CN204348730U - New Polycrystalline silicon solar cell - Google Patents
New Polycrystalline silicon solar cell Download PDFInfo
- Publication number
- CN204348730U CN204348730U CN201520091123.0U CN201520091123U CN204348730U CN 204348730 U CN204348730 U CN 204348730U CN 201520091123 U CN201520091123 U CN 201520091123U CN 204348730 U CN204348730 U CN 204348730U
- Authority
- CN
- China
- Prior art keywords
- back electrode
- silicon chip
- main gate
- gate line
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model provides a kind of New Polycrystalline silicon solar cell, comprise silicon chip, the surface of silicon chip is provided with catadioptric film, main gate line and time grid line is printed on above catadioptric film, the back side of silicon chip is printed on back electrode, and described main gate line and time grid line are mutual vertical configuration, and described main gate line has three, the live width at described three main gate line two ends reduces, gradually in isosceles triangle.Described catadioptric film is made up of titanium deoxid film and silicon nitride film passivation layer, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines, it is few that the utility model has slurry consumption, photoelectric conversion efficiency high.
Description
Technical field
The utility model relates to a kind of solar battery sheet.
Background technology
Solar battery sheet is a kind of device due to photovoltaic effect, solar energy being converted into electric energy, is a kind of novel power supply, has permanent, spatter property and the large feature of flexibility three.But existing solar battery sheet exists, and conversion efficiency is low, the high deficiency of production cost.
Utility model content
The purpose of this utility model provides a kind of printing slurry consumption few for above-mentioned situation exactly, the much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency.The purpose of this utility model realizes by following scheme: a kind of New Polycrystalline silicon solar cell, comprise silicon chip, the surface of silicon chip is provided with catadioptric film, main gate line and time grid line is printed on above catadioptric film, the back side of silicon chip is printed on back electrode, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, and it is each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, the live width of every root time grid line is 40um, the distance at the edge of the two ends distance silicon chip of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces gradually, in isosceles triangle.Described catadioptric film is made up of titanium deoxid film and silicon nitride film passivation layer, described silicon nitride film passivation layer is between titanium deoxid film and silicon chip, described silicon nitride film passivation layer thickness is 42-45nm, refractive index is 2.02-2.12, described titanium deoxid film thickness is 42-45nm, and refractive index is 2.15-2.25, because titanium deoxid film mainly plays antireflective effect, reduce solar cell to the reflection of light, improve the photoelectric conversion efficiency of solar energy, silicon nitride film passivation layer mainly plays passivation, reduces the surface recombination of battery, improves battery performance, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines, described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately, this structure and back electrode can reduce the use of slurry, reduce manufacturing cost.It is few that the utility model has slurry consumption, photoelectric conversion efficiency high.
Accompanying drawing explanation
Fig. 1, the utility model structural representation.
Fig. 2, the utility model Facad structure schematic diagram.
Fig. 3, back electrode structure schematic diagram.
Fig. 4, every section of back electrode and frame line structure schematic diagram.
Embodiment
Contrast Fig. 1, Fig. 2, Fig. 3, Fig. 4 is known, a kind of New Polycrystalline silicon solar cell, comprise silicon chip 1, the surface of silicon chip is provided with catadioptric film 2, main gate line 3 and time grid line 4 is printed on above catadioptric film, the back side of silicon chip is printed on back electrode 5, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, and it is each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, the live width of every root time grid line is 40um, the distance at the edge of the two ends distance silicon chip of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces gradually, in isosceles triangle.Described catadioptric film is made up of titanium deoxid film and silicon nitride film passivation layer, described silicon nitride film passivation layer is between titanium deoxid film and silicon chip, described silicon nitride film passivation layer thickness is 42-45nm, refractive index is 2.02-2.12, described titanium deoxid film thickness is 42-45nm, refractive index is 2.15-2.25, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines 6, described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately.
Claims (1)
1. a New Polycrystalline silicon solar cell, comprise silicon chip (1), the surface of silicon chip is provided with catadioptric film (2), main gate line (3) and time grid line (4) is printed on above catadioptric film, the back side of silicon chip is printed on back electrode (5), described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, and it is each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, the live width of every root time grid line is 40um, the distance at the edge of the two ends distance silicon chip of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces gradually, in isosceles triangle, described catadioptric film is made up of titanium deoxid film and silicon nitride film passivation layer, described silicon nitride film passivation layer is between titanium deoxid film and silicon chip, described silicon nitride film passivation layer thickness is 42-45nm, refractive index is 2.02-2.12, described titanium deoxid film thickness is 42-45nm, refractive index is 2.15-2.25, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines (6), described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520091123.0U CN204348730U (en) | 2015-02-10 | 2015-02-10 | New Polycrystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520091123.0U CN204348730U (en) | 2015-02-10 | 2015-02-10 | New Polycrystalline silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204348730U true CN204348730U (en) | 2015-05-20 |
Family
ID=53231981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520091123.0U Expired - Fee Related CN204348730U (en) | 2015-02-10 | 2015-02-10 | New Polycrystalline silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204348730U (en) |
-
2015
- 2015-02-10 CN CN201520091123.0U patent/CN204348730U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207529945U (en) | The electrode structure of solar cell | |
| CN203423193U (en) | MWT solar cell | |
| CN203752663U (en) | Solar cell front electrode screen printing plate | |
| CN202934909U (en) | Sectional type back-electrode screen printing plate | |
| CN102544128B (en) | Solar cell | |
| CN204348730U (en) | New Polycrystalline silicon solar cell | |
| CN203250753U (en) | Solar battery sheet front-surface positive electrode | |
| CN203055923U (en) | Solar cell front face grid line and solar cell sheet printed with same | |
| CN204303822U (en) | A kind of crystal silicon solar cell sheet | |
| CN204348729U (en) | The much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency | |
| CN102420261A (en) | Solar cell | |
| CN204348731U (en) | The much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency | |
| CN204375764U (en) | Polysilicon solar battery slice | |
| CN204497242U (en) | A kind of electrode structure of N-type double-side solar cell | |
| CN202871806U (en) | Solar cell slice back electrode structure and solar cell slice possessing same | |
| CN103904144B (en) | Crystal silicon solar energy battery hollow type primary gate electrode | |
| CN204348727U (en) | A kind of New Polycrystalline silicon solar cell | |
| CN204348726U (en) | The polysilicon solar battery slice that a kind of usage of sizing agent is few | |
| CN104319297A (en) | Solar battery piece | |
| CN204348732U (en) | A kind of polysilicon solar battery slice | |
| CN204144275U (en) | A kind of solar battery sheet | |
| CN204375765U (en) | Modified model polysilicon solar battery slice | |
| CN204348733U (en) | A kind of modified model polysilicon solar battery slice | |
| CN203013743U (en) | Crystalline silica solar right side main grid electrode | |
| CN203312346U (en) | Solar cell module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 335200 Longgang Industrial Park, Yujiang, Jiangxi, Yingtan Patentee after: China Jiangxi new energy Limited by Share Ltd Address before: 335200 Longgang Industrial Park, Yujiang, Jiangxi, Yingtan Patentee before: JIANGXI JTNE NEW ENERGY CO., LTD. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150520 Termination date: 20190210 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |