CN204720433U - Snap ring, bogey and semiconductor processing equipment - Google Patents
Snap ring, bogey and semiconductor processing equipment Download PDFInfo
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- CN204720433U CN204720433U CN201520377875.3U CN201520377875U CN204720433U CN 204720433 U CN204720433 U CN 204720433U CN 201520377875 U CN201520377875 U CN 201520377875U CN 204720433 U CN204720433 U CN 204720433U
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Abstract
The utility model provides a kind of snap ring, bogey and semiconductor processing equipment.Snap ring with for bearing wafer chuck with the use of, to be fixed on chuck by wafer, the edge of chuck is provided with along its circumference multiple gap spaced apart; The internal perisporium of snap ring is arranged at intervals with multiple paw and multiple first occlusion part along its circumference, paw for being laminated on the fringe region of wafer, so that wafer is fixed on chuck; The lower surface of the first occlusion part is higher than the lower surface of paw, and the first occlusion part and gap one_to_one corresponding, for blocking gap.The chuck that the utility model provides, under realizing fixed wafer and blocking gap condition, the glass at the moiety sheet back side being in vacant state also can be prevented by pressure break when wafer is bonding pad, certainly, for other brittle wafers, can prevent this Partial wafer being in vacant state from even being crushed by pressure break equally, thus can avoid causing serious and irremediable loss to wafer, thus can increase economic efficiency.
Description
Technical field
The utility model belongs to microelectronic processing technique field, is specifically related to a kind of snap ring, bogey and semiconductor processing equipment.
Background technology
Physical vapour deposition (PVD) (Physical Vapor Deposition, hereinafter referred to as PVD) technology or magnetron sputtering technique are the process technologies that microelectronic is conventional, in order to films such as plated metals.Fig. 1 is the structural representation of the reaction chamber of typical Pvd equipment.Refer to Fig. 1, in reaction chamber 10, be provided with the chuck 101 for bearing wafer S; Snap ring 102 for being laminated on the fringe region of wafer S upper surface, in order to wafer S is fixed on chuck 101, to ensure to fly preventing it from can not be blown during its temperature control at the back side blowing cooling gas to wafer S; The tip position of reaction chamber 10 is provided with target position, for installing target 103, when starting sputter deposition craft, negative pressure is applied to target 103 by DC power supply, so that the process gas (such as argon gas) in reaction chamber 10 is excited formation plasma, and attract the positive charged ions in plasma to move towards target 103, when the energy of positive charged ions is enough high, the atom on target 103 surface is bombarded effusion and is deposited on wafer S upper surface, thus realizes deposit film on the upper surface of wafer S.
Particularly, Fig. 2 is the vertical view of existing snap ring and chuck, refer to Fig. 2, the circumference of snap ring 102 is arranged at intervals with multiple large paw 1021 and multiple little paw 1022, and multiple large paw 1021 and multiple little paw 1022 are along the upper alternate setting of snap ring 102 circumference, one end away from snap ring 102 of each large paw 1021 and little paw 1022 is provided with occlusion part, usually occlusion part is referred to as " eaves " structure, to avoid the position deposit film contacted with wafer S-phase at its lower surface, there is bonding die phenomenon when unloading wafer S.
Further, have along the spaced multiple gap 1011 of its circumference at the marginal position place of chuck 101, for realizing and miscellaneous part interoperation.In this case, the corresponding gap 1011 of large paw 1021 is arranged, wafer S is vacant state in gap 1011 position, large snap ring 1021 is not only for being fixed on chuck 101 by wafer S, but also for blocking gap 1011, pollute the cavity environment below chuck 101 to avoid particle via gap 1011; Other marginal positions of the removing gap 1011 of the corresponding chuck 101 of little paw 1022 are arranged.
In actual applications, above-mentioned snap ring 102 is adopted inevitably to there is following technical problem: because wafer S is vacant state in gap 1011 position, and, large paw 1021 is vertically pressed on the Cutting Road 11 on wafer S surface, as shown in Figure 3, therefore, when wafer S is bonding pad, the frangible glass of one deck is posted at the back side of bonding pad, if the warpage of bonding pad is comparatively large and/or Cutting Road 11 is darker, then easily cause large paw 1021 by the edge pressure break of glass, namely, glass surface is caused to crack, thus can cause when follow-up precut technique to prolong from the place of crackle and split, thus cause larger and irremediable loss, deficiency in economic performance.
