CN204437862U - A kind of sapphire printed circuit board (PCB) LED lamp - Google Patents
A kind of sapphire printed circuit board (PCB) LED lamp Download PDFInfo
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- CN204437862U CN204437862U CN201520082507.6U CN201520082507U CN204437862U CN 204437862 U CN204437862 U CN 204437862U CN 201520082507 U CN201520082507 U CN 201520082507U CN 204437862 U CN204437862 U CN 204437862U
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Abstract
The utility model relates to a kind of light fixture, refers in particular to a kind of sapphire printed circuit board (PCB) LED lamp, comprise shell, light guide module and light emitting module, light guide module and light emitting module are all fixedly installed in shell, and equal radiator structure, light guide module comprises the first sapphire substrate and reflecting layer, reflecting layer light emitting module includes the second sapphire substrate, light shield layer, metal conducting layer, illuminating module and antireflection layer, the beneficial effects of the utility model are presented as: the utility model provides a kind of sapphire printed circuit board (PCB) LED lamp with high-efficient radiating function, by arranging radiator structure on sapphire printed circuit board (PCB), directly on sapphire printed circuit board (PCB), carry out die bond, bonding wire and some glue, realize the making of LED light module, eliminate the thermal resistance that conventional print-circuit board uses adhesive to produce, improve radiating efficiency, and light shield layer is set on a printed circuit, ensure the luminous flux of illuminating module, prevent light leak, light is made to keep highlighted, its structure is simple, cost is low.
Description
Technical field
The utility model relates to a kind of light fixture, refers in particular to a kind of sapphire printed circuit board (PCB) LED lamp with strong thermal diffusivity and high brightness and preparation method thereof.
Background technology
Along with the development of society, due to LED lamp there is long working life, consume energy low, the advantage such as volume is little, light stabilisation, widely used by various lighting field or electric field, as street lamp, searchlight, signal lamp, car light, lead-in-light system, bulb lamp etc. all generally use LED light source to substitute traditional bulb.At present, LED light source is generally all fixed on circuit board and forms lamp bar by the LED lamp in society, again lamp bar is fixed on conductive metal sheet, the main heat sink mode of this circuit board reaches on conductive metal sheet by the heat that LED light source produces, by conductive metal sheet, the heat that LED lamp bar produces is dispelled the heat, due to conductive metal sheet self-radiating poor performance, its heat-sinking capability is limited, under the prerequisite of the golf calorific value of LED lamp, not by radiating effect that metallic plate is realized ideal, if LED lamp is when working long hours, huge heat can be produced, when heat cannot be discharged rapidly, it's the life-span of heat affecting light fixture pasts Yi Yin, even burn light fixture, and this kind of fitting structure is complicated, cost is low, poor practicability.
Summary of the invention
In order to solve the problem, the utility model aims to provide a kind of light fixture, refers in particular to a kind of sapphire printed circuit board (PCB) LED lamp with strong thermal diffusivity and high brightness and preparation method thereof.
Realize above-mentioned purpose, the technical solution adopted in the utility model is: a kind of sapphire printed circuit board (PCB) LED lamp, comprise shell, light guide module and light emitting module, described light guide module and light emitting module are all fixedly installed in described shell, described light guide module and the equal radiator structure of light emitting module, described light guide module comprises the first sapphire substrate and reflecting layer further, described reflecting layer is covered on described first sapphire substrate fixing, described light emitting module includes the second sapphire substrate further, light shield layer, metal conducting layer, illuminating module and antireflection layer, described second sapphire substrate is wherein coated with antireflection layer in side, opposite side is coated with light shield layer, described metal conducting layer is covered on described light shield layer fixing, described illuminating module is fixedly installed in described second sapphire substrate.
Wherein, described first sapphire substrate wherein side etching has several grooves, and be coated with reflecting layer in this side, opposite side is provided with radiator structure, described reflecting layer is metal film or blooming, and described metal film is the metal level of chromium, platinum, palladium, titanium, and described thickness of metal film is 500-2000A, described blooming is titanium dioxide or silica, and described optical film thickness is 500-1500A.
Wherein, described second sapphire substrate wherein side etching has light guide structure, described light guide structure internal fixtion is provided with illuminating module, opposite side is provided with radiator structure and is coated with antireflection layer, described second sapphire substrate is coated with light shield layer in the side with described light guide structure, described light shield layer is also coated with metal conducting layer, described light shield layer is the metal level of chromium, platinum, palladium or titanium, described light shield layer thickness is 500-2000A, described metal conducting layer is aluminium, copper, gold or silver-colored metal level, and described metallic conduction layer thickness is 500-2000A.
Wherein, described illuminating module comprises transparent insulation glue and luminescent crystal, described transparent insulation glue is fixedly installed in the light guide structure of described second sapphire substrate, described luminescent crystal is fixedly installed on described transparent insulation glue, and be electrically connected with described transparent insulation glue, described luminescent crystal is provided with the first pad, described second sapphire substrate is provided with the second pad, described first pad is connected by gold thread or alloy wire with described second pad, described second sapphire substrate is fixedly installed several lens, described lens cap is located at above described illuminating module.
Wherein, described radiator structure is respectively by some transverse concave grooves and some longitudinal flutings are interlaced is formed by stacking, and described transverse concave groove and described longitudinal fluting are arranged on described first sapphire substrate and described second sapphire substrate by etching.
Wherein, described light guide module and described light emitting module are provided with alumin(i)um zinc alloy, and by Welding Sn-Zn material, the alumin(i)um zinc alloy on described light guide module and described light emitting module is welded, and described light guide module and described light emitting module being fixedly welded in described shell simultaneously, described shell is provided with attaching plug.
A preparation method for sapphire printed circuit board (PCB) LED lamp, is characterized in that: comprise the following steps:
(1) first sapphire printed circuit board (PCB) is made, get out process for sapphire-based board raw material, be processed into the size needed for product, and it is carried out in batches the making of light guide module and light emitting module, when making light emitting module, with the radium-shine mode of high energy pulse wherein a collection of sapphire substrate make light guide structure on the surface;
(2) dip operation is carried out to the sapphire substrate after having carried out above-mentioned laser engraving, successively sapphire substrate is placed in respectively hydrochloric acid, acetone, isopropyl alcohol and methyl alcohol to soak, then with deionized water, the sapphire substrate after dip operation is cleaned;
(3) on the surface of sapphire substrate, light guide module making is carried out, first electricity consumption slurry carries out surface treatment, sapphire substrate surface roughness is increased, and by electron beam by chromium, platinum, palladium or titanium evaporation have on the surface of light guide structure at sapphire substrate and form metal light shield layer, light shield layer is etched, on the light shield layer of sapphire substrate, photoresistance is coated with spin coater, and with purple light this light shield layer exposed and develop, make light shield layer etches the planform preset as required, use photoresistance liquid removing photoresistance, use washed with de-ionized water again, complete light shield layer to make,
(4) metal conducting layer is made, first electricity consumption slurry carries out surface treatment, sapphire substrate surface roughness is increased, and by electron beam, aluminium, copper, gold or silver-colored evaporation are formed metal conducting layer on light shield layer, metal conducting layer is etched, on the metal conducting layer of sapphire substrate, photoresistance is coated with spin coater, and with purple light this metal conducting layer exposed and develop, make metal conducting layer etches the planform preset as required, use photoresistance liquid removing photoresistance, use washed with de-ionized water again, complete the making of light emitting module;
(5) radiator structure is made, all photoresistance is coated with spin coater in the two sides of sapphire substrate, with purple light sapphire substrate bottom surface exposed again and develop, by inductively electricity slurry it is etched, use photoresistance liquid removing photoresistance after completing, use washed with de-ionized water again, complete the making of sapphire printed circuit board (PCB);
(6) transparent insulation glue is set on the light guide structure of sapphire printed circuit board (PCB) with precise glue dispensing machine, by bonder, luminescent crystal is fixed on transparent insulation glue again, then baking-curing, again with bonding equipment, metal alloy wire is used luminescent crystal and sapphire printed circuit board (PCB) to be coupled together, finally directly lens are set on sapphire printed circuit board (PCB) with precise glue dispensing machine, complete the making of illuminating module;
(7) light guide module is being carried out, other a collection of sapphire substrate is carried out dip operation, successively sapphire substrate is placed in respectively hydrochloric acid, acetone, isopropyl alcohol and methyl alcohol to soak, then with deionized water, the sapphire substrate after dip operation is cleaned;
(8) electricity consumption slurry carries out surface treatment, sapphire substrate surface roughness is increased, spin coater is used to be coated with photoresistance on the surface of sapphire substrate, expose with purple light above there being the surface of photoresistance and developing again, then with inductively electricity slurry its surface is etched, make its surface form several grooves, after completing, photoresistance removes by use blocking solution of delustering, then cleans sapphire substrate by deionized water;
(9) electricity consumption slurry carries out surface treatment again, and sapphire substrate surface roughness is increased, and by evaporator metal film or blooming on the evaporation of tool reeded sapphire substrate side, the reflecting layer completing sapphire substrate makes;
(10) then electricity consumption slurry carries out surface treatment, by spin coater, upper photoresistance is all coated with to the surface of sapphire substrate and bottom surface, the ground of purple light to sapphire substrate is used to expose and develop, and by inductively electricity slurry its bottom surface is etched, photoresistance is removed with removing photoresistance liquid after completing, by deionized water, it is cleaned again, complete the making of light guide module;
(11) last, respectively alumin(i)um zinc alloy is set on light emitting module and light guide module by plating mode, with stainless steel web plate, low temperature Welding Sn-Zn material is printed on shell, light emitting module and light guide module again, Reflow Soldering or high temperature furnace is used to carry out light emitting module and being welded to each other between light guide module, light emitting module and shell, light guide module and shell, to be connected to the power positive cathode on shell again by the both positive and negative polarity of light emitting module with wiring cap, to complete the making of LED lamp.
The beneficial effects of the utility model are presented as: the utility model aims to provide a kind of use sapphire printed circuit board (PCB), and there is the LED lamp of high-efficient radiating function, by arranging radiator structure on sapphire printed circuit board (PCB), in addition, directly on sapphire printed circuit board (PCB), carry out die bond, bonding wire and some glue, realize the making of LED light module, to eliminate the thermal resistance that conventional print-circuit board uses adhesive to produce, the heat dispersion of further reinforcement sapphire substrate, improve radiating efficiency, and light shield layer is provided with on sapphire printed circuit board (PCB), ensure that the luminous flux of illuminating module is not lowered, prevent light leakage phenomena, light is made to keep highlighted, its structure is simple, cost is low, practical.
Accompanying drawing explanation
Fig. 1 is the utility model overall structure schematic diagram.
Fig. 2 is the utility model overall structure section explosive view.
Fig. 3 is the utility model light emitting module structure schematic diagram.
Fig. 4 is the utility model light emitting module internal structure schematic diagram.
Fig. 5 is the utility model light-guiding module structure schematic diagram.
Fig. 6 is the structural representation of the utility model first sapphire substrate.
Fig. 7 is the structural representation of the utility model radiator structure.
Accompanying drawing mark illustrates:
1-shell; 2-light guide module; 3-light emitting module; 4-radiator structure; 5-first sapphire substrate; 6-reflecting layer; 7-second sapphire substrate; 8-light shield layer; 9-metal conducting layer; 10-illuminating module; 11-antireflection layer; 12-groove; 13-light guide structure; 14-transparent insulation glue; 15-luminescent crystal; 16-gold thread; 17-transverse concave groove; 18-longitudinal fluting; 19-alumin(i)um zinc alloy; 20-plug.
Detailed description of the invention
Detailed description of the invention of the present utility model is described in detail below in conjunction with accompanying drawing:
As shown in figs. 1-7, a kind of sapphire printed circuit board (PCB) LED lamp, comprise shell 1, light guide module 2 and light emitting module 3, described light guide module 2 and light emitting module 3 are all fixedly installed in described shell 1, described light guide module 2 and light emitting module 3 all radiator structures 4, described light guide module 2 comprises the first sapphire substrate 5 and reflecting layer 6 further, described reflecting layer 6 is covered on described first sapphire substrate 5 fixing, described light emitting module 3 includes the second sapphire substrate 7 further, light shield layer 8, metal conducting layer 9, illuminating module 10 and antireflection layer 11, described second sapphire substrate 7 is wherein coated with antireflection layer 11 in side, opposite side is coated with light shield layer 8, described metal conducting layer 9 is covered on described light shield layer 8 fixing, described illuminating module 10 is fixedly installed in described second sapphire substrate 7.
Wherein, described first sapphire substrate 5 wherein side etching has several grooves 12, and be coated with reflecting layer 6 in this side, opposite side is provided with radiator structure 4, described reflecting layer 6 is metal film or blooming, and described metal film is the metal level of chromium, platinum, palladium, titanium, and described thickness of metal film is 500-2000A, described blooming is titanium dioxide or silica, and described optical film thickness is 500-1500A.
Wherein, described second sapphire substrate 7 wherein side etching has light guide structure 13, described light guide structure 13 internal fixtion is provided with illuminating module 10, opposite side is provided with radiator structure 4 and is coated with antireflection layer 11, described second sapphire substrate 7 is coated with light shield layer 8 in the side with described light guide structure 13, described light shield layer 8 is also coated with metal conducting layer 9, described light shield layer 8 is chromium, platinum, the metal level of palladium or titanium, described light shield layer 8 thickness is 500-2000A, described metal conducting layer 9 is aluminium, copper, golden or silver-colored metal level, described metal conducting layer 9 thickness is 500-2000A.
Wherein, described illuminating module 10 comprises transparent insulation glue 14 and luminescent crystal 15, described transparent insulation glue 14 is fixedly installed in the light guide structure 13 of described second sapphire substrate 7, described luminescent crystal 15 is fixedly installed on described transparent insulation glue 14, and be electrically connected with described transparent insulation glue 14, described luminescent crystal 15 is provided with the first pad, described second sapphire substrate 7 is provided with the second pad, described first pad is connected by gold thread 16 or alloy wire 16 with described second pad, described second sapphire substrate 7 is fixedly installed several lens 17, described lens 17 cover at above described illuminating module 10.
Wherein, described radiator structure 4 is respectively by some transverse concave grooves 17 and some longitudinal flutings 18 are interlaced is formed by stacking, and described transverse concave groove 17 and described longitudinal fluting 18 are arranged on described first sapphire substrate 5 and described second sapphire substrate 7 by etching.
Wherein, described light guide module 2 and described light emitting module 3 are provided with alumin(i)um zinc alloy 19, and by Welding Sn-Zn material, the alumin(i)um zinc alloy 19 on described light guide module 2 and described light emitting module 3 is welded, and described light guide module 2 and described light emitting module 3 being fixedly welded in described shell 1 simultaneously, described shell 1 is provided with attaching plug 20.
A preparation method for sapphire printed circuit board (PCB) LED lamp, is characterized in that: comprise the following steps:
(1) first sapphire printed circuit board (PCB) is made, get out process for sapphire-based board raw material, be processed into the size needed for product, and it is carried out in batches the making of light guide module 2 and light emitting module 3, when making light emitting module 3, with the radium-shine mode of high energy pulse wherein a collection of sapphire substrate make light guide structure 13 on the surface;
(2) dip operation is carried out to the sapphire substrate after having carried out above-mentioned laser engraving, successively sapphire substrate is placed in respectively hydrochloric acid, acetone, isopropyl alcohol and methyl alcohol to soak, then with deionized water, the sapphire substrate after dip operation is cleaned;
(3) on the surface of sapphire substrate, carry out light guide module 2 to make, first electricity consumption slurry carries out surface treatment, sapphire substrate surface roughness is increased, and by electron beam by chromium, platinum, palladium or titanium evaporation have on the surface of light guide structure 13 at sapphire substrate and form metal light shield layer 8, light shield layer 8 is etched, on the light shield layer 8 of sapphire substrate, photoresistance is coated with spin coater, and with purple light, this light shield layer 8 is exposed and developed, make light shield layer 8 etches the planform preset as required, use photoresistance liquid removing photoresistance, use washed with de-ionized water again, complete light shield layer 8 to make,
(4) metal conducting layer 9 is made, first electricity consumption slurry carries out surface treatment, sapphire substrate surface roughness is increased, and by electron beam, aluminium, copper, gold or silver-colored evaporation are formed metal conducting layer 9 on light shield layer 8, metal conducting layer 9 is etched, on the metal conducting layer 9 of sapphire substrate, photoresistance is coated with spin coater, and with purple light, this metal conducting layer 9 is exposed and developed, make metal conducting layer 9 etches the planform preset as required, use photoresistance liquid removing photoresistance, use washed with de-ionized water again, complete the making of light emitting module 3;
(5) radiator structure 4 is made, all photoresistance is coated with spin coater in the two sides of sapphire substrate, with purple light sapphire substrate bottom surface exposed again and develop, by inductively electricity slurry it is etched, use photoresistance liquid removing photoresistance after completing, use washed with de-ionized water again, complete the making of sapphire printed circuit board (PCB);
(6) with precise glue dispensing machine, transparent insulation glue 14 is set on the light guide structure 13 of sapphire printed circuit board (PCB), by bonder, luminescent crystal 15 is fixed on transparent insulation glue 14 again, then baking-curing, again with bonding equipment, metal alloy wire 16 is used luminescent crystal 15 and sapphire printed circuit board (PCB) to be coupled together, finally directly lens 17 are set on sapphire printed circuit board (PCB) with precise glue dispensing machine, complete the making of illuminating module 10;
(7) light guide module 2 is being carried out, other a collection of sapphire substrate is carried out dip operation, successively sapphire substrate is placed in respectively hydrochloric acid, acetone, isopropyl alcohol and methyl alcohol to soak, then with deionized water, the sapphire substrate after dip operation is cleaned;
(8) electricity consumption slurry carries out surface treatment, sapphire substrate surface roughness is increased, spin coater is used to be coated with photoresistance on the surface of sapphire substrate, expose with purple light above there being the surface of photoresistance and developing again, then with inductively electricity slurry its surface is etched, make its surface form several grooves 12, after completing, photoresistance removes by use blocking solution of delustering, then cleans sapphire substrate by deionized water;
(9) electricity consumption slurry carries out surface treatment again, and sapphire substrate surface roughness is increased, and by evaporator metal film or blooming on the sapphire substrate side evaporation with groove 12, the reflecting layer 6 completing sapphire substrate makes;
(10) then electricity consumption slurry carries out surface treatment, by spin coater, upper photoresistance is all coated with to the surface of sapphire substrate and bottom surface, the ground of purple light to sapphire substrate is used to expose and develop, and by inductively electricity slurry its bottom surface is etched, photoresistance is removed with removing photoresistance liquid after completing, by deionized water, it is cleaned again, complete the making of light guide module 2;
(11) last, respectively alumin(i)um zinc alloy 19 is set on light emitting module 3 and light guide module 2 by plating mode, with stainless steel web plate, low temperature Welding Sn-Zn material is printed on shell 1, light emitting module 3 and light guide module 2 again, Reflow Soldering or high temperature furnace is used to carry out light emitting module 3 and being welded to each other between light guide module 2, light emitting module 3 and shell 1, light guide module 2 and shell 1, to be connected to the power positive cathode on shell 1 again by the both positive and negative polarity of light emitting module 3 with wiring cap, to complete the making of LED lamp.
Making of the present utility model is specifically divided into two parts, comprise light emitting module 3 and light guide module 2, luminous component and radiator portion is included again in light emitting module 3, when making luminous component, first, get out the sapphire substrate to be processed that thickness is 300-500um, with high energy pulse laser, the radium-shine processing that 50-250 power second is 500W is carried out to sapphire substrate, making the surface of sapphire substrate to be formed several degree of depth is 200-400um, and width is the groove 12 of 100-200um;
Then, sapphire substrate after radium-shine processing is immersed in 5-30 minute in the hydrochloric acid of 5-20wt%, afterwards, 5-30 minute is soaked again with acetone, again sapphire substrate is placed in isopropyl alcohol after taking-up and soaks 1-10 minute, then 1-10 minute in methyl alcohol is immersed in, re-use the cleaning that the sapphire substrate after immersion operation carries out 1-10 minute by deionized water, then be 200-400W at electrode power, argon gas is 100-300sccm, pressure is under the condition of 0.2-3.0mbar, electricity consumption is made to starch the surface treatment sapphire substrate cleaned being carried out to 20-80 second, make sapphire substrate surface presentation roughened state, to increase its surface roughness,
Then, sapphire substrate after surface treatment plates metal level, first on sapphire substrate, plate light shield layer 8, pass through electron beam evaporation plating, surface coverage a layer thickness of sapphire substrate is made to be the chromium of 500-2000A, platinum, the single metal layer such as palladium or titanium or many metal bonding layers, under the condition of 500-1200rpm, the sapphire substrate of light shield layer 8 is had to carry out the light blockage coating operation of 10-60 second to plating with spin coater again, photoresistance thickness is 8000-10000A, and will the baking of the sapphire substrate after photoresistance 10-25 minute be coated with 100-150 DEG C, with the purple light of 8-20Mw, the sapphire substrate being coated with photoresistance is carried out to the exposure of 6-20 second again, carry out the development of 20-80 second thereupon, with 100-150 DEG C, 10-25 minute is toasted to the sapphire substrate after development again, the metal etch liquid of the 1-10wt% corresponding to light shield layer 8 metal used is used to have light shield layer 8 to carry out the etching of 1-10 minute with the sapphire substrate being coated with photoresistance to evaporation, by deionized water, the sapphire substrate after etching is carried out the cleaning of 1-10 minute after completing, with 100-150 DEG C, sapphire substrate is carried out to the baking of 10-25 minute again, be 200-400W by sapphire substrate at electrode power again, argon gas is 100-300sccm, pressure is under the condition of 0.2-3.0mbar, electricity consumption is starched and carries out the process of surface treatment roughness, it is made to increase surface roughness, complete the plating operation of light shield layer 8 on the surface,
Have in evaporation on the sapphire substrate of light shield layer 8 again and plate metal conducting layer 9, first by complete plating light shield layer 8 operate after sapphire substrate pass through electron beam evaporation plating, on sapphire substrate, evaporation one deck envelope lives the aluminium of light shield layer 8, copper, gold, the single metal layer of silver or other associate conductive metals or many metal bonding layers, its thickness is 500-2000A, the sapphire substrate of metal-coated conductive layer 9 is carried out to the light blockage coating operation of 10-60 second under the condition of 500-1200rpm with spin coater, photoresistance thickness is 8000-10000A, and will the baking of the sapphire substrate after photoresistance 10-25 minute be coated with 100-150 DEG C, with the purple light of 8-20Mw, the sapphire substrate being coated with photoresistance is carried out to the exposure of 6-20 second again, carry out the development of 20-80 second thereupon, with 100-150 DEG C, 10-25 minute is toasted to the sapphire substrate after development again, the metal etch liquid of the 1-10wt% corresponding to metal conducting layer 9 metal used is used to have metal conducting layer 9 to carry out the etching of 1-10 minute with the sapphire substrate being coated with photoresistance to evaporation, by deionized water, the sapphire substrate after etching is carried out the cleaning of 1-10 minute after completing, with 100-150 DEG C, sapphire substrate is carried out to the baking of 10-25 minute again, complete the evaporation operation of metal conducting layer 9, thus to define with sapphire be the printed circuit board (PCB) of substrate,
Continuing at electrode power is 200-400W, argon gas is 100-300sccm, pressure is under the condition of 0.2-3.0mbar, the surface treatment carrying out 20-80 second is starched to sapphire printed circuit board (PCB) making electricity consumption, its surface roughness is increased, again illuminating module 10 is set on sapphire printed circuit board (PCB), specifically comprise transparent insulation glue 14 and luminescent crystal 15, wherein transparent insulation glue 14 is containing transparent insulation glue 14, yellow fluorescent powder and red fluorescence powder, its corresponding proportion is for being more than or equal to 1:0.10-0.30:0.002-0.020, click and enter in the groove 12 of sapphire printed circuit board (PCB) by precise glue dispensing machine, and with bonder, luminescent crystal 15 is fixedly installed on transparent insulation glue 14, with 120-160 DEG C, the sapphire printed circuit board (PCB) being provided with illuminating module 10 is carried out to the baking-curing of 60-120 minute again,
Subsequently, then use gold or other alloy wires 16 with bonding equipment, the first pad on luminescent crystal 15 and the second pad on sapphire printed circuit board (PCB) are coupled together;
Finally radiator structure 4 is set on sapphire printed circuit board (PCB), be 200-400W by sapphire printed circuit board (PCB) at electrode power, argon gas is 100-300sccm, pressure is under the condition of 0.2-3.0mbar, electricity consumption is made to starch the surface treatment carrying out 20-80 second, increase its surface roughness, sapphire printed circuit board (PCB) after process is placed in spin coater, by spin coater with the 500-1200rpm photoresistance that equal coating thickness is 8000-10000A on the light guiding surface and bottom surface of sapphire printed circuit board (PCB), and with 100-150 DEG C to the sapphire printed circuit board (PCB) baking 10-25 minute after coating photoresistance, the exposure of 6-20 second is carried out in the bottom surface of purple light to the sapphire printed circuit board (PCB) being coated with photoresistance re-using 8-20Mw, again through developing 20-80 second, and the sapphire printed circuit board (PCB) after development is carried out 100-150 DEG C of baking 10-25 minute, the bottom surface of sapphire printed circuit board (PCB) carried out to the etching of 1-20 minute by inductively electricity slurry, the bottom surface of sapphire printed circuit board (PCB) is made to form radiator structure 4, this radiator structure 4 by several transverse concave grooves 17 and several longitudinal flutings 18 mutually orthogonal be distributed on the bottom surface of sapphire printed circuit board (PCB), then after the residual photoresistance on sapphire printed circuit board (PCB) being removed with removing photoresistance liquid, sapphire printed circuit board (PCB) is put in ionized water and cleans 1-10 minute, carried out 100-150 DEG C of baking 10-25 minute again, complete the making of light emitting module 3.
When making light guide module 2, first light guide structure 13 is made in sapphire substrate, first needing the sapphire substrate carrying out processing to be immersed in 5-30 minute in the hydrochloric acid of 5-20wt%, put it in acetone again and soak 5-30 minute, then put isopropyl alcohol into after taking out and soak 1-10 minute, be placed on again in methyl alcohol after completing to soak after 1-10 minute and take out.
Subsequently, be 200-400W by the sapphire substrate after dip operation at electrode power, argon gas is 100-300sccm, and pressure is under the condition of 0.2-3.0mbar, make electricity consumption starch the surface treatment carrying out 20-80 second, make sapphire substrate surface presentation roughened state to increase its surface roughness.
Then, be placed in spin coater by have passed through the sapphire substrate after surface treatment, on the surface of sapphire substrate, photoresistance is coated with 500-1200rpm by spin coater, and toast 10-25 minute with 100-150 DEG C, the exposure of 6-20 second is carried out again with the surface of purple light to the sapphire substrate being coated with photoresistance of 8-20Mw, through developing 20-80 second after completing, then through 100-150 DEG C of baking 10-25 minute.
Then, use sense answers coupled plasma to carry out etching 1-20 minute to the sapphire substrate after immersion and light process, sapphire substrate surface is made to form the shape of several these grooves 12 of groove 12, size and quantity etc. can be changed by different etching operations according to actual production demand, the photoresistance that left behind after removing the process of sapphire substrate glazing with removing photoresistance liquid again, after using washed with de-ionized water 1-10 minute afterwards, again with 100-150 DEG C of baking 10-25 minute, be 200-400W by sapphire substrate after treatment at electrode power, argon gas is 100-300sccm, pressure is under the condition of 0.2-3.0mbar, electricity consumption is made to starch the surface treatment carrying out 20-80 second, make through overetched sapphire substrate rough surface, increase surface roughness, to sapphire substrate evaporating coating layer after completing, by evaporator, metal coating or blooming are deposited on the surface of sapphire substrate, metal coating on evaporation can be chromium, platinum, palladium, the single metal layers such as titanium or many metal bonding layers, and its thickness is 500-2000A, during blooming on evaporation, thickness is 500-2000A, the making of the sapphire substrate of anti-dazzle can be completed after completing.
When sapphire substrate arranges radiator structure 4; sapphire substrate is placed in spin coater; the surface in sapphire substrate with 500-1200rpm by spin coater with groove 12 is coated with photoresistance; and with 100-150 DEG C of baking 10-25 minute, protect the surface pattern of sapphire substrate with this.
Be 200-400W by sapphire substrate at electrode power again, argon gas is 100-300sccm, pressure is under the condition of 0.2-3.0mbar, electricity consumption is made to starch the surface treatment carrying out 20-80 second, increase its surface roughness, sapphire substrate after process is placed in spin coater, by spin coater with the 500-1200rpm photoresistance that equal coating thickness is 8000-10000A on the light guiding surface and bottom surface of sapphire substrate, and with 100-150 DEG C to the sapphire substrate baking 10-25 minute after the upper photoresistance of coating.
The bottom surface of purple light to the sapphire substrate being coated with photoresistance of 8-20Mw is used to carry out the exposure of 6-20 second, again through developing 20-80 second, and the sapphire substrate after development is carried out 100-150 DEG C of baking 10-25 minute, by inductively electricity slurry etching 1-20 minute is carried out to the bottom surface of sapphire substrate, the bottom surface of sapphire substrate is made to form radiator structure 4, this radiator structure 4 by several transverse concave grooves 17 and several longitudinal flutings 18 mutually orthogonal be distributed on the bottom surface of sapphire substrate, after using blocking solution of delustering to be removed by the residual photoresistance on sapphire substrate, sapphire substrate is put in ionized water and cleans 1-10 minute, carried out 100-150 DEG C of baking 10-25 minute again, complete the making of light guide module 2.
Finally, respectively alumin(i)um zinc alloy 19 is set on light emitting module 3 and light guide module 2 by plating mode, with stainless steel web plate, low temperature Welding Sn-Zn material is printed on shell 1, light emitting module 3 and light guide module 2 again, Reflow Soldering or high temperature furnace is used to carry out light emitting module 3 and being welded to each other between light guide module 2, light emitting module 3 and shell 1, light guide module 2 and shell 1, to be connected to the power positive cathode on shell 1 again by the both positive and negative polarity of light emitting module 3 with wiring cap, to complete the making of LED lamp.
The above, it is only preferred embodiment of the present utility model, not technical scope of the present utility model is imposed any restrictions, the technical staff of the industry, under the inspiration of the technical program, some distortion and amendment can be made, every above embodiment is done according to technical spirit of the present utility model any amendment, equivalent variations and modification, all still belong in the scope of technical solutions of the utility model.
Claims (6)
1. a sapphire printed circuit board (PCB) LED lamp, it is characterized in that: comprise shell, light guide module and light emitting module, described light guide module and light emitting module are all fixedly installed in described shell, described light guide module and light emitting module are provided with radiator structure, described light guide module comprises the first sapphire substrate and reflecting layer further, described reflecting layer is covered on described first sapphire substrate fixing, described light emitting module includes the second sapphire substrate further, light shield layer, metal conducting layer, illuminating module and antireflection layer, described second sapphire substrate is wherein coated with antireflection layer in side, opposite side is coated with light shield layer, described metal conducting layer is covered on described light shield layer fixing, described illuminating module is fixedly installed in described second sapphire substrate.
2. a kind of sapphire printed circuit board (PCB) LED lamp according to claim 1, it is characterized in that: described first sapphire substrate wherein side etching has several grooves, and be coated with reflecting layer in this side, opposite side is provided with radiator structure, described reflecting layer is metal film or blooming, described thickness of metal film is 500-2000A, and described blooming is titanium dioxide or silica, and described optical film thickness is 500-1500A.
3. a kind of sapphire printed circuit board (PCB) LED lamp according to claim 1, it is characterized in that: described second sapphire substrate wherein side etching has light guide structure, described light guide structure internal fixtion is provided with illuminating module, opposite side is provided with radiator structure and is coated with antireflection layer, described second sapphire substrate is coated with light shield layer in the side with described light guide structure, described light shield layer is also coated with metal conducting layer, described light shield layer is chromium, platinum, the metal level of palladium or titanium, described light shield layer thickness is 500-2000A, described metal conducting layer is aluminium, copper, golden or silver-colored metal level, described metallic conduction layer thickness is 500-2000A.
4. a kind of sapphire printed circuit board (PCB) LED lamp according to claim 1, it is characterized in that: described illuminating module comprises transparent insulation glue and luminescent crystal, described transparent insulation glue is fixedly installed in the light guide structure of described second sapphire substrate, described luminescent crystal is fixedly installed on described transparent insulation glue, and be electrically connected with described transparent insulation glue, described luminescent crystal is provided with the first pad, described second sapphire substrate is provided with the second pad, described first pad is connected by gold thread or alloy wire with described second pad, described second sapphire substrate is fixedly installed several lens, described lens cap is located at above described illuminating module.
5. a kind of sapphire printed circuit board (PCB) LED lamp according to claim 1, it is characterized in that: described radiator structure is respectively by some transverse concave grooves and some longitudinal flutings are interlaced is formed by stacking, and described transverse concave groove and described longitudinal fluting are arranged on described first sapphire substrate and described second sapphire substrate by etching.
6. a kind of sapphire printed circuit board (PCB) LED lamp according to claim 1, it is characterized in that: described light guide module and described light emitting module are provided with alumin(i)um zinc alloy, and by Welding Sn-Zn material, the alumin(i)um zinc alloy on described light guide module and described light emitting module is welded, and described light guide module and described light emitting module being fixedly welded in described shell simultaneously, described shell is provided with attaching plug.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520082507.6U CN204437862U (en) | 2015-02-06 | 2015-02-06 | A kind of sapphire printed circuit board (PCB) LED lamp |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520082507.6U CN204437862U (en) | 2015-02-06 | 2015-02-06 | A kind of sapphire printed circuit board (PCB) LED lamp |
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| CN204437862U true CN204437862U (en) | 2015-07-01 |
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| CN201520082507.6U Withdrawn - After Issue CN204437862U (en) | 2015-02-06 | 2015-02-06 | A kind of sapphire printed circuit board (PCB) LED lamp |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104613379A (en) * | 2015-02-06 | 2015-05-13 | 东莞佰鸿电子有限公司 | Sapphire printed circuit board LED lamp and manufacture method thereof |
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2015
- 2015-02-06 CN CN201520082507.6U patent/CN204437862U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104613379A (en) * | 2015-02-06 | 2015-05-13 | 东莞佰鸿电子有限公司 | Sapphire printed circuit board LED lamp and manufacture method thereof |
| CN104613379B (en) * | 2015-02-06 | 2017-12-26 | 东莞佰鸿电子有限公司 | A kind of sapphire printed circuit board (PCB) LED lamp and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20150701 Effective date of abandoning: 20171226 |