CN204792774U - Copper bonding wire with coat - Google Patents

Copper bonding wire with coat Download PDF

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Publication number
CN204792774U
CN204792774U CN201520543202.0U CN201520543202U CN204792774U CN 204792774 U CN204792774 U CN 204792774U CN 201520543202 U CN201520543202 U CN 201520543202U CN 204792774 U CN204792774 U CN 204792774U
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CN
China
Prior art keywords
bonding wire
copper
aluminium
coat
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201520543202.0U
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Chinese (zh)
Inventor
林良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YANTAI YESNO ELECTRONIC MATERIALS CO Ltd
Original Assignee
YANTAI YESNO ELECTRONIC MATERIALS CO Ltd
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Priority to CN201520543202.0U priority Critical patent/CN204792774U/en
Application granted granted Critical
Publication of CN204792774U publication Critical patent/CN204792774U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45624—Aluminium (Al) as principal constituent

Abstract

The utility model relates to a copper bonding wire with coat, including central copper line, the coating has the aluminium coating on the central copper line. Its anti oxidability is very strong to the anti oxidability and the anti vulcanization ability of the plying of copper base key have been improved. Simultaneously, because the base member of general bonded is aluminium, aluminium and aluminium bonded almost do not have the production of intermediate compound.

Description

A kind of copper bonding wire with coat
Technical field
The utility model relates to a kind of semiconductor copper based bonding wire.
Background technology
At present for the lead packages bonding wire in the field such as integrated circuit, semi-conductor discrete device, what the most extensively adopt is gold bonding silk, but because the price of gold is expensive, this kind of bonding wire high cost, cause encapsulation user production cost higher, thus the copper based bonding wire of relative low price arises at the historic moment.
Except cheap, copper based bonding wire also has plurality of advantages, as mechanical performance comparatively number, thus bank is stablized, and not easily collapse silk or askew silk etc.But copper based bonding wire also exists the shortcomings such as oxidizable, hardness is large, and bonding matrix is generally aluminium, can generate intermediate compound between copper and aluminium, and intermediate compound can improve the resistance of material, produce heat, worsen the performance of electronic material.
Utility model content
Technical problem to be solved in the utility model is, provides a kind of copper bonding wire with coat, to improve the anti-oxidant of copper based bonding wire and sulfuration resistant ability, and suppresses the generation of intermediate compound.
The technical solution adopted in the utility model is as follows:
With a copper bonding wire for coat, comprise center copper cash, it is characterized in that, center copper cash is coated with aluminium coating.
Diameter with the copper bonding wire of coat is 15 ~ 60um, and wherein the thickness of aluminium coating is 0.1 ~ 1um.
Good effect of the present utility model is: the utility model applies aluminium lamination at Copper substrate, the oxide-film that can generate one deck densification due to aluminum itself stops it to be oxidized further, therefore its oxidation resistance is very strong, thus improves oxidation resistance and the sulfuration resistant ability of copper based bonding wire.Meanwhile, because the matrix of general bonding is aluminium, aluminium and aluminium bonding almost do not have the generation of intermediate compound.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
The utility model is further illustrated below in conjunction with the drawings and specific embodiments.
As Fig. 1, embodiment of the present utility model comprises center copper cash 1 and is coated in the aluminium coating 2 on copper cash.Diameter with the copper bonding wire of coat is 15 ~ 60um, and wherein the thickness of aluminium coating 2 is 0.1 ~ 1um.
The preparation method of embodiment of the present utility model comprises, and by plating or the mode of chemical plating, aluminium coating 2 is compound in the outer surface of center copper cash 1.

Claims (2)

1. with a copper bonding wire for coat, comprise center copper cash (1), it is characterized in that, center copper cash (1) is coated with aluminium coating (2).
2., as claimed in claim 1 with the copper bonding wire of coat, it is characterized in that, the diameter with the copper bonding wire of coat is 15 ~ 60um, and wherein the thickness of aluminium coating (2) is 0.1 ~ 1um.
CN201520543202.0U 2015-07-25 2015-07-25 Copper bonding wire with coat Active CN204792774U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520543202.0U CN204792774U (en) 2015-07-25 2015-07-25 Copper bonding wire with coat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520543202.0U CN204792774U (en) 2015-07-25 2015-07-25 Copper bonding wire with coat

Publications (1)

Publication Number Publication Date
CN204792774U true CN204792774U (en) 2015-11-18

Family

ID=54532769

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520543202.0U Active CN204792774U (en) 2015-07-25 2015-07-25 Copper bonding wire with coat

Country Status (1)

Country Link
CN (1) CN204792774U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110718525A (en) * 2019-10-22 2020-01-21 烟台一诺电子材料有限公司 Insulating corrosion-resistant inorganic amorphous coating bonding wire and preparation method thereof
CN114388682A (en) * 2022-01-08 2022-04-22 深圳金斯达半导体材料有限公司 Anti-sulfuration bonding silver wire

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110718525A (en) * 2019-10-22 2020-01-21 烟台一诺电子材料有限公司 Insulating corrosion-resistant inorganic amorphous coating bonding wire and preparation method thereof
CN114388682A (en) * 2022-01-08 2022-04-22 深圳金斯达半导体材料有限公司 Anti-sulfuration bonding silver wire

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