CN204204883U - A kind of polysilicon solar cell group - Google Patents
A kind of polysilicon solar cell group Download PDFInfo
- Publication number
- CN204204883U CN204204883U CN201420569554.9U CN201420569554U CN204204883U CN 204204883 U CN204204883 U CN 204204883U CN 201420569554 U CN201420569554 U CN 201420569554U CN 204204883 U CN204204883 U CN 204204883U
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- CN
- China
- Prior art keywords
- silicon nitride
- reflecting film
- nitride anti
- solar cell
- solar energy
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of polysilicon solar cell group, it is characterized in that: comprise solar energy polycrystal cell piece, and the top of solar energy polycrystal cell piece is provided with some layers of silicon nitride anti-reflecting film, and silicon nitride anti-reflecting film all adopts alveolate texture; The upper surface of the silicon nitride anti-reflecting film of the described the superiors is disposed with EVA adhesive film layer and toughened glass layer from bottom to top; The lower surface of described solar energy polycrystal cell piece is provided with backboard.The utility model can reduce blu-ray reflection to greatest extent, improves solar cell surface passivation effect, reduces solar cell surface reflectivity, and the optical loss that can not cause because refractive index is not mated after encapsulation.
Description
Technical field
The utility model belongs to solar cell lens field, particularly relates to a kind of polysilicon solar cell group.
Background technology
In solar battery process, the technique of surperficial antireflective film is a very important step, and it directly determines solar cell can absorb how many sunlights.
Traditional solar cell surface antireflective film adopts plating one deck silicon nitride film, silicon nitride as the feature of surperficial antireflective film is, technique is simple, be easy to industrialization produce, cost is lower, but shortcoming also clearly: silicon nitride is as antireflective film on battery and assembly, and the refractive index of silicon nitride film and thickness cannot match optimum value simultaneously, assembly end is caused to there is certain encapsulation loss after packaging; Meanwhile, owing to mainly considering the optical property of silicon nitride film, on passivation effect, therefore also cannot reach best, cause battery efficiency loss to a certain extent.Traditional silicon nitride anti-reflection film, in the design of refractive index and thickness, considers to there is larger difference respectively from battery angle and assembly angle.
Utility model content
For solving the problem in background technology, the utility model provides a kind of polysilicon solar cell group, blu-ray reflection can be reduced to greatest extent, improve solar cell surface passivation effect, reduce solar cell surface reflectivity, and the optical loss that can not cause because refractive index is not mated after encapsulation.
The technical solution of the utility model is:
A kind of polysilicon solar cell group, it is characterized in that: comprise solar energy polycrystal cell piece, the top of solar energy polycrystal cell piece is provided with some layers of silicon nitride anti-reflecting film, and silicon nitride anti-reflecting film all adopts alveolate texture; The upper surface of the silicon nitride anti-reflecting film of the described the superiors is disposed with EVA adhesive film layer and toughened glass layer from bottom to top; The lower surface of described solar energy polycrystal cell piece is provided with backboard.
As a kind of technical scheme of optimization, the top of described solar energy polycrystal cell piece is provided with two-layer silicon nitride anti-reflecting film; The silicon nitride anti-reflecting film of the silicon nitride anti-reflecting film on upper strata to be refractive index be 2.6-3.0, the silicon nitride anti-reflecting film of the silicon nitride anti-reflecting film of lower floor to be refractive index be 1.9-2.4.
As a kind of technical scheme of optimization, the silicon nitride anti-reflecting film thickness on described upper strata is 35-70 nanometer, and the silicon nitride anti-reflecting film thickness of lower floor is 30-44 nanometer.
Owing to have employed technique scheme, compared with prior art, two-layer silicon nitride anti-reflecting film in the utility model have employed alveolate texture, blu-ray reflection can be reduced to greatest extent, improve solar cell surface passivation effect, reduce solar cell surface reflectivity, and the optical loss that can not cause because refractive index is not mated after encapsulation.
Accompanying drawing explanation
Fig. 1 is the structural representation of the first embodiment of the utility model.
Embodiment
Embodiment
As shown in Figure 1, a kind of polysilicon solar cell group, comprises solar energy polycrystal cell piece 5, and the top of solar energy polycrystal cell piece 5 is provided with some layers of silicon nitride anti-reflecting film, and silicon nitride anti-reflecting film all adopts alveolate texture.The upper surface of the silicon nitride anti-reflecting film of the described the superiors is disposed with EVA adhesive film layer 2 and toughened glass layer 1 from bottom to top.The lower surface of described solar energy polycrystal cell piece 5 is provided with backboard 6.
The top of described solar energy polycrystal cell piece is provided with two-layer silicon nitride anti-reflecting film 3,4.The silicon nitride anti-reflecting film 4 on upper strata for refractive index be the silicon nitride anti-reflecting film of 2.6-3.0, the silicon nitride anti-reflecting film 3 of lower floor for refractive index be the silicon nitride anti-reflecting film of 1.9-2.4.Silicon nitride anti-reflecting film 4 thickness on described upper strata is 35-70 nanometer, and silicon nitride anti-reflecting film 3 thickness of lower floor is 30-44 nanometer.
Two-layer silicon nitride anti-reflecting film in the utility model have employed alveolate texture, blu-ray reflection can be reduced to greatest extent, improve solar cell surface passivation effect, reduce solar cell surface reflectivity, and the optical loss that can not cause because refractive index is not mated after encapsulation.
The utility model is not limited to above-mentioned preferred implementation, and anyone should learn the structural change made under enlightenment of the present utility model, and every have identical or akin technical scheme with the utility model, all belongs to protection range of the present utility model.
Claims (3)
1. a polysilicon solar cell group, is characterized in that: comprise solar energy polycrystal cell piece, and the top of solar energy polycrystal cell piece is provided with some layers of silicon nitride anti-reflecting film, and silicon nitride anti-reflecting film all adopts alveolate texture; The upper surface of the silicon nitride anti-reflecting film of the described the superiors is disposed with EVA adhesive film layer and toughened glass layer from bottom to top; The lower surface of described solar energy polycrystal cell piece is provided with backboard.
2. polysilicon solar cell group according to claim 1, is characterized in that: the top of described solar energy polycrystal cell piece is provided with two-layer silicon nitride anti-reflecting film; The silicon nitride anti-reflecting film of the silicon nitride anti-reflecting film on upper strata to be refractive index be 2.6-3.0, the silicon nitride anti-reflecting film of the silicon nitride anti-reflecting film of lower floor to be refractive index be 1.9-2.4.
3. polysilicon solar cell group according to claim 2, is characterized in that: the silicon nitride anti-reflecting film thickness on described upper strata is 35-70 nanometer, and the silicon nitride anti-reflecting film thickness of lower floor is 30-44 nanometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420569554.9U CN204204883U (en) | 2014-09-30 | 2014-09-30 | A kind of polysilicon solar cell group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420569554.9U CN204204883U (en) | 2014-09-30 | 2014-09-30 | A kind of polysilicon solar cell group |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204204883U true CN204204883U (en) | 2015-03-11 |
Family
ID=52662807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420569554.9U Expired - Fee Related CN204204883U (en) | 2014-09-30 | 2014-09-30 | A kind of polysilicon solar cell group |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204204883U (en) |
-
2014
- 2014-09-30 CN CN201420569554.9U patent/CN204204883U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| DD01 | Delivery of document by public notice |
Addressee: Jianghe electromechanical equipment Engineering Co.,Ltd. The person in charge Document name: Notice of termination of patent right |
|
| DD01 | Delivery of document by public notice | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150311 Termination date: 20200930 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |