CN105356437A - Anti-surge circuit - Google Patents
Anti-surge circuit Download PDFInfo
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- CN105356437A CN105356437A CN201510737420.2A CN201510737420A CN105356437A CN 105356437 A CN105356437 A CN 105356437A CN 201510737420 A CN201510737420 A CN 201510737420A CN 105356437 A CN105356437 A CN 105356437A
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Abstract
The invention discloses an anti-surge circuit comprising a high-power resistor R1, an MOS tube Q1, a resistor R2, a resistor R3, a resistor R4, a voltage-regulator tube ZD1, a capacitor C1, an electrolytic capacitor EC1, a capacitor C3, a capacitor C2, a bridge pile BD1, and a fuse F1. The anti-surge circuit is characterized in that one end of the capacitor C1 is connected with the positive electrode of the electrolytic capacitor EC1, one end of the resistor R4 and the positive electrode of the bridge pile BD1; the other end of the capacitor C1, the negative electrode of the electrolytic capacitor EC1, the drain of the MOS tube Q1 and one end of the resistor R1 are grounded; the other end of the resistor R1 is connected with the negative electrode of the bridge pile BD1, the source of the MOS tube Q1, one end of the capacitor C2, the anode of the voltage-regulator tube ZD1, one end of the capacitor C3 and one end of the resistor R3; the other end of the capacitor C2 is connected with the gate of the MOS tube Q1, the cathode of the voltage-regulator tube ZD1 and one end of the resistor R2; and the other end of the resistor R2 is connected with the other end of the resistor R4, the other end of the resistor R3 and the other end of the capacitor C3. The surge current can be suppressed for both fast switching on/off and heat engine switching on/off, and therefore, the impact of electronic products to the power grid is reduced greatly.
Description
Technical field
The present invention relates to circuit field, specifically a kind of anti-surge circuit.
Background technology
The NTC surge current suppression circuit of frequent use is simply widely used due to it, and its circuit structure as shown in Figure 1, but makes effect in many applications undesirable due to its power consumption and the effect of heat engine unrestraint surge.Along with present electronic product is more and more higher to surge current requirements, the circuit of this structure can not meet the demands.
Summary of the invention
The present invention is to solve the problems referred to above that prior art exists, aim to provide a kind of follow-on anti-surge circuit, more effectively can either reduce surge current, greatly reduce the impact to electrical network, simultaneously low in energy consumption, and the effect of heat engine unrestraint surge can not be produced.
For solving the problem, the present invention is by the following technical solutions: a kind of anti-surge circuit, comprise high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1 and fuse F1, it is characterized in that the positive pole of a termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3 and one end of resistance R3, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the other end connecting resistance R4 of resistance R2, the other end of resistance R3 and electric capacity C3.
A kind of anti-surge circuit of the present invention, when startup, because on electrochemical capacitor EC1 and electric capacity C1, voltage is 0, metal-oxide-semiconductor Q1 turns off, input voltage is charged to electrochemical capacitor EC1 and electric capacity C1 by high-power resistance R1, so electric current is determined by resistance R1, resistance R1 resistance is larger, surge current is less, when the voltage on electrochemical capacitor EC1 reaches some values, when metal-oxide-semiconductor Q1 grid voltage reaches the threshold voltage of metal-oxide-semiconductor, metal-oxide-semiconductor Q1 opens, short-circuit resistance R1, startup completes, after metal-oxide-semiconductor Q1 conducting, between the DS of metal-oxide-semiconductor Q1, voltage is very little, loss is very low.Electric capacity C2, electric capacity C3 can be used for regulating the rise time of metal-oxide-semiconductor Q1 grid voltage, control the service time of metal-oxide-semiconductor Q1, and voltage-stabiliser tube ZD1 can be used for protection metal-oxide-semiconductor Q1 grid voltage and be no more than its limit value.Due to the existence of resistance R1, what surge current can be done is very little, and due to the existence of metal-oxide-semiconductor Q1, makes whole electronic product when normal work, and efficiency is unaffected.
The present invention also will provide the anti-surge circuit of another kind of structure, comprises high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1, fuse F1, diode D1, triode Q2 and resistance R5, is characterized in that the positive pole of a termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3, one end of resistance R3 and one end of resistance R5, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the negative electrode of another terminating diode D1 of resistance R2 and the source electrode of triode Q2, the other end of the base stage connecting resistance R5 of triode Q2, the collector electrode connecting resistance R4 of triode Q2, the other end of resistance R3 and electric capacity C3.
The technical program is the improvement done on last technical scheme basis, add one by diode D1, the grid leadage circuit that triode Q2 and resistance R5 is formed, its Main Function is to be used for releasing when turning off the voltage of metal-oxide-semiconductor Q1 grid, work as switching off input voltage, triode Q2 base voltage first declines, cause triode Q2 conducting, metal-oxide-semiconductor Q1 grid voltage is by triode Q2 repid discharge, triode Q2 turns off fast, in time opening input voltage, input still must be charged to electrochemical capacitor EC1 and electric capacity C1 by resistance R1, so fast open shutdown better can be realized by this circuit, and due to the existence of metal-oxide-semiconductor Q1, make whole electronic product when normal work, efficiency is unaffected, be exactly fast open shutdown and heat engine switching on and shutting down, surge current is the same can be inhibited, thus greatly reduce the impact of electronic product to electrical network.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
Fig. 1 is the circuit diagram of existing NTC surge current suppression circuit.
Fig. 2 is a kind of circuit structure diagram of anti-surge circuit of the present invention.
Fig. 3 is the another kind of circuit structure diagram of anti-surge circuit of the present invention.
Embodiment
Fig. 1 is existing NTC surge current suppression circuit, describes, and do not repeat them here before its defect.
With reference to Fig. 2, a kind of anti-surge circuit of the present invention, comprise high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1 and fuse F1, the positive pole of the one termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3 and one end of resistance R3, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the other end connecting resistance R4 of resistance R2, the other end of resistance R3 and electric capacity C3.
A kind of anti-surge circuit of the present invention, its operation principle is as follows: when startup, because on electrochemical capacitor EC1 and electric capacity C1, voltage is 0, metal-oxide-semiconductor Q1 turns off, input voltage is charged to electrochemical capacitor EC1 and electric capacity C1 by high-power resistance R1, so electric current is determined by resistance R1, resistance R1 resistance is larger, surge current is less, when the voltage on electrochemical capacitor EC1 reaches some values, when metal-oxide-semiconductor Q1 grid voltage reaches the threshold voltage of metal-oxide-semiconductor, metal-oxide-semiconductor Q1 opens, short-circuit resistance R1, startup completes, after metal-oxide-semiconductor Q1 conducting, between the DS of metal-oxide-semiconductor Q1, voltage is very little, loss is very low.Electric capacity C2, electric capacity C3 can be used for regulating the rise time of metal-oxide-semiconductor Q1 grid voltage, control the service time of metal-oxide-semiconductor Q1, and voltage-stabiliser tube ZD1 can be used for protection metal-oxide-semiconductor Q1 grid voltage and be no more than its limit value.Due to the existence of resistance R1, what surge current can be done is very little, and due to the existence of metal-oxide-semiconductor Q1, makes whole electronic product when normal work, and efficiency is unaffected.
With reference to Fig. 3, the anti-surge circuit of another kind of structure of the present invention, comprises high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1, fuse F1, diode D1, the positive pole of the one termination electrochemical capacitor EC1 of triode Q2 and resistance R5, described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3, one end of resistance R3 and one end of resistance R5, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the negative electrode of another terminating diode D1 of resistance R2 and the source electrode of triode Q2, the other end of the base stage connecting resistance R5 of triode Q2, the collector electrode connecting resistance R4 of triode Q2, the other end of resistance R3 and electric capacity C3.
Present embodiment is the improvement on Fig. 2 execution mode basis, add one by diode D1, the grid leadage circuit that triode Q2 and resistance R5 is formed, its Main Function is to be used for releasing when turning off the voltage of metal-oxide-semiconductor Q1 grid, work as switching off input voltage, triode Q2 base voltage first declines, cause triode Q2 conducting, metal-oxide-semiconductor Q1 grid voltage is by triode Q2 repid discharge, triode Q2 turns off fast, in time opening input voltage, input still must be charged to electrochemical capacitor EC1 and electric capacity C1 by resistance R1, so fast open shutdown better can be realized by this circuit, and due to the existence of metal-oxide-semiconductor Q1, make whole electronic product when normal work, efficiency is unaffected, be exactly fast open shutdown and heat engine switching on and shutting down, surge current is the same can be inhibited, thus greatly reduce the impact of electronic product to electrical network.
It is understood that above-described embodiment is just to explanation of the present invention, instead of limitation of the present invention, any innovation and creation do not exceeded in spirit of the present invention, all fall within protection scope of the present invention.
Claims (2)
1. an anti-surge circuit, comprise high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1 and fuse F1, it is characterized in that the positive pole of a termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3 and one end of resistance R3, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the other end connecting resistance R4 of resistance R2, the other end of resistance R3 and electric capacity C3.
2. an anti-surge circuit, comprises high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1, fuse F1, diode D1, triode Q2 and resistance R5, is characterized in that the positive pole of a termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3, one end of resistance R3 and one end of resistance R5, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the negative electrode of another terminating diode D1 of resistance R2 and the source electrode of triode Q2, the other end of the base stage connecting resistance R5 of triode Q2, the collector electrode connecting resistance R4 of triode Q2, the other end of resistance R3 and electric capacity C3.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510737420.2A CN105356437B (en) | 2015-11-04 | 2015-11-04 | A kind of anti-surge circuit |
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| CN201510737420.2A CN105356437B (en) | 2015-11-04 | 2015-11-04 | A kind of anti-surge circuit |
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| CN105356437A true CN105356437A (en) | 2016-02-24 |
| CN105356437B CN105356437B (en) | 2018-09-25 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026626A (en) * | 2016-06-29 | 2016-10-12 | 浪潮集团有限公司 | Surge current suppressor based on RC time delay circuit |
| CN106712562A (en) * | 2016-12-15 | 2017-05-24 | 宁波央腾汽车电子有限公司 | Inductive load circuit and method of eliminating current spikes |
| CN109245073A (en) * | 2018-09-28 | 2019-01-18 | 深圳市崧盛电子股份有限公司 | A kind of control circuit and power supply inhibiting power voltage surge electric current |
| CN109818341A (en) * | 2019-03-12 | 2019-05-28 | 欧普照明股份有限公司 | A kind of surge current suppression circuit |
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| US6657841B1 (en) * | 1999-09-03 | 2003-12-02 | Moeller Gmbh | Circuit arrangement for the overvoltage protection of a power transistor for controlling an inductive load |
| CN103904631A (en) * | 2012-12-31 | 2014-07-02 | 海洋王（东莞）照明科技有限公司 | Protection circuit |
| CN204068682U (en) * | 2014-08-23 | 2014-12-31 | 成都四威航空电源有限公司 | A kind of high-power low-loss surge restraint circuit |
| CN204089183U (en) * | 2014-08-07 | 2015-01-07 | 广州海格通信集团股份有限公司 | A kind of can the Anti-surging mains switch protective circuit of frequent |
| CN205081465U (en) * | 2015-11-04 | 2016-03-09 | 浙江榆阳电子有限公司 | Anti -surge circuit |
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2015
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657841B1 (en) * | 1999-09-03 | 2003-12-02 | Moeller Gmbh | Circuit arrangement for the overvoltage protection of a power transistor for controlling an inductive load |
| CN103904631A (en) * | 2012-12-31 | 2014-07-02 | 海洋王（东莞）照明科技有限公司 | Protection circuit |
| CN204089183U (en) * | 2014-08-07 | 2015-01-07 | 广州海格通信集团股份有限公司 | A kind of can the Anti-surging mains switch protective circuit of frequent |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026626A (en) * | 2016-06-29 | 2016-10-12 | 浪潮集团有限公司 | Surge current suppressor based on RC time delay circuit |
| CN106712562A (en) * | 2016-12-15 | 2017-05-24 | 宁波央腾汽车电子有限公司 | Inductive load circuit and method of eliminating current spikes |
| CN109245073A (en) * | 2018-09-28 | 2019-01-18 | 深圳市崧盛电子股份有限公司 | A kind of control circuit and power supply inhibiting power voltage surge electric current |
| WO2020062817A1 (en) * | 2018-09-28 | 2020-04-02 | 深圳市崧盛电子股份有限公司 | Control circuit for suppressing surge voltage and current of power supply, and power supply |
| CN109245073B (en) * | 2018-09-28 | 2020-06-23 | 深圳市崧盛电子股份有限公司 | Control circuit for suppressing surge voltage and current of power supply and power supply |
| CN109818341A (en) * | 2019-03-12 | 2019-05-28 | 欧普照明股份有限公司 | A kind of surge current suppression circuit |
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| Publication number | Publication date |
|---|---|
| CN105356437B (en) | 2018-09-25 |
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Address after: No. 656, Tongde Road, Tongxiang Economic Development Zone, Tongxiang City, Jiaxing City, Zhejiang Province, 314500 Patentee after: Zhejiang Yuyang Electronics Co., Ltd. Address before: No. 656, Tongde Road, Tongxiang Economic Development Zone, Tongxiang City, Jiaxing City, Zhejiang Province, 314500 Patentee before: ZHEJIANG YUYANG ELECTRONICS CO.,LTD. |