CN204375738U - 圆片级封装结构 - Google Patents
圆片级封装结构 Download PDFInfo
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- CN204375738U CN204375738U CN201420844356.9U CN201420844356U CN204375738U CN 204375738 U CN204375738 U CN 204375738U CN 201420844356 U CN201420844356 U CN 201420844356U CN 204375738 U CN204375738 U CN 204375738U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
本实用新型涉及一种圆片级封装结构,它包括引线框(1),所述引线框(1)上倒装有芯片(2),所述芯片(2)正面设置有金属凸点(3),所述金属凸点(3)与芯片(2)之间通过锡球(4)相连接,所述金属凸点(3)和锡球(4)周围设置有不导电胶(5),所述引线框(1)周围包封有塑封料(6),所述引线框(1)背面电镀有金属层(7)。本实用新型一种圆片级封装结构,圆片上的图面设计与引线框的图面完全对应,实现整片圆片倒装于引线框,再进行圆片的切割分离以及封装,实现单颗芯片尺寸等同于引线框单颗Unit的晶圆级封装。
Description
技术领域
本实用新型涉及一种圆片级封装结构,属于半导体封装技术领域。
背景技术
现有的圆片级封装,先对圆片进行划片,将完成划片后分离的芯片正面粘贴在载板上,再对载板粘贴芯片的一侧进行塑封,去除载板,露出芯片正面,对芯片正面电极进行Fanout 重布线制作金属线路与产品电性的输出。圆片划片后单颗芯片排列粘贴在载板上进行包封、制作Fanout金属线路,一方面芯片排列对位的效率低,而且分离芯片排列对位容易产生位移偏差,这将造成后续芯片正面Fanout金属线路的偏移;由于圆片Fanout封装在封装厂进行,但是对于封装厂进行Fanout工艺涉及的密间距线路制作,难度比较高,容易出现线路短路、线路剥离的问题,良率偏低。
发明内容
本实用新型的目的在于克服上述不足,提供一种圆片级封装结构,圆片上的图面设计与引线框的图面完全对应,实现整片圆片倒装于引线框,再进行圆片的切割分离以及封装,实现单颗芯片尺寸等同于引线框单颗Unit的晶圆级封装。
本实用新型的目的是这样实现的:一种圆片级封装结构,它包括引线框,所述引线框上倒装有芯片,所述芯片正面设置有金属凸点,所述金属凸点与芯片之间通过锡球相连接,所述金属凸点和锡球周围设置有不导电胶,所述引线框周围包封有塑封料,所述引线框背面电镀有金属层。
与现有技术相比,本实用新型具有以下有益效果:
1、芯片重布线制作与封装分别由各自擅长的晶圆FAB厂与封装厂完成,产品良率比较高;
2、引线框单颗Unit尺寸等同于单独的芯片尺寸,不仅最大化地利用了金属引线框,而且可以缩小产品尺寸,提高引线框的利用率,降低材料成本;
3、整片圆片一次倒装完成、大大提高了生产效率,降低了生产成本。
附图说明
图1为本实用新型一种圆片级封装结构的结构示意图。
图2~图11为本实用新型一种圆片级封装结构工艺方法的各工序示意图。
其中:
引线框1
芯片2
金属凸点3
锡球4
不导电胶5
塑封料6
金属层7。
具体实施方式
参见图1,本实用新型一种圆片级封装结构,它包括引线框1,所述引线框1上倒装有芯片2,所述芯片2正面设置有金属凸点3,所述金属凸点3与芯片2之间通过锡球4相连接,所述金属凸点3和锡球4周围设置有不导电胶5,所述引线框1周围包封有塑封料6,所述引线框1背面电镀有金属层7。
其工艺方法如下:
步骤一、参见图2,取一圆片,圆片正面线路设计完全对应于引线框图面,单颗芯片尺寸等同于封装尺寸;
步骤二、参见图3,在圆片正面电极上制作金属凸点;
步骤三、参见图4,在金属凸点上制作锡球;
步骤四、参见图5,在完成锡球制作的圆片正面被覆一层不导电胶,并进行不导电胶的固化,被覆方式可以采用刷胶、甩胶;
步骤五、参见图6,对圆片正面进行磨胶,露出金属柱子上的锡层;
步骤六、参见图7,将完成磨胶的圆片倒装于引线框;
步骤七、参见图8,将完成倒装的产品放入回流焊设备进行回流焊;
步骤八、参见图9,对完成回流焊的产品进行塑封;
步骤九、参见图10,对完成塑封后的产品进行引线框背面电镀;
步骤十、参见图11,对完成电镀的产品进行切割,分离单个产品。
所述圆片正面线路可以根据引线框图面进行Fanout设计;
所述引线框图面可以根据圆片正面线路进行匹配设计。
Claims (1)
1.一种圆片级封装结构,其特征在于:它包括引线框(1),所述引线框(1)上倒装有芯片(2),所述芯片(2)正面设置有金属凸点(3),所述金属凸点(3)与芯片(2)之间通过锡球(4)相连接,所述金属凸点(3)和锡球(4)周围设置有不导电胶(5),所述引线框(1)周围包封有塑封料(6),所述引线框(1)背面电镀有金属层(7)。
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CN104465585A (zh) * | 2014-12-26 | 2015-03-25 | 江苏长电科技股份有限公司 | 圆片级封装结构及其工艺方法 |
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CN104465585A (zh) * | 2014-12-26 | 2015-03-25 | 江苏长电科技股份有限公司 | 圆片级封装结构及其工艺方法 |
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