CN204434535U - Wafer gluing membrane structure - Google Patents
Wafer gluing membrane structure Download PDFInfo
- Publication number
- CN204434535U CN204434535U CN201520057106.5U CN201520057106U CN204434535U CN 204434535 U CN204434535 U CN 204434535U CN 201520057106 U CN201520057106 U CN 201520057106U CN 204434535 U CN204434535 U CN 204434535U
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- Prior art keywords
- release film
- conduction viscose
- viscose sheet
- wafer
- membrane structure
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Abstract
The utility model discloses a kind of wafer gluing membrane structure, comprises the conduction viscose sheet, the first release film and the second release film that are formed by metal foil printing.First release film covers a surface of conduction viscose sheet completely, and the first release film has the first edge sealing exceeding conduction viscose sheet periphery.Second release film covers another surface of conduction viscose sheet completely relative to the first release film, second release film has the second edge sealing exceeding conduction viscose sheet periphery, and conduction viscose sheet is enclosed between the first release film and the second release film by the electrostatic adhesion between the second edge sealing and this first edge sealing; Use the gluing film of homogenizing and thinning by this, to simplify semiconductor technology and to promote yield.
Description
Technical field
The utility model relates to a kind of viscose for semi-conductor, particularly relates to a kind of wafer gluing membrane structure.
Background technology
In the technique of conventional semiconductor device, be use liquid glutinous brilliant glue (or being called die bond agent) to be attached on element mounting portion by chip) always.This die bond technique glutinous brilliant glue is coated on wafer bottom surface to be cured and shapingly to fix chip, precisely because gluing mode by equipment such as glue-injection machines, therefore significantly need increase process costs.In addition, due to injecting glue process pressure-controlling not easily, therefore often have the situation of excessive glue to occur, cause product yield to decline.
Moreover along with the technology constantly progress of highly denseization semi-conductor, the compact demand then becoming the high-tech current situation, the dimensional requirement of element is also increasingly strict.For this reason, component configuration using the glutinous brilliant glue of homogenizing and thinning and reduces the thickness of component configuration, is namely the direction that dealer actively researches and develops.Such as form the gluing membrane structure with homogenizing and thinning, use and simplify semiconductor technology and promote yield, this is research motivation of the present utility model.
Utility model content
An object of the present utility model, is to provide a kind of wafer gluing membrane structure, and it uses the gluing film of homogenizing and thinning, uses and simplifies semiconductor technology and promote yield.
For reaching above-mentioned purpose, the utility model provides a kind of wafer gluing membrane structure, and it comprises:
One conduction viscose sheet;
One first release film, cover a surface of this conduction viscose sheet completely, this first release film has one first edge sealing exceeding this conduction viscose sheet periphery; And
One second release film, another surface of this conduction viscose sheet is covered completely relative to this first release film, this second release film has one second edge sealing exceeding this conduction viscose sheet periphery, and this conduction viscose sheet is enclosed between this first release film and this second release film by the electrostatic adhesion between this second edge sealing and this first edge sealing.
Above-mentioned wafer gluing membrane structure, wherein this conduction viscose sheet is formed by heat-curable epoxy resin hybrid conductive material.
Above-mentioned wafer gluing membrane structure, wherein the area of this conduction viscose sheet is greater than the area of described wafer.
Above-mentioned wafer gluing membrane structure, wherein this conduction viscose sheet is rounded.
Above-mentioned wafer gluing membrane structure, wherein this conduction viscose sheet is formed by metal foil printing.
Above-mentioned wafer gluing membrane structure, wherein this first release film and this second release film are formed by polyethylene terephthalate.
Compared to prior art, the release film area of wafer gluing membrane structure of the present utility model is greater than the area of conduction viscose sheet, conduction viscose sheet is placed in after between two release films, by electrostatic adsorption force mutual between two release films, conduction viscose sheet is enclosed between the two again, wherein, conduction viscose sheet forms the uniform thinning film of thickness by metal foil printing, effectively can control film stock thickness (film amount) by this and Simplified flowsheet, save the viscose equipment (viscose machine) etc. that tradition must use, therefore can significantly reduce costs and improve product yield.
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail, but not as to restriction of the present utility model.
Accompanying drawing explanation
The perspective exploded view of Fig. 1 the utility model wafer gluing membrane structure;
The assembled sectional view of Fig. 2 wafer gluing of the present utility model membrane structure;
Fig. 3 wafer gluing of the present utility model film tears the use schematic diagram of release film off;
Fig. 4 wafer gluing of the present utility model film pastes the use schematic diagram of wafer;
Fig. 5 wafer gluing of the present utility model film is in conjunction with the sectional view of wafer;
Fig. 6 wafer gluing of the present utility model film is in conjunction with its use schematic diagram of wafer.
Wherein, Reference numeral
1 ... wafer gluing film
2 ... wafer
2 ' ... chip
3 ... substrate
10,10 ' ... conduction viscose sheet
101 ... first surface
102 ... second surface
20 ... first release film
21 ... first edge sealing
30 ... second release film
31 ... second edge sealing
40 ... dicing tape
Embodiment
Relevant detailed description of the present utility model and technology contents, coordinate accompanying drawing to be described as follows, but institute's accompanying drawings only provides reference and explanation use, is not used for being limited the utility model.
Please refer to Fig. 1 and Fig. 2, be respectively perspective exploded view and the assembled sectional view of wafer gluing membrane structure of the present utility model.The utility model provides a kind of wafer gluing film 1 structure, and it is for binding a wafer 2, is bonded to bonding agent needed for the substrate 3 of semiconductor element to provide wafer 2 (chip).This wafer gluing film 1 comprises conduction viscose sheet 10,1 first release film 20 and one second release film 30.This conduction viscose sheet 10 is interposed between this first release film 20 and this second release film 30.After the structure of this wafer gluing film 1 is more specified in.
The solid-state glue of this conduction viscose sheet 10 for having electroconductibility, preferably, this conduction viscose sheet 10 be by heat-curable epoxy resin hybrid conductive material (as silver powder etc.) form, and via made by steel plate printing, only actual when implementing not as restriction.
The area of this first release film 20 is greater than the area of this conduction viscose sheet 10, that is, this first release film 20 covers a first surface 101 of this conduction viscose sheet 10 completely, and this first release film 10 has one first edge sealing 11 exceeding this conduction viscose sheet 10 periphery.
Again, the area of this second release film 30 is also greater than the area of this conduction viscose sheet 10, that is this second release film 30 covers a second surface 102 of this conduction viscose sheet 10 completely relative to this first release film 20.This second release film 30 has one second edge sealing 31 exceeding this conduction viscose sheet 10 periphery.During actual enforcement, this conduction viscose sheet 10 can be enclosed between this first release film 20 and this second release film 30 by the electrostatic adsorption produced between this second edge sealing 31 and this first edge sealing 21.
In an embodiment of the present utility model, this first release film and this second release film are formed by polyethylene terephthalate (polyethylene terephthalate, PET).In addition, this conduction viscose sheet 10 is roughly rounded, and this conduction viscose sheet 10 can be made coil type product after being interposed in this first release film 20 and this second release film 30, in order to transporting and being used in subsequent technique.
Please continue with reference to Fig. 3 and Fig. 4, be respectively wafer gluing film of the present utility model and tear the use schematic diagram of release film off and paste the use schematic diagram of wafer.Wafer gluing film 1 of the present utility model, for binding wafer 2, is bonded to bonding agent needed for the substrate 3 of semiconductor element to provide wafer 2 (forming chip after cutting).When using this wafer gluing film 1, first the first release film 20 and the second release film 30 be covered on this conduction viscose sheet 10 surface is torn off, then this conduction viscose sheet 10 is attached on a dicing tape 40, follow-uply this wafer 2 to be placed on this conduction viscose sheet 10 again, accordingly this wafer 2 to be attached to this conduction viscose sheet 1.Preferably, the area of this conduction viscose sheet 10 is slightly larger than the area with this wafer 2.
Separately with reference to Fig. 5 and Fig. 6, wafer gluing film of the present utility model please be respectively in conjunction with the sectional view of wafer and use schematic diagram thereof.Hold, a conduction viscose sheet 10 ' that can take out separately a wherein chip 2 ' after cutting this wafer 2 and this conduction viscose sheet 10 and attach.Finally, pick up this chip 2 ' on this dicing tape 40 and this conduction viscose sheet 10 ', and be placed on the substrate 3 of semiconductor element and (put crystalline substance), to carry out the subsequent techniques such as follow-up routing, sealing and test.
Certainly; the utility model also can have other various embodiments; when not deviating from the utility model spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the utility model, but these change accordingly and are out of shape the protection domain that all should belong to the claim appended by the utility model.
Claims (6)
1. a wafer gluing membrane structure, is characterized in that, comprising:
One conduction viscose sheet;
One first release film, cover a surface of this conduction viscose sheet completely, this first release film has one first edge sealing exceeding this conduction viscose sheet periphery; And
One second release film, another surface of this conduction viscose sheet is covered completely relative to this first release film, this second release film has one second edge sealing exceeding this conduction viscose sheet periphery, and this conduction viscose sheet is enclosed between this first release film and this second release film by the electrostatic adhesion between this second edge sealing and this first edge sealing.
2. wafer gluing membrane structure according to claim 1, is characterized in that, this conduction viscose sheet is formed by heat-curable epoxy resin hybrid conductive material.
3. wafer gluing membrane structure according to claim 1, is characterized in that, the area of this conduction viscose sheet is greater than the area of described wafer.
4. wafer gluing membrane structure according to claim 1, is characterized in that, this conduction viscose sheet is rounded.
5. wafer gluing membrane structure according to claim 1, is characterized in that, this conduction viscose sheet is formed by metal foil printing.
6. wafer gluing membrane structure according to claim 1, is characterized in that, this first release film and this second release film are formed by polyethylene terephthalate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520057106.5U CN204434535U (en) | 2015-01-27 | 2015-01-27 | Wafer gluing membrane structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520057106.5U CN204434535U (en) | 2015-01-27 | 2015-01-27 | Wafer gluing membrane structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204434535U true CN204434535U (en) | 2015-07-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520057106.5U Active CN204434535U (en) | 2015-01-27 | 2015-01-27 | Wafer gluing membrane structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN204434535U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206382A (en) * | 2016-08-30 | 2016-12-07 | 浙江中纳晶微电子科技有限公司 | The processing method that flake workpiece is bonded temporarily |
-
2015
- 2015-01-27 CN CN201520057106.5U patent/CN204434535U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206382A (en) * | 2016-08-30 | 2016-12-07 | 浙江中纳晶微电子科技有限公司 | The processing method that flake workpiece is bonded temporarily |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230720 Address after: Room 602, Building 7, No. 6, Shangsha Zhongnan Road, Chang'an Town, Dongguan City, Guangdong Province Patentee after: Dongguan Debang Yihua Materials Co.,Ltd. Address before: Longtan Taiwan Taoyuan County China Xiang Gao Yang Road 238 Lane 125 Lane 24 Patentee before: YIZTECH CO.,LTD. |
|
| TR01 | Transfer of patent right |