CN204088305U - Novel high-density can stack package structure - Google Patents

Novel high-density can stack package structure Download PDF

Info

Publication number
CN204088305U
CN204088305U CN201420355574.6U CN201420355574U CN204088305U CN 204088305 U CN204088305 U CN 204088305U CN 201420355574 U CN201420355574 U CN 201420355574U CN 204088305 U CN204088305 U CN 204088305U
Authority
CN
China
Prior art keywords
post
substrate
tin
chip
lead wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201420355574.6U
Other languages
Chinese (zh)
Inventor
陈灵芝
郁科锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JCET Group Co Ltd
Original Assignee
Jiangsu Changjiang Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN201420355574.6U priority Critical patent/CN204088305U/en
Application granted granted Critical
Publication of CN204088305U publication Critical patent/CN204088305U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

The utility model relates to a kind of novel high-density can stack package structure and manufacture method, described encapsulating structure comprises metal lead wire frame or substrate (5), described metal lead wire frame or substrate (5) front are pasted with chip (3), described chip (3) is provided with copper post (2) around, described copper post (2) top is provided with tin post (4), described copper post (2), chip (3) and tin post (4) outer peripheral areas are encapsulated with plastic packaging material (1), the height of described plastic packaging material (1) exceedes the height of tin post (4), described tin post (4) top area offers installing hole (6).The beneficial effects of the utility model are: it combinationally uses plating and laser drill mode improves the precision of substrate design and manufacture, can realize Finepitch(thin space) packaging body stacking, improve the safety and reliability of packaging body.

Description

Novel high-density can stack package structure
Technical field
The present invention relates to a kind of novel high-density can stack package structure, belongs to technical field of semiconductor encapsulation.
Background technology
As shown in figure 12, the mainly stacking top layer substrate encapsulation on Lower level logical substrate of its manufacture craft, utilizes the metallic copper post on underlying substrate to realize the stacking of two packaging bodies with electrically interconnected by the attachment of soldered ball, Reflow Soldering to the packing forms of current PoP.
Above-mentioned PoP(packaging body stacked package body) encapsulating structure has the following disadvantages:
1, the electric connection copper post of bottom substrate is by the restriction of height with diameter dimension in electroplating manufacturing process, cannot accomplish high density designs and manufacture;
2, interconnected by the metallic tin ball of the outer pin of top layer packaging body between bottom package body and glob top, after Reflow Soldering, metallic tin club produces thermal deformation, top layer packaging solder ball spacing can than little before Reflow Soldering, for avoiding the short circuit between soldered ball, so top layer can not be adopted to be encapsulated as Fine Pitch(thin space) encapsulation stacking;
If 3, substrate package body is stacking adopt that many little metallic tin balls are stacking to carry out interconnected for reducing sphere gap, in the process that attachment is stacking, contraposition difficulty, easily causes accuracy error or upper sphere landing, causes open circuit or Effect of Short Circuit attachment yield.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, there is provided a kind of novel high-density can stack package structure and manufacture method, it combinationally uses plating and laser drill mode improves the precision of substrate design and manufacture, Fine pitch(thin space can be realized) packaging body stacking, improve the safety and reliability of packaging body.
The object of the present invention is achieved like this: a kind of novel high-density can stack package structure, it comprises metal lead wire frame or substrate, described metal lead wire frame or substrate front side are pasted with chip, described chip circumference is provided with copper post, described copper column top is provided with tin post, described copper post, chip and tin post outer peripheral areas are encapsulated with plastic packaging material, and the height of described plastic packaging material exceedes the height of tin post, and region, described tin column top offers installing hole.
Compared with prior art, the present invention has following beneficial effect:
1, the metallic circuit that is electrically connected between substrate uses plating and laser drill mode to make, and two kinds of process matching composition complementaries can avoid Direct Electroplating metal column cannot reach Fine pitch(thin space) problem, realize the design and manufaction of high-density line;
2, plating makes the connection metal line layer of high-density base board is copper, tin, and in the stacking process of packaging body, tin and metallic tin ball directly reflux and combine, and reduce the stability that production difficulty improves technique;
3, during bumps melt, tin, by staying in ring-type copper post metal column or being full of annular metal post to alleviate the subside spilling of salient point in reflux course, avoids short circuit;
4, in the stacking process of packaging body, electrotinning is directly combined closely with layers of copper and metallic tin sphere, and compactness is better than the combination of layers of copper and metallic tin ball, substantially increases the reliability of stacked package body.
Accompanying drawing explanation
Fig. 1 ~ Figure 10 is that a kind of novel high-density of the present invention can each operation schematic diagram of manufacture method of stack package structure.
Figure 11 is that a kind of novel high-density of the present invention can the structural representation of stacked package body on stack package structure.
Figure 12 is the structural representation of current POP packing forms.
Wherein:
Plastic packaging material 1
Copper post 2
Chip 3
Tin post 4
Metal lead wire frame or substrate 5
Installing hole 6.
Embodiment
See Figure 10, a kind of novel high-density of the present invention can stack package structure, it comprises metal lead wire frame or substrate 5, described metal lead wire frame or substrate 5 front are pasted with chip 3, be provided with copper post 2 around described chip 3, described copper post 2 top is provided with tin post 4, and described copper post 2, chip 3 and tin post 4 outer peripheral areas are encapsulated with plastic packaging material 1, the height of described plastic packaging material 1 exceedes the height of tin post 4, and described tin post 4 top area offers installing hole 6.
Its manufacture method is as follows:
Step one, get metal lead wire frame or substrate surface and paste photoresistance film operation
See Fig. 1, get the suitable metal lead wire frame of a slice thickness or substrate sticks the photoresistance film can carrying out exposure imaging respectively in front and the back side, described photoresistance film can adopt wet type photoresistance film or dry type photoresistance film;
Step 2, metal lead wire frame or substrate front side removal unit divide photoresistance film
See Fig. 2, the metal lead wire frame utilizing exposure imaging equipment step one to be completed to paste photoresistance film operation or substrate front side are carried out graph exposure, development and removal unit and are divided figure photoresistance film, to expose the regional graphics that metal lead wire frame or the follow-up needs of substrate front side carry out electroplating;
Step 3, electro-coppering post
See Fig. 3, in step 2, metal lead wire frame or substrate front side removal unit divide electric plated with copper post in the region of photoresistance film, and metal column can play the effect carrying out with other packaging body being electrically connected;
Step 4, electrotinning post
See Fig. 4, region, the copper column top electrotinning post in step 3;
Step 5, removal photoresistance film
See Fig. 5, remove the photoresistance film of metal lead wire frame or substrate surface;
Step 6, organic layer are protected
See Fig. 6, carry out the protection of metal organic layer at metal lead wire frame or substrate surface;
Step 7, pasting chip
See Fig. 7, pasting chip on metal lead wire frame or substrate, pasting chip can adopt formal dress, upside-down mounting, mode such as some glue, plumber's solder etc.;
Step 8, encapsulating
See Fig. 8, plastic packaging material is adopted to carry out plastic packaging at metal lead wire frame or substrate front side;
Step 9, laser beam drilling
See Fig. 9, in corresponding step 8, the tin columnar region of metal lead wire frame or substrate front side carries out laser beam drilling, to expose the tin post be embedded in plastic packaging material;
Step 10, cutting finished product
See Figure 10, semi-finished product step 9 being completed perforate carry out cutting operation, make originally to integrate in array aggregate mode and the plastic-sealed body module more than contain chip is cut independent.

Claims (1)

1. a novel high-density can stack package structure, it is characterized in that: it comprises metal lead wire frame or substrate (5), described metal lead wire frame or substrate (5) front are pasted with chip (3), described chip (3) is provided with copper post (2) around, described copper post (2) top is provided with tin post (4), described copper post (2), chip (3) and tin post (4) outer peripheral areas are encapsulated with plastic packaging material (1), the height of described plastic packaging material (1) exceedes the height of tin post (4), and described tin post (4) top area offers installing hole (6).
CN201420355574.6U 2014-06-30 2014-06-30 Novel high-density can stack package structure Expired - Lifetime CN204088305U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420355574.6U CN204088305U (en) 2014-06-30 2014-06-30 Novel high-density can stack package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420355574.6U CN204088305U (en) 2014-06-30 2014-06-30 Novel high-density can stack package structure

Publications (1)

Publication Number Publication Date
CN204088305U true CN204088305U (en) 2015-01-07

Family

ID=52180985

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420355574.6U Expired - Lifetime CN204088305U (en) 2014-06-30 2014-06-30 Novel high-density can stack package structure

Country Status (1)

Country Link
CN (1) CN204088305U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051443A (en) * 2014-06-30 2014-09-17 江苏长电科技股份有限公司 Novel high-density stackable packaging structure and manufacturing method thereof
CN106505045A (en) * 2015-09-08 2017-03-15 艾马克科技公司 There is the semiconductor packages and method that can route the conductive substrate being encapsulated
CN111584478A (en) * 2020-05-22 2020-08-25 甬矽电子(宁波)股份有限公司 Laminated chip packaging structure and laminated chip packaging method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051443A (en) * 2014-06-30 2014-09-17 江苏长电科技股份有限公司 Novel high-density stackable packaging structure and manufacturing method thereof
CN104051443B (en) * 2014-06-30 2017-02-01 江阴芯智联电子科技有限公司 High-density stackable packaging structure and manufacturing method thereof
CN106505045A (en) * 2015-09-08 2017-03-15 艾马克科技公司 There is the semiconductor packages and method that can route the conductive substrate being encapsulated
CN106505045B (en) * 2015-09-08 2021-10-29 艾马克科技公司 Semiconductor package with routable encapsulated conductive substrate and method
CN111584478A (en) * 2020-05-22 2020-08-25 甬矽电子(宁波)股份有限公司 Laminated chip packaging structure and laminated chip packaging method
CN111584478B (en) * 2020-05-22 2022-02-18 甬矽电子(宁波)股份有限公司 Laminated chip packaging structure and laminated chip packaging method

Similar Documents

Publication Publication Date Title
CN104051443B (en) High-density stackable packaging structure and manufacturing method thereof
US20180114786A1 (en) Method of forming package-on-package structure
CN102543937B (en) Flip chip on-chip package and manufacturing method thereof
CN202839599U (en) Chip-embedded-type three-dimensional wafer-level packaging structure
US10242966B1 (en) Thin bonded interposer package
CN104538375A (en) Fan-out PoP packaging structure and manufacturing method thereof
CN104505382A (en) Wafer-level fan-out PoP encapsulation structure and making method thereof
US20230335533A1 (en) Semiconductor device package and method for manufacturing the same
CN103730380B (en) Forming method of packaging structure
CN204088305U (en) Novel high-density can stack package structure
CN104465611A (en) Array type solder ball arrangement packaging structure for achieving PoP interconnection and manufacturing method of array type solder ball arrangement packaging structure for achieving PoP interconnection
CN104659004A (en) Pop structure and manufacture method thereof
CN104538376A (en) POP packaging structure with copper pillars and preparation method thereof
CN103151274A (en) Semiconductor component and manufacturing method thereof
CN203118928U (en) Packaging structure
CN105161474A (en) Fan-out packaging structure and production technology thereof
CN104576608A (en) Membrane plastic-packaged POP structure and preparation method thereof
CN103915423A (en) Three-dimensional stack-packaging structure and method for chips
CN102956547B (en) Semiconductor packaging structure and manufacturing method thereof
CN201838581U (en) Encapsulation structure without pin around
KR101099583B1 (en) Wafer level package having chip stack structure and method for manufacturing the same
CN108231729B (en) Packaging substrate, chip packaging body and chip stacking and packaging method
TWI628756B (en) Package structure and its fabrication method
CN106098676A (en) Multichannel stack package structure and method for packing
CN104600056B (en) A kind of multi-chip three-dimensional hybrid encapsulating structure and preparation method thereof

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160429

Address after: 214434 Jiangyin, Jiangsu, Chengjiang city street, Long Hill Road, No. 78

Patentee after: Jiangsu Changjiang Electronics Technology Co., Ltd.

Address before: 214434 Jiangyin, Jiangsu Province, Chengjiang Mayor Hill Road, No. 78, No.

Patentee before: Jiangsu Changjiang Electronics Technology Co., Ltd.