CN204391138U - A kind of preparation system of selectivity emission electrode solar cell - Google Patents
A kind of preparation system of selectivity emission electrode solar cell Download PDFInfo
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- CN204391138U CN204391138U CN201420637101.5U CN201420637101U CN204391138U CN 204391138 U CN204391138 U CN 204391138U CN 201420637101 U CN201420637101 U CN 201420637101U CN 204391138 U CN204391138 U CN 204391138U
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- pipeline
- solar cell
- emission electrode
- preparation system
- electrode solar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of preparation system of selectivity emission electrode solar cell, comprise etching device, the first screen printing apparatus, thermal diffusion equipment, remove PSG and edge etching apparatus, antireflective film depositing device, the second screen printing apparatus and agglomerating plant; Described thermal diffusion equipment comprises boiler tube, POCl
3device, large N
2pipeline, little N
2pipeline, O
2pipeline, O
3pipeline and uviol lamp, described POCl
3device, large N
2pipeline, little N
2pipeline, O
2pipeline, O
3pipeline is all connected with described boiler tube.Adopt this preparation system, can prevent phosphorus slurry volatile matter in thermal diffusion process from, on the impact of silicon chip, improving the presentation quality of silicon chip, ensureing the conversion efficiency of battery.
Description
Technical field
The utility model relates to solar cell preparation field, particularly relates to a kind of preparation system of selectivity emission electrode solar cell.
Background technology
Selectivity emission electrode is exactly carry out heavy doping (deeply spreading) at the contact position of front side of silicon wafer and metal grid lines electrode, and the area of silicon wafer between metal grid lines electrode carries out light dope (shallow diffusion).The beneficial effect of the battery of this structure is: because heavily doped region surface concentration is high, and theoretical according to Metal-Semiconductor Contact Resistance, the contact resistance of battery is little; The recombination rate of charge carrier and doping content square inversely, lightly doped region can reduce the compound of charge carrier, improves the collection efficiency of charge carrier; The absorption of the incident light (shortwave) of 20% energy occurs in the diffusion layer of battery, and shallow diffusion is conducive to the quantum efficiency of shortwave solar photon, is conducive to the lifting of battery efficiency.
Silk screen printing phosphorus source single step diffusion method is a kind of effective ways obtaining selectivity emission electrode battery, and the advantage of this selectivity emission electrode battery is that preparation method's technique is simple, and cost is low, can industrialization on a large scale.But, because the phosphorus slurry of printing is containing a lot of composition, can evaporate in diffusion furnace tube, these impurity in silicon chip surface deposition or can carry out various physical-chemical reaction with silicon, make silicon chip occur bad order, as there is spot, battery efficiency room for promotion is limited.
Summary of the invention
Technical problem to be solved in the utility model is, provides a kind of preparation system of selectivity emission electrode solar cell, can prevent phosphorus from starching volatile matter to the impact of silicon chip, improve the presentation quality of silicon chip, ensure the conversion efficiency of battery.
In order to solve the problems of the technologies described above, the utility model provides a kind of preparation system of selectivity emission electrode solar cell, comprises etching device, the first screen printing apparatus, thermal diffusion equipment, removes PSG and edge etching apparatus, antireflective film depositing device, the second screen printing apparatus and agglomerating plant; Described thermal diffusion equipment comprises boiler tube, POCl
3device, large N
2pipeline, little N
2pipeline, O
2pipeline, O
3pipeline and uviol lamp, described POCl
3device, large N
2pipeline, little N
2pipeline, O
2pipeline, O
3pipeline is all connected with described boiler tube.
Wherein, described etching device is existing for the equipment to silicon chip surface making herbs into wool;
Described thermal diffusion equipment is used for carrying out thermal diffusion to silicon chip;
The equipment that the described PSG of going (Phospho Silicate Glass phosphorosilicate glass) and edge etching apparatus are existing phosphorosilicate glass for removing silicon chip surface and etch silicon chip edge;
Described antireflective film depositing device is existing equipment silicon chip being carried out to front antireflective film depositing operation;
Described agglomerating plant is the existing equipment carrying out sintering sizing for double finished product silicon chip;
Described POCl
3device is existing by POCl
3solution and the N passed into
2the equipment of mixing;
Described boiler tube is used for the surface treatment place as silicon chip.
As the improvement of such scheme, described O
2pipeline and O
3common and the O of pipeline inlet end
2air inlet pipe connects, and outlet side is connected with described boiler tube; Described large N
2pipeline and little N
2common and the N of pipeline inlet end
2air inlet pipe connects, and outlet side is connected with described boiler tube, described little N
2pipeline is provided with described POCl
3device.
As the improvement of such scheme, described O
2pipeline and O
3pipeline outlet side and described large N
2pipeline connects, and by described large N
2pipeline is connected in described boiler tube.
As the improvement of such scheme, described uviol lamp is located at described O
3on pipeline, and make described O
3the gas flow through in pipeline is subject to the irradiation of described uviol lamp.
As the improvement of such scheme, described uviol lamp is made up of 2-10 root ultraviolet lamp tube.
As the improvement of such scheme, described O
2pipeline and described O
2o is provided with between air inlet pipe
2valve; Described uviol lamp and described O
3o is provided with between pipeline
3valve; Described large N
2pipeline is positioned at described O
2pipeline and O
3pipeline outlet side and described large N
2line connection is provided with large N near airintake direction side
2valve; Described little N
2pipeline is near described N
2air inlet pipe place is provided with little N
2valve.
As the improvement of such scheme, described first screen printing apparatus is the printing equipment of phosphorus slurry, and the pattern of its printing is identical with the front electrode pattern of selectivity emission electrode solar cell.
As the improvement of such scheme, described second screen printing apparatus is the equipment for making electrodes of described selectivity emission electrode solar cell.
Implement the utility model, there is following beneficial effect:
The utility model increases O in diffusion furnace
3gas piping, is undertaken being oxidized the very thin silicon dioxide layer of formation one deck by the silicon chip surface of printing phosphorus slurry; Thin silicon dioxide can at high temperature reduce P(phosphorus on the one hand) diffusion velocity, form light dope in non-phosphorus slurry region; On the other hand due to the cushioning effect of silicon dioxide, the doped region P-N junction of formation is very even; The most important is, phosphorus slurry volatile matter is at high temperature intercepted outside silicon chip by silicon dioxide layer, can prevent volatile matter in thermal diffusion process from, on the impact of silicon chip, making silicon chip there will not be bad order, and battery efficiency also can be guaranteed.
Accompanying drawing explanation
Fig. 1 is the preparation system overall structure schematic diagram of a kind of selectivity emission electrode of the utility model solar cell;
Fig. 2 is the structural representation of the utility model thermal diffusion equipment.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model is described in further detail.
As depicted in figs. 1 and 2, the utility model embodiment provides a kind of preparation system of selectivity emission electrode solar cell, comprises etching device 1, first screen printing apparatus 2, thermal diffusion equipment 3, removes PSG and edge etching apparatus 4, antireflective film depositing device 5, second screen printing apparatus 6 and agglomerating plant 7; Described thermal diffusion equipment 3 comprises boiler tube 31, POCl
3device 32, large N
2pipeline 33, little N
2pipeline 34, O
2pipeline 35, O
3pipeline 36 and uviol lamp 37, described POCl
3device 32, large N
2pipeline 33, little N
2pipeline 34, O
2pipeline 35, O
3pipeline 36 is all connected with described boiler tube 31.
Wherein, described etching device 1 is existing for the equipment to silicon chip surface making herbs into wool;
Described thermal diffusion equipment 3 is for carrying out thermal diffusion to silicon chip;
The equipment that the described PSG of going (Phospho Silicate Glass phosphorosilicate glass) and edge etching apparatus 4 are existing phosphorosilicate glass for removing silicon chip surface and etch silicon chip edge;
Described antireflective film depositing device 5 is existing equipment silicon chip being carried out to front antireflective film depositing operation;
Described agglomerating plant 7 is the existing equipment carrying out sintering sizing for double finished product silicon chip;
Described POCl
3device 32 is existing by POCl
3solution and the N passed into
2the equipment of mixing.
It should be noted that, described O
2pipeline 35 and O
3common and the O of pipeline 36 inlet end
2air inlet pipe 38 connects, and outlet side is connected with described boiler tube 31; Described large N
2pipeline 33 and little N
2common and the N of pipeline 34 inlet end
2air inlet pipe 39 connects, and outlet side is connected with described boiler tube 31, can simplify the setting of pipeline, is also convenient to the management of source of the gas, reduces production cost simultaneously.
Preferably, described O
2pipeline 35 and O
3pipeline 36 outlet side and described large N
2pipeline 33 connects, and by described large N
2pipeline 33 is connected in described boiler tube 31.
Preferably, described uviol lamp 37 is located at described O
3on pipeline 36, and make described O
3the gas flow through in pipeline 36 is subject to the irradiation of described uviol lamp 37.Described uviol lamp 37 is by described O
3the O that pipeline 36 passes into
2gas is converted into O
3gas.
Preferably, described uviol lamp 37 is made up of 2-10 root ultraviolet lamp tube.
Preferably, described O
2pipeline 35 and described O
2o is provided with between air inlet pipe 38
2valve 351; Described uviol lamp 37 and described O
3o is provided with between pipeline 36
3valve 361; Described large N
2pipeline 33 is positioned at described O
2pipeline 35 and O
3pipeline 36 outlet side and described large N
2pipeline 33 junction is provided with large N near airintake direction side
2valve 331; Described little N
2pipeline 34 is near described N
2air inlet pipe 39 place is provided with little N
2valve 341.
It should be noted that, described O
2valve 351 is for controlling the O entering described boiler tube 31
2flow; Described O
3valve 361 is for controlling the O entering described boiler tube 31
3flow; Described large N
2valve 331 is mainly used in the N controlling to enter described boiler tube 31
2flow; Described little N
2valve 341 is mainly used in the POCl controlling to enter described boiler tube 31
3flow.
Preferably, the printing equipment that described first screen printing apparatus 2 is starched for phosphorus, the pattern of its printing is identical with the front electrode pattern of selectivity emission electrode solar cell.
Preferably, described second screen printing apparatus 6 is the equipment for making electrodes of described selectivity emission electrode solar cell, for the part that prints electrode on described silicon chip.
Above disclosedly be only a kind of preferred embodiment of the utility model, certainly can not limit the interest field of the utility model with this, therefore according to the equivalent variations that the utility model claim is done, still belong to the scope that the utility model is contained.
Claims (8)
1. the preparation system of a selectivity emission electrode solar cell, it is characterized in that, comprise etching device, the first screen printing apparatus, thermal diffusion equipment, remove PSG and edge etching apparatus, antireflective film depositing device, the second screen printing apparatus and agglomerating plant; Described thermal diffusion equipment comprises boiler tube, POCl
3device, large N
2pipeline, little N
2pipeline, O
2pipeline, O
3pipeline and uviol lamp, described POCl
3device, large N
2pipeline, little N
2pipeline, O
2pipeline, O
3pipeline is all connected with described boiler tube.
2. the preparation system of selectivity emission electrode solar cell as claimed in claim 1, is characterized in that, described O
2pipeline and O
3common and the O of pipeline inlet end
2air inlet pipe connects, and outlet side is connected with described boiler tube; Described large N
2pipeline and little N
2common and the N of pipeline inlet end
2air inlet pipe connects, and outlet side is connected with described boiler tube, described little N
2pipeline is provided with described POCl
3device.
3. the preparation system of selectivity emission electrode solar cell as claimed in claim 2, is characterized in that, described O
2pipeline and O
3pipeline outlet side and described large N
2pipeline connects, and by described large N
2pipeline is connected in described boiler tube.
4. the preparation system of selectivity emission electrode solar cell as claimed in claim 1, it is characterized in that, described uviol lamp is located at described O
3on pipeline, and make described O
3the gas flow through in pipeline is subject to the irradiation of described uviol lamp.
5. the preparation system of selectivity emission electrode solar cell as claimed in claim 4, it is characterized in that, described uviol lamp is made up of 2-10 root ultraviolet lamp tube.
6. the preparation system of selectivity emission electrode solar cell as claimed in claim 3, is characterized in that, described O
2pipeline and described O
2o is provided with between air inlet pipe
2valve; Described uviol lamp and described O
3o is provided with between pipeline
3valve; Described large N
2pipeline is positioned at described O
2pipeline and O
3pipeline outlet side and described large N
2line connection is provided with large N near airintake direction side
2valve; Described little N
2pipeline is near described N
2air inlet pipe place is provided with little N
2valve.
7. the preparation system of selectivity emission electrode solar cell as claimed in claim 1, it is characterized in that, described first screen printing apparatus is the printing equipment of phosphorus slurry, and the pattern of its printing is identical with the front electrode pattern of selectivity emission electrode solar cell.
8. the preparation system of selectivity emission electrode solar cell as claimed in claim 1, it is characterized in that, described second screen printing apparatus is the equipment for making electrodes of described selectivity emission electrode solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420637101.5U CN204391138U (en) | 2014-10-30 | 2014-10-30 | A kind of preparation system of selectivity emission electrode solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420637101.5U CN204391138U (en) | 2014-10-30 | 2014-10-30 | A kind of preparation system of selectivity emission electrode solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204391138U true CN204391138U (en) | 2015-06-10 |
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ID=53363833
Family Applications (1)
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|---|---|---|---|
| CN201420637101.5U Active CN204391138U (en) | 2014-10-30 | 2014-10-30 | A kind of preparation system of selectivity emission electrode solar cell |
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| Country | Link |
|---|---|
| CN (1) | CN204391138U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409562A (en) * | 2014-10-30 | 2015-03-11 | 广东爱康太阳能科技有限公司 | Preparation method and preparation system of selective emitter electrode solar cell |
-
2014
- 2014-10-30 CN CN201420637101.5U patent/CN204391138U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409562A (en) * | 2014-10-30 | 2015-03-11 | 广东爱康太阳能科技有限公司 | Preparation method and preparation system of selective emitter electrode solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180212 Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126 Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |