CN204480099U - A kind of start-up circuit of band-gap reference - Google Patents
A kind of start-up circuit of band-gap reference Download PDFInfo
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- CN204480099U CN204480099U CN201520181258.6U CN201520181258U CN204480099U CN 204480099 U CN204480099 U CN 204480099U CN 201520181258 U CN201520181258 U CN 201520181258U CN 204480099 U CN204480099 U CN 204480099U
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Abstract
The utility model relates to a kind of start-up circuit of band-gap reference, the equal ground connection in one end of resistance R3, electric capacity C1 and electric capacity C2, the grid end of metal-oxide-semiconductor M7 is connected rear ground connection with source, the grid end of the other end of resistance R3, the drain terminal of metal-oxide-semiconductor M4 and metal-oxide-semiconductor M5 is connected to d point, the drain terminal of metal-oxide-semiconductor M5, the grid end of metal-oxide-semiconductor M6, the other end of electric capacity C1 and the drain terminal of metal-oxide-semiconductor M7 are connected to e point, and the source of metal-oxide-semiconductor M4, metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6 all and V
dDpower supply connects, the grid termination V of metal-oxide-semiconductor M4
dDpower supply, the drain terminal of metal-oxide-semiconductor M6 and the other end of electric capacity C2 are all connected with band-gap reference.All the time there is a quiescent dissipation, technical matters that chip area is large in the start-up circuit that the utility model solves existing band-gap reference.After band-gap reference has started, the utility model start-up circuit has not had quiescent current, saves power consumption.
Description
Technical field
The utility model relates to a kind of start-up circuit of band-gap reference.
Background technology
As shown in Figure 1, the start-up circuit of band-gap reference is by resistance R1 and R2, and metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, a metal-oxide-semiconductor M3 and phase inverter forms.When band-gap reference is not activated, in band-gap reference, the grid voltage I_feedback mirror image of certain bias current pipe is that zero, a point is drawn high by resistance R1 to the electric current of M1, and a point is high level, so M2 conducting.After M2 conducting, b point is drawn as low level, b point is after phase inverter, and c point is high level, so M3 conducting.M3 draws electric current from band-gap reference, makes band-gap reference break away from initial state and starts.After band-gap reference starts, I_feedback mirror image is to M1 electric current, and the conducting of M1 pipe also drags down a point, a point drags down rear M2 and turns off, and b point is leapt high by R2, and after phase inverter, c point is the end, M3 turns off, and like this after band-gap reference has started, start-up circuit does not affect band-gap reference.But because metal-oxide-semiconductor M1 conducting, so there is an electric current to flow through M1 always, there is power consumption in start-up circuit.In order to reduce this electric current, reduce power consumption, existing way is exactly the resistance increasing resistance R1.Although the quiescent dissipation of start-up circuit can be reduced by the resistance increasing resistance R1, also there is following shortcoming:
1, still there is a quiescent dissipation in start-up circuit;
2, the resistance of starting resistance R1 is comparatively large, takies more domain layout area.
Summary of the invention
In order to the start-up circuit solving existing band-gap reference exists a quiescent dissipation, technical matters that chip area is large all the time, the utility model provides a kind of start-up circuit not having the band-gap reference of quiescent current.
Technical solution of the present utility model:
A kind of start-up circuit of band-gap reference, its special character is: comprise metal-oxide-semiconductor M4, metal-oxide-semiconductor M5, metal-oxide-semiconductor M6, metal-oxide-semiconductor M7, resistance R3, electric capacity C1 and electric capacity C2, described resistance R3, the equal ground connection in one end of electric capacity C1 and electric capacity C2, the grid end of described metal-oxide-semiconductor M7 is connected rear ground connection with source, the other end of described resistance R3, the drain terminal of metal-oxide-semiconductor M4 and the grid end of metal-oxide-semiconductor M5 are connected to d point, the drain terminal of described metal-oxide-semiconductor M5, the grid end of metal-oxide-semiconductor M6, the other end of electric capacity C1 and the drain terminal of metal-oxide-semiconductor M7 are connected to e point, described metal-oxide-semiconductor M4, the source of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6 all and V
dDpower supply connects, the grid termination V of described metal-oxide-semiconductor M4
dDpower supply, the drain terminal of described metal-oxide-semiconductor M6 and the other end of electric capacity C2 are all connected with band-gap reference, and the breadth length ratio of described metal-oxide-semiconductor M5 is less than the breadth length ratio of metal-oxide-semiconductor M6.
Above-mentioned electric capacity C1 and/or electric capacity C2 adopts metal-oxide-semiconductor electric capacity.
The breadth length ratio of metal-oxide-semiconductor M6 is 50-300 times of the breadth length ratio of metal-oxide-semiconductor M5.
The breadth length ratio of above-mentioned metal-oxide-semiconductor M5 is 0.6u/300u, and the breadth length ratio of described metal-oxide-semiconductor M6 is 2u/6u.
A kind of start-up circuit of band-gap reference, its special character is: comprise metal-oxide-semiconductor M8, metal-oxide-semiconductor M9, metal-oxide-semiconductor M10, metal-oxide-semiconductor M11, metal-oxide-semiconductor M0, electric capacity C3 and electric capacity C4, the source of described metal-oxide-semiconductor M0, the equal ground connection in one end of electric capacity C3 and electric capacity C4, the grid end of described metal-oxide-semiconductor M11 is connected rear ground connection with source, the drain terminal of described metal-oxide-semiconductor M8, the grid end of metal-oxide-semiconductor M9 and the drain terminal of metal-oxide-semiconductor M0 are connected to f point, the drain terminal of described metal-oxide-semiconductor M9, the grid end of metal-oxide-semiconductor M10, the other end of electric capacity C3 and the drain terminal of metal-oxide-semiconductor M11 are connected to g point, described metal-oxide-semiconductor M8, the source of metal-oxide-semiconductor M9 and metal-oxide-semiconductor M10 all and V
dDpower supply connects, the grid termination V of described metal-oxide-semiconductor M8
dDpower supply, the drain terminal of described metal-oxide-semiconductor M10 and the other end of electric capacity C4 are all connected with band-gap reference, and in the grid termination band-gap reference of described metal-oxide-semiconductor M0, the breadth length ratio of the grid voltage I_feedback of bigoted tube of current, described metal-oxide-semiconductor M9 is less than the breadth length ratio of metal-oxide-semiconductor M10.
Above-mentioned electric capacity C3 and/or electric capacity C4 adopts metal-oxide-semiconductor electric capacity.
The breadth length ratio of metal-oxide-semiconductor M10 is 50-300 times of the breadth length ratio of metal-oxide-semiconductor M9.
The breadth length ratio of above-mentioned metal-oxide-semiconductor M9 is 0.6u/300u, and the breadth length ratio of described metal-oxide-semiconductor M10 is 2u/6u.
The advantage that the utility model has:
1, after band-gap reference has started, the utility model start-up circuit does not have quiescent current, saves power consumption.
2, there is no the resistance of large resistance in the utility model start-up circuit, save chip area.
Accompanying drawing explanation
Fig. 1 is the start-up circuit schematic diagram of typical band-gap reference;
Fig. 2 is a kind of start-up circuit structural drawing of the present utility model;
Fig. 3 is another kind of start-up circuit structural drawing of the present utility model.
Embodiment
Circuit for starting up band gap basis of the present utility model is shown in Fig. 2.At V
dDwhen being not activated, V
dD, d point and e point be all low level, M5 and M6 is off state.At V
dDfrom 0 to V
dDin the process started, M5 and M6 can slowly conducting.When circuit design, M5 is the pipe that a breadth length ratio is very little, such as 0.6u/300u; Because the breadth length ratio of M5 is very little, so at V
dDin uphill process, to the charging of e point slowly, e point keeps low level to M5, and M6 in this process can conducting.The breadth length ratio of M6 is relatively large, such as 2u/6u; Can certainly select other values, this needs to determine according to design.After M6 conducting, by VS1, electric current is rushed to band-gap reference, make it break away from degenerate state and start.After band-gap reference has started, V
dDalso remain on constant high level, d point draws as low level by R3, M5 conducting, in comparatively growth process e point slowly punching be high level, such M6 turns off.M6 closes and has no progeny, and do not work to band-gap reference, startup completes.Fig. 3 is another kind of way of realization of the present utility model.V
dDwhen being not activated, V
dD, f point and g point be all low level, M9 and M10 is off state.At V
dDfrom 0 to V
dDin the process started, M9 and M10 can slowly conducting.When circuit design, M9 is the pipe that a breadth length ratio is very little, such as 0.6u/300u; Because the breadth length ratio of M9 is very little, so at V
dDin uphill process, to the charging of g point slowly, g point keeps low level to M9, and M10 in this process can conducting.The breadth length ratio of M10 is relatively large, such as 2u/6u; After M10 conducting, by VS1 to band-gap reference charging stream, make it break away from degenerate state and start.After band-gap reference has started, VDD remains on constant high level, and band-gap reference has electric current to flow through to M0, M0 by I_feedback image current, f point is drawn as low level, M9 conducting, in comparatively growth process g point slowly punching be high level, such M10 shutoff.M10 closes and has no progeny, and do not work to band-gap reference, startup completes.
Claims (8)
1. the start-up circuit of a band-gap reference, it is characterized in that: comprise metal-oxide-semiconductor M4, metal-oxide-semiconductor M5, metal-oxide-semiconductor M6, metal-oxide-semiconductor M7, resistance R3, electric capacity C1 and electric capacity C2, described resistance R3, the equal ground connection in one end of electric capacity C1 and electric capacity C2, the grid end of described metal-oxide-semiconductor M7 is connected rear ground connection with source, the other end of described resistance R3, the drain terminal of metal-oxide-semiconductor M4 and the grid end of metal-oxide-semiconductor M5 are connected to d point, the drain terminal of described metal-oxide-semiconductor M5, the grid end of metal-oxide-semiconductor M6, the other end of electric capacity C1 and the drain terminal of metal-oxide-semiconductor M7 are connected to e point, described metal-oxide-semiconductor M4, the source of metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6 all and V
dDpower supply connects, the grid termination V of described metal-oxide-semiconductor M4
dDpower supply, the drain terminal of described metal-oxide-semiconductor M6 and the other end of electric capacity C2 are all connected with band-gap reference, and the breadth length ratio of described metal-oxide-semiconductor M5 is less than the breadth length ratio of metal-oxide-semiconductor M6.
2. the start-up circuit of band-gap reference according to claim 1, is characterized in that: described electric capacity C1 and/or electric capacity C2 adopts metal-oxide-semiconductor electric capacity.
3. the start-up circuit of band-gap reference according to claim 1 and 2, is characterized in that: the breadth length ratio of metal-oxide-semiconductor M6 is 50-300 times of the breadth length ratio of metal-oxide-semiconductor M5.
4. the start-up circuit of band-gap reference according to claim 3, is characterized in that: the breadth length ratio of described metal-oxide-semiconductor M5 is 0.6u/300u, and the breadth length ratio of described metal-oxide-semiconductor M6 is 2u/6u.
5. the start-up circuit of a band-gap reference, it is characterized in that: comprise metal-oxide-semiconductor M8, metal-oxide-semiconductor M9, metal-oxide-semiconductor M10, metal-oxide-semiconductor M11, metal-oxide-semiconductor M0, electric capacity C3 and electric capacity C4, the source of described metal-oxide-semiconductor M0, the equal ground connection in one end of electric capacity C3 and electric capacity C4, the grid end of described metal-oxide-semiconductor M11 is connected rear ground connection with source, the drain terminal of described metal-oxide-semiconductor M8, the grid end of metal-oxide-semiconductor M9 and the drain terminal of metal-oxide-semiconductor M0 are connected to f point, the drain terminal of described metal-oxide-semiconductor M9, the grid end of metal-oxide-semiconductor M10, the other end of electric capacity C3 and the drain terminal of metal-oxide-semiconductor M11 are connected to g point, described metal-oxide-semiconductor M8, the source of metal-oxide-semiconductor M9 and metal-oxide-semiconductor M10 all and V
dDpower supply connects, the grid termination V of described metal-oxide-semiconductor M8
dDpower supply, the drain terminal of described metal-oxide-semiconductor M10 and the other end of electric capacity C4 are all connected with band-gap reference, and in the grid termination band-gap reference of described metal-oxide-semiconductor M0, the breadth length ratio of the grid voltage I_feedback of bigoted tube of current, described metal-oxide-semiconductor M9 is less than the breadth length ratio of metal-oxide-semiconductor M10.
6. the start-up circuit of band-gap reference according to claim 5, is characterized in that: described electric capacity C3 and/or electric capacity C4 adopts metal-oxide-semiconductor electric capacity.
7. the start-up circuit of the band-gap reference according to claim 5 or 6, is characterized in that: the breadth length ratio of metal-oxide-semiconductor M10 is 50-300 times of the breadth length ratio of metal-oxide-semiconductor M9.
8. the start-up circuit of band-gap reference according to claim 7, is characterized in that: the breadth length ratio of described metal-oxide-semiconductor M9 is 0.6u/300u, and the breadth length ratio of described metal-oxide-semiconductor M10 is 2u/6u.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520181258.6U CN204480099U (en) | 2015-03-27 | 2015-03-27 | A kind of start-up circuit of band-gap reference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520181258.6U CN204480099U (en) | 2015-03-27 | 2015-03-27 | A kind of start-up circuit of band-gap reference |
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| CN204480099U true CN204480099U (en) | 2015-07-15 |
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| CN201520181258.6U Withdrawn - After Issue CN204480099U (en) | 2015-03-27 | 2015-03-27 | A kind of start-up circuit of band-gap reference |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104714594A (en) * | 2015-03-27 | 2015-06-17 | 西安华芯半导体有限公司 | Starting circuit for band-gap reference |
| CN111208859A (en) * | 2020-02-26 | 2020-05-29 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
-
2015
- 2015-03-27 CN CN201520181258.6U patent/CN204480099U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104714594A (en) * | 2015-03-27 | 2015-06-17 | 西安华芯半导体有限公司 | Starting circuit for band-gap reference |
| CN104714594B (en) * | 2015-03-27 | 2016-03-23 | 西安紫光国芯半导体有限公司 | A kind of start-up circuit of band-gap reference |
| CN111208859A (en) * | 2020-02-26 | 2020-05-29 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
| CN111208859B (en) * | 2020-02-26 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150715 Effective date of abandoning: 20160323 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |