CN105047537A - Preparation method for discontinuous epitaxial layer - Google Patents
Preparation method for discontinuous epitaxial layer Download PDFInfo
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- CN105047537A CN105047537A CN201510438682.9A CN201510438682A CN105047537A CN 105047537 A CN105047537 A CN 105047537A CN 201510438682 A CN201510438682 A CN 201510438682A CN 105047537 A CN105047537 A CN 105047537A
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- epitaxial loayer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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Abstract
A preparation method for a discontinuous epitaxial layer comprises the following steps of: providing a substrate; depositing a photoresist layer on the substrate, wherein the thickness of the photoresist layer is greater than the thickness of a sequentially-formed epitaxial layer; exposing and developing the photoresist layer, and forming a pattern at a required size on the photoresist layer; transferring the pattern on the photoresist layer onto the substrate through etching, and forming a region for dividing the epitaxial layer on the substrate, wherein the region can be a groove sunken from the surface of the substrate or a barrier protruding out of the surface of the substrate; and removing residual photoresist, growing the epitaxial layer on the substrate, and thereby forming the discontinuous epitaxial layer divided by the groove on the substrate. In the discontinuous epitaxial layer, the division region is fabricated on the substrate and leads the epitaxial layer not to grow; and since the division region exists on the substrate and leads the epitaxial layer not to grow, the sequentially-formed epitaxial layer is discontinuous, and thus, the warping degree of an epitaxial wafer is reduced.
Description
Technical field
The invention belongs to technical field of semiconductor luminescence, particularly relate to a kind of preparation method of epitaxial layer of gallium nitride.
Background technology
The appearance of light emitting semiconductor device brings the light source of energy covering visible light spectrum and higher luminous efficiency and solid state stability.Have the advantages such as energy-conserving and environment-protective high life due to light-emitting diode, in the support of national governments with under promoting, overall application is in each production field, the revolution again after being the bright electric light of illuminating industry secondary.
Build brilliant in the semiconductor components and devices primary growth of representative is on the substrates such as sapphire, silicon, carborundum, GaAs with gallium nitride, not mate due to substrate and epitaxial loayer lattice constant and thermal coefficient of expansion there are differences, epitaxial wafer (wafer) angularity can be caused to increase when epitaxy layer thickness increases, affect quality and the yield of epitaxial wafer, when warpage is serious, even can cause epitaxial wafer fragmentation.Epitaxial wafer many employings metallo-organic compound chemical gaseous phase deposition (MOCVD) grows, in order to cost-saving, the size of epitaxial wafer starts to make to large direction, from 2 cun to 4 cun again to 6 cun, along with the increase of size, the warpage of epitaxial wafer in growth course is also increasing, and the probability of fragmentation also will increase, and the problem therefore solving epitaxial wafer warpage is very urgent.
Summary of the invention
The object of the present invention is to provide a kind of preparation method that can reduce the epitaxial loayer of epitaxial wafer angularity, to promote quality and the yield of epitaxial wafer, reduce fragment rate.
To achieve these goals, the present invention takes following technical solution:
A preparation method for discontinuous epitaxial loayer, comprises the following steps:
Step one, provide substrate;
Step 2, at deposited on substrates photoresist layer, the thickness of described photoresist layer is greater than the thickness of the epitaxial loayer of follow-up formation;
Step 3, exposure imaging is carried out to photoresist layer, photoresist layer is formed the figure of required size;
Step 4, by etching by the Graphic transitions on photoresist layer on substrate, substrate is formed from the recessed groove of substrate surface;
The photoresist of step 5, removal remnants;
Step 6, at Grown epitaxial loayer, to be formed on substrate by the discontinuous epitaxial loayer of recess divides.
To achieve these goals, the present invention also can take following technical solution:
A preparation method for discontinuous epitaxial loayer, comprises the following steps:
Step one, provide substrate;
Step 2, in deposited on substrates barrier layer, the thickness of described barrier layer is greater than the thickness of the epitaxial loayer of subsequent growth;
Step 3, in barrier layer, deposit photoresist layer; The thickness of described photoresist layer is greater than the thickness of the epitaxial loayer of follow-up formation;
Step 4, exposure imaging is carried out to photoresist layer, photoresist layer is formed the figure of required size;
Step 5, by etching by the Graphic transitions on photoresist layer in barrier layer, substrate forms the barrier protruding from substrate surface protruding;
The photoresist of step 6, removal remnants;
Step 7, at Grown epitaxial loayer, to be formed on substrate by the protruding separated discontinuous epitaxial loayer of barrier.
Further, the degree of depth of the groove on described substrate is greater than the thickness of epitaxial loayer.
Further, the degree of depth of the groove on described substrate is 5 microns ~ 15 microns.
Further, described epitaxial loayer is gallium nitride.
Further, described barrier layer is SiO
2layer.
Further, the thickness of described barrier layer is equal with the thickness of described photoresist layer.
Further, the thickness of described barrier layer is 5 microns ~ 15 microns, and width is 5 microns ~ 30 microns.
Further, the position of described groove or barrier and the cutter of post-production chip match.
From above technical scheme, the separated region that the present invention cannot grow up by making epitaxial loayer on substrate, owing to substrate existing the separated region that epitaxial loayer cannot grow, make the epitaxial loayer of subsequent growth discontinuous, can effectively eliminate stress, thus reduce the angularity of epitaxial wafer, promote quality and the yield of epitaxial wafer, reduce fragment rate.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention, simple introduction is done below by the accompanying drawing used required in embodiment or description of the prior art, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the substrat structure schematic diagram of the embodiment of the present invention 1;
Fig. 2 is the schematic diagram that embodiment 1 forms photoresist layer on substrate;
Fig. 3 is the schematic diagram after photoresist layer exposure imaging;
Fig. 4 is the schematic diagram after substrate etching;
Fig. 5 is the schematic diagram forming epitaxial loayer on substrate;
Fig. 6 is the substrat structure schematic diagram of the embodiment of the present invention 2;
Fig. 7 is the schematic diagram that embodiment 2 forms barrier layer on substrate;
Fig. 8 is the schematic diagram forming photoresist layer in barrier layer;
Fig. 9 is the schematic diagram after photoresist layer exposure imaging;
Figure 10 is the schematic diagram after substrate etching;
Figure 11 is the schematic diagram forming epitaxial loayer on substrate.
Embodiment
In order to allow above and other objects of the present invention, feature and advantage can be more obvious, the embodiment of the present invention cited below particularly, and coordinate appended diagram, be described below in detail.
The basic ideas of the inventive method are: by making the separated region that epitaxial loayer cannot be grown up on substrate, owing to substrate existing the separated region that epitaxial loayer cannot grow, make the epitaxial loayer of subsequent growth discontinuous, thus reduce the angularity of epitaxial wafer.
It is more than core concept of the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme of the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Describe the present invention below in conjunction with accompanying drawing; when describing the embodiment of the present invention in detail, for ease of illustrating, represent that the accompanying drawing of device architecture can be disobeyed general ratio and be done partial enlargement; and described schematic diagram is example, it should not limit the scope of protection of the invention at this.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the clearly aid illustration embodiment of the present invention.
Embodiment 1
Referring to figs. 1 through Fig. 5, the step of the discontinuous epitaxial loayer preparation method of the present embodiment is as follows:
Step one, as shown in Figure 1, provide substrate 1, the substrate of the present embodiment is Sapphire Substrate;
Step 2, as shown in Figure 2, deposit one deck photoresist layer 2 on substrate 1, the present embodiment adopts glue spreader to form photoresist layer on substrate, liquid photoresist drops in the center of substrate, during chuck High Rotation Speed, photoresist spreads apart under the influence of centrifugal force, and covering substrate surface equably, the thickness of the present embodiment photoresist layer is 10 microns, is greater than the thickness of the epitaxial loayer of subsequent growth; The photoresist used can be positive glue also can be negative glue, and positive glue is removed exposure area when developing, and negative glue is removed non-exposed areas when developing, the present embodiment with positive glue for example is described;
Step 3, as shown in Figure 3, exposure imaging is carried out to photoresist layer 2, photoresist layer 2 is formed the figure of required size;
Exposure carries out selection chemical reaction to part photoresist, changes the dissolubility of photoresist in developer solution of exposed portion, after development, obtain the figure corresponding with mask on photoresist layer; The size that the size of figure can refer to the chip of post-production designs, and the position of the position of photoresist layer upper groove and later stage radium-shine Cutting Road is matched; Development is that the pattern on mask plate is copied on photoresist layer, and complete after aiming at and exposing, the figure of mask is just recorded on photoresist layer to expose with unexposed form, and the decomposition of developing technique chemical reaction is not polymerized photoresist makes pattern development;
Step 4, as shown in Figure 4, by etching by the Graphic transitions on photoresist layer 2 on substrate 1, formed from the recessed groove of substrate surface on substrate 1;
The present embodiment adopts dry etching by the Graphic transitions on photoresist layer on substrate, dry etching adopts inductive couple plasma (ICP) etching apparatus to etch, high energy beam is utilized to carry out removing the processing of material to substrate, reach the discontinuous object of outer layer growth, the degree of depth of the grooves d 1 that substrate is formed must be greater than the thickness d 2 (Fig. 5) of the epitaxial loayer of subsequent growth, namely the degree of depth (thickness of photoresist layer) etched must not lower than the thickness of epitaxial loayer, and the degree of depth of the groove on substrate can be 5 microns ~ 15 microns; The thickness of the epitaxial loayer of the present embodiment is 7 microns, so the height of subsequent etching must be greater than 7 microns;
Photoresist layer in this step refers to the photoresist sticked to after step 3 exposure imaging on substrate, figure sticks to the shape of photoresist on substrate after referring to development, in dry etching, substrate covered by photoresist is retained, substrate covered by photoresist is not had to be etched away, form groove, by the Graphic transitions on photoresist in Sapphire Substrate;
Photoresist remaining on step 5, removal substrate;
The present embodiment adopts wet etching to remove remaining photoresist, and being formed after cleaning can the substrate of direct growth; Wet etching utilizes liquid chemical challenges or solution to be carried out the method etched by chemical reaction, the photoresist be not etched a little that gets off remaining after photoresist remaining in this step refers to dry etching;
Step 6, as shown in Figure 5, grown epitaxial layer 3 on substrate 1; Because substrate has sagging groove, and the degree of depth d1 of groove is greater than the thickness d 2 of epitaxial loayer, during grown epitaxial layer, the epitaxial loayer be filled in groove cannot form non-individual body with the epitaxial loayer be formed on substrate, because epitaxial loayer is by recess divides, discontinuous at the epitaxial loayer of Grown, thus the angularity of epitaxial wafer can be reduced.
Embodiment 2
With reference to Fig. 6 to Figure 11, the step of the discontinuous epitaxial loayer preparation method of the present embodiment is as follows:
Step one, as shown in Figure 6, provide substrate 1;
Step 2, as shown in Figure 7, deposits one deck barrier layer 4 on substrate 1; The barrier layer 4 of the present embodiment is SiO
2, the thickness of barrier layer 4 is 10 microns; The thickness d 3 of barrier layer is greater than the thickness d 2 (Figure 11) of the epitaxial loayer of subsequent growth;
Step 3, as shown in Figure 8, barrier layer 4 deposits one deck photoresist layer 2; The photoresist of the present embodiment is positive glue, and the thickness of photoresist layer is also 10 microns;
Step 4, as shown in Figure 9, adopts wet development to carry out exposure imaging to photoresist layer 2, photoresist layer 2 is formed the figure of required size;
Step 5, as shown in Figure 10, adopts wet etching by the Graphic transitions on photoresist layer 2 in barrier layer 4, forms the barrier protruding from substrate surface on substrate 1 protruding;
Wet etching utilizes chemical etching liquor to carry out wet etching, etching solution is utilized to carry out removing the processing of material to barrier layer, stick to the photoresist in barrier layer after the photoresist layer of this step refers to exposure imaging, figure refers to, sticks to the shape of photoresist in barrier layer after development; In wet etching, barrier layer covered by photoresist is retained, and does not have barrier layer covered by photoresist to be etched away, thus by the Graphic transitions on photoresist in barrier layer;
Step 6, wet etching remove remaining photoresist;
Step 7, as shown in figure 11, grown epitaxial layer 3 on substrate 1; Owing to substrate having from the outstanding barrier layer of substrate surface, and the thickness of barrier layer is greater than the thickness of epitaxial loayer, and therefore the epitaxial loayer of subsequent growth is separated by barrier layer, cannot form non-individual body, thus can reduce the angularity of epitaxial wafer.Adopt the barrier of the narrow width of high thickness, make that outer layer growth is discontinuous to eliminate stress, narrow width ensures very little epitaxial loayer loss simultaneously.
The present invention by forming the region of separating epitaxial loayer on substrate---and on substrate, make groove or barrier, epitaxial loayer can not be grown continuously, to reduce the angularity of epitaxial wafer, promote quality and the yield of epitaxial wafer, reduce fragment rate.
Epitaxial loayer of the present invention is gallium nitride, and the position of groove or barrier can match with the Cutting Road of post-production chip.The present invention can make on the base material making patterned substrate, carries out patterned substrate making again after the present invention also can be utilized to make substrate, also the making of patterned substrate and the present invention can be combined and complete simultaneously.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to embodiment illustrated herein, but will meet the most wide region consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a preparation method for discontinuous epitaxial loayer, is characterized in that, comprises the following steps:
Step one, provide substrate;
Step 2, at deposited on substrates photoresist layer, the thickness of described photoresist layer is greater than the thickness of the epitaxial loayer of follow-up formation;
Step 3, exposure imaging is carried out to photoresist layer, photoresist layer is formed the figure of required size;
Step 4, by etching by the Graphic transitions on photoresist layer on substrate, substrate is formed from the recessed groove of substrate surface;
The photoresist of step 5, removal remnants;
Step 6, at Grown epitaxial loayer, to be formed on substrate by the discontinuous epitaxial loayer of recess divides.
2. the preparation method of discontinuous epitaxial loayer as claimed in claim 1, is characterized in that: described epitaxial loayer is gallium nitride.
3. the preparation method of discontinuous epitaxial loayer as claimed in claim 1, is characterized in that: the degree of depth of the groove on described substrate is greater than the thickness of epitaxial loayer.
4. the preparation method of discontinuous epitaxial loayer as claimed in claim 1, is characterized in that: the degree of depth of the groove on described substrate is 5 microns ~ 15 microns.
5. a preparation method for discontinuous epitaxial loayer, is characterized in that, comprises the following steps:
Step one, provide substrate;
Step 2, in deposited on substrates barrier layer, the thickness of described barrier layer is greater than the thickness of the epitaxial loayer of subsequent growth;
Step 3, in barrier layer, deposit photoresist layer; The thickness of described photoresist layer is greater than the thickness of the epitaxial loayer of follow-up formation;
Step 4, exposure imaging is carried out to photoresist layer, photoresist layer is formed the figure of required size;
Step 5, by etching by the Graphic transitions on photoresist layer in barrier layer, substrate forms the barrier protruding from substrate surface protruding;
The photoresist of step 6, removal remnants;
Step 7, at Grown epitaxial loayer, to be formed on substrate by the protruding separated discontinuous epitaxial loayer of barrier.
6. the preparation method of discontinuous epitaxial loayer as claimed in claim 5, is characterized in that: described barrier layer is SiO
2layer.
7. the preparation method of discontinuous epitaxial loayer as claimed in claim 5, is characterized in that: the thickness of described barrier layer is equal with the thickness of described photoresist layer.
8. the preparation method of discontinuous epitaxial loayer as claimed in claim 7, is characterized in that: the thickness of described barrier layer is 5 microns ~ 15 microns, and width is 5 microns ~ 30 microns.
9. the preparation method of discontinuous epitaxial loayer as claimed in claim 5, is characterized in that: described epitaxial loayer is gallium nitride.
10. the preparation method of the discontinuous epitaxial loayer as described in claim 3 or 4 or 7 or 8, is characterized in that: the position of described groove or barrier and the cutter of post-production chip match.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111312741A (en) * | 2020-03-06 | 2020-06-19 | 佛山市国星半导体技术有限公司 | Integrated three-dimensional Micro LED and manufacturing method thereof |
| CN111490135A (en) * | 2020-04-17 | 2020-08-04 | 南京中电熊猫平板显示科技有限公司 | Manufacturing method of micro device and manufacturing method of display back plate |
| WO2020237767A1 (en) * | 2019-05-24 | 2020-12-03 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, manufacturing method, storage medium and led chip |
| CN112802745A (en) * | 2021-01-13 | 2021-05-14 | 深圳市思坦科技有限公司 | Method for reducing warping degree of epitaxial wafer, Micro display array and Micro-LED preparation method |
| CN112802743A (en) * | 2021-01-13 | 2021-05-14 | 深圳市思坦科技有限公司 | Method for reducing warping degree of epitaxial wafer and epitaxial wafer |
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Application publication date: 20151111 |