CN103023116B - Mobile communication terminal and circuit used for protecting charging of mobile communication terminal - Google Patents

Mobile communication terminal and circuit used for protecting charging of mobile communication terminal Download PDF

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Publication number
CN103023116B
CN103023116B CN201210594058.4A CN201210594058A CN103023116B CN 103023116 B CN103023116 B CN 103023116B CN 201210594058 A CN201210594058 A CN 201210594058A CN 103023116 B CN103023116 B CN 103023116B
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China
Prior art keywords
oxide
semiconductor
metal
communication terminal
connects
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Expired - Fee Related
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CN201210594058.4A
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Chinese (zh)
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CN103023116A (en
Inventor
张帆
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Huizhou TCL Mobile Communication Co Ltd
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Huizhou TCL Mobile Communication Co Ltd
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Abstract

The invention discloses a mobile communication terminal and a circuit used for protecting charging of the mobile communication terminal. The circuit comprises a comparator, a first MOS (metal oxide semiconductor) tube, a second MOS tube, a diode, a first resistor and a second resistor, wherein an anode of the diode is connected with a drain electrode of the first MOS tube, a cathode of the diode is connected with a source electrode of the first MOS tube, the source electrode of the first MOS tube is further connected with a charging unit of the mobile communication terminal and a negative input end of the comparator, the drain electrode of the first MOS tube is further connected with a charging interface of the mobile communication terminal and a positive input end of the comparator, a grid electrode of the first MOS tube is connected with a drain electrode of the second MOS tube, a grid electrode of the second MOS tube is connected with an output end of the comparator, a source electrode of the second MOS tube is grounded through the second resistor, one end of the first resistor is connected with the grid electrode of the first MOS tube, and the other end of the first resistor is connected with the source electrode of the first MOS tube to protect the mobile communication terminal. By the mode, counterflow of current or voltage can be prevented, so that the mobile communication terminal is protected from damages.

Description

A kind of communication terminal and the circuit for the protection of communication terminal charging
Technical field
The present invention relates to communication terminal technical field, particularly relate to a kind of communication terminal and the circuit for the protection of communication terminal charging.
Background technology
In the cell phone charging circuit design of prior art, charging circuit does not have reverse protection function for charger voltage input and does not have hardware mode to prevent the battery of mobile phone from electricity is fed back to charger.And in the actual use of user, may insert by mistake in charger, because mobile phone circuit does not have the function of reverse voltage, reverse-current protection, cause cellular phone power supplies managing chip easily damaged.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of communication terminal and the circuit for the protection of communication terminal charging, and to prevent the reverse flow of curtage, protection communication terminal is without prejudice.
For overcoming the above problems, the technical scheme that the present invention adopts is to provide a kind of circuit for the protection of communication terminal charging, comprise: comparator, first metal-oxide-semiconductor, second metal-oxide-semiconductor, diode, first resistance and the second resistance, wherein, the positive pole of diode connects the drain electrode of the first metal-oxide-semiconductor, the negative pole of diode connects the source electrode of the first metal-oxide-semiconductor, the source electrode of the first metal-oxide-semiconductor also connects the charhing unit of communication terminal and the negative input end of comparator, first metal-oxide-semiconductor drain electrode also connects charging inlet and the comparator positive input terminal of communication terminal, the grid of the first metal-oxide-semiconductor connects the drain electrode of the second metal-oxide-semiconductor, second metal-oxide-semiconductor grid connects the output of comparator, second metal-oxide-semiconductor source electrode is by the second grounding through resistance, one end of first resistance connects the grid of the first metal-oxide-semiconductor, the other end of the first resistance connects the source electrode of the first metal-oxide-semiconductor, to protect communication terminal, wherein, when voltage lower than charhing unit of the voltage of charging inlet, diode turns off, the output output low level of comparator, and the first metal-oxide-semiconductor and the second metal-oxide-semiconductor turn off, to protect communication terminal.
Wherein, when voltage higher than charhing unit of the voltage of charging inlet, diode current flow, communication terminal charges normal.
Wherein, the first metal-oxide-semiconductor is P type metal-oxide-semiconductor, and the second metal-oxide-semiconductor is N-type metal-oxide-semiconductor.
For overcoming the above problems, another technical solution used in the present invention is to provide a kind of communication terminal, comprise: protective circuit, charging inlet and charhing unit, charging inlet connects charhing unit by protective circuit, wherein, protective circuit comprises: comparator, first metal-oxide-semiconductor, second metal-oxide-semiconductor, diode, first resistance and the second resistance, the positive pole of diode connects the drain electrode of the first metal-oxide-semiconductor, the negative pole of diode connects the source electrode of the first metal-oxide-semiconductor, the source electrode of the first metal-oxide-semiconductor also connects the negative input end of charhing unit and comparator, first metal-oxide-semiconductor drain electrode also connects charging inlet and comparator positive input terminal, the grid of the first metal-oxide-semiconductor connects the drain electrode of the second metal-oxide-semiconductor, second metal-oxide-semiconductor grid connects the output of comparator, second metal-oxide-semiconductor source electrode is by the second grounding through resistance, one end of first resistance connects the grid of the first metal-oxide-semiconductor, the other end of the first resistance connects the source electrode of the first metal-oxide-semiconductor, to protect communication terminal, wherein, when voltage lower than charhing unit of the voltage of charging inlet, diode turns off, the output output low level of comparator, and the first metal-oxide-semiconductor and the second metal-oxide-semiconductor turn off, to protect communication terminal.
Wherein, when voltage higher than charhing unit of the voltage of charging inlet, diode current flow, communication terminal charges normal.
Wherein, the first metal-oxide-semiconductor is P type metal-oxide-semiconductor, and the second metal-oxide-semiconductor is N-type metal-oxide-semiconductor.
The invention has the beneficial effects as follows: the situation being different from prior art; the present invention by arranging a circuit between the charging inlet and charhing unit of communication terminal; for the protection of communication terminal charging, to prevent the reverse flow of curtage, protection communication terminal is without prejudice.
Accompanying drawing explanation
Fig. 1 is the circuit diagram for the protection of communication terminal charging of first embodiment of the invention;
Fig. 2 is the structural representation of a kind of communication terminal of second embodiment of the invention;
Embodiment
Refer to Fig. 1, Fig. 1 is the circuit diagram for the protection of communication terminal charging of the present invention.As shown in Figure 1, the circuit 10 for the protection of communication terminal charging suggested by the present embodiment comprises: comparator 103, first metal-oxide-semiconductor 101, second metal-oxide-semiconductor 102, diode 105, first resistance 106 and the second resistance 104.
In the present embodiment, the positive pole of diode 105 connects the drain electrode of the first metal-oxide-semiconductor 101, the negative pole of diode 105 connects the source electrode of the first metal-oxide-semiconductor 101, the source electrode of the first metal-oxide-semiconductor 101 also connects the charhing unit 12 of communication terminal and the negative input end of comparator 103, first metal-oxide-semiconductor 101 drains the charging inlet 11 and comparator 103 positive input terminal that also connect communication terminal, the grid of the first metal-oxide-semiconductor 101 connects the drain electrode of the second metal-oxide-semiconductor 102, second metal-oxide-semiconductor 102 grid connects the output of comparator 103, second metal-oxide-semiconductor 102 source electrode is by the second resistance 104 ground connection, one end of first resistance 106 connects the grid of the first metal-oxide-semiconductor 101, the other end of the first resistance 106 connects the source electrode of the first metal-oxide-semiconductor 101.
Below describe the operation principle of circuit 10 in detail:
When voltage higher than charhing unit 12 of the voltage of charging inlet 11, diode 105 conducting, communication terminal charges normal.
If charging inlet 11 reverse voltage input or charging inlet 11 is abnormal causes electric current to pour in down a chimney, namely the voltage of charging inlet 11 is lower than the voltage of charhing unit 12.Now, diode 105 turns off, the input that the positive input terminal of comparator 103 is connected to charging inlet 11, the negative input end of comparator 103 is connected to charhing unit 12, the output output low level of comparator 103.The grid of the second metal-oxide-semiconductor 102 is connected with comparator 103 output, and the grid level of the second metal-oxide-semiconductor 102 equals the source level of the second metal-oxide-semiconductor 102, and the second metal-oxide-semiconductor 102 is enhancement mode metal-oxide-semiconductor, and the second metal-oxide-semiconductor 102 turns off.In addition, the grid level of the first metal-oxide-semiconductor 101 is equal with source level, and the first metal-oxide-semiconductor 101 is enhancement mode metal-oxide-semiconductor, and the first metal-oxide-semiconductor 101 also turns off.Therefore, charging inlet 11 and the charhing unit 12 of communication terminal disconnect, and the reverse voltage that charging inlet 11 is poured into or reverse current cannot directly have influence on charhing unit 12, and then protect communication terminal charging.
It should be noted that in the present embodiment, the first metal-oxide-semiconductor 101 is P type metal-oxide-semiconductor, and the second metal-oxide-semiconductor 102 is N-type metal-oxide-semiconductor.In other embodiments, those of ordinary skill in the art can realize with other devices completely, such as triode.
In the present embodiment, the present embodiment by arranging circuit 10, the reverse voltage inputted to prevent charging inlet 11 or reverse current between the charging inlet 11 and charhing unit 12 of communication terminal, and then protection communication terminal is without prejudice.
Refer to Fig. 2, Fig. 2 is the structural representation of a kind of communication terminal of second embodiment of the invention.As shown in Figure 2, a kind of communication terminal 2 that the present embodiment discloses comprises: circuit 20, charging inlet 21, charhing unit 22, Base Band Unit 23, Power Management Unit 24 and battery 25.
In the present embodiment, the battery 25 of communication terminal 2 is charged by charhing unit 22, circuit 20 and charging inlet 21.Wherein, charging inlet 21 for connecting peripheral hardware charger, and is connected with charhing unit 22 by circuit 20, and charhing unit 22 is for controlling the charging current of battery 25.Base Band Unit 23 is connected between circuit 20 and charhing unit 22, to control the peripheral apparatus of communication terminal 2 and to detect charger.Power Management Unit 24 is connected to and between battery 25 and charhing unit 22, for the electric energy conversion of battery 25 is become communication terminal 2 other equipment needed for operating voltage.
In the present embodiment, circuit 20 comprises: comparator 203, first metal-oxide-semiconductor 201, second metal-oxide-semiconductor 202, diode 205, first resistance 206 and the second resistance 204.Wherein, the positive pole of diode 205 connects the drain electrode of the first metal-oxide-semiconductor 201, the negative pole of diode 205 connects the source electrode of the first metal-oxide-semiconductor 201, the source electrode of the first metal-oxide-semiconductor 201 also connects the charhing unit 22 of communication terminal and the negative input end of comparator 203, first metal-oxide-semiconductor 201 drains the charging inlet 21 and comparator 203 positive input terminal that also connect communication terminal, the grid of the first metal-oxide-semiconductor 201 connects the drain electrode of the second metal-oxide-semiconductor 202, second metal-oxide-semiconductor 202 grid connects the output of comparator 203, second metal-oxide-semiconductor 202 source electrode is by the second resistance 204 ground connection, one end of first resistance 206 connects the grid of the first metal-oxide-semiconductor 201, the other end of the first resistance 206 connects the source electrode of the first metal-oxide-semiconductor 201.
When voltage higher than charhing unit 22 of the voltage of charging inlet 21, diode 205 conducting, communication terminal charges normal.If charging inlet 21 reverse voltage input or charging inlet 21 is abnormal causes electric current to pour in down a chimney, namely the voltage of charging inlet 21 is lower than the voltage of charhing unit 22.Now, the input that the positive input terminal of comparator 203 is connected to charging inlet 21, the negative input end of comparator 203 is connected to charhing unit 22, the output output low level of comparator 203.The grid of the second metal-oxide-semiconductor 202 is connected with comparator 203 output, and the grid level of the second metal-oxide-semiconductor 202 equals the source level of the second metal-oxide-semiconductor 202, and the second metal-oxide-semiconductor 202 is enhancement mode metal-oxide-semiconductor, and the second metal-oxide-semiconductor 202 turns off.In addition, the grid level of the first metal-oxide-semiconductor 201 is equal with source level, and the first metal-oxide-semiconductor 201 is enhancement mode metal-oxide-semiconductor, and the first metal-oxide-semiconductor 201 also turns off.Therefore, charging inlet 21 and the charhing unit 22 of communication terminal 2 disconnect, and the reverse voltage that charging inlet 21 is poured into or reverse current cannot directly have influence on charhing unit 22, and then protect communication terminal 2 and charge.
In sum, the present invention by arranging a circuit between the charging inlet and charhing unit of communication terminal, and for the protection of communication terminal charging, to prevent the reverse flow of curtage, protection communication terminal is without prejudice.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.

