CN204348731U - The much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency - Google Patents
The much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency Download PDFInfo
- Publication number
- CN204348731U CN204348731U CN201520091147.6U CN201520091147U CN204348731U CN 204348731 U CN204348731 U CN 204348731U CN 201520091147 U CN201520091147 U CN 201520091147U CN 204348731 U CN204348731 U CN 204348731U
- Authority
- CN
- China
- Prior art keywords
- back electrode
- silicon chip
- line
- main gate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model provides a kind of photoelectric conversion efficiency much higher crystal silicon solar batteries sheet, comprise silicon chip, the surface of silicon chip is provided with catadioptric film, main gate line and time grid line is printed on above catadioptric film, the back side of silicon chip is printed on back electrode, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines, the utility model has low cost of manufacture, conversion efficiency high.
Description
Technical field
The utility model relates to a kind of polysilicon solar battery slice of the sun.
Background technology
Solar battery sheet is a kind of device due to photovoltaic effect, solar energy being converted into electric energy, is a kind of novel power supply, has permanent, spatter property and the large feature of flexibility three.But existing solar battery sheet exists, and conversion efficiency is low, the high deficiency of production cost.
Utility model content
The purpose of this utility model is exactly provide for above-mentioned situation the polysilicon solar battery slice that a kind of conversion efficiency is high, production cost is low.The purpose of this utility model realizes by following scheme: the much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency, comprise silicon chip, the surface of silicon chip is provided with catadioptric film, main gate line and time grid line is printed on above catadioptric film, the back side of silicon chip is printed on back electrode, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, the thickness of described silicon oxynitride film is 36-40nm, the catadioptric film of this structure effectively can improve photoelectric conversion efficiency, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, and it is each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, the live width of every root time grid line is 40um, the two ends distance silicon chip edge of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces gradually, in isosceles triangle, the structural design of this main gate line and time grid line, namely printing slurry can be saved, reduce production cost, also shading-area can be reduced, promote conversion efficiency, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines, described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately, this back electrode can reduce the use of printing slurry, reduce production cost.The utility model has low cost of manufacture, conversion efficiency high.
Accompanying drawing explanation
Fig. 1, the utility model structural representation.
Fig. 2, the utility model Facad structure schematic diagram.
Fig. 3, back electrode structure schematic diagram.
Fig. 4, every section of back electrode and peripheral frame line structure schematic diagram thereof.
Embodiment
Contrast Fig. 1, Fig. 2, Fig. 3, Fig. 4 is known, the much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency, comprise silicon chip 1, the surface of silicon chip is provided with catadioptric film 2, main gate line 3 and time grid line 4 is printed on above catadioptric film, the back side of silicon chip is printed on back electrode 5, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, the thickness of described silicon oxynitride film is 36-40nm, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, and it is each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, the live width of every root time grid line is 40um, the two ends distance silicon chip edge of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces gradually, in isosceles triangle, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines 6, described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately.
Claims (1)
1. the much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency, comprise silicon chip (1), the surface of silicon chip is provided with catadioptric film (2), main gate line (3) and time grid line (4) is printed on above catadioptric film, the back side of silicon chip is printed on back electrode (5), it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, the thickness of described silicon oxynitride film is 36-40nm, described main gate line and time grid line are mutual vertical configuration, described main gate line has three, wherein one is arranged on the line of symmetry of described silicon chip, other two split the main gate line both sides on described line of symmetry, and it is each at a distance of 52mm, described grid line is for equidistantly distributing, the live width of described three main gate line is 1.4mm, the live width of every root time grid line is 40um, the two ends distance silicon chip edge of every root time grid line is 1.5mm, the live width at described three main gate line two ends reduces gradually, in isosceles triangle, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines (6), described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520091147.6U CN204348731U (en) | 2015-02-10 | 2015-02-10 | The much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520091147.6U CN204348731U (en) | 2015-02-10 | 2015-02-10 | The much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204348731U true CN204348731U (en) | 2015-05-20 |
Family
ID=53231982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201520091147.6U Expired - Fee Related CN204348731U (en) | 2015-02-10 | 2015-02-10 | The much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN204348731U (en) |
-
2015
- 2015-02-10 CN CN201520091147.6U patent/CN204348731U/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IN2015DN04222A (en) | ||
CN203941915U (en) | A kind of radial solar energy electrode grid line structure | |
CN204348729U (en) | The much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency | |
CN202934909U (en) | Sectional type back-electrode screen printing plate | |
CN102544128B (en) | Solar cell | |
CN204348731U (en) | The much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency | |
CN204315584U (en) | A kind of solar battery sheet of novel electrode structure | |
CN204303822U (en) | A kind of crystal silicon solar cell sheet | |
CN203250753U (en) | Solar battery sheet front-surface positive electrode | |
CN202977431U (en) | Polycrystalline silicon solar cell | |
CN204348730U (en) | New Polycrystalline silicon solar cell | |
CN204375765U (en) | Modified model polysilicon solar battery slice | |
CN202871806U (en) | Solar cell slice back electrode structure and solar cell slice possessing same | |
CN204614791U (en) | A kind of high euphotic solar energy battery | |
CN204167328U (en) | A kind of solar battery front side grid structure with secondary main gate line | |
CN204029832U (en) | A kind of structure of solar photovoltaic assembly | |
CN204348732U (en) | A kind of polysilicon solar battery slice | |
CN204348727U (en) | A kind of New Polycrystalline silicon solar cell | |
CN204348726U (en) | The polysilicon solar battery slice that a kind of usage of sizing agent is few | |
CN204375764U (en) | Polysilicon solar battery slice | |
CN204348733U (en) | A kind of modified model polysilicon solar battery slice | |
CN203423195U (en) | Sectional type tentacle back electrode | |
CN203288604U (en) | Positive electrode of crystalline silicon solar cell | |
CN204290865U (en) | A kind of flexible solar panel device | |
CN202957257U (en) | Solar cell and backside electrode structure thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 335200 Longgang Industrial Park, Yujiang, Jiangxi, Yingtan Patentee after: China Jiangxi new energy Limited by Share Ltd Address before: 335200 Longgang Industrial Park, Yujiang, Jiangxi, Yingtan Patentee before: JIANGXI JTNE NEW ENERGY CO., LTD. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150520 Termination date: 20190210 |
|
CF01 | Termination of patent right due to non-payment of annual fee |