CN204718717U - The MEMS pressure sensor of silicon island membrane structure - Google Patents
The MEMS pressure sensor of silicon island membrane structure Download PDFInfo
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- CN204718717U CN204718717U CN201520397495.6U CN201520397495U CN204718717U CN 204718717 U CN204718717 U CN 204718717U CN 201520397495 U CN201520397495 U CN 201520397495U CN 204718717 U CN204718717 U CN 204718717U
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Abstract
The utility model discloses the MEMS pressure sensor of a kind of silicon island membrane structure, relate to pressure sensor technique field.The utility model adopts monolithic SOI material to prepare pressure transducer, and chip size can accomplish a millimeter magnitude, and compared with the silicon cup type pressure transducer of same size, the tube core number on wafer has the raising on an order of magnitude; Adopt the sensing modes of silicon island membrane structure, measurement sensistivity improves; Preparation technology is simple, and sensor cost declines to a great extent; Utilize the little feature of the second silicon layer thickness error of SOI material to prepare sensing membrane, measurement sensistivity, precision are improved; The problem that the photoresist that two mask etching mode avoids affects subsequent optical carving technology because once etching the large step of rear formation does not cover, not only can Simplified flowsheet, also for high aspect ratio technique provides another kind of solution; In addition, the pressure drag of described pressure transducer is formed on the insulating layer, can ensure normally to work under 300 DEG C of hot environments.
Description
Technical field
The utility model relates to pressure sensor technique field, particularly relates to the MEMS pressure sensor of a kind of silicon island membrane structure.
Background technology
MEMS silicon pressure sensor is an of paramount importance class sensor in current commercial production, is widely used in the fields such as auto industry, space industry, military affairs, health care.At present, the range of the silicon pressure sensor on home market is mostly at more than 10KPa, and the product of lower amounts journey mainly relies on external import.
Piezoresistive pressure sensor is a current class pressure transducer the most widely, utilize good mechanical property and the electric property of silicon, by diffusion or the method for ion implantation force sensing resistance is injected in sensitive thin film and achieves the integrated of sensing element and change-over circuit.Most important two performance parameters of evaluation and test sensor are sensitivity and the linearity.For traditional C type structure of silicon cup formula pressure transducer, when the flat film of periphery fixed is as sensitive membrane, the thinning sensitive thin film thickness of usual employing improves its pressure-sensitive ability, while thinning sensitive thin film, the pressure stresses of film surface converts cause non-linear and also can seriously increase, therefore, this flat membrane structure is not suitable for low-quantum pressure sensor, and the general scope of application is middle high range.As patent name is: pressure sensor, publication number is CN103837289A, publication date is on June 4th, 2014, described pressure transducer comprises pressure sensor chip prepared by the multilayer SOI material that is provided with cavity in the middle of one and two ends and is provided with the face glass and of via for the back glass of Stress match, by silex glass bonding, three layers are linked together, its multilayer SOI material cost making chip is expensive, and complex process is suitable for some special occasions and uses.
In order to address this problem, must reduce the thickness of sensitive thin film to improve sensitivity, this has higher requirement with regard to giving the processing technology of device.Island membrane structure can obtain the sensitivity higher than flat membrane structure under identical thickness.During the chip pressurized of island membrane structure, stress can the trench region of high concentration between island and edge, thus sensitivity is obtained significantly improve, and it also can realize overvoltage protection and non-linear interior compensation.In addition, in order to ensure that the frequency response of pressure test exports, avoid environmental factor to the interference of test, measuring silicon island elevation is strictly controlled, be generally less than 100 μm, but the restriction of dry etching masking layer process owing to receiving is prepared by high-aspect-ratio deep groove structure in the preparation of this structure, most employing anisotropic body silicon wet corrosion technique prepares island membrane structure, the angle being greater than 90 ° can be formed on this technique corrosion rear chamber sidewall and bottom, be unfavorable for reducing chip area, reduce silicon chip utilization factor, the major reason that this Ye Shi island membrane structure pressure transducer development is restricted.
Utility model content
Technical problem to be solved in the utility model is to provide the MEMS pressure sensor of a kind of silicon island membrane structure, and described sensor has the advantages that measurement sensistivity is high, precision is high, can ensure normally to work under 300 DEG C of hot environments.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: the MEMS pressure sensor of a kind of silicon island membrane structure, it is characterized in that: described sensor comprises the second silicon layer, the lower surface of described second silicon layer is provided with silicon island membrane structure, the upper surface of described second silicon layer is provided with the 3rd insulation course, the upper surface of described 3rd insulation course is provided with four pressure drags, and four pressure drags carry out interconnected formation Wheatstone bridge by metal line, and the upper surface of described 3rd insulation course is provided with fairlead.
Further technical scheme is: described silicon island membrane structure comprises spaced left silicon island membrane module, middle silicon island membrane module and right silicon island membrane module, left silicon island membrane module, middle silicon island membrane module and right silicon island membrane module are the second insulation course and the first silicon layer from top to bottom, described left silicon island membrane module is identical with the structure of right silicon island membrane module, and the thickness of the first silicon layer on described left silicon island membrane module and right silicon island membrane module is greater than the thickness of the first silicon layer on the membrane module of middle silicon island.
Further technical scheme is: form interval between described left silicon island membrane module and middle silicon island membrane module and between middle silicon island membrane module and right silicon island membrane module, and described pressure drag is relative with above-mentioned interval.
The beneficial effect adopting technique scheme to produce is: the utility model adopts monolithic SOI material to prepare pressure transducer, chip size can accomplish 1mm × 1mm, compared with the silicon cup type pressure transducer of same size, the tube core number on wafer has the raising on an order of magnitude; Adopt the sensing modes of silicon island membrane structure, measurement sensistivity improves; Preparation technology is simple, and sensor cost declines to a great extent; Utilize the feature of SOI material device layer layer (the second silicon layer) thickness error little (film thickness error is at ± 0.5 μm) to prepare sensing membrane, measurement sensistivity, precision are improved; The problem that the photoresist that two mask etching mode avoids affects subsequent optical carving technology because once etching the large step of rear formation does not cover, not only can Simplified flowsheet step, also for high aspect ratio technique provides another kind of solution; In addition, the pressure drag of pressure transducer of the present utility model is formed on the insulating layer, can ensure normally to work under 300 DEG C of hot environments, improves the usable range of described sensor.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model after step 1);
Fig. 2 is that the utility model is through step 2) after structural representation;
Fig. 3 is the structural representation of the utility model after step 3);
Fig. 4 is the structural representation of the utility model after step 4);
Fig. 5 is the structural representation of the utility model after step 5);
Fig. 6 is the structural representation of the utility model after step 6);
Fig. 7 is the structural representation of the utility model after step 7);
Fig. 8 is the structural representation of the utility model after step 8);
Fig. 9-10 is the utility model structural representations after step 9);
Figure 11-12 is the utility model structural representations after step 10);
Wherein: 1, the first insulation course 2, first silicon layer 3, second insulation course 4, second silicon layer 5, the 3rd insulation course 6, piezoresistance layer 7, pressure drag 8, passivation layer 9, fairlead 10, first mask layer 11, second mask layer.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only a part of embodiment of the present utility model, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Set forth a lot of detail in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when doing similar popularization without prejudice to when the utility model intension, and therefore the utility model is by the restriction of following public specific embodiment.
As shown in figure 12, the utility model discloses the MEMS pressure sensor of a kind of silicon island membrane structure, described sensor comprises the second silicon layer 4, the lower surface of described second silicon layer 4 is provided with silicon island membrane structure, the upper surface of described second silicon layer 4 is provided with the 3rd insulation course 5, the upper surface of described 3rd insulation course 5 is provided with four pressure drags, and four pressure drags carry out interconnected formation Wheatstone bridge by metal line, and the upper surface of described 3rd insulation course 5 is provided with fairlead 9.Described silicon island membrane structure comprises spaced left silicon island membrane module, middle silicon island membrane module and right silicon island membrane module, left silicon island membrane module, middle silicon island membrane module and right silicon island membrane module are the second insulation course 3 and the first silicon layer 2 from top to bottom, described left silicon island membrane module is identical with the structure of right silicon island membrane module, and the thickness of the first silicon layer 2 on described left silicon island membrane module and right silicon island membrane module is greater than the thickness of the first silicon layer 2 on the membrane module of middle silicon island.Form interval between described left silicon island membrane module and middle silicon island membrane module and between middle silicon island membrane module and right silicon island membrane module, described pressure drag 7 is relative with above-mentioned interval.
The MEMS pressure sensor method for making of described silicon island membrane structure comprises the steps:
1) cover at the lower surface of the first silicon layer 2 or form the first insulation course 1, cover at the upper surface of the first silicon layer 2 or form the second insulation course 3, cover at the upper surface of the second insulation course 3 or form the second silicon layer 4, above multilayer material forms SOI material, the handle layer layer of the first silicon layer 2(SOI material) thickness be greater than the thickness of the device layer layer of the second silicon layer 4(SOI material, as shown in Figure 1;
2) cover at the upper surface of the second silicon layer 4 or form the 3rd insulation course 5, further, the 3rd insulation course 5 is deposited on the upper surface of the second silicon layer 4 by thermal oxide or chemical vapour deposition technique, as shown in Figure 2;
3) cover at the upper surface of described 3rd insulation course 5 or form one deck polysilicon membrane, and described polysilicon membrane is carried out to the dense boron doping process of high dose, form piezoresistance layer 6, further, polysilicon membrane is formed at the upper surface of the 3rd insulation course 5 by chemical vapour deposition technique sedimentation, ion implantation technology or high-temperature diffusion process is adopted to carry out the dense boron doping of high dose to described polysilicon membrane, dense boron doping concentration is: 8 Ω-100 Ω/ (representation unit area), as shown in Figure 3;
4) apply one deck photoresist on the piezoresistance layer surface formed by the mode of spin coating, and carry out photoetching process, namely selectively exposed photoresist by light source, development is formed with the photoetching agent pattern of figure; Dry etch process is carried out to the piezoresistance layer carried out after photoetching process, four pressure drags 7 are formed after removing photoresist, the quantity of pressure drag can adjust according to specific design scheme, in the present embodiment, the quantity of pressure drag is 4, four pressure drags 7 in the maximum stress district of the described silicon island membrane structure for pressure-bearing, with perception largest deformation amount, as shown in Figure 4;
5) on pressure drag 7, sputter the metal level for connecting four pressure drags, chemical vapour deposition technique deposit passivation layer 8 is passed through at the upper surface of above-mentioned device, for the protection of device, the method preparing described passivation layer 8 preferentially selects Plasma Enhanced Chemical Vapor Deposition (PECVD) to be prepared, as shown in Figure 5;
6) utilize photoetching process and etching technics to etch passivation layer 8, the terminal of etching is the upper surface of the 3rd insulation course 5, forms the fairlead 9 of pressure drag 7, is exposed by the lead-in wire electrode of pressure drag 7, as shown in Figure 6;
7) carry out selective etch to the first insulation course 1, the first insulation course after etching forms the first mask layer 10 for etching silicon island membrane structure, as shown in Figure 7;
8) photoresist coating being carried out to the first insulation course 1 surface after selective etch, utilize photoetching process, forming the second mask layer 11 for etching when described island membrane structure technique is carried out, as shown in Figure 8;
9) after forming the two-layer mask layer for etching silicon island membrane structure, carry out an etching technics, the degree of depth of etching is the measuring silicon island elevation of silicon island membrane structure that will be formed, and removes the second mask layer 11, as shown in figs. 9-10 after etching into set depth;
10) another etching technics is carried out, etching depth is the remaining thickness of the first silicon layer 2 in step 9) after etching, until stop etching after being etched to the second insulation course 3, then part second insulation course 3 under remaining first insulation course 1 and pressure drag is removed, form the silicon island membrane structure being used for pressure-bearing, final mineralization pressure sensor, as depicted in figs. 11-12.Described second mask layer 11 is photoresist layer, and insulation course is oxide or nitride.
The utility model adopts monolithic SOI material to prepare pressure transducer, and chip size can accomplish 1mm × 1mm, and compared with the silicon cup type pressure transducer of same size, the tube core number on wafer has the raising on an order of magnitude; Adopt the sensing modes of silicon island membrane structure, measurement sensistivity improves; Preparation technology is simple, and sensor cost declines to a great extent; Utilizing SOI material device layer(second silicon layer) feature of layer thickness error little (film thickness error is at ± 0.5 μm) prepares sensing membrane, and measurement sensistivity, precision are improved; The problem that the photoresist that two mask etching mode avoids affects subsequent optical carving technology because once etching the large step of rear formation does not cover, not only can Simplified flowsheet step, also for high aspect ratio technique provides another kind of solution; In addition, the pressure drag of pressure transducer of the present utility model is formed on the insulating layer, can ensure normally to work under 300 DEG C of hot environments, improves the usable range of described sensor.。
Claims (3)
1. the MEMS pressure sensor of a silicon island membrane structure, it is characterized in that: described sensor comprises the second silicon layer (4), the lower surface of described second silicon layer (4) is provided with silicon island membrane structure, the upper surface of described second silicon layer (4) is provided with the 3rd insulation course (5), the upper surface of described 3rd insulation course (5) is provided with four pressure drags (7), four pressure drags (7) carry out interconnected formation Wheatstone bridge by metal line, and the upper surface of described 3rd insulation course (5) is provided with fairlead (9).
2. the MEMS pressure sensor of silicon island according to claim 1 membrane structure, it is characterized in that: described silicon island membrane structure comprises spaced left silicon island membrane module, middle silicon island membrane module and right silicon island membrane module, left silicon island membrane module, middle silicon island membrane module and right silicon island membrane module are the second insulation course (3) and the first silicon layer (2) from top to bottom, described left silicon island membrane module is identical with the structure of right silicon island membrane module, the thickness of the first silicon layer (2) on described left silicon island membrane module and right silicon island membrane module is greater than the thickness of the first silicon layer (2) on the membrane module of middle silicon island.
3. the MEMS pressure sensor of silicon island according to claim 2 membrane structure, it is characterized in that: form interval between described left silicon island membrane module and middle silicon island membrane module and between middle silicon island membrane module and right silicon island membrane module, described pressure drag (7) is relative with above-mentioned interval.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104864988A (en) * | 2015-06-10 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor in silicon island-diaphragm structure, and manufacturing method thereof |
| CN107673306A (en) * | 2017-08-12 | 2018-02-09 | 北方电子研究院安徽有限公司 | A kind of preparation method of MEMS pressure sensor |
| CN116046226A (en) * | 2023-01-07 | 2023-05-02 | 常州大学怀德学院 | MEMS pressure sensor for depth-to-width ratio etching |
-
2015
- 2015-06-10 CN CN201520397495.6U patent/CN204718717U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104864988A (en) * | 2015-06-10 | 2015-08-26 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor in silicon island-diaphragm structure, and manufacturing method thereof |
| CN104864988B (en) * | 2015-06-10 | 2017-07-04 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor of silicon island membrane structure and preparation method thereof |
| CN107673306A (en) * | 2017-08-12 | 2018-02-09 | 北方电子研究院安徽有限公司 | A kind of preparation method of MEMS pressure sensor |
| CN107673306B (en) * | 2017-08-12 | 2019-06-21 | 北方电子研究院安徽有限公司 | A kind of preparation method of MEMS pressure sensor |
| CN116046226A (en) * | 2023-01-07 | 2023-05-02 | 常州大学怀德学院 | MEMS pressure sensor for depth-to-width ratio etching |
| CN116046226B (en) * | 2023-01-07 | 2023-12-29 | 厚盟深科(杭州)科技有限公司 | MEMS pressure sensor for depth-to-width ratio etching |
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Granted publication date: 20151021 Effective date of abandoning: 20170704 |
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| AV01 | Patent right actively abandoned |