CN204464255U - 集成传感器的封装结构 - Google Patents
集成传感器的封装结构 Download PDFInfo
- Publication number
- CN204464255U CN204464255U CN201520232312.5U CN201520232312U CN204464255U CN 204464255 U CN204464255 U CN 204464255U CN 201520232312 U CN201520232312 U CN 201520232312U CN 204464255 U CN204464255 U CN 204464255U
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- CN
- China
- Prior art keywords
- sensor
- substrate
- transducer
- encapsulation
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000005538 encapsulation Methods 0.000 claims abstract description 44
- 238000002347 injection Methods 0.000 claims abstract description 27
- 239000007924 injection Substances 0.000 claims abstract description 27
- 230000001133 acceleration Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 8
- 230000035882 stress Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- ROXBGBWUWZTYLZ-UHFFFAOYSA-N [6-[[10-formyl-5,14-dihydroxy-13-methyl-17-(5-oxo-2h-furan-3-yl)-2,3,4,6,7,8,9,11,12,15,16,17-dodecahydro-1h-cyclopenta[a]phenanthren-3-yl]oxy]-4-methoxy-2-methyloxan-3-yl] 4-[2-(4-azido-3-iodophenyl)ethylamino]-4-oxobutanoate Chemical compound O1C(C)C(OC(=O)CCC(=O)NCCC=2C=C(I)C(N=[N+]=[N-])=CC=2)C(OC)CC1OC(CC1(O)CCC2C3(O)CC4)CCC1(C=O)C2CCC3(C)C4C1=CC(=O)OC1 ROXBGBWUWZTYLZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000006355 external stress Effects 0.000 description 4
- 230000002452 interceptive effect Effects 0.000 description 3
- 208000002925 dental caries Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/16153—Cap enclosing a plurality of side-by-side cavities [e.g. E-shaped cap]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520232312.5U CN204464255U (zh) | 2015-04-16 | 2015-04-16 | 集成传感器的封装结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520232312.5U CN204464255U (zh) | 2015-04-16 | 2015-04-16 | 集成传感器的封装结构 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204464255U true CN204464255U (zh) | 2015-07-08 |
Family
ID=53671103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201520232312.5U Active CN204464255U (zh) | 2015-04-16 | 2015-04-16 | 集成传感器的封装结构 |
Country Status (1)
Country | Link |
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CN (1) | CN204464255U (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104900599A (zh) * | 2015-04-16 | 2015-09-09 | 歌尔声学股份有限公司 | 集成传感器的封装结构和封装方法 |
CN105957838A (zh) * | 2016-04-28 | 2016-09-21 | 清华大学 | 用于三维系统级封装的封装结构及封装方法 |
CN105957837A (zh) * | 2016-04-28 | 2016-09-21 | 清华大学 | 用于三维系统级封装的封装结构及封装方法 |
CN105977221A (zh) * | 2016-04-28 | 2016-09-28 | 清华大学 | 气密性封装结构及封装方法 |
CN110248298A (zh) * | 2019-05-13 | 2019-09-17 | 苏州捷研芯纳米科技有限公司 | 硅麦克风及其加工方法 |
-
2015
- 2015-04-16 CN CN201520232312.5U patent/CN204464255U/zh active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104900599A (zh) * | 2015-04-16 | 2015-09-09 | 歌尔声学股份有限公司 | 集成传感器的封装结构和封装方法 |
CN105957838A (zh) * | 2016-04-28 | 2016-09-21 | 清华大学 | 用于三维系统级封装的封装结构及封装方法 |
CN105957837A (zh) * | 2016-04-28 | 2016-09-21 | 清华大学 | 用于三维系统级封装的封装结构及封装方法 |
CN105977221A (zh) * | 2016-04-28 | 2016-09-28 | 清华大学 | 气密性封装结构及封装方法 |
CN105957838B (zh) * | 2016-04-28 | 2018-11-06 | 清华大学 | 用于三维系统级封装的封装结构及封装方法 |
CN105957837B (zh) * | 2016-04-28 | 2018-11-06 | 清华大学 | 用于三维系统级封装的封装结构及封装方法 |
CN105977221B (zh) * | 2016-04-28 | 2018-11-06 | 清华大学 | 气密性封装结构及封装方法 |
CN110248298A (zh) * | 2019-05-13 | 2019-09-17 | 苏州捷研芯纳米科技有限公司 | 硅麦克风及其加工方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200612 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |