CN204858270U - Rearrangement device is cut apart to semiconductor laser light beam based on total reflection - Google Patents
Rearrangement device is cut apart to semiconductor laser light beam based on total reflection Download PDFInfo
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- CN204858270U CN204858270U CN201520343354.6U CN201520343354U CN204858270U CN 204858270 U CN204858270 U CN 204858270U CN 201520343354 U CN201520343354 U CN 201520343354U CN 204858270 U CN204858270 U CN 204858270U
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Abstract
The utility model provides a rearrangement device is cut apart to semiconductor laser light beam based on total reflection, pile and semiconductor laser including the dull and stereotyped jing dui of parallel, rectangular prism, cut apart the light beam after parallel dull and stereotyped jing dui is kicked into to the laser beam of semiconductor laser transmission, the rectangular prism heap is kicked into to light beam after cutting apart, resets the light beam after the reflection of rectangular prism's right angle face. This scheme adopts to be cut apart the light beam then closely arrange in the Y orientation in the size of X orientation, has realized fast slow axis optical quality's homogenizing, has the light beam and cuts apart and reset the device and do not have the slope, and the plastic light path is short, and beam shaping system debugs characteristics such as reliable and simple.
Description
Technical field
The utility model relates to field of laser device technology, device is reset in especially a kind of segmentation of the semiconductor laser beam based on total reflection.
Background technology
There is due to semiconductor laser the advantages such as electro-optical efficiency is high, good reliability, miniaturization, all developed rapidly and extensive use in laser pumping source and direct application etc., particularly as the pumping source of solid state laser and fiber laser, promote the fast development of all solid state laser.High brightness, high-power diode-end-pumped source are the important foundation conditions that fiber laser and solid state laser realize high efficiency, high-power output.
Semiconductor laser has asymmetrically distributed output light field.Semiconductor laser is perpendicular to the high angle of divergence direction (quick shaft direction) of PN junction presenting 30 ° to 70 °, but only 1 μm wide, luminous zone, beam quality reaches diffraction limit; Be parallel to the direction (slow-axis direction) of PN junction though the upper angle of divergence only having about 10 °, but luminous zone has the length of about 100 μm, and between luminous zone, there is energy dead band, be equivalent to many luminous zones intermittent arrangement and become line source, beam quality extreme difference, fast axle differs into hundred times with the beam quality of slow-axis direction.
The structure that two groups of traditional parallel flat heaps carry out light beam segmentation rearrangement can obtain good light beam rearrangement effect, but there is following problem: the segmentation of (1) light beam with reset the refractive index of Distance geometry parallel flat, inclination base angle is relevant, reach different designing requirements, need the strict control inclination base angle of parallel flat and the matching relationship of refractive index, difficulty of processing is larger.(2) do not change the direction of propagation of light beam, light path is longer, is unfavorable for the miniaturization of structure.
Therefore segmentation reset device fabrication simple, to debug easily and under segmentation resets the short prerequisite of light path, the light beam segmentation rearrangement realizing semiconductor laser is main advantage place of the present utility model.
Utility model content
The purpose of this utility model, be exactly for the deficiency existing for prior art, and provide a kind of semiconductor laser beam based on total reflection to split the technical scheme of resetting device, then the program adopts carries out splitting closely arrangement in Y-direction by light beam in the size of X-direction, achieve the homogenize of fast and slow axis beam quality, have light beam segmentation and reset device without inclination, shaping light path is short, and orthopedic systems debugs the features such as simple.
This programme is achieved by the following technical measures: device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection, includes parallel flat plate lens heap, right-angle prism heap and semiconductor laser; The laser beam of semiconductor laser is injected after parallel flat plate lens is piled and is split light beam, and the light beam after segmentation injects right-angle prism heap, resets after the reflection of the right-angle surface of right-angle prism to light beam.
Preferred as this programme: parallel flat plate lens heap is made up of the parallel flat plate lens that N sheet height is different; The cross sectional shape of described parallel flat plate lens is the parallelogram of angle 45 °.
Preferred as this programme: right-angle prism heap is made up of the right-angle prism stacked offset that N plate shape is identical.
Preferred as this programme: the quantity N of the parallel flat plate lens of parallel flat plate lens heap equals the square root of incident light source slow axis beam quality divided by fast axial light beam quality.
Preferred as this programme: in parallel flat plate lens heap, highly minimum parallel flat plate lens should be greater than the twice of launching spot Y-direction height along Y-direction height, adjacent, parallel dull and stereotyped mirror equals launching spot height in the Y direction along Y-direction difference in height, and its error is no more than ± and 10 μm.
Preferred as this programme: in parallel flat plate lens heap, N sheet parallel flat plate lens width in X direction should equal L/N, and wherein L is the width of incident light source in X-direction, the length along Z-direction should be greater than launching spot height in the Y direction, and its error is no more than ± and 10 μm.
Preferred as this programme: right-angle prism equals incident light source height in the Y direction along the thickness of Y-direction, the length of right-angle side be greater than incident light source X-direction width N doubly.
Preferred as this programme: N sheet right-angle prism is closely arranged along Y-direction, and the distance misplaced successively in X direction equals L/N, and wherein L is the width of incident light source in X-direction, its error is no more than ± and 10 μm.
Preferred as this programme: the hypotenuse of right-angle prism heap and the exiting surface of parallel flat plate lens heap answer close contact, and ensure that the hot spot after the segmentation of parallel flat plate lens heap and each right-angle prism are corresponding in turn to.
The beneficial effect of this programme can be learnt according to describing of such scheme, due in this scenario based on total reflection principle, then incident beam is carried out splitting closely arrangement in the size of X-direction and, in Y-direction, achieves the homogenize of semiconductor laser fast and slow axis beam quality; Simultaneously by 180 ° of turnovers of light beam, shorten shaping light path, be beneficial to the miniaturization of semiconductor laser module, have segmentation and reset device without inclination, shaping light path is short, and orthopedic systems debugs the advantages such as simple.
As can be seen here, the utility model compared with prior art, has substantive distinguishing features and progress, and its beneficial effect implemented also is apparent.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment.
Fig. 2 is the right view of Fig. 1.
Fig. 3 is the vertical view of Fig. 1.
Fig. 4 is the light splitting schematic diagram of parallel flat plate lens heap.
Fig. 5 is that the light path of right-angle prism heap resets schematic diagram.
In figure, 1 is laser beam, and 2 is parallel flat plate lens heap, and 3 is right-angle prism heap, and 4 is incident light source hot spot, and 5 is the hot spot after the segmentation of parallel flat plate lens heap, and 6 is the hot spot after right-angle prism heap is reset.
Embodiment
All features disclosed in this specification, or the step in disclosed all methods or process, except mutually exclusive feature and/or step, all can combine by any way.
Arbitrary feature disclosed in this specification (comprising any accessory claim, summary and accompanying drawing), unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object.That is, unless specifically stated otherwise, each feature is an example in a series of equivalence or similar characteristics.
Embodiment:
Semiconductor laser light source comprises 19 luminous points, each luminous zone is of a size of 1 μm × 100 μm, the spacing of adjacent luminous zone is 500 μm, slow axis divergence≤8 °, after fast axis collimation lens and slow axis collimating lens collimation, the beam quality of quick shaft direction (Y-direction) is 0.75mm × 4mrad, and the beam quality of slow-axis direction (X-direction) is 10mm × 32mrad.
Slow axis and fast axial light beam quality differ 106 times, then get N=10, and the spot width of X-direction is 10mm, and therefore first parallel flat plate lens is 2mm along the height of Y-direction, and width is in X direction 10/N=1mm, and the length along Z-direction is 1mm; All the other parallel flat plate lens in X direction with the size constancy of Z-direction, the height along Y-direction increases progressively 0.75mm successively.
Closely arranged in X-direction and Z-direction according to the mode shown in Fig. 1 by 10 parallel flat plate lens, the hot spot that incident beam is piled through parallel flat plate lens is as shown in (5) in Fig. 1.
Right-angle prism quantity in right-angle prism heap is also 10, and getting its right-angle side length is 10mm, is 0.75mm, closely arranges according to mode as shown in Figure 1 along Y-direction thickness, and adjacent straight angle prism misplaces 1mm in X direction.Hot spot after right-angle prism heap is as shown in (6) in Fig. 1.
After device is reset in light beam segmentation, the beam quality of semiconductor laser is: X-direction 1mm × 32mrad, Y-direction 7.5mm × 4mrad, and that only follow-uply need carry out X-direction expands the equalization that can realize XY direction beam quality.
The utility model is not limited to aforesaid embodiment.The utility model expands to any new feature of disclosing in this manual or any combination newly, and the step of the arbitrary new method disclosed or process or any combination newly.
Claims (9)
1. a device is reset in the semiconductor laser beam segmentation based on total reflection, it is characterized in that: include parallel flat plate lens heap, right-angle prism heap and semiconductor laser; The laser beam of described semiconductor laser is injected after parallel flat plate lens is piled and is split light beam, and the light beam after segmentation injects right-angle prism heap, resets after the reflection of the right-angle surface of right-angle prism to light beam.
2. device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection according to claim 1, it is characterized in that: described parallel flat plate lens heap is made up of the parallel flat plate lens that N sheet height is different; The cross sectional shape of described parallel flat plate lens is the parallelogram of angle 45 °.
3. device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection according to claim 1, it is characterized in that: described right-angle prism heap is made up of the right-angle prism stacked offset that N plate shape is identical.
4. device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection according to claim 1, it is characterized in that: the quantity N of the parallel flat plate lens of described parallel flat plate lens heap equals the square root of incident light source slow axis beam quality divided by fast axial light beam quality.
5. device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection according to claim 2, it is characterized in that: in described parallel flat plate lens heap, highly minimum parallel flat plate lens should be greater than the twice of launching spot Y-direction height along Y-direction height, adjacent, parallel dull and stereotyped mirror equals launching spot height in the Y direction along Y-direction difference in height, and its error is no more than ± and 10 μm.
6. device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection according to claim 2, it is characterized in that: in described parallel flat plate lens heap, N sheet parallel flat plate lens width in X direction should equal L/N, wherein L is the width of incident light source in X-direction, length along Z-direction should be greater than launching spot height in the Y direction, and its error is no more than ± and 10 μm.
7. device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection according to claim 3, it is characterized in that: described right-angle prism equals incident light source height in the Y direction along the thickness of Y-direction, the length of right-angle side be greater than incident light source X-direction width N doubly.
8. device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection according to claim 3, it is characterized in that: described N sheet right-angle prism is closely arranged along Y-direction, the distance misplaced successively in X direction equals L/N, wherein L is the width of incident light source in X-direction, its error is no more than ± and 10 μm.
9. device is reset in a kind of segmentation of the semiconductor laser beam based on total reflection according to claim 1, it is characterized in that: the hypotenuse of right-angle prism heap and the exiting surface of parallel flat plate lens heap answer close contact, and ensure that the hot spot after the segmentation of parallel flat plate lens heap and each right-angle prism are corresponding in turn to.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520343354.6U CN204858270U (en) | 2015-05-26 | 2015-05-26 | Rearrangement device is cut apart to semiconductor laser light beam based on total reflection |
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| CN201520343354.6U CN204858270U (en) | 2015-05-26 | 2015-05-26 | Rearrangement device is cut apart to semiconductor laser light beam based on total reflection |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836115A (en) * | 2015-05-26 | 2015-08-12 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser light beam segmentation rearrangement device based on total reflection |
| CN109193342A (en) * | 2018-10-15 | 2019-01-11 | 中国科学院理化技术研究所 | A kind of semiconductor laser |
| CN110927839A (en) * | 2018-09-20 | 2020-03-27 | 三星电子株式会社 | Optical rearranging device and system comprising an optical rearranging device |
-
2015
- 2015-05-26 CN CN201520343354.6U patent/CN204858270U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104836115A (en) * | 2015-05-26 | 2015-08-12 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser light beam segmentation rearrangement device based on total reflection |
| CN110927839A (en) * | 2018-09-20 | 2020-03-27 | 三星电子株式会社 | Optical rearranging device and system comprising an optical rearranging device |
| CN109193342A (en) * | 2018-10-15 | 2019-01-11 | 中国科学院理化技术研究所 | A kind of semiconductor laser |
| CN109193342B (en) * | 2018-10-15 | 2019-11-15 | 中国科学院理化技术研究所 | A kind of semiconductor laser |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191223 Address after: 330029 10th floor, science and technology building, Lianchuang photoelectric technology park, 168 Jingdong Avenue, Nanchang high tech Industrial Development Zone, Nanchang City, Jiangxi Province Patentee after: Jiangxi ZHONGJIU Laser Technology Co.,Ltd. Address before: 919 box 1013, box 621000, Mianyang City, Sichuan Province Patentee before: INSTITUTE OF APPLIED ELECTRONICS, CAEP |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230824 Address after: Room 517, 5th Floor, Building 1, Linrui Youth Apartment, No. 955 Rulehu Street, Linkong Economic Zone, Nanchang City, Jiangxi Province, 330117 Patentee after: ZHONGJIU Optoelectronic Industry Co.,Ltd. Address before: 10th Floor, Science and Technology Building, Lianchuang Optoelectronic Technology Park, No. 168 Jingdong Avenue, Nanchang High tech Industrial Development Zone, Nanchang City, Jiangxi Province, 330029 Patentee before: Jiangxi ZHONGJIU Laser Technology Co.,Ltd. |