CN111455353A - Tray for semiconductor material epitaxial growth equipment - Google Patents
Tray for semiconductor material epitaxial growth equipment Download PDFInfo
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- CN111455353A CN111455353A CN202010267123.7A CN202010267123A CN111455353A CN 111455353 A CN111455353 A CN 111455353A CN 202010267123 A CN202010267123 A CN 202010267123A CN 111455353 A CN111455353 A CN 111455353A
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- tray
- substrate
- side walls
- side wall
- inwardly
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application provides a tray for among semiconductor material epitaxial growth equipment, its characterized in that, at the bottom of convex plane tray, the side wall that inclines in, and at the bottom of convex plane tray with the groove structure who forms between the side wall that inclines in. The tray can regulate and control the warping direction of the substrate at high temperature, so that the stress type of the epitaxial layer in the cooling process is controlled, and cracks of the epitaxial layer in the cooling process are inhibited.
Description
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a tray for use in an epitaxial growth apparatus for semiconductor materials.
Background
The method comprises the following steps that a substrate is heated to a certain temperature to carry out epitaxial growth of the semiconductor material, the substrate is cooled and taken out after the growth process is completed to prepare various semiconductor devices, and the substrate warps in the temperature rising and cooling process, wherein if the substrate warps when the temperature is reduced and recovered, the semiconductor epitaxial layer is easy to crack, the device preparation is not facilitated, if the warping condition is provided with compressive stress for the epitaxial layer when the temperature is reduced and recovered, cracks are not easy to generate on the surface of the epitaxial layer, taking the most commonly used sapphire substrate as an example, according to the condition that a conventional structural tray (11) is used in MOCVD, an in-situ monitoring curve when a sapphire substrate (12) is used for epitaxially growing a three-group nitride material is shown in a graph 1(a), the in-situ monitoring curve can be obtained when the sapphire substrate warps in the temperature lowering process, the sapphire substrate (1) is used in the MOCVD process, and the curvature of the substrate (c) is increased, and is shown in a bowl-shaped epitaxial layer, and the high-quality semiconductor material can be grown in the graph 1(c) and the graph which is formed by the high-temperature-reduced and the tensile stress is increased after the temperature-reduced and the tensile stress is recovered.
However, the existing patents related to the design of the tray structure mainly focus on improving the temperature field uniformity of the epitaxial wafer, such as the utility model with application numbers 201521131002.0 and 201720956148.1, and also partially focus on improving the warpage of the substrate, such as the patent with application number 201520923976.6, the bottom surface of the substrate is vacuumized, and the pressure difference between the upper surface and the lower surface of the substrate is utilized to overcome the deformation force caused by high temperature, however, the method is slightly complicated, and the method is almost successful in suppressing the warpage of the single-side polished substrate with the rough back surface of the sample.
In order to overcome the phenomenon and inhibit the phenomenon that the epitaxial layer of the semiconductor material cracks due to improper warping of the substrate, the invention designs a novel MOCVD tray structure. The tray structure can regulate the warping direction of the substrate at high temperature, so that the stress type of the epitaxial layer in the cooling process is controlled, and the generation of cracks of the epitaxial layer in the cooling process is inhibited.
Disclosure of Invention
The application provides a tray for semiconductor material epitaxial growth equipment, which solves the technical problem that cracks are generated on a semiconductor material epitaxial layer due to an improper warping mode of a substrate.
In view of this, the present application provides a tray for use in a semiconductor material epitaxial growth apparatus, which can control a warpage direction of a substrate at a high temperature, thereby controlling a stress type applied to an epitaxial layer during a temperature reduction process and suppressing generation of epitaxial cracks during the temperature reduction process.
The tray for the semiconductor material epitaxial growth equipment comprises a convex plane tray bottom, inward-inclined side walls arranged on two sides of the convex plane tray bottom, and a groove structure between the convex plane tray bottom and the inward-inclined side walls.
Preferably, the height of the inward-inclined side wall is greater than or equal to the thickness of the substrate.
Preferably, the inwardly sloping side wall is a straight inwardly sloping side wall.
Preferably, the angle of inclination of the linear inwardly inclined side wall is greater than 0 degrees and less than 90 degrees from the surface normal of the tray.
Preferably, an included angle between the lower surface of the groove structure and a surface normal of the tray is greater than or equal to an included angle between the linear inward-inclined side wall and the surface normal of the tray.
Preferably, the inwardly sloping side wall is an arcuate side wall.
Preferably, the groove formations are at right angles to the base plane region of the tray.
Preferably, the horizontal dimension between the inward-inclined side wall (21) and the upper surface of the convex plane tray bottom (23) is more than 3 per thousand of the diameter of the placed substrate.
Preferably, the diameter of the bottom planar area of the tray is greater than 90% of the diameter of the substrate.
Preferably, the tray is made of graphite, and the surface of the tray is coated with silicon carbide or boron nitride.
Compared with the prior art, the beneficial effects of this application lie in:
according to the inward-inclined side wall and the corresponding groove structure, the phenomenon that the edge of a substrate such as sapphire is warped upwards at a high temperature is relieved and even changed into downward warping, the tensile stress caused by warping degree when the substrate is restored to a low temperature in the cooling process is reduced, even the tensile stress is converted into compressive stress, and cracks on the surface of an epitaxial layer can be effectively inhibited and even completely avoided;
the invention can regulate and control the warping degree of the substrate according to design parameters, thereby regulating the distance between the substrate and the heating element, and improving the temperature zone distribution of the substrate to a certain extent, so that the epitaxial layer of the epitaxially grown semiconductor material is more uniform.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1(a) is a graph of in-situ temperature and curvature monitoring in an MOCVD system;
FIG. 1(b) shows the warpage of the sapphire substrate before temperature rise;
FIG. 1(c) shows the warpage of the sapphire substrate after temperature rise;
FIG. 1(d) is a view showing the structure of an epitaxially grown material at a high temperature;
FIG. 1(e) is a schematic view showing cracks generated in the epitaxial layer of the semiconductor material during the temperature reduction process;
FIG. 2(a) is a schematic view of a linear inwardly sloping sidewall tray configuration according to one embodiment of the present application;
FIG. 2(b) is a schematic view of a tray with curved inward-sloping sidewalls according to another embodiment of the present application; (ii) a
FIG. 3(a) is a schematic view showing warpage of a sapphire substrate before heat treatment;
FIG. 3(b) is a schematic view showing the warpage of the sapphire substrate during the temperature raising process;
fig. 3(c) is a schematic diagram of the sapphire substrate subjected to tray modulation after temperature rise.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments.
The invention mainly aims to provide a tray for semiconductor material epitaxial growth equipment, which can effectively regulate and control the warping direction of a substrate in the epitaxial growth process, is favorable for regulating and controlling the stress state of an epitaxial layer in the cooling process and reduces the generation of cracks of the epitaxial layer.
In order to achieve the purpose, the technical scheme provided by the invention is as follows: a tray for a semiconductor material epitaxial growth device specifically comprises a side wall with a certain inward inclination angle, namely an inward-inclined side wall 21, a groove structure 22 close to the inward-inclined side wall 21 and a convex plane tray bottom 23.
The inward-inclined side wall 21 can provide downward pressure for the edge of the heated sapphire substrate, and the upward warping of the edge of the sapphire substrate is restrained; the groove structure 22 close to the inward-inclined side wall 21 can improve the modulation effect of the inward-inclined side wall 21 on the substrate warpage, and is more beneficial to the modulation of the substrate warpage by the side wall compared with the bottom of a planar tray; the convex plane tray bottom 23 is beneficial to the evacuation of gas between the lower surface of the substrate and the tray, so that the substrate is tightly attached to the tray bottom, and the occurrence of flying wafers in the epitaxial growth process is prevented.
The height of the inward-inclined side wall 21 is greater than or equal to the thickness of the substrate. Preferably, the height of the inward-inclined sidewall 21 is at least 20um higher than the thickness of the substrate to prevent flying, taking the upper surface of the tray bottom with a planar structure as a reference plane.
The inwardly sloping side wall 21 may be a straight inwardly sloping side wall. Preferably, the included angle between the inclination angle of the linear inward-inclined side wall and the surface normal of the tray is more than 0 degree and less than 90 degrees; the included angle between the lower surface of the groove structure 22 and the surface normal of the tray is larger than or equal to the included angle between the linear inward-inclined side wall and the surface normal of the tray.
The inwardly sloping side wall 21 may be an arcuate side wall, with the groove formation 22 being at right angles to the base plane region of the tray.
The size of the horizontal direction between the inward inclined side wall (21) and the upper surface of the convex plane tray bottom (23) is more than 3 per mill of the diameter of the placed substrate.
The diameter of the bottom plane area of the tray is larger than 90% of the diameter of the substrate, and the diameter of the bottom plane area of the tray is preferably equal to the diameter of the substrate.
The tray is made of graphite, and the surface of the tray is coated with silicon carbide or boron nitride.
Example 1:
referring to fig. 2(a), a tray structure for suppressing the upward warpage of the edge of a 2-inch sapphire (with a thickness of 430um) substrate according to the present invention comprises:
a linear side wall 21 with a certain inward inclination angle, wherein the inclination angle of the linear side wall is 45 degrees to the normal line of the surface of the tray, and the height of the linear side wall is 600 um;
the groove structure 22 adjacent the side wall has a lower surface that makes a 45 angle with the normal to the surface of the tray.
A convex planar structure tray bottom 23, 2 inches in diameter.
Example 2:
referring to fig. 2(b), a tray structure for suppressing the upward warpage of the edge of a 2-inch sapphire (with a thickness of 430um) substrate according to the present invention comprises:
an inward-inclined side wall 21 with an arc-shaped structure, wherein the height of the side wall is 600 um;
the groove structure 22 close to the side wall has an included angle of 90 degrees between the lower surface and the normal of the tray surface;
a convex planar structure tray bottom 23, 2 inches in diameter.
Referring to fig. 3(a), fig. 3(b), and fig. 3(c), the principle of the tray structure provided by the present invention for suppressing the upward warpage of the edge of the 2-inch sapphire substrate is described in detail as follows:
when the temperature is raised, due to the thermal expansion effect (the sapphire substrate 32 expands 1.5 per thousand in the horizontal direction every time the temperature rises by 200 ℃), the edge of the sapphire substrate gradually approaches the inward-inclined side wall 21 of the tray, and the edge gradually warps.
When the edge of the sapphire substrate 32 touches the edge of the inward-inclined sidewall 21, as shown in fig. 3(b), as the temperature continues to increase, the sapphire substrate 32 and the tray 31 continue to expand, and the tray 31 gives a downward component force to the edge of the sapphire substrate 32, thereby suppressing the sapphire substrate 32 from continuing to warp upward, and even changing the warp direction of the edge of the sapphire substrate 32, as shown in fig. 3 (c).
When the temperature is restored to low temperature after the epitaxy is finished, the warping of the sapphire substrate 32 is restrained, so that the tensile stress borne by the epitaxial layer is reduced, even the tensile stress is converted into the compressive stress, and the suppression of the surface cracks of the sample is facilitated.
The method of the present invention includes, but is not limited to, the above-described embodiments. The method can effectively control the warping of the sapphire substrate during temperature rising, further inhibit the tensile stress borne by the epitaxial layer material during the temperature lowering process, and reduce the generation probability of the surface cracks of the epitaxial layer. The substrate used in the present invention is a sapphire substrate, but is not limited to a sapphire substrate, and all kinds of substrates with edges warped upwards at high temperature are suitable.
The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (10)
1. A tray for a semiconductor material epitaxial growth device is characterized by comprising a convex plane tray bottom (23), inward-inclined side walls (21) arranged at two sides of the convex plane tray bottom (23), and a groove structure (22) between the convex plane tray bottom (23) and the inward-inclined side walls (21).
2. The tray according to claim 1, characterized in that the height of said inwardly inclined side walls (21) is greater than or equal to the thickness of the substrate placed on said tray.
3. A pallet as claimed in claim 2, characterised in that said inwardly-sloping side walls (21) are rectilinear inwardly-sloping side walls.
4. A tray according to claim 2 wherein the linear inwardly sloping side walls are inclined at an angle of greater than 0 degrees and less than 90 degrees to the surface normal of the tray.
5. A pallet as claimed in claim 4, characterised in that the lower surface of said groove structures (22) is at an angle to the normal to the surface of the pallet which is greater than or equal to the angle of said straight inwardly sloping side walls to the normal to the surface of the pallet.
6. A pallet as claimed in claim 2, characterised in that said inwardly sloping side walls (21) are curved side walls.
7. A tray as claimed in claim 6, characterized in that the groove structures (22) are at right angles to the bottom plane area of the tray.
8. A tray as claimed in claim 1, characterized in that the horizontal dimension between said inwardly-inclined side wall (21) and the upper surface of the convex-shaped planar tray bottom (23) is greater than 3% of the diameter of the substrate to be placed.
9. The tray of claim 1, wherein the tray has a bottom planar area diameter greater than 90% of the substrate diameter.
10. The tray of claim 1, wherein the tray is made of graphite, and the surface of the tray is coated with silicon carbide or boron nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010267123.7A CN111455353A (en) | 2020-04-07 | 2020-04-07 | Tray for semiconductor material epitaxial growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010267123.7A CN111455353A (en) | 2020-04-07 | 2020-04-07 | Tray for semiconductor material epitaxial growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111455353A true CN111455353A (en) | 2020-07-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010267123.7A Pending CN111455353A (en) | 2020-04-07 | 2020-04-07 | Tray for semiconductor material epitaxial growth equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113659046A (en) * | 2021-06-22 | 2021-11-16 | 华灿光电（浙江）有限公司 | Growth method of deep ultraviolet light-emitting diode epitaxial structure and graphite disc |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983093A (en) * | 2012-12-03 | 2013-03-20 | 安徽三安光电有限公司 | Graphite wafer carrier used during manufacturing process of LED epitaxy wafers |
| CN104183532A (en) * | 2013-05-24 | 2014-12-03 | 理想晶延半导体设备（上海）有限公司 | Pedestal used for bearing substrate and substrate processing method thereof |
| CN204441320U (en) * | 2015-03-04 | 2015-07-01 | 安徽三安光电有限公司 | A kind of wafer substrate |
| CN209243172U (en) * | 2018-11-27 | 2019-08-13 | 中山德华芯片技术有限公司 | A kind of graphite plate applied to lattice mismatched structures epitaxial growth |
-
2020
- 2020-04-07 CN CN202010267123.7A patent/CN111455353A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983093A (en) * | 2012-12-03 | 2013-03-20 | 安徽三安光电有限公司 | Graphite wafer carrier used during manufacturing process of LED epitaxy wafers |
| CN104183532A (en) * | 2013-05-24 | 2014-12-03 | 理想晶延半导体设备（上海）有限公司 | Pedestal used for bearing substrate and substrate processing method thereof |
| CN204441320U (en) * | 2015-03-04 | 2015-07-01 | 安徽三安光电有限公司 | A kind of wafer substrate |
| CN209243172U (en) * | 2018-11-27 | 2019-08-13 | 中山德华芯片技术有限公司 | A kind of graphite plate applied to lattice mismatched structures epitaxial growth |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113659046A (en) * | 2021-06-22 | 2021-11-16 | 华灿光电（浙江）有限公司 | Growth method of deep ultraviolet light-emitting diode epitaxial structure and graphite disc |
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Application publication date: 20200728 |