CN204332984U - Solar photovoltaic assembly - Google Patents
Solar photovoltaic assembly Download PDFInfo
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- CN204332984U CN204332984U CN201520023255.XU CN201520023255U CN204332984U CN 204332984 U CN204332984 U CN 204332984U CN 201520023255 U CN201520023255 U CN 201520023255U CN 204332984 U CN204332984 U CN 204332984U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
A kind of solar photovoltaic assembly, comprise the backboard, the first encapsulated layer, solar battery sheet, the second encapsulated layer, glass substrate and the silicon dioxide layer that stack gradually, solar battery sheet comprises the cell back field, silicon chip, diffusion layer, silicon nitride layer and the passivation layer that stack gradually, cell back field is arranged on the first encapsulated layer, and the second encapsulated layer is arranged on passivation layer.Above-mentioned solar photovoltaic assembly has higher conversion efficiency and good anti-PID performance.
Description
Technical field
The utility model relates to field of solar energy, particularly relates to a kind of solar photovoltaic assembly.
Background technology
Earth-shaking change has been there is at photovoltaic generation in recent years, every technology all has greatly improved, promote the newly-built on a large scale of domestic electric power station system, but the transformation efficiency of existing solar cell photovoltaic module is still lower, limit its development to a certain extent, and PID effect (potential inducing attenuation effect) causes component power to decay, make the matter worse especially.
Utility model content
Given this, be necessary to provide a kind of transformation efficiency higher and the solar photovoltaic assembly of anti-PID better performances.
A kind of solar photovoltaic assembly, comprise the backboard, the first encapsulated layer, solar battery sheet, the second encapsulated layer, glass substrate and the silicon dioxide layer that stack gradually, described solar battery sheet comprises the cell back field, silicon chip, diffusion layer, silicon nitride layer and the passivation layer that stack gradually, described cell back field is arranged on described first encapsulated layer, and described second encapsulated layer is arranged on described passivation layer.
Wherein in an embodiment, the thickness of described silicon dioxide layer is 90 ~ 110 nanometers.
Wherein in an embodiment, described first encapsulated layer is the copolymer layer of ethene and vinylacetate; The thickness of described first encapsulated layer is 0.35 ~ 0.55 millimeter.
Wherein in an embodiment, described second encapsulated layer is the copolymer layer of ethene and vinylacetate; The thickness of described second encapsulated layer is 0.35 ~ 0.55 millimeter.
Wherein in an embodiment, described solar battery sheet is multiple, and multiple described solar battery sheet series connection.
Wherein in an embodiment, described backboard is polyvinyl fluoride plate; Described cell back field is aluminium sheet.
Wherein in an embodiment, the thickness of described silicon chip is 180 ~ 200 microns.
Wherein in an embodiment, described diffusion layer is for expanding phosphorous layer; The thickness of described diffusion layer is 0.3 ~ 0.5 micron.
Wherein in an embodiment, the thickness of described silicon nitride layer is 75 ~ 80 nanometers.
Wherein in an embodiment, described passivation layer is silicon dioxide layer; The thickness of described passivation layer is 4 ~ 5 nanometers.
Above-mentioned solar photovoltaic assembly is by being arranged to said structure, and passivation layer is set on silicon nitride layer, the sodium ion that can not only intercept in glass substrate moves to silicon chip, thus obtain excellent anti-PID performance, and silicon nitride layer is arranged passivation layer there is good passivation effect, solar battery sheet short wave response performance can be promoted, finally realize short-wave band and more effectively utilize, thus improve conversion efficiency; And the glass substrate of silicon dioxide layer is provided with by coupling, the short-wave band incident light through glass substrate can be made to pass through smoothly, and then absorbed by solar battery sheet, thus provide conversion efficiency further, namely above-mentioned solar photovoltaic assembly has higher conversion efficiency and good anti-PID performance.
Accompanying drawing explanation
Fig. 1 is the structural representation of the solar photovoltaic assembly of an execution mode;
Fig. 2 is the structural representation of the solar battery sheet of the solar photovoltaic assembly shown in Fig. 1.
Embodiment
For the ease of understanding the utility model, below with reference to relevant drawings, the utility model is described more fully.Preferred embodiment of the present utility model is given in accompanying drawing.But the utility model can realize in many different forms, is not limited to embodiment described herein.On the contrary, provide the object of these embodiments be make the understanding of disclosure of the present utility model more comprehensively thorough.
It should be noted that, when element is called as " being fixed on " another element, directly can there is element placed in the middle in it on another element or also.When an element is considered to " connection " another element, it can be directly connected to another element or may there is centering elements simultaneously.Term as used herein " vertical ", " level ", "left", "right" and similar statement are just for illustrative purposes.
Unless otherwise defined, all technology used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present utility model understand usually.The object of the term used in specification of the present utility model herein just in order to describe specific embodiment, is not intended to be restriction the utility model.
As shown in Figure 1, the solar photovoltaic assembly 10 of an execution mode, comprise stack gradually comprise backboard 100, first encapsulated layer 200, solar battery sheet 300, second encapsulated layer 400, glass substrate 500 and the silicon dioxide layer 600 that stack gradually.
The thickness of backboard 100 is 0.35 ~ 0.55 millimeter.Backboard 100 is polyvinyl fluoride (TPT) plate.
First encapsulated layer 200 is copolymer (EVA) layer of ethene and vinylacetate.The thickness of the first encapsulated layer 200 is 0.35 ~ 0.55 millimeter.
Further, containing benzophenone ultraviolet absorbent in the first encapsulated layer 200, thus short-wave band illumination can be ended penetrate backboard 100, ensure the weatherability of backboard 100.And backboard 100 has higher reflectivity with the contact-making surface of above-mentioned first encapsulated layer 200, sunlight reflection can be entered in whole solar photovoltaic assembly 10, thus make the unemployed light between the space of solar battery sheet 300 realize secondary utilization.
Solar battery sheet 300 can be one, also can be multiple.When solar battery sheet 300 is multiple, multiple solar battery sheet 300 is cascaded by conduction welding.
See also Fig. 2, wherein, solar battery sheet 300 comprises the cell back field 310, silicon chip 320, diffusion layer 330, silicon nitride layer 340 and the passivation layer 350 that stack gradually.
Cell back field 310 is arranged on the first encapsulated layer 200.Cell back field 310 is provided with positive electrode 360, the first encapsulated layer 200 is arranged at the side that cell back field 310 has positive electrode 360.Cell back field 310 is aluminium sheet.The thickness of cell back field 310 is 20 microns ~ 30 microns.
Silicon chip 320 is laminated in the side of cell back field 310 away from positive electrode 360.Silicon chip 320 is P-type silicon sheet 320.The thickness of silicon chip 320 is 180 microns ~ 200 microns.
Diffusion layer 330 is for expanding phosphorous layer, and namely N-type expands phosphorous layer.The thickness of diffusion layer 330 is 0.3 micron ~ 0.5 micron.Wherein, before silicon chip 320 is formed diffusion layer 330, first by silicon chip 320 cleaning and texturing, then carry out diffusion, form diffusion layer 330.
The thickness of silicon nitride layer 340 is 75 ~ 80 nanometers.Wherein, silicon nitride layer 340 prepares by PECVD (plasma enhanced chemical vapor deposition method) coating process.
The thickness of passivation layer 350 is 4 ~ 5 nanometers.Passivation layer 350 is silicon dioxide layer, and silicon dioxide layer is made passivation layer 350 and more effectively can be realized the sodium ion intercepted in glass and move to silicon chip 320, and has good passivation effect, can promote the short wave response performance of solar battery sheet 300.Passivation layer 350 prepares by PECVD (plasma enhanced chemical vapor deposition method) coating process.
Wherein, passivation layer 350 is provided with negative electrode 370 away from the side of silicon nitride layer 340.
Second encapsulated layer 400 is the copolymer layer of ethene and vinylacetate.Second encapsulated layer 400 is arranged on passivation layer 350.Concrete, the second encapsulated layer 400 is arranged at the side that passivation layer 350 has negative electrode 370.The thickness of the second encapsulated layer 400 is 0.35 ~ 0.55 millimeter.
Further, benzophenone type ultraviolet absorbent is not added in the second encapsulated layer 400.And this second encapsulated layer 400 can make to pass through smoothly through the short-wave band incident light of glass substrate 500, and then absorbed by solar cell.
Further, can by the content of the vinylacetate in reduction by second encapsulated layer 400, improve the purity of the material of the second encapsulated layer 400, add EDTA (ethylenediamine tetra-acetic acid), utilize its chelate structure, the metal ions such as the sodium in complexing glass, potassium, or add the resistance that modes such as absorbing ion improves the second encapsulated layer 400, thus sodium in obstruct glass, potassium ion move to the solar battery sheet 300 of solar photovoltaic assembly 10, thus increase the anti-PID performance of solar photovoltaic assembly 10.
The thickness of glass substrate 500 is 3.2 millimeters.
Silicon dioxide layer 600 has anti-reflection effect, to increase the transmitance of short-wave band.The thickness of silicon dioxide layer 600 is 90 ~ 110 nanometers, and the silicon dioxide layer 600 of this thickness is arranged on glass substrate 500, can have higher transmitance, namely have higher transmitance at 300nm ~ 400nm wave band at short-wave band.Wherein, silicon dioxide layer 600 is formed on glass substrate 500 by the method for roller coating.
Above-mentioned solar photovoltaic assembly 10 is by being arranged to said structure, and passivation layer 350 is set on silicon nitride layer 340, the sodium ion that can not only intercept in glass substrate 500 moves to silicon chip 320, thus obtain excellent anti-PID performance, and silicon nitride layer 340 is arranged passivation layer 350 there is good passivation effect, solar battery sheet 300 short wave response performance can be promoted, finally realize short-wave band and more effectively utilize, thus improve conversion efficiency; And the glass substrate 500 of silicon dioxide layer 600 is provided with by coupling, the short-wave band incident light through glass substrate 500 can be made to pass through smoothly, and then absorbed by solar battery sheet 300, thus provide conversion efficiency further, namely above-mentioned solar photovoltaic assembly 10 has higher conversion efficiency and good anti-PID performance.
The above embodiment only have expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (10)
1. a solar photovoltaic assembly, it is characterized in that, comprise the backboard, the first encapsulated layer, solar battery sheet, the second encapsulated layer, glass substrate and the silicon dioxide layer that stack gradually, described solar battery sheet comprises the cell back field, silicon chip, diffusion layer, silicon nitride layer and the passivation layer that stack gradually, described cell back field is arranged on described first encapsulated layer, and described second encapsulated layer is arranged on described passivation layer.
2. solar photovoltaic assembly according to claim 1, is characterized in that, the thickness of described silicon dioxide layer is 90 ~ 110 nanometers.
3. solar photovoltaic assembly according to claim 1, is characterized in that, described first encapsulated layer is the copolymer layer of ethene and vinylacetate; The thickness of described first encapsulated layer is 0.35 ~ 0.55 millimeter.
4. solar photovoltaic assembly according to claim 1, is characterized in that, described second encapsulated layer is the copolymer layer of ethene and vinylacetate; The thickness of described second encapsulated layer is 0.35 ~ 0.55 millimeter.
5. solar photovoltaic assembly according to claim 1, is characterized in that, described solar battery sheet is multiple, and multiple described solar battery sheet series connection.
6. solar photovoltaic assembly according to claim 1, is characterized in that, described backboard is polyvinyl fluoride plate; Described cell back field is aluminium back surface field.
7. solar photovoltaic assembly according to claim 1, is characterized in that, the thickness of described silicon chip is 180 ~ 200 microns.
8. solar photovoltaic assembly according to claim 1, is characterized in that, described diffusion layer is for expanding phosphorous layer; The thickness of described diffusion layer is 0.3 ~ 0.5 micron.
9. solar photovoltaic assembly according to claim 1, is characterized in that, the thickness of described silicon nitride layer is 75 ~ 80 nanometers.
10. solar photovoltaic assembly according to claim 1, is characterized in that, described passivation layer is silicon dioxide layer; The thickness of described passivation layer is 4 ~ 5 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520023255.XU CN204332984U (en) | 2015-01-13 | 2015-01-13 | Solar photovoltaic assembly |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520023255.XU CN204332984U (en) | 2015-01-13 | 2015-01-13 | Solar photovoltaic assembly |
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| CN204332984U true CN204332984U (en) | 2015-05-13 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470336A (en) * | 2015-12-31 | 2016-04-06 | 江苏宇兆能源科技有限公司 | Novel solar photovoltaic module resistant to proportion integration differentiation (PID) effect |
| CN106711256A (en) * | 2015-07-27 | 2017-05-24 | 东莞南玻光伏科技有限公司 | Double-glass solar photovoltaic module and preparation method thereof |
-
2015
- 2015-01-13 CN CN201520023255.XU patent/CN204332984U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106711256A (en) * | 2015-07-27 | 2017-05-24 | 东莞南玻光伏科技有限公司 | Double-glass solar photovoltaic module and preparation method thereof |
| CN105470336A (en) * | 2015-12-31 | 2016-04-06 | 江苏宇兆能源科技有限公司 | Novel solar photovoltaic module resistant to proportion integration differentiation (PID) effect |
| CN105470336B (en) * | 2015-12-31 | 2017-06-09 | 江苏宇兆能源科技有限公司 | A kind of solar energy photovoltaic component of anti-PID effects |
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| CF01 | Termination of patent right due to non-payment of annual fee |