CN204441320U - A kind of wafer substrate - Google Patents
A kind of wafer substrate Download PDFInfo
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- CN204441320U CN204441320U CN201520124010.6U CN201520124010U CN204441320U CN 204441320 U CN204441320 U CN 204441320U CN 201520124010 U CN201520124010 U CN 201520124010U CN 204441320 U CN204441320 U CN 204441320U
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- Prior art keywords
- substrate
- type chamfering
- epitaxial growth
- wafer
- chamfering
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- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 14
- 229910002804 graphite Inorganic materials 0.000 abstract description 14
- 239000010439 graphite Substances 0.000 abstract description 14
- 238000012795 verification Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000004026 adhesive bonding Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
A kind of wafer substrate, be positioned in the groove of graphite carrier during epitaxial growth, and rotate with the rotation of graphite carrier, for improving edges of substrate epitaxial growth yield and preventing epitaxial growth film flying phenomenon, it is characterized in that: the edge of described substrate is provided with L-type chamfering, described L-type chamfering comprises the vertical component and horizontal component that are interconnected to and are integrated.The substrate of L-type chamfering that what the utility model provided have, through experimental verification, can effectively improve patterned substrate edge uneven due to figure and the problem of the yield of generation reduction, simultaneously, when also effectively can improve epitaxial growth, the film flying phenomenon that the groove of warpage substrate and graphite carrier can not be fitted and be produced.
Description
Technical field
The utility model relates to wafer substrate in manufacture of semiconductor, particularly relates to the wafer substrate with L-type chamfering.
Background technology
At present, the backing material that making semiconductor element uses has sapphire (Al
2o
3), carborundum (SiC) and silicon (Si).The substrate shape of epitaxial growth is various, is generally circular or square, positive and negative in order to clear and definite crystal orientation and substrate, usually arranges gulde edge (orientation) or instruction limit (index flat) at edges of substrate.In addition, chamfering (edge angle) processing is often carried out at the edge of substrate, the shape of substrate chamfering generally includes T-shaped and R type, the defect being usually used in preventing substrate in the course of processing or crack and when crystalline growth periphery growth too fast, and conveniently use tweezers gripping.
In LED processing procedure, in order to improve light extraction efficiency, usually wafer substrate being carried out graphical treatment, forming patterned substrate (Patterned substrate).Usual making step comprises: in wafer substrate, utilize gluing machine by high speed spin coating coating mask layer (as photoresist), utilizes dry method or wet etching to form the patterned substrate with uniform pattern.When traditional substrate applies mask layer, the mask layer thickness of edges of substrate is higher than substrate center position, and then causes obtaining the uniform patterned substrate of figure, affects the yield of wafer edge portion in follow-up LED processing procedure.
LED extension (epitaxy) wafer is usually by metallo-organic compound chemical gaseous phase deposition (Metal-organic Chemical Vapor Deposition, MOCVD) obtain, its processing procedure is generally: groove epitaxial wafer substrate (as Sapphire Substrate) being put into graphite carrier (wafer carrier), be passed in MOCVD reative cell together with graphite carrier, substrate is heated to high temperature about 1000 DEG C together with graphite carrier, organo-metallic compound and V race's gas is passed in reative cell, regroup in wafer substrate after Pintsch process and form LED epitaxial loayer.
For GaN base LED, because sapphire wafer substrate and GaN epitaxial layer exist larger lattice mismatch and thermal mismatching, in epitaxial process, substrate can produce warping phenomenon, especially the warping phenomenon of more than 4 cun substrates is even more serious, and traditional have T-shaped and warpage substrate that is R type chamfering and all can not fit with the groove inward flange sidewall of graphite carrier, causes warpage substrate to be thrown out of graphite carrier groove due to the effect of centrifugal force, produce film flying phenomenon, cause substrate damaged.
In view of above the deficiencies in the prior art, be necessary to provide a kind of substrate with chamfering, the film flying phenomenon produced when reducing epitaxial growth, and uniformity prepared by raising patterned substrate.
Summary of the invention
The utility model aims to provide a kind of wafer substrate, to solve above-mentioned deficiency.Concrete technical scheme is as follows: a kind of wafer substrate, for improving edges of substrate epitaxial growth yield and preventing epitaxial growth film flying phenomenon, wherein, the edge of described substrate is provided with L-type chamfering, and described L-type chamfering comprises the vertical component and horizontal component that are interconnected to and are integrated.
Preferably, the thickness of described substrate is set to T, and described vertical component height is set as H, and the magnitude relationship of T and H meets relational expression: H=0.01T ~ 0.4T.
Preferably, described vertical component height is set as H, and the scope of H is 5 ~ 50 μm.
Preferably, the width of described horizontal component is set to D, and the diameter of described substrate top surface is set to D1, and the diameter of lower surface is set to D2, and wherein D, D1 and D2 relation meets relational expression: 2 × D=D2-D1,1 μ m≤D≤30 μm.
Preferably, described L-type chamfering and described substrate top surface junction are set to arc.
Preferably, described L-type chamfering and described substrate lower surface junction are set to arc.
Preferably, described substrate is any one in sapphire plain film substrate, patterned sapphire substrate (Patterned Sapphire Substrate, PSS), carborundum (SiC) substrate, silicon (Si) substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate.
Preferably, described substrate is circular, square or irregular shape.
The substrate of L-type chamfering that what the utility model provided have, through experimental verification, when effectively can improve epitaxial growth, the groove of warpage substrate and graphite carrier can not be fitted and produce the phenomenon of film flying; Meanwhile, also can effectively improve patterned substrate edge uneven due to figure and the problem of the yield of generation reduction.
Accompanying drawing explanation
Fig. 1 is the side-looking structural representation of the utility model.
Fig. 2 is the plan structure schematic diagram of the utility model.
Fig. 3 is the structure side view of traditional T-shaped chamfering substrate after gluing
Fig. 4 is the structure side view of traditional T-shaped chamfering substrate when epitaxial growth.
Fig. 5 is the structure side view of L-type chamfering substrate after gluing of the utility model.
Fig. 6 is the structure side view of L-type chamfering substrate when epitaxial growth of the utility model.
Mark in figure: 1:L type chamfering substrate; 11:L type chamfering; 111: vertical component; 112: horizontal component; 2:T type chamfering substrate; 3: uneven photoresist; 4: evenly photoresist; 5: groove; 6: graphite carrier.
Embodiment
With preferred embodiment, the utility model is described in further detail by reference to the accompanying drawings now.These accompanying drawings are the schematic diagram of simplification, only basic structure of the present utility model are described in a schematic way, and therefore it only shows the formation relevant with the utility model.
Referring to Fig. 1 and Fig. 2, the one that the utility model provides has L-type chamfering substrate 1, be positioned over during epitaxial growth in the groove 5 of graphite carrier 6, and rotate with the rotation of graphite carrier 6, for improving L-type chamfering substrate 1 edge epi growth yield and preventing epitaxial growth film flying phenomenon.The edge of L-type chamfering substrate 1 is provided with L-type chamfering 11, and L-type chamfering 11 comprises the vertical component 111 and horizontal component 112 that are interconnected to and are integrated.The thickness of L-type chamfering substrate 1 is set as T, and vertical component 111 is highly set as H, and the magnitude relationship of T and H meets: H=0.01 ~ 0.4T, and the scope of the preferred H of the utility model is 5 ~ 50 μm; The width of the horizontal component 112 of L-type chamfering 11 is set to D, and the diameter of L-type chamfering substrate 1 upper surface is set to D1, and the diameter of lower surface is set to D2, and D, D1 and D2 relation meets: 2 × D=D2-D1,1 μ m≤D≤30 μm.
In order to reduce L-type chamfering substrate 1 breakage rate and sliver rate when processing and fabricating, L-type chamfering 11 and L-type chamfering substrate 1 upper surface junction are set to arc, and L-type chamfering 11 and L-type chamfering substrate 1 lower surface junction also can be set to arc (not showing in arc figure).L-type chamfering substrate 1 is any one in sapphire plain film substrate, patterned sapphire substrate (PSS), carborundum (SiC) substrate, silicon (Si) substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate, and shape is circular, square or irregular shape.
Referring to Fig. 3 and Fig. 4, for traditional T-shaped chamfering, when traditional T-shaped chamfering substrate 2 utilizes gluing machine (not shown) to be spin-coated on T-shaped chamfering substrate 2 by photoresist by High Rotation Speed, the uneven photoresist 3 that easy formation intermediate thin, edge are thick, this uneven photoresist 3 and then the yield at edge when affecting patterned uniformity and the subsequently epitaxial growing of T-shaped chamfering substrate 2.In addition, when epitaxial growth, for at T-shaped chamfering Sapphire Substrate 2 Epitaxial growth GaN base epitaxial loayer, because sapphire and gallium nitride exist larger lattice mismatch and thermal mismatching, upturned situation can be there is in the high growth temperature stage of T-shaped chamfering Sapphire Substrate 2 in epitaxial manufacture process, particularly for the substrate of more than 4 cun large-sizes, warping phenomenon is more obvious, and now the rotating speed of graphite carrier 6 is higher, and T-shaped chamfering Sapphire Substrate 2 is little with the contact area of groove 5 inward flange sidewall, therefore the T-shaped chamfering Sapphire Substrate 2 producing warpage under higher rotation speed due to the impact of centrifugal action, then easily be thrown out of graphite carrier 6 and produce film flying phenomenon.Referring to Fig. 5 and Fig. 6, and the utility model is comparatively large with the contact area of groove 5 inward flange sidewall due to L-type chamfering Sapphire Substrate 1, thus effectively reduces film flying probability.In addition, through experimental verification, when L-type chamfering substrate 1 applies photoresist, even photoresist 4 can be formed, and then the yield at edge when effectively improving patterned uniformity and the subsequently epitaxial growing of L-type chamfering substrate 1.
Should be understood that, above-mentioned specific embodiments is preferred embodiment of the present utility model, and scope of the present utility model is not limited to this embodiment, and all any changes done according to the utility model, all belong within protection range of the present utility model.
Claims (8)
1. a wafer substrate, is characterized in that: the edge of described substrate is provided with L-type chamfering, and described L-type chamfering comprises the vertical component and horizontal component that are interconnected to and are integrated, for improving edges of substrate epitaxial growth yield and avoiding epitaxial growth film flying phenomenon.
2. a kind of wafer substrate according to claim 1, is characterized in that: the thickness of described substrate is set to T, described vertical component height is set as H, and the size of T and H meets relational expression: H=0.01T ~ 0.4T.
3. a kind of wafer substrate according to claim 1, is characterized in that: described vertical component height is set as H, and the span of H is: 5 μ m≤H≤50 μm.
4. a kind of wafer substrate according to claim 1, it is characterized in that: the width of described horizontal component is set to D, the diameter of described substrate top surface is set to D1, and the diameter of lower surface is set to D2, D, D1 and D2 size meets relational expression: 2 × D=D2-D1,1 μ m≤D≤30 μm.
5. a kind of wafer substrate according to claim 1, is characterized in that: described L-type chamfering and described substrate top surface junction are set to arc.
6. a kind of wafer substrate according to claim 1, is characterized in that: described L-type chamfering and described substrate lower surface junction are set to arc.
7. a kind of wafer substrate according to claim 1, is characterized in that: described substrate is any one in sapphire plain film substrate, patterned sapphire substrate, silicon carbide substrates, silicon substrate, gallium nitride substrate, zinc oxide substrate.
8. a kind of wafer substrate according to claim 1, is characterized in that: described substrate is circular, square or irregular shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520124010.6U CN204441320U (en) | 2015-03-04 | 2015-03-04 | A kind of wafer substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520124010.6U CN204441320U (en) | 2015-03-04 | 2015-03-04 | A kind of wafer substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204441320U true CN204441320U (en) | 2015-07-01 |
Family
ID=53609151
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| CN201520124010.6U Active CN204441320U (en) | 2015-03-04 | 2015-03-04 | A kind of wafer substrate |
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| CN (1) | CN204441320U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111009598A (en) * | 2019-10-30 | 2020-04-14 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer and light emitting diode epitaxial wafer |
| CN111455353A (en) * | 2020-04-07 | 2020-07-28 | 中国科学院长春光学精密机械与物理研究所 | Tray for semiconductor material epitaxial growth equipment |
-
2015
- 2015-03-04 CN CN201520124010.6U patent/CN204441320U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111009598A (en) * | 2019-10-30 | 2020-04-14 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer and light emitting diode epitaxial wafer |
| CN111009598B (en) * | 2019-10-30 | 2020-11-10 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer and light emitting diode epitaxial wafer |
| CN111455353A (en) * | 2020-04-07 | 2020-07-28 | 中国科学院长春光学精密机械与物理研究所 | Tray for semiconductor material epitaxial growth equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |