CN204067397U - Based on the far infrared simple spectrum signal sensor of Meta Materials - Google Patents
Based on the far infrared simple spectrum signal sensor of Meta Materials Download PDFInfo
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- CN204067397U CN204067397U CN201420514700.8U CN201420514700U CN204067397U CN 204067397 U CN204067397 U CN 204067397U CN 201420514700 U CN201420514700 U CN 201420514700U CN 204067397 U CN204067397 U CN 204067397U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model discloses a kind of far infrared simple spectrum signal sensor based on Meta Materials, comprise set gradually from bottom to top substrate layer, n type gaas layer, silicon dioxide layer and metamaterial layer, Ohmic electrode and Schottky electrode.Metamaterial layer is the metal open loop resonating member array with periodically micro nano structure, described metal open loop resonating member array contains a kind of figure and characteristic size parameter thereof, this figure has complete absorption characteristic for far infrared electromagnetic, corresponding electro-magnetic wave absorption frequency range can be regulated and controled by the structure and dimensional parameters that change metal open loop resonating member, the electro-magnetic wave absorption intensity of metal open loop resonating member array in metamaterial layer can be regulated and controled by the depletion width changing N-type GaAs.The utility model has high sensitivity and high speed characteristics, detector can be worked in a far specific band by selecting special metal open loop resonating member structure.
Description
Technical field
The utility model belongs to acquisition of signal technical field, more specifically, relates to a kind of far infrared simple spectrum signal sensor based on Meta Materials.
Background technology
Far infrared detection has in various fields such as airport security system, material tests, spacing wave detection, space flight and aviation and industrial and agricultural productions to be applied widely.Common far infrared deterctor mainly comprises hygrosensor, Bolometer, and the semiconductor detector be made up of silicon or GaAs.This few class detector principle is ripe, practical.
But, requiring at a high speed and high sensitivity signal detection occasion under, there is following problem in existing far infrared deterctor: what 1, the spectrum imaging device of far infrared deterctor still needed to configure complex precise raises clothes, driving or sweep mechanism, volume and quality large; 2, far infrared deterctor response speed is slower; 3, far infrared deterctor spectrographic detection wavelength can not be changed.
Utility model content
For above defect or the Improvement requirement of prior art, the utility model provides a kind of far infrared simple spectrum signal sensor based on Meta Materials, its object is to, solve the technical problem that the volume existed in existing far infrared signal sensor is large, low-response, spectrographic detection wavelength can not be changed.
For achieving the above object, according to an aspect of the present utility model, provide a kind of far infrared simple spectrum signal sensor based on Meta Materials, comprise the substrate layer, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode and a pair Schottky electrode that set gradually from bottom to top, Ohmic electrode and Schottky electrode are arranged at the two ends, left and right of metamaterial layer respectively, metamaterial layer is the metal level with periodically micro nano structure, and the metal level of this periodicity micro nano structure comprises a kind of figure and characteristic size parameter thereof.
Preferably, substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
Preferably, the material of Ohmic electrode 5 is nickel, germanium and gold, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
Preferably, the material of Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
Preferably, metamaterial layer and n type gaas layer form Schottky contacts.
Preferably, when metamaterial layer is used for electromagnetic signal detection, cycle of the periodicity micro nano structure that it adopts is much smaller than the wavelength of electromagnetic signal.
Preferably, it is titanium and gold that metal open loop resonating member makes material, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
In general, the above technical scheme conceived by the utility model compared with prior art, can obtain following beneficial effect:
1, the utility model is little based on the far infrared simple spectrum signal sensor volume of Meta Materials: the making due to described Meta Materials adopts micro-nano photoetching process, at 1mm
2can integrated thousands of metal open loop resonating member in size, the far infrared simple spectrum signal sensor volume therefore based on Meta Materials is very little, very light in weight;
2, the utility model is very fast based on the far infrared simple spectrum signal sensor response speed of Meta Materials: because the metal open loop resonating member of metamaterial layer has the ability absorbing corresponding wave band electromagnetic signal completely, resonate once produce with corresponding far infrared wave segment signal, its resonance response speed belongs to ultrahigh speed response, can produce response signal in very short time.
3, the utility model only needs a small amount of e-sourcings such as AC signal generator to assist it to carry out work based on the far infrared simple spectrum signal sensor of Meta Materials, thus saves peripheral circuit resource.
4, the utility model by the graphic parameter of amendment metal open loop resonating member, can change the resonance frequency of metal open loop resonating member, because herein is provided a kind of ability that can change acquisition of signal wavelength according to actual needs.
Accompanying drawing explanation
Fig. 1 is the longitudinal profile schematic diagram of the utility model based on the far infrared simple spectrum signal sensor of Meta Materials.
Fig. 2 is the schematic top plan view of the utility model based on the far infrared simple spectrum signal sensor of Meta Materials.
Fig. 3 is the structural representation of the utility model based on metal open loop resonating member array in the metamaterial layer of the far infrared simple spectrum signal sensor of Meta Materials.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.In addition, if below in described each execution mode of the utility model involved technical characteristic do not form conflict each other and just can mutually combine.
Basic ideas of the present utility model are, the utility model can be corresponding according to designed metal open loop resonating member electromagentic resonance frequency, cause metal to generate heat by the electromagentic resonance of the metal open loop resonating member in metamaterial layer and change the collection of energy that metallic resistance rate realizes electromagnetic wave signal, and by external AC signal by the change detection of resistivity out, thus detect specific far infrared signal.
As shown in Figure 1, the utility model comprises based on the far infrared simple spectrum signal sensor of Meta Materials the substrate layer 1, n type gaas layer 2, silicon dioxide layer 3, metamaterial layer 4, Ohmic electrode 5 and a pair Schottky electrode 61 and 62 that set gradually from bottom to top.Wherein, n type gaas layer 2 is arranged at above substrate layer 1, silicon dioxide layer 3 is arranged at above n type gaas layer 2, metamaterial layer 4 is arranged at above n type gaas layer 2, Ohmic electrode 5 is arranged at above n type gaas layer 2, Schottky electrode 6 is arranged at above silicon dioxide layer 3, and Ohmic electrode 5 and a pair Schottky electrode 61 and 62 are arranged at the two ends, left and right of metamaterial layer 4 respectively.
Metamaterial layer 4 is for having the metal level of periodically micro nano structure, and the metal level of this periodicity micro nano structure comprises a kind of figure and characteristic size parameter thereof, and it has complete absorption characteristic for far infrared electromagnetic.
Substrate layer can be selected but be not limited to semi-insulating GaAs, can also be silicon, alundum (Al2O3) etc.
The Ohmic electrode 5 of Schottky diode can be selected but be not limited to nickel, germanium, gold, and its thickness is preferably 20-30nm, 200-300nm and 20-30nm; Schottky electrode 61 and 62 can be selected but be not limited to titanium, gold, and its thickness is preferably 20-30nm and 200-250nm.
Metamaterial layer 4 is made up of periodicity micro-nano metal structure, and itself and n type gaas layer 2 form Schottky contacts, has the complete absorbent properties to far infrared electromagnetic, can be optimized by the size of adjustment cycle micro-nano metal structure to its service band.
When metamaterial layer 4 detects for electromagnetic signal, the cycle of the periodicity micro nano structure that metamaterial layer 4 adopts much smaller than the wavelength of respective signal, thus should meet the real work performance of sub-wavelength device.
As shown in Figure 2, metamaterial layer 4 comprises a metal open loop resonating member array 41, and wherein the resonance frequency of 41 corresponds to a specific far infrared wavelength.In order to clearly show the metamaterial structure and the characteristic size parameter that work in far infrared band, the metal open loop resonating member array 41 in metamaterial layer 4 amplifies by the present embodiment, as shown in Figure 3.It is titanium, gold that the metal open loop resonating member of 41 makes material, thickness is respectively 20 ~ 30nm and 200 ~ 250nm, Schottky contacts is formed with n type gaas layer 2, when working in far infrared band, perforate spacing t=80 ~ 200nm, live width d=200 ~ 600nm, outer width L=500 ~ 2000nm, intermediate connection inclination angle theta=0 ~ 90 degree, intermediate connection length p=300 ~ 2000nm, intermediate connection width f≤d/4.
The above-mentioned metal open loop resonating member array be made up of a kind of figure is equivalent to a LC resonant circuit, after target electromagnetic ripple signal 7 impinges perpendicularly on metamaterial layer 4, electromagnetic wave with specific wavelength in far infrared band produces and resonates by these LC resonant circuits, absorb the energy of respective wavelength in incident electromagnetic wave 7, and then make metal open loop resonating member heating up, because metal open loop resonating member intermediate connections region is not only thin but also long, surface current during resonance through this region because the unexpected change of resistance must cause greatly temperature to raise rapidly, thus change rapidly the resistivity of metal open loop resonating member metal, by applying 2V alternating voltage on a pair Schottky electrode 61 and 62, when alternating voltage peak-to-peak value amplitude of variation exceedes setting threshold, show that this metal open loop resonating member has detected the signal of corresponding wavelength, by applying on 0 ~ 5V reverse direct current (DC) bias Xiao Yu Ohmic electrode 5, the depletion width of the metal of metamaterial layer 4 and n type gaas layer 2 contact area is increased, improve the absorption efficiency of metamaterial layer 4 pairs of incident electromagnetic waves 7, and increase the resistivity of metal open loop resonating member further, thus the alternating voltage peak-to-peak value making Schottky electrode 61 and 62 detect is more obvious, realizes the detection of far infrared simple spectrum signal.
The utility model comprises the steps: based on the preparation method of the far infrared simple spectrum signal sensor of Meta Materials
(1) on substrate layer 1, inject Si ion by metallorganic chemical vapor deposition method, doping content is 1 × 10
16cm
-3~ 9 × 10
18cm
-3, form n type gaas layer 2 thus, its thickness is 1um ~ 2um;
(2) on n type gaas layer 2, pass through plasma enhanced CVD legal system prepared silicon dioxide layer 3, its thickness is 300nm ~ 400nm;
(3) on silicon dioxide layer 3 by positive adhesive process photoetching Ohmic electrode contact hole, and use wet etching to carry out corrosion treatment to Ohmic electrode contact hole, by negative adhesive process photoetching Ohmic electrode, the Ni/Ge/Au layer (its thickness is respectively 20-30nm/200-300nm/20-30nm) adopting the mode of electron beam evaporation to evaporate successively to be again stacked, Ni/Ge/Au layer is peeled off, thus form the Ohmic electrode with Ni/Ge/Au layer (its thickness is respectively 20-30nm/200-300nm/20-30nm), to the Ohmic electrode annealing with this Ni/Ge/Au layer, to form Ohmic electrode 5,
(4) on silicon dioxide layer 3 by positive adhesive process photoetching schottky junctions contact hole, and use wet etching to carry out corrosion treatment to schottky junctions contact hole, with corrode silicon dioxide layer 3, by negative adhesive process photoetching Schottky electrode, the mode of electron beam evaporation is adopted to evaporate the Ni/Au layer (its thickness is respectively 200-250nm/20-30nm) be stacked successively, Ni/Au layer is peeled off, thus form metamaterial layer 4 and the Schottky electrode 61 with Ni/Au layer (its thickness is respectively 200nm/20nm) respectively, 62, wherein metamaterial layer 4 directly contacts with n type gaas layer 2, Schottky electrode 61, 62 are arranged on silicon dioxide layer 3, and Schottky electrode 61, distance between 62 and metamaterial layer 4 is 1mm ~ 1.5mm.
Therefore, the utility model have employed Schottky diode structure, and it is using the metal open loop resonating member array of metamaterial layer as complete light absorbing medium, causes the change of AC signal peak-to-peak value to obtain acquisition of signal ability by the change of resistivity; By above-mentioned preparation solution integration in the Schottky diode being substrate with monolithic GaAs, realize far infrared simple spectrum signal sensor.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (7)
1. the far infrared simple spectrum signal sensor based on Meta Materials, comprise the substrate layer, n type gaas layer, silicon dioxide layer, metamaterial layer, Ohmic electrode and a pair Schottky electrode that set gradually from bottom to top, it is characterized in that, Ohmic electrode and Schottky electrode are arranged at the two ends, left and right of metamaterial layer respectively, metamaterial layer is the metal level with periodically micro nano structure, and the metal level of this periodicity micro nano structure comprises a kind of figure and characteristic size parameter thereof.
2. far infrared simple spectrum signal sensor according to claim 1, is characterized in that, substrate layer is semi-insulating GaAs, silicon or alundum (Al2O3).
3. far infrared simple spectrum signal sensor according to claim 1, is characterized in that, the material of Ohmic electrode 5 is nickel, germanium and gold, and its thickness is respectively 20-30nm, 200-300nm and 20-30nm.
4. far infrared simple spectrum signal sensor according to claim 1, is characterized in that, the material of Schottky electrode is titanium and gold, and its thickness is respectively 20-30nm and 200-250nm.
5. far infrared simple spectrum signal sensor according to claim 1, is characterized in that, metamaterial layer and n type gaas layer form Schottky contacts.
6. far infrared simple spectrum signal sensor according to claim 1, is characterized in that, when metamaterial layer is used for electromagnetic signal detection, cycle of the periodicity micro nano structure that it adopts is much smaller than the wavelength of electromagnetic signal.
7. far infrared simple spectrum signal sensor according to claim 1, is characterized in that, it is titanium and gold that metal open loop resonating member makes material, and its thickness is respectively 20 ~ 30nm and 200 ~ 250nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420514700.8U CN204067397U (en) | 2014-09-09 | 2014-09-09 | Based on the far infrared simple spectrum signal sensor of Meta Materials |
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|---|---|---|---|
| CN201420514700.8U CN204067397U (en) | 2014-09-09 | 2014-09-09 | Based on the far infrared simple spectrum signal sensor of Meta Materials |
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| CN204067397U true CN204067397U (en) | 2014-12-31 |
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2014
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