CN204335131U - A kind of coldplate for DC arc electric discharge high-density plasma generating means - Google Patents
A kind of coldplate for DC arc electric discharge high-density plasma generating means Download PDFInfo
- Publication number
- CN204335131U CN204335131U CN201420180803.5U CN201420180803U CN204335131U CN 204335131 U CN204335131 U CN 204335131U CN 201420180803 U CN201420180803 U CN 201420180803U CN 204335131 U CN204335131 U CN 204335131U
- Authority
- CN
- China
- Prior art keywords
- coldplate
- generating means
- copper coin
- electric discharge
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 239000011733 molybdenum Substances 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 8
- 239000010408 film Substances 0.000 abstract description 4
- 239000000498 cooling water Substances 0.000 abstract description 3
- 238000000427 thin-film deposition Methods 0.000 abstract description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
The utility model discloses a kind of coldplate for DC arc electric discharge high-density plasma generating means, this coldplate is embedded in copper coin by a molybdenum post and forms, the central area of molybdenum post is processed with plasma channel hole, copper coin external cylindrical surface is processed with annular groove, plasma channel hole is distributed on coldplate central axis, and cooling water pipe is provided with a water inlet and a delivery port.The utility model can not only free stack combinations, and effectively can increase film deposition area, improves thin film deposition efficiency, also can effectively reduce ionogenic bulk.
Description
Technical field
The utility model relates to a kind of coldplate for DC arc electric discharge high-density plasma generating means.
Background technology
Plasma enhanced chemical vapor deposition (PECVD) is the key equipment preparing crystal silicon and thin-film solar cells.PECVD technology can be divided into directly and Indirection techniques by the relation of plasma source and sample.Multistage direct current arc discharge plasma PECVD technology is that indirect PECVD technology is a kind of, and the differing pressure in this precipitation equipment between plasma source and deposition chambers is very large, and reach sub-atmospheric pressure, in this plasma source, the ionization level of argon gas can reach 10%, NH
3resolution ratio can reach 100%.The plasma jet of such anode nozzle ejection has a large amount of active ion when expanding to deposition chambers or neutral atom exists, and the deposition chambers of low pressure effectively can avoid the compound between different activities particle.Owing to achieving being separated of sample and plasma source, can reduce plasma intermediate ion to the sputtering of film and damage, realize deposition at a high speed, the radio frequency plasma body source deposition rate reaching 20nm/s(common is 30nm/min).Current multistage direct current arc discharge plasma generating device Problems existing is: because coldplate welding procedure can not ensure, easily cause cooling water leakage phenomenon, causes the frequent maintenance shut-downs of equipment.
Summary of the invention
The purpose of this utility model is to provide a kind of coldplate for DC arc electric discharge high-density plasma generating means, and this coldplate can increase film deposition area, improve thin film deposition efficiency.
For achieving the above object, the solution that the utility model adopts is: which is provided with annular cooling conduit, described coldplate is embedded in copper coin by a molybdenum post and forms, and the central area of molybdenum post is processed with plasma channel hole, external cylindrical surface is processed with annular groove, for placing annular cooling conduit; Plasma channel hole is passed through along copper coin center, and annular cooling conduit is provided with a water inlet and a delivery port.
The utility model has following effect:
(1) coldplate can multiple stack combinations use, and forms different arc voltages, therefore can not only increase film deposition area, improve thin film deposition efficiency, and can effectively reduce ionogenic bulk, make total more compact;
(2) because plasma channel adopts the molybdenum with good resistance to elevated temperatures to process, therefore can useful life of effective extending channel;
(3) owing to adopting integral type copper pipe to the coated cooling of copper coin, both plasma passage effectively cooled, and can effectively prevent coolant from leaking again; Reduce difficulty of processing simultaneously, more easily realize.
Accompanying drawing explanation
Fig. 1 is longitudinal section of the present utility model.
Fig. 2 is front view of the present utility model.
In figure: 101-annular groove, 201-plasma channel hole, 3-annular cooling conduit, 301-delivery port, 302-water inlet.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is described in further detail.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
As shown in Figure 1 and Figure 2, the utility model is embedded in copper coin by a molybdenum post and forms, and the central area of each molybdenum post is processed with plasma channel hole 201, and copper coin is provided with an annular cooling conduit 3, and its one end is water inlet 302 and delivery port 301.During work, cooling water is entered by water inlet 302, then to detour a circle along the annular groove 101 on copper coin through annular cooling conduit, cools, flow out finally by delivery port 301 copper coin.
Claims (1)
1. the coldplate for DC arc electric discharge high-density plasma generating means, which is provided with annular cooling conduit (3), it is characterized in that: described coldplate is embedded in copper coin by a molybdenum post and forms, the central area of molybdenum post is processed with plasma channel hole (201), external cylindrical surface is processed with annular groove (101), for placing annular cooling conduit (3); Plasma channel hole (201) is passed through along copper coin center, and annular cooling conduit (3) is provided with a water inlet (302) and a delivery port (301).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420180803.5U CN204335131U (en) | 2014-04-15 | 2014-04-15 | A kind of coldplate for DC arc electric discharge high-density plasma generating means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420180803.5U CN204335131U (en) | 2014-04-15 | 2014-04-15 | A kind of coldplate for DC arc electric discharge high-density plasma generating means |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204335131U true CN204335131U (en) | 2015-05-13 |
Family
ID=53171435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420180803.5U Expired - Fee Related CN204335131U (en) | 2014-04-15 | 2014-04-15 | A kind of coldplate for DC arc electric discharge high-density plasma generating means |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204335131U (en) |
-
2014
- 2014-04-15 CN CN201420180803.5U patent/CN204335131U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CHENGDU DAXINCHENG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: GOU FUJUN Effective date: 20150514 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 550000 GUIYANG, GUIZHOU PROVINCE TO: 610200 CHENGDU, SICHUAN PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150514 Address after: 610200 Sichuan Province, Chengdu City Industrial Shuangliu southwest Port Economic Development Zone District (West Airport incubator) Patentee after: CHENGDU DAXINCHENG TECHNOLOGY Co.,Ltd. Address before: 550000, Huaxi District, Guizhou City, Guiyang Province, Guizhou University North District staff dormitory Patentee before: Zhifujun |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150513 |