CN204464257U - The encapsulating structure of integrated sensor - Google Patents

The encapsulating structure of integrated sensor Download PDF

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Publication number
CN204464257U
CN204464257U CN201520231817.XU CN201520231817U CN204464257U CN 204464257 U CN204464257 U CN 204464257U CN 201520231817 U CN201520231817 U CN 201520231817U CN 204464257 U CN204464257 U CN 204464257U
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sensor
substrate
transducer
chip
cavity
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CN201520231817.XU
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Chinese (zh)
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端木鲁玉
张俊德
宋青林
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Goertek Microelectronics Inc
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Goertek Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H01L2924/16153—Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]

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  • Micromachines (AREA)

Abstract

The utility model proposes a kind of encapsulating structure of integrated sensor, comprising: first substrate and the multiple transducers arranged on the first substrate, the asic chip that each transducer includes MEMS sensor chip and connects with MEMS sensor chip electrical; Wherein, each transducer all encapsulates on the first substrate isolator with other transducer.The utility model also proposed a kind of encapsulating structure of integrated sensor, and described transducer comprises sensitive sensor and non-sensitive transducer, and each sensitive sensor all encapsulates on the first substrate isolator with other transducer.The utility model is discrete by cavity, each sensor unit of integrated sensor is carried out insulation package, or the sensitive sensor unit be easily interfered is carried out insulation package, interfering with each other with between each sensor unit masking integrated sensor, effectively improves the properties of product of integrated sensor.

Description

The encapsulating structure of integrated sensor
Technical field
The utility model relates to the encapsulating structure of integrated sensor.
Background technology
Integrated sensor is the sensor chip (such as by pressure sensor unit and the integrated integrated sensor of temperature sensor unit) that a kind of inside is integrated with multiple sensor unit, and uses as an independently chip that can realize multiple sensing function simultaneously.The encapsulation of current integrated sensor is generally be mounted on substrate by the MEMS sensor chip of its each sensor unit and asic chip, finally be encapsulated in carry out in a cavity integrated, such as shown in Fig. 1 and Fig. 2: shell 2 covers and surrounds a large cavity on first substrate 1, is provided with attachment two sensor units on first substrate 1 in cavity.One of them sensor unit comprises MEMS sensor chip 3 and asic chip 5, is electrically connected between the two by lead-in wire 4, and AISC chip 5 is connected to first substrate 1 by lead-in wire.Another sensor unit comprises MEMS sensor chip 8 and asic chip 7, and same by lead-in wire electrical connection between the two, AISC chip 7 is connected to first substrate 1 by lead-in wire.Shell 2 is provided with the opening 6 needed for sensor unit sensing, and the back side of first substrate 1 is provided with pad 9, and sensor unit is electrically connected with external circuit by pad 9.
This packaged type of existing integrated sensor be by all sensors unit package of integrated sensor in a cavity, in this case easily cause the interference mutually such as electricity, magnetic, heat, light between different sensors unit, have a strong impact on the overall performance of integrated sensor.
Utility model content
In order to solve the problems of the technologies described above, interfering with each other between each sensor unit of minimizing integrated sensor of trying one's best, the utility model proposes the new technical scheme about integrated sensor encapsulation.
According to first aspect of the present utility model, provide a kind of encapsulating structure of integrated sensor, comprise: first substrate and the multiple transducers be arranged on described first substrate, the asic chip that each described transducer includes MEMS sensor chip and connects with described MEMS sensor chip electrical; Wherein, each described transducer is all encapsulated on described first substrate isolator with other transducer.
Preferably, comprise the first encapsulation cavity that at least one is surrounded by shell and described first substrate, in described first encapsulation cavity, be isolated at least two second encapsulation cavitys by sidewall, in each described second encapsulation cavity, be provided with a described transducer.
Preferably, comprise the 3rd encapsulation cavity that at least one is surrounded by stand-alone shell and described first substrate, each described 3rd encapsulation inside cavity is provided with a described transducer.
Preferably, described transducer is directly arranged on described first substrate or by second substrate and is arranged on described first substrate.
Preferably, the MEMS sensor chip of transducer described at least one and asic chip integrate.
Preferably, the asic chip of non-interfering transducer integrate or MEMS sensor integrated chip together.
According to second aspect of the present utility model, additionally provide a kind of encapsulating structure of integrated sensor, comprise: first substrate and the multiple transducers be arranged on described first substrate, the asic chip that each described transducer includes MEMS sensor chip and connects with described MEMS sensor chip electrical; Wherein, described transducer comprises sensitive sensor and non-sensitive transducer, and each described sensitive sensor is all encapsulated on described first substrate isolator with other transducer.
Preferably, comprise the first encapsulation cavity that at least one is surrounded by shell and described first substrate, be isolated at least two second encapsulation cavitys by sidewall in described first encapsulation cavity, be wherein provided with a described sensitive sensor at least one second encapsulation cavity.
Preferably, comprise the 3rd encapsulation cavity that at least one is surrounded by stand-alone shell and described first substrate, wherein at least one the 3rd encapsulation inside cavity is provided with a described sensitive sensor.
Preferably, multiple described transducer comprises pressure sensor, microphone and humidity sensor, and described microphone and described humidity sensor are sensitive sensor, and described pressure sensor is non-sensitive transducer.
Preferably, described transducer is directly arranged on described first substrate or by second substrate and is arranged on described first substrate.
Preferably, the MEMS sensor chip of transducer described at least one and asic chip integrate.
Preferably, the asic chip of non-interfering transducer integrate or MEMS sensor integrated chip together.
The utility model is discrete by cavity, each sensor unit of integrated sensor is carried out insulation package, or the sensitive sensor unit be easily interfered is carried out insulation package, interfering with each other with between each sensor unit masking integrated sensor, effectively improves the properties of product of integrated sensor.
Accompanying drawing explanation
What form a part for specification drawings describes embodiment of the present utility model, and together with the description for explaining principle of the present utility model.
Fig. 1,2 is structural representations of existing integrated sensor encapsulating structure.
Fig. 3,4 is structural representations of the utility model integrated sensor encapsulating structure first embodiment.
Fig. 5,6 is structural representations of the utility model integrated sensor encapsulating structure second embodiment.
Fig. 7,8 is structural representations of the utility model integrated sensor encapsulating structure the 3rd embodiment.
Fig. 9,10 is structural representations of the utility model integrated sensor encapsulating structure the 4th embodiment.
Figure 11 is the structural representation of the utility model integrated sensor encapsulating structure the 5th embodiment.
Figure 12,13 is structural representations of the utility model integrated sensor encapsulating structure the 6th embodiment.
Figure 14,15 is structural representations of the utility model integrated sensor encapsulating structure the 7th embodiment.
Figure 16,17 is structural representations of the utility model integrated sensor encapsulating structure the 8th embodiment.
Figure 18,19 is structural representations of the utility model integrated sensor encapsulating structure the 9th embodiment.
Embodiment
Various exemplary embodiment of the present utility model is described in detail now with reference to accompanying drawing.It should be noted that: unless specifically stated otherwise, otherwise positioned opposite, the numerical expression of the parts of setting forth in these embodiments and step and numerical value do not limit scope of the present utility model.
Illustrative to the description only actually of at least one exemplary embodiment below, never as any restriction to the utility model and application or use.
The technology and equipment known for person of ordinary skill in the relevant may not discuss in detail, but in the appropriate case, described technology and equipment should be regarded as a part for specification.
In all examples with discussing shown here, any occurrence should be construed as merely exemplary, instead of as restriction.Therefore, other example of exemplary embodiment can have different values.
It should be noted that: represent similar terms in similar label and letter accompanying drawing below, therefore, once be defined in an a certain Xiang Yi accompanying drawing, then do not need to be further discussed it in accompanying drawing subsequently.
Integrated sensor comprises multiple sensor unit, wherein some sensor unit is relatively more responsive, namely the interference of other sensor unit in integrated sensor is more easily subject to, here be referred to as " sensitive sensor " by the sensor unit being easily subject to the interference of other sensor unit, the sensor unit outside sensitive sensor is referred to as " non-sensitive transducer ".The utility model makes each sensitive sensor all isolate with other transducer, and any one transducer also can be made further all to isolate with other transducer.Such as comprise in the integrated sensor of pressure sensor, microphone and humidity sensor at one, pressure sensor can discharge electromagnetic signal and heat energy becomes interference source, microphone be easy to the electromagnetic signal discharged by pressure sensor disturb, humidity sensor be easy to the heat energy discharged by pressure sensor disturb, so pressure sensor is non-sensitive transducer, microphone and humidity sensor are sensitive sensor, so microphone and other transducer can be kept apart by the utility model, humidity sensor is also kept apart with other transducer.On basis disclosed in the utility model, those skilled in the art can according to practical application product and environment determination sensitive sensor and non-sensitive transducer, and these also should belong in protection range of the present utility model.
With reference to figure 3 and the first embodiment that Figure 4 shows that integrated sensor encapsulating structure, integrated sensor comprises altogether two sensor units, one of them sensor unit comprises MEMS sensor chip 3 and asic chip 5, between the two by lead-in wire 4 electrical connection, asic chip 5 is electrically connected with first substrate 1 by a lead-in wire.Another sensor unit comprises MEMS sensor chip 8 and asic chip 7, and between the two equally by a lead-in wire electrical connection, asic chip 7 is electrically connected with first substrate 1 by a lead-in wire.Two sensor units are all mounted on first substrate 1, are electrically connected with external circuit by the pad 9 at first substrate 1 back side.Can find out, first embodiment surrounds one by shell 2 and first substrate 1 to encapsulate greatly cavity (the first encapsulation cavity), sidewall is set in large encapsulation inside cavity and is isolated into two small package cavitys (the second encapsulation cavity) by encapsulating greatly cavity, two sensor units are arranged in the second respective encapsulation cavity respectively, offer the opening 6 needed for sensor unit sensing at the top of the second encapsulation cavity.
With reference to figure 5 and the second embodiment that Figure 6 shows that integrated sensor encapsulating structure, be with the difference of the first embodiment shown in Fig. 3, second embodiment also comprises the 3rd sensor unit, 3rd sensor unit comprises MEMS sensor chip 11 and asic chip 10, same by lead-in wire electrical connection between the two, asic chip 10 is electrically connected with first substrate 1 by lead-in wire.Arrange sidewall and be isolated into three small package cavitys (the second encapsulation cavity) by encapsulating greatly cavity encapsulating greatly cavity (first encapsulation cavity) inside, three sensor units are arranged in the second respective encapsulation cavity respectively.
With reference to figure 7 and the 3rd embodiment that Figure 8 shows that integrated sensor encapsulating structure, comprise three sensor units, comprising a sensitive sensor and two non-sensitive transducers, sensitive sensor unit comprises MEMS sensor chip 3 and asic chip 5, a non-sensitive sensor unit comprises MEMS sensor chip 8 and asic chip 7, and another non-sensitive sensor unit comprises MEMS sensor chip 11 and asic chip 10.Arrange sidewall in large encapsulation inside cavity to encapsulate greatly cavity (the first encapsulation cavity) and be isolated into two small package cavitys (the second encapsulation cavity), independent for sensitive sensor is arranged in one second encapsulation cavity, two non-sensitive transducers are co-located in another the second encapsulation cavity, to realize the isolation of sensitive sensor and other transducer, sensitive sensor unit is avoided to be subject to the interference of other sensor unit.
With reference to figure 9 and the 4th embodiment that Figure 10 shows that integrated sensor encapsulating structure, be with the difference of the first embodiment shown in Fig. 3, it not the isolation that the form isolating small package cavity by arranging sidewall in large encapsulation inside cavity realizes between different sensors unit, but surrounded with first substrate 1 respectively by two shell 2-1 and 2-2 independent of each other independently the 3rd encapsulate cavity, two sensor units are arranged in the 3rd respective encapsulation cavity respectively, opening 6-1 and 6-2 needed for sensor unit sensing is offered respectively at the top of the 3rd encapsulation cavity.
With reference to the 5th embodiment that Figure 11 shows that integrated sensor encapsulating structure, be with the difference of the 4th embodiment shown in Fig. 9, the sensor unit on the right is not directly be arranged on first substrate 1 but be indirectly arranged on described first substrate 1 by second substrate 15, this sensor unit is mounted on second substrate 15, is electrically connected with external circuit by the pad 9 at first substrate 1 back side.In the assembling, the course of work of this sensor unit, external stress is passed to first substrate 1 and is then laid down by second substrate 15 buffering, protects this sensor unit, makes this sensor unit performance more stable.Special in pressure sensor unit, second substrate 15, as the structural design of buffer part, avoids external stress and has an impact to pressure sensor and cause pressure sensor data error, improve the sensitivity of pressure sensor unit.
Wherein, the shell in the first to the 3rd embodiment is made up of substrate, and the shell in the 4th and the 5th embodiment is metal shell.
In above-described embodiment, each chip needs attachment separately and electrical connection, and the many efficiency of operation is low, and bad hidden danger increases severely, and needs between each chip to reserve assembling safe space, waste overall product space.In order to better realize the discrete of cavity, sensor unit can also be carried out Integrated design by the utility model, and to reduce space waste, excellent province manufacturing procedure, promotes packaging efficiency and product yield.The utility model provides following three kinds of integration modes:
With reference to Figure 12 and the 6th embodiment that Figure 13 shows that integrated sensor encapsulating structure, equally with the second embodiment shown in Fig. 5 comprise three sensor units, difference is, the MEMS sensor chip of left side sensor unit 21 and asic chip integrate, and the MEMS sensor chip of intermediate sensor unit 22 and asic chip integrate.
With reference to Figure 14 and the 7th embodiment that Figure 15 shows that integrated sensor encapsulating structure, be with the difference of the 3rd embodiment shown in Fig. 7, two non-interfering sensor units share an asic chip, and MEMS sensor chip 8 and MEMS sensor chip 11 share an asic chip 10 specifically.
With reference to Figure 16 and the 8th embodiment that Figure 17 shows that integrated sensor encapsulating structure, be with the difference of the 3rd embodiment shown in Fig. 7, two non-interfering sensor units share a MEMS sensor chip, and asic chip 7 and asic chip 10 share a MEMS sensor chip 8 specifically.
With reference to Figure 18 and the 3rd embodiment that Figure 19 shows that integrated sensor encapsulating structure, be with the difference of the 3rd embodiment shown in Fig. 7, MEMS sensor chip and the asic chip of middle non-sensitive sensor unit 22 integrate, and another non-sensitive sensor unit on the right (comprising MEMS sensor chip 11 and asic chip 10) does not interfere with each other a shared cavity.
The packaged type of a large cavity is shared relative to existing integrated sensor, the utility model is discrete by cavity, each sensor unit of integrated sensor is carried out insulation package, or the sensitive sensor unit be easily interfered is carried out insulation package, interfering with each other with between each sensor unit masking integrated sensor, effectively improves the properties of product of integrated sensor.
Although be described in detail specific embodiments more of the present utility model by example, it should be appreciated by those skilled in the art, above example is only to be described, instead of in order to limit scope of the present utility model.It should be appreciated by those skilled in the art, when not departing from scope and spirit of the present utility model, above embodiment can be modified.Scope of the present utility model is limited by claims.

Claims (10)

1. an encapsulating structure for integrated sensor, is characterized in that, comprising:
First substrate and the multiple transducers be arranged on described first substrate, the asic chip that each described transducer includes MEMS sensor chip and connects with described MEMS sensor chip electrical;
Wherein, each described transducer is all encapsulated on described first substrate isolator with other transducer.
2. structure according to claim 1, it is characterized in that, comprise the first encapsulation cavity that at least one is surrounded by shell and described first substrate, be isolated at least two second encapsulation cavitys by sidewall in described first encapsulation cavity, in each described second encapsulation cavity, be provided with a described transducer.
3. structure according to claim 1, is characterized in that, comprises the 3rd encapsulation cavity that at least one is surrounded by stand-alone shell and described first substrate, and each described 3rd encapsulation inside cavity is provided with a described transducer.
4. an encapsulating structure for integrated sensor, is characterized in that, comprising:
First substrate and the multiple transducers be arranged on described first substrate, the asic chip that each described transducer includes MEMS sensor chip and connects with described MEMS sensor chip electrical;
Wherein, described transducer comprises sensitive sensor and non-sensitive transducer, and each described sensitive sensor is all encapsulated on described first substrate isolator with other transducer.
5. structure according to claim 4, it is characterized in that, comprise the first encapsulation cavity that at least one is surrounded by shell and described first substrate, be isolated at least two second encapsulation cavitys by sidewall in described first encapsulation cavity, be wherein provided with a described sensitive sensor at least one second encapsulation cavity.
6. structure according to claim 4, is characterized in that, comprises the 3rd encapsulation cavity that at least one is surrounded by stand-alone shell and described first substrate, and wherein at least one the 3rd encapsulation inside cavity is provided with a described sensitive sensor.
7. the structure according to any one of claim 4-6, it is characterized in that, multiple described transducer comprises pressure sensor, microphone and humidity sensor, and described microphone and described humidity sensor are sensitive sensor, and described pressure sensor is non-sensitive transducer.
8. the structure according to claim 1 or 4, is characterized in that, described transducer is directly arranged on described first substrate or by second substrate and is arranged on described first substrate.
9. the structure according to claim 1 or 4, is characterized in that, the MEMS sensor chip of transducer described at least one and asic chip integrate.
10. the structure according to claim 1 or 4, is characterized in that, the asic chip of non-interfering transducer integrate or MEMS sensor integrated chip together.
CN201520231817.XU 2015-04-16 2015-04-16 The encapsulating structure of integrated sensor Active CN204464257U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111665323A (en) * 2019-03-06 2020-09-15 复凌科技（上海）有限公司 Chip module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111665323A (en) * 2019-03-06 2020-09-15 复凌科技（上海）有限公司 Chip module

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CP01 Change in the name or title of a patent holder

Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268

Patentee after: Goertek Inc.

Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268

Patentee before: Goertek Inc.

TR01 Transfer of patent right

Effective date of registration: 20200616

Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province

Patentee after: Goer Microelectronics Co.,Ltd.

Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268

Patentee before: GOERTEK Inc.

TR01 Transfer of patent right