CN204348732U - A kind of polysilicon solar battery slice - Google Patents

A kind of polysilicon solar battery slice Download PDF

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Publication number
CN204348732U
CN204348732U CN201520091149.5U CN201520091149U CN204348732U CN 204348732 U CN204348732 U CN 204348732U CN 201520091149 U CN201520091149 U CN 201520091149U CN 204348732 U CN204348732 U CN 204348732U
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CN
China
Prior art keywords
main gate
film
gate line
silver
silicon chip
Prior art date
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Expired - Fee Related
Application number
CN201520091149.5U
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Chinese (zh)
Inventor
叶挺宁
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China Jiangxi new energy Limited by Share Ltd
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JIANGXI JTNE NEW ENERGY Co Ltd
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Filing date
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Priority to CN201520091149.5U priority Critical patent/CN204348732U/en
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Publication of CN204348732U publication Critical patent/CN204348732U/en
Expired - Fee Related legal-status Critical Current
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The utility model provides a kind of polysilicon solar battery slice, comprise silicon chip, the front of silicon chip is coated with catadioptric film, main gate line and time grid line is printed on above catadioptric film, the back side of silicon chip is printed on back electrode, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the live width that described main gate line is three main gate line described in mutual vertical configuration with time grid line is 1.4mm, the live width of every root time grid line is 40um, the live width at described three main gate line two ends reduces gradually, in isosceles triangle, described back electrode is a kind ofly be uniformly distributed by some silver-colored pearls the silver band forming preseting length and width, described silver-colored pearl is cylindrical, the utility model has low cost of manufacture, conversion efficiency high.

Description

A kind of polysilicon solar battery slice
Technical field
The utility model relates to a kind of polysilicon solar battery slice of the sun.
Background technology
Solar battery sheet is a kind of device due to photovoltaic effect, solar energy being converted into electric energy, is a kind of novel power supply, has permanent, spatter property and the large feature of flexibility three.But existing solar battery sheet exists, and conversion efficiency is low, the high deficiency of production cost.
Utility model content
The purpose of this utility model is exactly provide for above-mentioned situation the polysilicon solar battery slice that a kind of conversion efficiency is high, production cost is low.The purpose of this utility model realizes by following scheme: a kind of polysilicon solar battery slice, comprise silicon chip, the front of silicon chip is coated with catadioptric film, main gate line and time grid line is printed on above catadioptric film, the back side of silicon chip is printed on back electrode, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, the thickness of described silicon oxynitride film is 36-40nm, the composite bed formed due to hollow silica ball film and silicon oxynitride film has better optical match characteristic compared with monofilm, not only have the light of the 520nm that the principal spectrum of silicon responds and excellent subtract refraction effect, and have good refraction effect to the light of wavelength within the scope of 300-1200nm, thus improve the conversion efficiency of polysilicon solar cell, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, and other two split the main gate line both sides on described line of symmetry, and each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, and the live width of every root time grid line is 40um, and the edge of the two ends distance silicon chip of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces, gradually in isosceles triangle.The design of this main gate line and time grid line, namely printing slurry can be saved, reduce production cost, also shading-area can be reduced, promote conversion efficiency, described back electrode is a kind ofly be uniformly distributed by some silver-colored pearls the silver band forming preseting length and width, described silver-colored pearl is cylindrical, the spacing set is kept between adjacent silver pearl, described back electrode length is 12.5mm, width is 2.8mm, and the silver-colored pearl diameter forming back electrode is 0.25mm, and the spacing of horizontal and vertical two any adjacent silver-colored pearls is 0.35mm.Adopt the structure that cylindrical silver-colored pearl is densely arranged, both the contact of back electrode and back surface field had been considered, decrease again the area of back electrode to a certain extent, decrease the consumption of silver slurry, relatively increase the area of aluminium back surface field, thus decrease electric current compound, increase open circuit voltage and short circuit current, finally to reach the object of the efficiency improving cell piece.The utility model has low cost of manufacture, conversion efficiency high.
Accompanying drawing explanation
Fig. 1, the utility model structural representation.
Fig. 2, the utility model Facad structure schematic diagram.
Fig. 3, back electrode structure schematic diagram.
Embodiment
Contrast Fig. 1, Fig. 2, Fig. 3 is known, a kind of polysilicon solar battery slice, comprise silicon chip 1, the front of silicon chip is coated with catadioptric film 2, main gate line 3 and time grid line 4 is printed on above catadioptric film, the back side of silicon chip is printed on back electrode 5, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, the thickness of described silicon oxynitride film is 36-40nm, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, and it is each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, the live width of every root time grid line is 40um, the edge of the two ends distance silicon chip of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces gradually, in isosceles triangle, described back electrode is a kind ofly be uniformly distributed by some silver-colored pearls 6 the silver band forming preseting length and width, described silver-colored pearl is cylindrical, the spacing set is kept between adjacent silver pearl, described back electrode length is 12.5mm, width is 2.8mm, the silver-colored pearl diameter forming back electrode is 0.25mm, the spacing of horizontal and vertical two any adjacent silver-colored pearls is 0.35mm.

Claims (1)

1. a polysilicon solar battery slice, comprise silicon chip (1), the front of silicon chip is coated with catadioptric film (2), main gate line (3) and time grid line (4) is printed on above catadioptric film, the back side of silicon chip is printed on back electrode (5), it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, the thickness of described silicon oxynitride film is 36-40nm, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, and it is each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, the live width of every root time grid line is 40um, the edge of the two ends distance silicon chip of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces gradually, in isosceles triangle, described back electrode is that one is uniformly distributed by some silver-colored pearls (6) the silver band forming preseting length and width, described silver-colored pearl is cylindrical, the spacing set is kept between adjacent silver pearl, described back electrode length is 12.5mm, width is 2.8mm, the silver-colored pearl diameter forming back electrode is 0.25mm, the spacing of horizontal and vertical two any adjacent silver-colored pearls is 0.35mm.
CN201520091149.5U 2015-02-10 2015-02-10 A kind of polysilicon solar battery slice Expired - Fee Related CN204348732U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520091149.5U CN204348732U (en) 2015-02-10 2015-02-10 A kind of polysilicon solar battery slice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520091149.5U CN204348732U (en) 2015-02-10 2015-02-10 A kind of polysilicon solar battery slice

Publications (1)

Publication Number Publication Date
CN204348732U true CN204348732U (en) 2015-05-20

Family

ID=53231983

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520091149.5U Expired - Fee Related CN204348732U (en) 2015-02-10 2015-02-10 A kind of polysilicon solar battery slice

Country Status (1)

Country Link
CN (1) CN204348732U (en)

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: 335200 Longgang Industrial Park, Yujiang, Jiangxi, Yingtan

Patentee after: China Jiangxi new energy Limited by Share Ltd

Address before: 335200 Longgang Industrial Park, Yujiang, Jiangxi, Yingtan

Patentee before: JIANGXI JTNE NEW ENERGY CO., LTD.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150520

Termination date: 20190210