CN204130556U - Based on the millimeter wave simple spectrum signal sensor of Meta Materials - Google Patents
Based on the millimeter wave simple spectrum signal sensor of Meta Materials Download PDFInfo
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- CN204130556U CN204130556U CN201420516362.1U CN201420516362U CN204130556U CN 204130556 U CN204130556 U CN 204130556U CN 201420516362 U CN201420516362 U CN 201420516362U CN 204130556 U CN204130556 U CN 204130556U
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- millimeter wave
- open loop
- type gaas
- resonating member
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- 238000001228 spectrum Methods 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002086 nanomaterial Substances 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 9
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000010931 gold Substances 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 230000004044 response Effects 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012358 sourcing Methods 0.000 description 1
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model discloses a kind of millimeter wave simple spectrum signal sensor based on Meta Materials, comprise set gradually from bottom to top substrate layer, n type gaas layer, silicon dioxide layer and metamaterial layer, Ohmic electrode and Schottky electrode; Wherein metamaterial layer is the metal open loop resonating member array with periodically micro nano structure, metal open loop resonating member array contains a kind of figure and characteristic size parameter thereof, this figure has complete absorption characteristic for specific electromagnetic wave, corresponding electro-magnetic wave absorption frequency range can be regulated and controled by the structure and dimensional parameters that change metal open loop resonating member, the electro-magnetic wave absorption intensity of metal open loop resonating member array in metamaterial layer can be regulated and controled by the depletion width changing N-type GaAs.The utility model has high sensitivity and high speed characteristics, by the specific band selecting special metal open loop resonating member structure detector can be worked in millimeter wave.
Description
Technical field
The utility model belongs to acquisition of signal technical field, more specifically, relates to a kind of millimeter wave simple spectrum signal sensor based on Meta Materials.
Background technology
Millimeter wave detection has in various fields such as airport security system, communication, radar and meteorologies to be applied widely.Common millimeter wave detector comprises scanning subsystem, receiver subsystem and calibration subsystem, and its sniffer need configure raising clothes, driving or sweep mechanism of complex precise, and volume and quality are large, low-response.
Requiring under the occasion that high speed, high sensitivity, multispectrum signal detect, many deficiencies can be there is in the performance of existing millimeter wave detector, be mainly reflected in: 1, the spectrum imaging device of millimeter wave detector still needs to configure complicated servo, driving or sweep mechanism, volume and quality large; 2, millimeter wave detector response speed is slower; 3, the spectrographic detection scope of millimeter wave detector can not be expanded easily.
Utility model content
For above defect or the Improvement requirement of prior art, the utility model provides a kind of millimeter wave simple spectrum signal sensor based on Meta Materials, its object is to, solve the technical problem that the volume existed in existing millimeter-wave signal detector is large, low-response, spectrographic detection scope can not be expanded easily.
For achieving the above object, according to an aspect of the present utility model, provide a kind of millimeter wave simple spectrum signal sensor based on Meta Materials, comprise substrate layer, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode and a pair Schottky electrode, n type gaas layer is formed in above substrate layer, silicon dioxide layer is arranged at above n type gaas layer, metamaterial layer is arranged at above n type gaas layer, Ohmic electrode is arranged at above n type gaas layer, Schottky electrode is arranged at above silicon dioxide layer, Ohmic electrode and a pair Schottky electrode are arranged at the two ends, left and right of metamaterial layer respectively, metamaterial layer is the metal level with periodically micro nano structure, to absorb millimeter wave completely.
Preferably, metamaterial layer is the metal level with periodically micro nano structure, and forms Schottky contacts with n type gaas layer.
Preferably, substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
Preferably, Ohmic electrode is nickel, germanium and gold, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
Preferably, Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
Preferably, the making material of metal open loop resonating member array is the titanium and gold that are stacked, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
In general, the above technical scheme conceived by the utility model compared with prior art, can obtain following beneficial effect:
1, the utility model is little based on the millimeter wave simple spectrum signal sensor volume of Meta Materials: the making due to described Meta Materials adopts micro-nano photoetching process, can integrated thousands of metal open loop resonating member in 1mm2 size, the millimeter wave simple spectrum signal sensor volume therefore based on Meta Materials is very little, very light in weight.
2, the utility model is very fast based on the millimeter wave simple spectrum signal sensor response speed of Meta Materials: because the metal open loop resonating member of metamaterial layer has the ability absorbing corresponding wave band electromagnetic signal completely, resonate once produce with corresponding millimere-wave band signal, its resonance response speed belongs to ultrahigh speed response, can produce response signal in very short time.
3, the utility model only needs a small amount of e-sourcings such as AC signal generator to assist it to carry out work based on the millimeter wave simple spectrum signal sensor of Meta Materials, thus saves peripheral circuit resource.
4, the utility model by the graphic parameter of amendment metal open loop resonating member, can change the resonance frequency of metal open loop resonating member, because herein is provided a kind of ability that can change acquisition of signal wavelength according to actual needs.
Accompanying drawing explanation
Fig. 1 is the longitudinal profile schematic diagram of the utility model based on the millimeter wave simple spectrum signal sensor of Meta Materials.
Fig. 2 is the schematic top plan view of the utility model based on the millimeter wave simple spectrum signal sensor of Meta Materials.
Fig. 3 is the structural representation of the utility model based on metal open loop resonating member array in the millimeter wave simple spectrum signal sensor of Meta Materials.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.In addition, if below in described each execution mode of the utility model involved technical characteristic do not form conflict each other and just can mutually combine.
Basic ideas of the present utility model are, the utility model can be corresponding according to designed metal open loop resonating member electromagentic resonance frequency, cause metal to generate heat by the electromagentic resonance of the metal open loop resonating member in metamaterial layer and change the collection of energy that metallic resistance rate realizes electromagnetic wave signal, and by external AC signal by the change detection of resistivity out, thus detect specific millimeter-wave signal.
As shown in Figure 1, the utility model comprises based on the millimeter wave simple spectrum signal sensor of Meta Materials the substrate layer 1, n type gaas layer 2, silicon dioxide layer 3, metamaterial layer 4, Ohmic electrode 5 and a pair Schottky electrode 61 and 62 that set gradually from bottom to top.Wherein, n type gaas layer 2 is formed in above substrate layer 1, silicon dioxide layer 3 is arranged at above n type gaas layer 2, metamaterial layer 4 is arranged at above n type gaas layer 2, Ohmic electrode 5 is arranged at above n type gaas layer 2, Schottky electrode 61 and 62 is arranged at above silicon dioxide layer 3, and Ohmic electrode 5 and a pair Schottky electrode 61 and 62 are arranged at the two ends, left and right of metamaterial layer 4 respectively.
Metamaterial layer 4 is for having the metal level of periodically micro nano structure, and the metal level of described periodicity micro nano structure comprises a kind of figure and characteristic size parameter thereof, and it has complete absorption characteristic for millimeter wave.
Substrate layer can be selected but be not limited to semi-insulating GaAs, can also be silicon, alundum (Al2O3) etc.
The Ohmic electrode 5 of Schottky diode can be selected but be not limited to nickel, germanium, gold, and its thickness is preferably 20-30nm, 200-300nm and 20-30nm; Schottky electrode 61 and 62 can be selected but be not limited to titanium, gold, and its thickness is preferably 20-30nm and 200-250nm.
Metamaterial layer 4 is made up of periodicity micro-nano metal structure, and itself and n type gaas layer 2 form Schottky contacts, has the complete absorbent properties to millimeter wave, can be optimized by the size of adjustment cycle micro-nano metal structure to its service band.
When metamaterial layer 4 detects for electromagnetic signal, the cycle of the periodicity micro nano structure that metamaterial layer 4 adopts much smaller than the wavelength of corresponding electromagnetic signal, thus should meet the real work performance of sub-wavelength device.
As shown in Figure 2, metamaterial layer 4 comprises a metal open loop resonating member array (Split ring resonator array) 41, and wherein the resonance frequency of metal open loop resonating member array 41 corresponds to a millimeter wavelength.In order to clearly show the metamaterial structure and the characteristic size parameter that work in millimere-wave band, the metal open loop resonating member array 41 in metamaterial layer 4 amplifies by the present embodiment, as shown in Figure 3.The making material of metal open loop resonating member array 41 is the titanium and gold that are stacked, thickness is respectively 20 ~ 30nm and 200 ~ 250nm, Schottky contacts is formed with n type gaas layer 2, when working in millimere-wave band, perforate spacing t=2 ~ 10 μm of each metal open loop resonating member in metal open loop resonating member array 41, live width d=4 ~ 14 μm, period L=36 ~ 100 μm, intermediate connection inclination angle theta=0 ~ 90 degree, intermediate connection length p=10 ~ 100 μm, intermediate connection width f≤d/4;
The above-mentioned metal open loop resonating member array be made up of a kind of figure is equivalent to a LC resonant circuit, after target electromagnetic ripple signal 7 impinges perpendicularly on metamaterial layer 4, electromagnetic wave with specific wavelength in millimere-wave band produces and resonates by these LC resonant circuits, absorb the energy of respective wavelength in incident electromagnetic wave 7, and then make metal open loop resonating member heating up, because metal open loop resonating member intermediate connections region is not only thin but also long, surface current during resonance through this region because the unexpected change of resistance must cause greatly temperature to raise rapidly, thus change rapidly the resistivity of metal open loop resonating member metal, by applying 2V alternating voltage on a pair Schottky electrode 61 and 62, when alternating voltage peak-to-peak value amplitude of variation exceedes setting threshold, show that this metal open loop resonating member has detected the signal of corresponding wavelength, by applying on 0 ~ 5V reverse direct current (DC) bias Xiao Yu Ohmic electrode 5, the depletion width of the metal of metamaterial layer 4 and n type gaas layer 2 contact area is increased, improve the absorption efficiency of metamaterial layer 4 pairs of incident electromagnetic waves 7, and increase the resistivity of metal open loop resonating member further, thus the alternating voltage peak-to-peak value making Schottky electrode 61 and 62 detect is more obvious, realizes the detection of millimeter wave simple spectrum signal.
The utility model comprises the steps: based on the preparation method of the millimeter wave simple spectrum signal sensor of Meta Materials
(1) on substrate layer 1, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer 2 thus, its thickness is 1um ~ 2um;
(2) on n type gaas layer 2, pass through plasma enhanced CVD legal system prepared silicon dioxide layer 3, its thickness is 300nm ~ 400nm;
(3) on silicon dioxide layer 3 first by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, then by negative adhesive process photoetching Ohmic electrode, the mode of electron beam evaporation is adopted to evaporate the nickel be stacked successively again, germanium and gold (its thickness is respectively 20-30nm/200-300nm/20-30nm), by nickel, germanium and gold are peeled off, thus formation has nickel, the Ohmic electrode of germanium and gold (its thickness is respectively 20-30nm/200-300nm/20-30nm), to having this nickel, Ohmic electrode 5 is formed after the Ohmic electrode annealing of germanium and gold,
(4) on silicon dioxide layer 3 first by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer 3, then by negative adhesive process photoetching Schottky electrode, the Ni/Au layer (its thickness is respectively 200-250nm/20-30nm) adopting the mode of electron beam evaporation to evaporate successively to be again stacked, Ni/Au layer is peeled off, thus form metamaterial layer 4 and the Schottky electrode 61 with Ni/Au layer (its thickness is respectively 200nm/20nm) respectively, 62, metamaterial layer 4 directly contacts with n type gaas layer 2, Schottky electrode 6 is positioned on silicon dioxide layer 3, and Schottky electrode 61, distance between 62 and metamaterial layer 4 is 1mm ~ 1.5mm.
Therefore, the utility model have employed Schottky diode structure, and it is using the metal open loop resonating member array of metamaterial layer as complete light absorbing medium, causes the change of AC signal peak-to-peak value to obtain acquisition of signal ability by the change of resistivity; By above-mentioned preparation solution integration in the Schottky diode being substrate with monolithic GaAs, realize millimeter wave simple spectrum signal sensor.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (3)
1. the millimeter wave simple spectrum signal sensor based on Meta Materials, comprise substrate layer, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode and a pair Schottky electrode, it is characterized in that, n type gaas layer is formed in above substrate layer, silicon dioxide layer is arranged at above n type gaas layer, metamaterial layer is arranged at above n type gaas layer, Ohmic electrode is arranged at above n type gaas layer, Schottky electrode is arranged at above silicon dioxide layer, Ohmic electrode and a pair Schottky electrode are arranged at the two ends, left and right of metamaterial layer respectively, metamaterial layer is the metal level with periodically micro nano structure, to absorb millimeter wave completely.
2. millimeter wave simple spectrum signal sensor according to claim 1, is characterized in that, metamaterial layer is the metal level with periodically micro nano structure, and forms Schottky contacts with n type gaas layer.
3. millimeter wave simple spectrum signal sensor according to claim 1, is characterized in that, substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420516362.1U CN204130556U (en) | 2014-09-09 | 2014-09-09 | Based on the millimeter wave simple spectrum signal sensor of Meta Materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420516362.1U CN204130556U (en) | 2014-09-09 | 2014-09-09 | Based on the millimeter wave simple spectrum signal sensor of Meta Materials |
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| Publication Number | Publication Date |
|---|---|
| CN204130556U true CN204130556U (en) | 2015-01-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420516362.1U Expired - Lifetime CN204130556U (en) | 2014-09-09 | 2014-09-09 | Based on the millimeter wave simple spectrum signal sensor of Meta Materials |
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| Country | Link |
|---|---|
| CN (1) | CN204130556U (en) |
-
2014
- 2014-09-09 CN CN201420516362.1U patent/CN204130556U/en not_active Expired - Lifetime
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150128 |