CN103138315B - Switch circuit - Google Patents
Switch circuit Download PDFInfo
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- CN103138315B CN103138315B CN201110389205.XA CN201110389205A CN103138315B CN 103138315 B CN103138315 B CN 103138315B CN 201110389205 A CN201110389205 A CN 201110389205A CN 103138315 B CN103138315 B CN 103138315B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 139
- 238000007599 discharging Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 101001079904 Homo sapiens Hyaluronan and proteoglycan link protein 1 Proteins 0.000 description 7
- 102100028084 Hyaluronan and proteoglycan link protein 1 Human genes 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 description 5
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Abstract
The invention discloses a switch circuit which comprises a first N-type metal oxide semiconductor (MOS) tube, a first resistor, a first P-type MOS tube, a second P-type MOS tube, a second resistor, a second N-type MOS tube and a third N-type MOS tube. A grid electrode of the first N-type MOS tube is used for receiving a first voltage control signal, and a source electrode of the first N-type MOS tube is connected with first reference voltage. A first end of the first resistor is connected with a drain electrode of the first N-type MOS tube. A drain electrode of the first P-type MOS tube is connected with a second end of the first resistor, and a source electrode of the first P-type MOS tube is connected with second reference voltage. A grid electrode of the second P-type MOS tube is connected between the drain electrode of the first N-type MOS tube and the first end of the first resistor, and a source electrode of the second P-type MOS tube is connected with the second reference voltage. A first end of the second resistor is connected with a drain electrode of the second P-type MOS tube. A grid electrode of the second N-type MOS tube is used for receiving a second voltage control signal, and a drain electrode of the second N-type MOS tube is connected with a second end of the second resistor. A grid electrode of the third N-type MOS tube and a grid electrode of the first P-type MOS tube are connected between the second end of the second resistor and the drain electrode of the second N-type MOS tube. A source electrode of the third N-type MOS tube is connected with a source electrode of the second N-type MOS tube. Through the way, the switch circuit can improve a response speed of a switch and reduce consumption of electric quantity.
Description
Technical field
The present invention relates to field of battery management, particularly relate to a kind of switching circuit.
Background technology
In battery management system, in the management system of particularly many string high power batteries, battery there will be in discharge process put, the situation of overcurrent or short circuit, the protection therefore during battery discharge is even more important.Such as, discharge the energy of internal reservoir at battery, after cell voltage reaches certain value, put if continuation electric discharge will cause battery to cross.Battery is crossed to put and inner pressure of battery may be caused to raise, capacity attenuation, reduces the life-span of battery.In addition, battery short circuit is also a kind of very serious phenomenon, if battery short circuit protection not in time, battery will there will be leakage, the danger that even can set off an explosion.
In prior art, battery management system adopts power MOS pipe (Metal Oxid Semiconductor, field-effect transistor) as control switch usually, and then realizes opening and shutting off of battery discharge path.Refer to Fig. 1, Fig. 1 is the circuit structure diagram of a kind of switching circuit of the prior art.As shown in Figure 1, this switching circuit comprises N-type metal-oxide-semiconductor M1 and resistance R1, and the grid of N-type metal-oxide-semiconductor M1 receives a voltage control signal CTRL.When signal CTRL is high level, N-type metal-oxide-semiconductor M1 conducting.When signal CTRL is low level, N-type metal-oxide-semiconductor M1 ends disconnection.Wherein, N-type metal-oxide-semiconductor M1 is high-power MOS tube.In the disconnection process of this switching circuit, the electric charge that between the grid of N-type metal-oxide-semiconductor M1 and source electrode, junction capacitance stores, by resistance R1 slow releasing, causes opening speed comparatively slow, can not disconnect battery discharge path fast, more likely burn out high power switch metal-oxide-semiconductor.
Refer to Fig. 2, Fig. 2 is the circuit structure diagram of another kind of switching circuit of the prior art.As shown in Figure 2, this switching circuit comprises N-type metal-oxide-semiconductor Q1, N-type metal-oxide-semiconductor M1 and resistance R1.Wherein, the power of N-type metal-oxide-semiconductor M1 is greater than the power of N-type metal-oxide-semiconductor Q1.The grid of N-type metal-oxide-semiconductor Q1 receives a voltage control signal CTRL.When signal CTRL is high level, N-type metal-oxide-semiconductor Q1 conducting, N-type metal-oxide-semiconductor M1 ends disconnection.When signal CTRL is low level, N-type metal-oxide-semiconductor Q1 ends disconnection, N-type metal-oxide-semiconductor M1 conducting.Because N-type metal-oxide-semiconductor Q1 is low power metal-oxide-semiconductor, the junction capacitance of its grid and source electrode is smaller, thus its conducting and opening time shorter.But, when N-type metal-oxide-semiconductor M1 end disconnect time, N-type metal-oxide-semiconductor Q1 conducting, cause reference voltage VCC to form path by resistance R1, generation current, therefore causes kwh loss, particularly serious when this problem occurs in battery Cross prevention.
Therefore, need to provide a kind of switching circuit, the slow and kwh loss problem with the response speed solving prior art switching circuit.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of switching circuit, to improve the response speed of switching circuit and to reduce kwh loss.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of switching circuit, comprising: the first N-type metal-oxide-semiconductor, the grid of the first N-type metal-oxide-semiconductor receives the first voltage control signal, and the source electrode of the first N-type metal-oxide-semiconductor connects the first reference voltage; First resistance, the first end of the first resistance connects the drain electrode of the first N-type metal-oxide-semiconductor; One P type metal-oxide-semiconductor, the drain electrode of a P type metal-oxide-semiconductor connects the second end of the first resistance, and the source electrode of a P type metal-oxide-semiconductor connects the second reference voltage, and the second reference voltage is higher than the first reference voltage; 2nd P type metal-oxide-semiconductor, between the drain electrode that the grid of the 2nd P type metal-oxide-semiconductor is connected to the first N-type metal-oxide-semiconductor and the first end of the first resistance, the source electrode of the 2nd P type metal-oxide-semiconductor connects the second reference voltage; Second resistance, the first end of the second resistance connects the drain electrode of the 2nd P type metal-oxide-semiconductor; Second N-type metal-oxide-semiconductor, the grid of the second N-type metal-oxide-semiconductor receives the second voltage control signal, the second voltage control signal and the first voltage control signal anti-phase each other, the drain electrode of the second N-type metal-oxide-semiconductor connects the second end of the second resistance; 3rd N-type metal-oxide-semiconductor, the grid of the 3rd N-type metal-oxide-semiconductor and the grid of a P type metal-oxide-semiconductor are connected between the second end of the second resistance and the drain electrode of the second N-type metal-oxide-semiconductor, the source electrode of the 3rd N-type metal-oxide-semiconductor connects the source electrode of the second N-type metal-oxide-semiconductor, wherein, the power of the one P type metal-oxide-semiconductor, the 2nd P type metal-oxide-semiconductor, the first N-type MOS and the second N-type metal-oxide-semiconductor is all less than the power of the 3rd N-type MOS type, and utilizes the 3rd N-type metal-oxide-semiconductor to control unlatching and the disconnection of battery discharging circuit.
According to one preferred embodiment of the present invention, the high level of the first voltage control signal is less than or equal to the second reference voltage.
According to one preferred embodiment of the present invention, the high level of the first voltage control signal is greater than the first reference voltage.
According to one preferred embodiment of the present invention, the first reference voltage is ground voltage.
According to one preferred embodiment of the present invention, switching circuit comprises inverter further, the input of inverter receives source voltage control signal, the output of inverter connects one in the grid of the first N-type metal-oxide-semiconductor and the grid of the second N-type metal-oxide-semiconductor, another the further reception source voltage control signal in the grid of the first N-type metal-oxide-semiconductor and the grid of the second N-type metal-oxide-semiconductor.
The invention has the beneficial effects as follows: the situation being different from prior art, switching circuit of the present invention can respond fast and effectively reduce kwh loss.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of a kind of switching circuit of the prior art;
Fig. 2 is the circuit structure diagram of another kind of switching circuit of the prior art; And
Fig. 3 is the circuit structure diagram of switching circuit according to a first embodiment of the present invention.
Embodiment
Refer to Fig. 3, Fig. 3 is the circuit structure diagram of switching circuit according to a first embodiment of the present invention.As shown in Figure 3, switching circuit of the present invention comprises: the first N-type metal-oxide-semiconductor Q1, the first resistance R1, a P type metal-oxide-semiconductor Q2, the 2nd P type metal-oxide-semiconductor Q3, the second resistance R2, the second N-type metal-oxide-semiconductor Q4, the 3rd N-type metal-oxide-semiconductor M1 and inverter U1.
In the present embodiment, the grid of the first N-type metal-oxide-semiconductor Q1 receives the first voltage control signal CTRL1, the source electrode of the first N-type metal-oxide-semiconductor Q1 connects the first reference voltage VCC1, the drain electrode of the first N-type metal-oxide-semiconductor Q1 connects the first end of the first resistance R1, and second end of the first resistance R1 connects the drain electrode of a P type metal-oxide-semiconductor Q2.The source electrode of the one P type metal-oxide-semiconductor Q2 connects the second reference voltage VCC2.In the present embodiment, the second reference voltage VCC2 is higher than the first reference voltage VCC1, and the first reference voltage VCC1 is preferably ground voltage.
The source electrode of the 2nd P type metal-oxide-semiconductor Q3 connects the second reference voltage VCC2, between the drain electrode that the grid of the 2nd P type metal-oxide-semiconductor Q3 is connected to the first N-type metal-oxide-semiconductor Q1 and the first end of the first resistance R1.The first end of the second resistance R2 connects the drain electrode of the 2nd P type metal-oxide-semiconductor Q3.Second end of the second resistance R2 connects the drain electrode of the second N-type metal-oxide-semiconductor Q4.The grid of the second N-type metal-oxide-semiconductor Q4 receives the second voltage control signal CRTL2.Between the drain electrode that the grid of the 3rd N-type metal-oxide-semiconductor M1 and the grid of a P type metal-oxide-semiconductor Q2 are connected to the second N-type metal-oxide-semiconductor Q4 and second end of the second resistance R2.The source electrode of the 3rd N-type metal-oxide-semiconductor M1 is connected with the source electrode of the second N-type metal-oxide-semiconductor Q4.In a preferred embodiment, the power of the first N-type metal-oxide-semiconductor Q1, a P type metal-oxide-semiconductor Q2, the 2nd P type metal-oxide-semiconductor Q3 and the second N-type metal-oxide-semiconductor Q4 is all less than the power of the 3rd N-type metal-oxide-semiconductor M1, and utilizes the 3rd N-type metal-oxide-semiconductor M1 to control unlatching and the disconnection of battery discharging circuit.
In the present embodiment, the first voltage control signal CRTL1 and the second voltage control signal CRTL2 is respectively the pulse signal that comprises low and high level and with anti-phase each other.In the present embodiment, the high level of the first voltage control signal is greater than the first reference voltage VCC1, and the high level of the first voltage control signal CRTL1 is preferably less than or equal to the second reference voltage VCC2 simultaneously.
In the present embodiment, anti-phase each other between the first voltage control signal CRTL1 and the second voltage control signal CRTL2 is realized by inverter U1.Specifically, the input of inverter U1 receives source voltage control signal CTRL, and carries out anti-phase to source voltage control signal CTRL, to export the first voltage control signal CRTL1.The grid of the first N-type metal-oxide-semiconductor Q1 connects the output of inverter U1, and then receives the first voltage control signal CRTL1.In addition, the grid of the second N-type metal-oxide-semiconductor Q4 directly receives source voltage control signal CTRL, and using source voltage control signal CTRL as the second voltage control signal CRTL2.
It should be noted that those skilled in the art can realize between the first voltage control signal CRTL1 and the second voltage control signal CRTL2 completely by other means anti-phase each other.Such as, in other embodiments of the invention, also the output of inverter U1 can be connected to the grid of the second N-type metal-oxide-semiconductor Q4, the input of inverter U1 and the grid of the first N-type metal-oxide-semiconductor Q1 receive source voltage control signal CTRL simultaneously.Now, source voltage control signal CTRL is directly as the first voltage control signal CRTL1, and the anti-phase result of source voltage control signal CTRL is as the second voltage control signal CRTL2.
To the concrete control procedure of this switching circuit be described in detail below:
When needs regular picture, source voltage control signal CTRL is low level, second N-type metal-oxide-semiconductor Q4 ends disconnection, source voltage control signal CTRL exports as high level through inverter U1, and then control the first N-type metal-oxide-semiconductor Q1 conducting, the drain voltage of the first N-type metal-oxide-semiconductor Q1 is dragged down, and then makes the 2nd P type metal-oxide-semiconductor Q3 conducting.Now, disconnect because the second N-type metal-oxide-semiconductor Q4 ends, the grid voltage of a P type metal-oxide-semiconductor Q2 and the grid voltage of the 3rd N-type metal-oxide-semiconductor M1 are VCC2, and therefore a P type metal-oxide-semiconductor Q2 ends disconnection, the 3rd N-type metal-oxide-semiconductor M1 conducting, and then open battery discharging circuit.
In above process, metal-oxide-semiconductor Q1, Q2, Q3 and Q4 are small-power metal-oxide-semiconductor, the time of conducting and cut-off is very short, the response speed of switching circuit is improved, and and if only if the first N-type metal-oxide-semiconductor Q1 conducting moment, because a P type metal-oxide-semiconductor Q2 is in conducting state, between the second reference voltage VCC2 and the first reference voltage VCC1, form path, generation current.When after circuit stability, a P type metal-oxide-semiconductor Q2 ends disconnection, and this switching circuit can not produce kwh loss again.
When occurring to put, overcurrent or short circuit, source voltage control signal CTRL becomes high level, and source voltage control signal CTRL becomes low level through inverter U1, and the first N-type metal-oxide-semiconductor Q1 ends and disconnects.Second N-type metal-oxide-semiconductor Q4 conducting, the grid of the 3rd N-type metal-oxide-semiconductor M1 and source shorted, the 3rd N-type metal-oxide-semiconductor M1 ends disconnection, and battery discharging circuit is disconnected.Now, the grid voltage of a P type metal-oxide-semiconductor Q2 is low level, a P type metal-oxide-semiconductor Q2 conducting.Disconnect because the first N-type metal-oxide-semiconductor Q1 ends, and then make the grid voltage of the 2nd P type metal-oxide-semiconductor Q3 become the second reference voltage VCC2, the 2nd P type metal-oxide-semiconductor Q3 ends disconnection.
In above process, only in the second N-type metal-oxide-semiconductor Q4 conducting moment, and the 2nd P type metal-oxide-semiconductor Q3 is in conducting state, thus makes to form path, generation current between the source electrode of the second reference voltage VCC2 and the second N-type metal-oxide-semiconductor Q4.After circuit stability, the first N-type metal-oxide-semiconductor Q1 and the 2nd P type metal-oxide-semiconductor Q3 ends disconnection, and this switching circuit can not produce kwh loss again.
By the way, switching circuit of the present invention can carry out response fast and effectively reduce kwh loss.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (5)
1. a switching circuit, is characterized in that, comprising:
First N-type metal-oxide-semiconductor, the grid of described first N-type metal-oxide-semiconductor receives the first voltage control signal, and the source electrode of described first N-type metal-oxide-semiconductor connects the first reference voltage;
First resistance, the first end of described first resistance connects the drain electrode of described first N-type metal-oxide-semiconductor;
One P type metal-oxide-semiconductor, the drain electrode of a described P type metal-oxide-semiconductor connects the second end of described first resistance, and the source electrode of a described P type metal-oxide-semiconductor connects the second reference voltage, and described second reference voltage is higher than described first reference voltage;
2nd P type metal-oxide-semiconductor, between the drain electrode that the grid of described 2nd P type metal-oxide-semiconductor is connected to described first N-type metal-oxide-semiconductor and the first end of described first resistance, the source electrode of described 2nd P type metal-oxide-semiconductor connects described second reference voltage;
Second resistance, the first end of described second resistance connects the drain electrode of described 2nd P type metal-oxide-semiconductor;
Second N-type metal-oxide-semiconductor, the grid of described second N-type metal-oxide-semiconductor receives the second voltage control signal, described second voltage control signal and described first voltage control signal anti-phase each other, the drain electrode of described second N-type metal-oxide-semiconductor connects the second end of described second resistance;
3rd N-type metal-oxide-semiconductor, the grid of described 3rd N-type metal-oxide-semiconductor and the grid of a described P type metal-oxide-semiconductor are connected between the second end of described second resistance and the drain electrode of described second N-type metal-oxide-semiconductor, and the source electrode of described 3rd N-type metal-oxide-semiconductor connects the source electrode of described second N-type metal-oxide-semiconductor;
Wherein, the power of a described P type metal-oxide-semiconductor, described 2nd P type metal-oxide-semiconductor, described first N-type MOS and described second N-type metal-oxide-semiconductor is all less than the power of described 3rd N-type MOS type, and utilizes described 3rd N-type metal-oxide-semiconductor to control unlatching and the disconnection of battery discharging circuit.
2. switching circuit according to claim 1, is characterized in that: the high level of described first voltage control signal is less than or equal to described second reference voltage.
3. switching circuit according to claim 1, is characterized in that: the high level of described first voltage control signal is greater than described first reference voltage.
4. switching circuit according to claim 1, is characterized in that: described first reference voltage is ground voltage.
5. switching circuit according to claim 1, it is characterized in that, described switching circuit comprises inverter further, the input of described inverter receives source voltage control signal, the output of described inverter connects one in the grid of described first N-type metal-oxide-semiconductor and the grid of described second N-type metal-oxide-semiconductor, and another in the grid of described first N-type metal-oxide-semiconductor and the grid of described second N-type metal-oxide-semiconductor receives described source voltage control signal further.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110389205.XA CN103138315B (en) | 2011-11-29 | 2011-11-29 | Switch circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110389205.XA CN103138315B (en) | 2011-11-29 | 2011-11-29 | Switch circuit |
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| CN103138315A CN103138315A (en) | 2013-06-05 |
| CN103138315B true CN103138315B (en) | 2015-01-28 |
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| CN201110389205.XA Active CN103138315B (en) | 2011-11-29 | 2011-11-29 | Switch circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107508584A (en) * | 2017-08-28 | 2017-12-22 | 宁波瑞能智慧科技有限公司 | A kind of control circuit for DC fan heating |
| CN109239673A (en) * | 2018-09-29 | 2019-01-18 | 扬州海科电子科技有限公司 | A kind of width phase control multifunction chip of 6-18GHz |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529403A (en) * | 2003-10-20 | 2004-09-15 | 艾默生网络能源有限公司 | DC/DC converter synchronous rectification circuit |
| CN202424210U (en) * | 2011-11-29 | 2012-09-05 | 东莞钜威新能源有限公司 | Switch circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3159182B2 (en) * | 1998-08-24 | 2001-04-23 | 日本電気株式会社 | Output circuit of semiconductor device |
| JP2009253529A (en) * | 2008-04-03 | 2009-10-29 | Sharp Corp | Level shifter circuit with latch function, display element drive circuit, and liquid crystal display device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529403A (en) * | 2003-10-20 | 2004-09-15 | 艾默生网络能源有限公司 | DC/DC converter synchronous rectification circuit |
| CN202424210U (en) * | 2011-11-29 | 2012-09-05 | 东莞钜威新能源有限公司 | Switch circuit |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2000-68804A 2000.03.03 * |
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Effective date of registration: 20160225 Address after: 523808, Guangdong District, Songshan hi tech Industrial Development Zone, Dongguan, seven industrial North Road, 1 force science and technology center, 3 floor, B District Patentee after: DONGGUAN POWERWISE TECHNOLOGY CO.,LTD. Address before: 523808 productivity building, Songshan science and Technology Industrial Park, Guangdong, Dongguan Province, room 401-403 Patentee before: Dongguan PowerWise New Energy Co.,Ltd. |
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Denomination of invention: Switching circuit, filtering method and system thereof Effective date of registration: 20180129 Granted publication date: 20150128 Pledgee: The Bank of Dongguan Songshan Lake Science and technology branch of the Limited by Share Ltd. Pledgor: DONGGUAN POWERWISE TECHNOLOGY CO.,LTD. Registration number: 2018440000033 |
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