process.
First, in the region that will arrange encirclement wall member 26 on substrate 21 surface, coating silicone-based adhesive or epoxy adhesive.
Such as, use dispenser etc., to the region coating adhesive that will arrange encirclement wall member 26 on substrate 21 surface.
Then, by making the evaporations such as solvent, adhesive being solidified, to form junction surface 28, and encirclement wall member 26 being engaged with substrate 21.
Such as, first, on be coated with adhesive, mounting surrounds wall member 26.
Then, pressing is surrounded wall member 26 and is surrounded wall member 26 to make adhesive be close contact in, and the position (thickness of adhesive) of wall member 26 is surrounded in adjustment.
Subsequently, by making the evaporations such as solvent, adhesive is solidified.
Herein, the viscosity before adhesive solidification is preferably 1Pas ~ 15Pas.If be set to this kind of viscosity, then, when using dispenser etc. to be coated with, be easily coated into arbitrary shape.
And, if be set to this kind of viscosity, then when making adhesive solidify, the position stability of encirclement wall member 26 can be made.
Power supply 30 is provided with multiple power supply terminal 31.
Multiple power supply terminal 31 extends in the inner side of incorporating section 11 and flange part 12.
One of them end of multiple power supply terminal 31 is given prominence to from the bottom surface of incorporating section 11, and is electrically connected with the input terminal 24a of Wiring pattern 24.The other end of multiple power supply terminal 31 is that contrary side is exposed from body 10 with the side arranging substrate 21.
In addition, the quantity, configuration, form etc. of power supply terminal 31 are not limited to illustrative, can suitably change.
And power supply 30 also can adopt the component possessing not shown substrate and the circuit component such as capacitor (condenser) and resistance.In addition, not shown substrate and circuit component such as can be arranged on the inside of incorporating section 11 or flange part 12.
It is the end of multiple power supply terminals 31 that contrary side is exposed at body 10 with the side arranging substrate 21 that lamp socket 40 is embedded in.
Not shown power supplys etc. are electrically connected on lamp socket 40.
Therefore, by lamp socket 40 being embedded in the end of power supply terminal 31, not shown power supply etc. is electrically connected with light-emitting component 22.
Lamp socket 40 such as can use adhesive etc. and be engaged in the key element of body 10 side.
Herein, lighting and extinguishing due to light-emitting component 22, sealing 27 can produce thermal deformation (expansion/contraction).
Fig. 5 (a), Fig. 5 (b) are the constructed profiles of the impact of thermal deformation for illustrating sealing 27.
In addition, Fig. 5 (a) be for illustrate substrate 21, distribution 25, surround the temperature of wall member 26 and sealing 27 low time the constructed profile of thermal deformation of sealing 27.
The constructed profile of the thermal deformation of the sealing 27 when Fig. 5 (b) is the temperature height for exemplary substrates 21, distribution 25, encirclement wall member 26 and sealing 27.
And, the deformation direction towards expression sealing 27 of the arrow in Fig. 5 (a), Fig. 5 (b).
The lengths table of the arrow in Fig. 5 (a), Fig. 5 (b) is shown in the size of stress or the deflection of sealing 27 that produce in sealing 27.Such as, the length of arrow is longer, then represent that the size of the stress produced in sealing 27 is larger, or represents that the deflection of sealing 27 is larger.
Such as, when using pottery to form substrate 21, the coefficient of linear expansion of substrate 21 is about 7ppm/K.If use gold to form distribution 25, then the coefficient of linear expansion of distribution 25 is about 14ppm/K.If use PBT to be formed surround wall member 26, then the coefficient of linear expansion of surrounding wall member 26 is about 90ppm/K.If use PC to be formed surround wall member 26, then the coefficient of linear expansion of surrounding wall member 26 is about 65ppm/K.If use silicone resin to form sealing 27, then the coefficient of linear expansion of sealing 27 is about 200ppm/K.
Therefore, the swell increment caused because of variations in temperature of sealing 27 and amount of contraction maximum.
Such as, the swell increment of sealing 27 and amount of contraction are the swell increment of substrate 21 and about 29 times of amount of contraction.
When the temperature is low, as shown in Fig. 5 (a), relatively, sealing 27 shrinks towards substrate 21, the Direction distortion of sealing 27 surface indentation upward.And being got over away from the periphery direction of sealing 27 by the center 100 surrounding the part (surrounding the inboard portion of wall member 26) that wall member 26 surrounds from substrate 21, then stress and the deflection of sealing 27 generation are larger.And get over away from the upper surface direction of sealing 27 from the surface of substrate 21, then stress and the deflection of sealing 27 generation are larger.
When temperature height, as shown in Fig. 5 (b), relatively, sealing 27 towards being expand in contrary side with the side that there is substrate 21, the Direction distortion that sealing 27 bloats towards upper surface.And being got over away from the periphery direction of sealing 27 by the center 100 surrounding the part that wall member 26 surrounds from substrate 21, then stress and the deflection of sealing 27 generation are larger.And get over away from the upper surface direction of sealing 27 from the surface of substrate 21, then stress and the deflection of sealing 27 generation are larger.
Now, in sealing 27, there is distribution 25.Therefore, when sealing 27 produces thermal deformation, external force will act on distribution 25.
Further, when in order to realize high light quantity use multiple light-emitting component 22 time, the size/volume of sealing 27 will become greatly, and the impact of therefore thermal deformation becomes larger.And when lighting device 1 is vehicle-mounted, and then add the change of the ambient temperature large scope of+85 DEG C (such as-40 DEG C with), the impact of thermal deformation will become larger.
Fig. 6 is the schematic plan view of the configuration of distribution 25 for illustrating comparative example.
Fig. 7 is the schematic isometric of the end for illustrating the distribution 25 being connected to distribution weld pad 24c.
As mentioned above, because of sealing 27 produce thermal deformation and External Force Acting in distribution 25.And as illustrated in Fig. 5 (a), Fig. 5 (b), sealing 27 deformation direction is in the in-plane direction seen as roughly radius vector direction from the center 100 of the part of being surrounded by encirclement wall member 26 of substrate 21.
Therefore, the External Force Acting be made up of the component in radius vector direction and the component of above-below direction is in distribution 25.
Herein, as shown in Figure 6, the line segment linked center 100 and the position (such as, the second position engaging (secondbonding)) making distribution 25 be connected to distribution weld pad 24c and the axis (line segment in the direction that distribution 25 extends) angulation (what be hereafter called distribution 25 arranges angle) of distribution 25 are set to θ.
Now, the direction that the component being radius vector direction by the direction that the line segment that center 100 and the position making distribution 25 be connected to distribution weld pad 24c are linked extends is had an effect.
Therefore, distribution 25 angle θ is set more close to 90 °, act on the power in the direction of the axis vertical take-off of distribution 25 larger.That is, distribution 25 angle θ is set more close to 90 °, larger to the lateral load of distribution 25.
Further, as shown in Figure 7, the end of the distribution weld pad 24c side of distribution 25 is because being applied in load and ultrasonic wave and conquassation.Therefore, part (neck (neck) portion) 25b between the part 25a of conquassation and the part of non-conquassation structurally becomes fragile.
Therefore, if lateral load F is excessive, then likely break at neck 25b place.
Now, as described later, if make the angle θ that arranges of distribution 25 be in the scope of regulation, just lateral load F can be suppressed, therefore, it is possible to suppress the broken string of distribution 25.
Fig. 8 is the schematic diagram arranging angle θ for illustrating distribution 25.
As shown in Figure 8, the angle θ that arranges of distribution 25 is more than 0 ° and less than 180 °.
Now, distribution 25 angle θ is set more close to 90 °, then larger to the lateral load of distribution 25, therefore more easily break.
Table 1 is the table arranging the relation of angle θ and broken string representing distribution 25.
Table 1 is the relation arranging angle θ and broken string of carrying out thermal shock test and obtaining distribution 25.
In thermal shock test, illuminating part 20 is placed 30 minutes in the environment of-40 DEG C, subsequently, illuminating part 20 is placed 30 minutes in the environment of+85 DEG C, and light-emitting component 22 is lighted.Further, this flow process is carried out 500 times repeatedly.
And what respectively make 10 distributions 25 arranges the different sample of angle θ, according to or without there is broken string and the number that there occurs broken string, judge the tolerance to variations in temperature.
In addition, when judging, the situation that distribution 25 does not break is designated as "○", is that the situation of 1/10 ~ 5/10 is designated as " △ " by the number that there occurs broken string, is that the situation of 6/10 ~ 10/10 is designated as "×" by the number that there occurs broken string.
[table 1]
As shown in Table 1, if make the angle θ that arranges of distribution 25 be more than 0 ° and less than 45 ° or more than 135 ° and less than 180 °, then the probability of happening of broken string can be made extremely low.
And as previously mentioned, get over away from the upper surface direction of sealing 27 from the surface of substrate 21, then stress and the deflection of sealing 27 generation will be larger.
Therefore, more close to the upper surface of sealing 27, the component acting on the above-below direction of distribution 25 will be larger.
Further, if the component of above-below direction is excessive, then likely break near the bonding part of distribution 25 and electrode 29.
Fig. 9 is the schematic diagram of the wire loop height h for illustrating distribution 25.
As shown in Figure 9, the wire loop height h of distribution 25 is the upper surface height to the wire loop upper end of distribution 25 from light-emitting component 22.
According to the opinion that inventor of the present utility model obtains, if the wire loop height h of distribution 25 is set to less than 160 μm, then the generation outline of the broken string near the bonding part of distribution 25 and electrode 29 can be made extremely low.
And, if the coefficient of linear expansion of surrounding wall member 26 is more than the coefficient of linear expansion of sealing 27, then can encourages the thermal deformation of sealing 27, cause distribution 25 easily to break.
Now, if make the coefficient of linear expansion of encirclement wall member 26 be more than the coefficient of linear expansion of substrate 21 and for below the coefficient of linear expansion of sealing 27, then can suppress the thermal deformation of sealing 27.
Such as, when use pottery (about 7ppm/K) forms substrate 21, and when using silicone resin to form sealing 27, PBT (about 90ppm/K) or PC (about 65ppm/K) can be used to be formed and to surround wall member 26.
Above, exemplified with several execution modes of the present utility model, but these execution modes are only illustration, are not intended the scope limiting utility model.The execution mode of these novelties can be implemented with other various forms, in the scope of purport not departing from utility model, can carry out various omission, replacement, change etc.In the scope that these execution modes and variation thereof are included in utility model or purport, and in the scope of the utility model be included in described in claims and equalization thereof.And aforesaid each execution mode can combination with one another and implementing.
Accompanying drawing explanation
Fig. 1 is the schematic isometric of the lighting device 1 for illustrating present embodiment.
Fig. 2 is the schematic perspective exploded view of the lighting device 1 for illustrating present embodiment.
Fig. 3 is the schematic plan view of illuminating part 20.
Fig. 4 is the schematic plan view of the illuminating part 20 of another execution mode.
Fig. 5 (a), Fig. 5 (b) are the constructed profiles of the impact of thermal deformation for illustrating sealing 27.
Fig. 6 is the schematic plan view of the configuration of distribution 25 for illustrating comparative example.
Fig. 7 is the schematic isometric of the end for illustrating the distribution 25 being connected to distribution weld pad 24c.
Fig. 8 is the schematic diagram arranging angle θ for illustrating distribution 25.
Fig. 9 is the schematic diagram of wire loop (loop) the height h for illustrating distribution 25.
Description of reference numerals:
1: lighting device;
10: body;
11: incorporating section;
12: flange part;
13: fin;
20: illuminating part;
21: substrate;
22: light-emitting component;
23: control element;
24: Wiring pattern;
24a: input terminal;
24b: install weld pad;
24c: distribution weld pad;
25: distribution;
25a: the part of conquassation;
25b: neck;
26: surround wall member;
26a: central portion;
26b: side wall surface;
27: sealing;
28: junction surface;
29: electrode;
30: power supply;
31: power supply terminal;
40: lamp socket;
100: center;
F: lateral load;
H: wire loop height;
θ: angle is set.
Claims (4)
1. a lighting device, it comprises:
Substrate;
Wiring pattern, is arranged at the surface of described substrate, and has distribution weld pad;
Light-emitting component, is arranged on described Wiring pattern, and mask has electrode being opposition side with the side being arranged at described Wiring pattern;
Surround wall member, arrange to surround the mode of described light-emitting component;
Distribution, connects described distribution weld pad and described electrode; And
Sealing, is arranged at the inner side of described encirclement wall member, and covers described light-emitting component and described distribution,
The line segment linked the position that the center of the part of being surrounded by described encirclement wall member of described substrate and described distribution are connected to described distribution weld pad and described distribution angulation are more than 0 ° and less than 45 ° or more than 135 ° and less than 180 °.
2. lighting device according to claim 1, the coefficient of linear expansion of wherein said encirclement wall member is below the coefficient of linear expansion of described sealing.
3. lighting device according to claim 1, wherein from the height of upper surface to the upper end of the wire loop of described distribution of described light-emitting component be less than 160 μm.
4. lighting device according to claim 1, also comprises:
Power supply terminal, is electrically connected with described Wiring pattern; And
Lamp socket, chimeric with described power supply terminal.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-095456 | 2013-04-30 | ||
JP2013095456A JP6338136B2 (en) | 2013-04-30 | 2013-04-30 | VEHICLE LIGHTING DEVICE AND VEHICLE LIGHT |
PCT/JP2013/084942 WO2014178159A1 (en) | 2013-04-30 | 2013-12-26 | Illumination device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204927324U true CN204927324U (en) | 2015-12-30 |
Family
ID=51843305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201390001130.6U Expired - Lifetime CN204927324U (en) | 2013-04-30 | 2013-12-26 | Lighting device |
Country Status (5)
Country | Link |
---|---|
US (1) | US9620690B2 (en) |
EP (1) | EP3002795B1 (en) |
JP (1) | JP6338136B2 (en) |
CN (1) | CN204927324U (en) |
WO (1) | WO2014178159A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017139404A (en) * | 2016-02-05 | 2017-08-10 | シチズン時計株式会社 | LED module |
EP3327801A1 (en) * | 2016-11-24 | 2018-05-30 | Valeo Iluminacion | Electronic assembly and method for creating an electronic assembly |
JP6566083B2 (en) * | 2018-05-11 | 2019-08-28 | 東芝ライテック株式会社 | VEHICLE LIGHTING DEVICE AND VEHICLE LIGHT |
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US20020053742A1 (en) * | 1995-09-01 | 2002-05-09 | Fumio Hata | IC package and its assembly method |
US6274890B1 (en) | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
JP3492178B2 (en) * | 1997-01-15 | 2004-02-03 | 株式会社東芝 | Semiconductor light emitting device and method of manufacturing the same |
JP3659407B2 (en) * | 2001-08-03 | 2005-06-15 | ソニー株式会社 | Light emitting device |
ATE525755T1 (en) * | 2001-10-12 | 2011-10-15 | Nichia Corp | LIGHT-EMITTING COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
JP2003347345A (en) * | 2002-05-24 | 2003-12-05 | Toshiba Corp | Semiconductor device, its manufacturing method and its manufacturing apparatus |
JP2004265986A (en) * | 2003-02-28 | 2004-09-24 | Citizen Electronics Co Ltd | High luminance light emitting element, and method for manufacturing the same and light emitting device using the same |
KR100665120B1 (en) * | 2005-02-28 | 2007-01-09 | 삼성전기주식회사 | Vertical structure nitride semiconductor light emitting device |
JP2007227762A (en) * | 2006-02-24 | 2007-09-06 | Sharp Corp | Semiconductor device and semiconductor module equipped therewith |
JP4729441B2 (en) * | 2006-06-09 | 2011-07-20 | スタンレー電気株式会社 | Vehicle lighting |
US20100027277A1 (en) * | 2007-05-15 | 2010-02-04 | Nichepac Technology Inc. | Light emitting diode package |
US8026533B2 (en) * | 2007-07-19 | 2011-09-27 | Nichia Corporation | Light emitting device and method of manufacturing the same |
JP2009044087A (en) * | 2007-08-10 | 2009-02-26 | Sanyo Electric Co Ltd | Light emitting device |
JP5416975B2 (en) * | 2008-03-11 | 2014-02-12 | ローム株式会社 | Semiconductor light emitting device |
JP5187746B2 (en) * | 2008-06-10 | 2013-04-24 | Necライティング株式会社 | Light emitting device |
US8324642B2 (en) * | 2009-02-13 | 2012-12-04 | Once Innovations, Inc. | Light emitting diode assembly and methods |
JP4951090B2 (en) | 2010-01-29 | 2012-06-13 | 株式会社東芝 | LED package |
JP2012019082A (en) * | 2010-07-08 | 2012-01-26 | Sanken Electric Co Ltd | Method for manufacturing light-emitting device, and light-emitting device |
JP2012049278A (en) * | 2010-08-26 | 2012-03-08 | I-Chiun Precision Industry Co Ltd | Method for manufacturing electrothermal separation type light-emitting diode bracket |
JP2013025935A (en) * | 2011-07-19 | 2013-02-04 | Ichikoh Ind Ltd | Light source unit of semiconductor type light source of vehicular lamp and vehicular lamp |
JP2013077463A (en) * | 2011-09-30 | 2013-04-25 | Ichikoh Ind Ltd | Semiconductor type light source for vehicular lamp fitting, semiconductor type light source unit for the same, and vehicular lamp fitting |
-
2013
- 2013-04-30 JP JP2013095456A patent/JP6338136B2/en active Active
- 2013-12-26 CN CN201390001130.6U patent/CN204927324U/en not_active Expired - Lifetime
- 2013-12-26 US US14/784,123 patent/US9620690B2/en active Active
- 2013-12-26 WO PCT/JP2013/084942 patent/WO2014178159A1/en active Application Filing
- 2013-12-26 EP EP13883832.1A patent/EP3002795B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2014178159A1 (en) | 2014-11-06 |
US20160079503A1 (en) | 2016-03-17 |
US9620690B2 (en) | 2017-04-11 |
EP3002795A4 (en) | 2016-12-28 |
JP6338136B2 (en) | 2018-06-06 |
JP2014216614A (en) | 2014-11-17 |
EP3002795A1 (en) | 2016-04-06 |
EP3002795B1 (en) | 2021-01-27 |
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