Utility model content
The utility model is intended at least to solve one of technical problem existed in prior art, propose a kind of snap ring, bogey and semiconductor processing equipment, this snap ring is realizing fixed wafer with under the condition of blocking gap, the glass at the moiety sheet back side being in vacant state can also be prevented by pressure break when wafer is bonding pad, certainly for other brittle wafers, can prevent this Partial wafer being in vacant state from even being crushed by pressure break equally, thus can avoid causing serious and irremediable loss to wafer, thus the economic benefit of bogey and semiconductor processing equipment can be improved.
For one of solving the problem, the utility model provides a kind of snap ring, and described snap ring is provided with along its circumference multiple gap spaced apart with the chuck for bearing wafer with the use of the edge of, described chuck; The internal perisporium of described snap ring is arranged at intervals with multiple paw and multiple first occlusion part along its circumference, wherein, described paw for being laminated on the fringe region of described upper wafer surface, so that described wafer is fixed on described chuck; Described first occlusion part and described gap one_to_one corresponding, for blocking described gap, and, time on the fringe region that described paw is laminated on described upper wafer surface, described first occlusion part not with described contact wafers.
Preferably, multiple described first occlusion part along described snap ring circumferential interval and evenly arrange.
Preferably, often one or more described paw is provided with between adjacent two described first occlusion parts.
Preferably, described paw is arranged on the point midway between adjacent two the first occlusion parts; Or, multiple described paw interval and evenly arranging between adjacent two the first occlusion parts.
Preferably, the region near its annular distance on the lower surface of described snap ring is provided with annular protrusion, and described annular protrusion is nested with the side-wall outer side at described wafer when described snap ring is laminated on the fringe region of described upper wafer surface.
Preferably, each described paw is provided with the second occlusion part away from one end of described snap ring.
Preferably, vertical distance range when described first occlusion part is on the fringe region that described paw is laminated on described upper wafer surface and between described upper wafer surface is between 0.2um ~ 0.3um.
Preferably, vertical range when described first occlusion part is on the fringe region that described paw is laminated on described upper wafer surface and between described upper wafer surface and described first occlusion part along the ratio range of described snap ring radial dimension between 0.075 ~ 0.05.
As another technical scheme of the utility model, also provide a kind of bogey, comprise the snap ring that chuck and technique scheme provide.
As another technical scheme of the utility model, also provide a kind of semiconductor processing equipment, comprise the bogey that reaction chamber and technique scheme provide, described bogey is arranged in reaction chamber.
The utility model has following beneficial effect:
The snap ring that the utility model provides, perisporium is arranged at intervals with multiple paw and multiple first occlusion part along its circumference within it, and wherein, the lower surface of paw is stacked in the fringe region of upper wafer surface, for wafer is fixed on chuck; Gap one_to_one corresponding on first occlusion part and chuck, for blocking this gap, and, time on the fringe region that paw is laminated on upper wafer surface, the first occlusion part not with contact wafers.In this case, wafer can be fixed by paw, and the first occlusion part can not contact with the subregion that wafer is in vacant state, and that is, the subregion that wafer is in vacant state can not be subject to the pressure of the first occlusion part.The utility model realize fixed wafer and block gap condition under prevent from being in the back glass of the subregion of vacant state when wafer is bonding pad by pressure break, certainly for other brittle wafers, can prevent this subregion being in vacant state from even being crushed by pressure break equally, thus can avoid causing serious and irremediable damage to wafer, increase economic efficiency.
The bogey that the utility model provides, its snap ring adopting another technical scheme of the utility model to provide, can prevent frangible wafer (such as, the back side has the bonding pad of glass) from even being crushed by snap ring pressure break, thus the loss of wafer can be reduced, increase economic efficiency.
The semiconductor processing equipment that the utility model provides, its bogey adopting another technical scheme of the utility model to provide, can reduce the loss of wafer, thus can increase economic efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of the reaction chamber of typical Pvd equipment;
Fig. 2 is the vertical view of existing snap ring and chuck;
Fig. 3 is the existing vertical view when wafer is fixed between snap ring and chuck;
The upward view of the snap ring that Fig. 4 provides for the utility model embodiment;
Fig. 5 is cutaway view when wafer is fixed between the snap ring shown in Fig. 4 and chuck; And
Fig. 6 is the vertical view in the utility model when wafer is fixed between snap ring and chuck.
Embodiment
For making those skilled in the art understand the technical solution of the utility model better, the snap ring, bogey and the semiconductor processing equipment that provide the utility model below in conjunction with accompanying drawing are described in detail.
The upward view of the snap ring that Fig. 4 provides for the utility model embodiment; Fig. 5 is cutaway view when wafer is fixed between the snap ring shown in Fig. 4 and chuck; Fig. 6 is the vertical view in the utility model when wafer is fixed between snap ring and chuck.See also Fig. 4, Fig. 5 and Fig. 6, the snap ring 20 that the present embodiment provides, snap ring 20 with for bearing wafer S chuck 30 with the use of, so that wafer S is fixed on chuck 30, the marginal position of chuck 30 is provided with along its circumference multiple gap 301 spaced apart, and gap 301 is for coordinating miscellaneous part.
The internal perisporium of snap ring 20 is arranged at intervals with multiple paw 201 and multiple first occlusion part 202 along its circumference, wherein, paw 201 for being laminated on the fringe region of wafer S upper surface, so that wafer S is fixed on chuck 30; First occlusion part 202 and gap 301 one_to_one corresponding, for blocking gap 301, pollute with the below avoiding particle to enter chuck 30 from this gap 301, and, time on the fringe region that paw 202 is laminated on wafer S upper surface, the first occlusion part 202 does not contact with wafer S.
In addition, the radial dimension of gap 301 is less than the radial dimension of wafer S, this makes the subregion of the wafer when wafer S is placed on chuck 30 corresponding to gap 301 be in vacant state, but, due on the fringe region that paw 202 is laminated on wafer S upper surface time, first occlusion part 202 does not contact with wafer S, therefore, while paw 201 fixed wafer S, first occlusion part 202 can not contact with the subregion being in vacant state of wafer, that is, the subregion being in vacant state of wafer can not be subject to the pressure of the first occlusion part 202.
As from the foregoing, adopt the snap ring that the utility model provides, prevent the back glass being in the subregion of vacant state of wafer by pressure break when wafer S is bonding pad under the condition that can be implemented in fixed wafer and block gap 301, certainly, can prevent the subregion being in vacant state from even being crushed by pressure break equally for other brittle wafers, thus can avoid causing serious and irremediable damage to wafer, increase economic efficiency.
In the present embodiment, the first occlusion part 202 is arranged based on gap 301 correspondence, and therefore, under the condition that setting position and the quantity of gap 301 have been arranged, setting position and the quantity of the first occlusion part 202 also set.Particularly, refer to Fig. 4, multiple gap 301 along chuck 30 circumferential interval and evenly arrange, therefore, multiple first occlusion part 202 along snap ring 20 circumferential interval and evenly arrange.
Preferably, often be provided with one or more paw 201 between adjacent two the first occlusion parts 202, to realize improving paw 201 distributing homogeneity in the circumferential to a certain extent, the uniform force of wafer can be improved to a certain extent, thus the fixing stability of wafer can be improved.
Further preferably, if be often provided with a paw 201 between adjacent two the first occlusion parts 202, then this paw 201 is arranged on the point midway between adjacent two the first occlusion parts 202, and the arc length namely between this paw 201 and two adjacent with it the first occlusion parts 202 is equal; If be often provided with multiple paw 201 between adjacent two the first occlusion parts 202, then multiple paw 201 interval and evenly arranging between adjacent two the first occlusion parts 202.In the case, the distributing homogeneity of paw 201 in snap ring 20 circumference can be improved further, thus wafer S uniform force in the circumferential can be realized further, cause towards the refrigerating gas of wafer S back side conveying from slot leakage between wafer S and chuck 30 to avoid discontinuity in wafer S circumference.Particularly, as shown in Figure 4, multiple first occlusion part 202 is along the upper interval of snap ring 20 circumference and evenly arrange, often interval and be evenly provided with two paws 201 between adjacent two the first occlusion parts 202.
In actual applications, quantity and the position of paw 201 should be set according to actual conditions, to ensure stable for wafer S to be fixed on chuck 30, such as, comparison diagram 2 and Fig. 4, the snap ring 20 that the present embodiment provides compared to existing technology in snap ring 20, add the paw 201 of a times, and all paws 201 and the first occlusion part 202 along snap ring 20 circumferential interval and evenly arrange.
In addition preferably, each paw 201 is provided with the second occlusion part away from one end of snap ring 20, and the second occlusion part can avoid the position deposit film contacted with wafer S-phase at paw 201, thus can avoid, when unloading wafer S, bonding die phenomenon occurs.
In actual applications, due to most particle be subject to chuck 30 attraction with electric field move along the direction perpendicular to wafer S, its component moved in the horizontal direction is less, that is, the possibility of particle successively through entering below chuck 30 from the gap between the first occlusion part 202 and wafer S, gap 301 is less, therefore, as long as the area meeting the first occlusion part 202 can block the aperture area not blocked S by wafer of gap 301, just can realize very well blocking particle via gap 301 towards chuck 30 moved beneath.
Preferably, vertical range H scope when first occlusion part 202 is on the fringe region that paw 201 is laminated on wafer S upper surface and between wafer S upper surface is between 0.2um ~ 0.3um, the gap that this vertical range H is formed as Particles Moving to the horizontal prepass of gap 301, the movement difficulty of particle can be strengthened, thus effectively Particles Moving can be stopped, thus can realize further blocking gap 301, avoid particle to move to the below of chuck.
Further preferably, vertical range H and the first occlusion part 202 along the ratio range of the size of snap ring 20 radial direction between 0.075 ~ 0.05, this makes above-mentioned horizontal prepass longer, particle needs could arrive gap 301 through the mobile long period, thus can further realize blocking gap, avoid particle to move to the below of chuck.
Still more preferably, region near its annular distance on the lower surface of snap ring 20 is provided with annular protrusion 203, and annular protrusion 203 is nested with the side-wall outer side at wafer S when snap ring 20 is laminated on the fringe region of wafer S upper surface, like this, passage is vertically also add at the end of horizontal prepass, particle needs the turnover of motion path just can arrive gap 301, and the active force realizing turnover does not exist in existing technical process, therefore, the possibility that particle arrives gap 301 is just very little, thus particle can be avoided to a great extent to move to chuck 30 lower chamber pollute it.
As another one technical scheme, the utility model embodiment also provides a kind of bogey, comprise snap ring and chuck, chuck is used for bearing wafer, the edge of chuck is provided with along its circumference multiple gap spaced apart, snap ring for wafer is fixed on chuck, the snap ring that snap ring adopts the utility model above-described embodiment to provide.
Be provided with cooling pipe in chuck, refrigerating gas is carried towards the back side of wafer from cooling pipe, to cool wafer, thus realizes carrying out temperature control to wafer, to meet technological temperature requirement.
Further, multiple gap along chuck circumferential interval and evenly arrange, in this case, arrange because the first occlusion part that snap ring is arranged is corresponding with gap, therefore, the first occlusion part along snap ring circumferential interval and evenly arrange.
When technical process, drive the chuck carrying wafer to rise, until by snap ring jack-up to predeterminated position, now, wafer is pressed on chuck by the snap ring with constant weight, flies to ensure in technical process that wafer can not blow by refrigerating gas.
As from the foregoing, the bogey that the utility model embodiment provides, due to the snap ring that it adopts another technical scheme of the utility model to provide, thus frangible wafer can be prevented (such as, the back side has the bonding pad of glass) even crushed by snap ring pressure break, thus the loss of wafer can be reduced, increase economic efficiency.
Be re-used as another one technical scheme, the utility model embodiment also provides a kind of semiconductor processing equipment, comprises reaction chamber and bogey, and bogey is arranged in reaction chamber, for bearing wafer, the bogey that bogey adopts the utility model above-described embodiment to provide.
Particularly, this semiconductor processing equipment comprises Pvd equipment.
As from the foregoing, the semiconductor processing equipment that the utility model embodiment provides, due to the bogey that it adopts another technical scheme of the utility model to provide, thus can avoid the loss of wafer, thus can increase economic efficiency.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present utility model is described and adopts, but the utility model is not limited thereto.For those skilled in the art, when not departing from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement are also considered as protection range of the present utility model.
Claims (10)
1. a snap ring, is characterized in that, described snap ring is provided with along its circumference multiple gap spaced apart with the chuck for bearing wafer with the use of the edge of, described chuck; The internal perisporium of described snap ring is arranged at intervals with multiple paw and multiple first occlusion part along its circumference, wherein
Described paw for being laminated on the fringe region of described upper wafer surface, so that described wafer is fixed on described chuck;
Described first occlusion part and described gap one_to_one corresponding, for blocking described gap, and, time on the fringe region that described paw is laminated on described upper wafer surface, described first occlusion part not with described contact wafers.
2. snap ring according to claim 1, is characterized in that, multiple described first occlusion part along described snap ring circumferential interval and evenly arrange.
3. snap ring according to claim 1 and 2, is characterized in that, is often provided with one or more described paw between adjacent two described first occlusion parts.
4. snap ring according to claim 3, is characterized in that, described paw is arranged on the point midway between adjacent two the first occlusion parts; Or
Multiple described paw interval and evenly arranging between adjacent two the first occlusion parts.
5. snap ring according to claim 1, it is characterized in that, region near its annular distance on the lower surface of described snap ring is provided with annular protrusion, and described annular protrusion is nested with the side-wall outer side at described wafer when described snap ring is laminated on the fringe region of described upper wafer surface.
6. snap ring according to claim 1, is characterized in that, each described paw is provided with the second occlusion part away from one end of described snap ring.
7. snap ring according to claim 1, is characterized in that, vertical distance range when described first occlusion part is on the fringe region that described paw is laminated on described upper wafer surface and between described upper wafer surface is between 0.2um ~ 0.3um.
8. the snap ring according to claim 1 or 7, it is characterized in that, vertical range when described first occlusion part is on the fringe region that described paw is laminated on described upper wafer surface and between described upper wafer surface and described first occlusion part along the ratio range of described snap ring radial dimension between 0.075 ~ 0.05.
9. a bogey, is characterized in that, comprises chuck and the snap ring as described in claim 1-8 any one.
10. a semiconductor processing equipment, is characterized in that, comprise reaction chamber and bogey as claimed in claim 9, described bogey is arranged in reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520377875.3U CN204720433U (en) | 2015-06-03 | 2015-06-03 | Snap ring, bogey and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520377875.3U CN204720433U (en) | 2015-06-03 | 2015-06-03 | Snap ring, bogey and semiconductor processing equipment |
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| Publication Number | Publication Date |
|---|---|
| CN204720433U true CN204720433U (en) | 2015-10-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520377875.3U Active CN204720433U (en) | 2015-06-03 | 2015-06-03 | Snap ring, bogey and semiconductor processing equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876315A (en) * | 2015-12-14 | 2017-06-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pressure ring, pre-cleaning cavity and semiconductor processing equipment |
| CN106876316A (en) * | 2015-12-14 | 2017-06-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pressure ring and semiconductor processing equipment |
| CN111593311A (en) * | 2020-06-23 | 2020-08-28 | 北京北方华创微电子装备有限公司 | Target material for semiconductor processing equipment and semiconductor processing equipment |
-
2015
- 2015-06-03 CN CN201520377875.3U patent/CN204720433U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876315A (en) * | 2015-12-14 | 2017-06-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pressure ring, pre-cleaning cavity and semiconductor processing equipment |
| CN106876316A (en) * | 2015-12-14 | 2017-06-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pressure ring and semiconductor processing equipment |
| WO2017101543A1 (en) * | 2015-12-14 | 2017-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Compression ring and semiconductor processing equipment |
| CN111593311A (en) * | 2020-06-23 | 2020-08-28 | 北京北方华创微电子装备有限公司 | Target material for semiconductor processing equipment and semiconductor processing equipment |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 No. 8, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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| CP03 | Change of name, title or address |