Claims (6)

1. the circuit for the protection of communication terminal charging, it is characterized in that, described circuit comprises: comparator, first metal-oxide-semiconductor, second metal-oxide-semiconductor, diode, first resistance and the second resistance, wherein, the positive pole of described diode connects the drain electrode of described first metal-oxide-semiconductor, the negative pole of described diode connects the source electrode of described first metal-oxide-semiconductor, the source electrode of described first metal-oxide-semiconductor also connects the charhing unit of described communication terminal and the negative input end of described comparator, described first metal-oxide-semiconductor drain electrode also connects the charging inlet of described communication terminal and described comparator positive input terminal, the grid of described first metal-oxide-semiconductor connects the drain electrode of described second metal-oxide-semiconductor, described second metal-oxide-semiconductor grid connects the output of described comparator, described second metal-oxide-semiconductor source electrode is by described second grounding through resistance, one end of described first resistance connects the grid of described first metal-oxide-semiconductor, the other end of described first resistance connects the source electrode of described first metal-oxide-semiconductor, to protect described communication terminal, wherein, when voltage lower than described charhing unit of the voltage of described charging inlet, described diode turns off, the output output low level of described comparator, and described first metal-oxide-semiconductor and described second metal-oxide-semiconductor turn off, to protect described communication terminal.
2. circuit according to claim 1, is characterized in that, when voltage higher than described charhing unit of the voltage of described charging inlet, described diode current flow, described communication terminal charges normal.
3. circuit according to claim 1, is characterized in that, described first metal-oxide-semiconductor is P type metal-oxide-semiconductor, and described second metal-oxide-semiconductor is N-type metal-oxide-semiconductor.
4. a communication terminal, it is characterized in that, described communication terminal comprises: protective circuit, charging inlet and charhing unit, described charging inlet connects described charhing unit by described protective circuit, wherein, described protective circuit comprises: comparator, first metal-oxide-semiconductor, second metal-oxide-semiconductor, diode, first resistance and the second resistance, the positive pole of described diode connects the drain electrode of described first metal-oxide-semiconductor, the negative pole of described diode connects the source electrode of described first metal-oxide-semiconductor, the source electrode of described first metal-oxide-semiconductor also connects the negative input end of described charhing unit and described comparator, described first metal-oxide-semiconductor drain electrode also connects described charging inlet and described comparator positive input terminal, the grid of described first metal-oxide-semiconductor connects the drain electrode of described second metal-oxide-semiconductor, described second metal-oxide-semiconductor grid connects the output of described comparator, described second metal-oxide-semiconductor source electrode is by described second grounding through resistance, one end of described first resistance connects the grid of described first metal-oxide-semiconductor, the other end of described first resistance connects the source electrode of described first metal-oxide-semiconductor, to protect described communication terminal, wherein, when voltage lower than described charhing unit of the voltage of described charging inlet, described diode turns off, the output output low level of described comparator, and described first metal-oxide-semiconductor and described second metal-oxide-semiconductor turn off, to protect described communication terminal.
5. communication terminal according to claim 4, is characterized in that, when voltage higher than described charhing unit of the voltage of described charging inlet, described diode current flow, described communication terminal charges normal.
6. communication terminal according to claim 4, is characterized in that, described first metal-oxide-semiconductor is P type metal-oxide-semiconductor, and described second metal-oxide-semiconductor is N-type metal-oxide-semiconductor.
CN201210594058.4A 2012-12-31 2012-12-31 Mobile communication terminal and circuit used for protecting charging of mobile communication terminal Expired - Fee Related CN103023116B (en)

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* Cited by examiner, † Cited by third party
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CN104810820A (en) * 2015-05-15 2015-07-29 深圳市共进电子股份有限公司 USB (Universal Serial Bus) power supply circuit
CN110336341A (en) * 2019-05-24 2019-10-15 努比亚技术有限公司 Cradle and audio frequency broadcast system
CN210985660U (en) * 2019-10-24 2020-07-10 深圳市道通智能航空技术有限公司 Anti-reverse-filling circuit
CN111490570B (en) * 2020-03-24 2022-04-22 维沃移动通信有限公司 Protection circuit and electronic device

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EP2280414A1 (en) * 2009-07-28 2011-02-02 STMicroelectronics (Rousset) SAS Electronic device for reverse bias protection, and application in automotive field
CN201898330U (en) * 2010-11-12 2011-07-13 无锡新茂科技有限责任公司 Reverse-connection-preventive circuit
CN202050235U (en) * 2011-04-27 2011-11-23 海洋王照明科技股份有限公司 Battery reverse-connection protection circuit and lamp

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JP4597044B2 (en) * 2005-12-09 2010-12-15 株式会社リコー Backflow prevention circuit
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EP2280414A1 (en) * 2009-07-28 2011-02-02 STMicroelectronics (Rousset) SAS Electronic device for reverse bias protection, and application in automotive field
CN201898330U (en) * 2010-11-12 2011-07-13 无锡新茂科技有限责任公司 Reverse-connection-preventive circuit
CN202050235U (en) * 2011-04-27 2011-11-23 海洋王照明科技股份有限公司 Battery reverse-connection protection circuit and lamp

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