CN204088294U - Semiconductor laser transmitter band is heat sink ceramic package - Google Patents
Semiconductor laser transmitter band is heat sink ceramic package Download PDFInfo
- Publication number
- CN204088294U CN204088294U CN201420501957.XU CN201420501957U CN204088294U CN 204088294 U CN204088294 U CN 204088294U CN 201420501957 U CN201420501957 U CN 201420501957U CN 204088294 U CN204088294 U CN 204088294U
- Authority
- CN
- China
- Prior art keywords
- ceramic member
- ceramic
- base plate
- metal
- becket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 230000008878 coupling Effects 0.000 claims abstract description 13
- 238000010168 coupling process Methods 0.000 claims abstract description 13
- 238000005859 coupling reaction Methods 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000003466 welding Methods 0.000 claims abstract description 10
- 238000005219 brazing Methods 0.000 claims description 3
- 238000004021 metal welding Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- BLNMQJJBQZSYTO-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu][Mo][Cu] BLNMQJJBQZSYTO-UHFFFAOYSA-N 0.000 description 2
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model discloses the heat sink ceramic package of a kind of semiconductor laser transmitter band, relate to technical field of semiconductor device.Comprise becket, metal lead wire, metal base plate, ceramic member, optical coupling interface and blank cover, described ceramic member is square body, ceramic member bottom weld metal base plate, ceramic member top weld metal ring, two side is provided with at least one pair of symmetrical concave station, and outside concave station weld metal goes between, and the front two sides of ceramic member are provided with through hole, welding optical coupling interface, becket and blank cover adopt parallel seam welding.The utility model alleviates the weight of device outer case, reduces the volume of device outer case, is conducive to the miniaturization of device, reduces device cost.
Description
Technical field
The utility model relates to technical field of semiconductor device.
Background technology
Traditional semiconductor laser transmitter and transmitter module are metal wall-ceramic insulation minor structure, as shown in Figure 1, comprise becket 1, ceramic insulator 2, metal lead wire 3, metal body of wall 4 and metal base plate 5, wherein metal body of wall 4 is metal material, and generating laser entirety is the box body that metal body of wall 4 and metal base plate 5 are formed, at metal case lateral opening hole, welding ceramics insulator 2 in hole, weld metal lead-in wire 3 on ceramic insulator 2, there is becket 1 ceramic inside, with metal lead wire 3 electric connection.Metal base plate 5 is the metal that thermal conductivity is high, and the heat produced when semiconductor laser transmitter and transmitter module work is delivered on the fin of housing exterior.But, metal wall-ceramic insulator structural housing due to metallic member volume large, cause the heavier-weight of shell, gold-plated area is large, cost is high, be unfavorable for that semiconductor laser transmitter and transmitter module reduce costs and reduce the weight of system, have impact on device and the application of module on complete machine.
Utility model content
Technical problem to be solved in the utility model is to provide the heat sink ceramic package of a kind of semiconductor laser transmitter band, adopts pottery as the shell of generating laser, alleviates the weight of shell, reduce material cost.
For solving the problems of the technologies described above, technical solution adopted in the utility model is:
The heat sink ceramic package of a kind of semiconductor laser transmitter band, comprise becket, metal lead wire, metal base plate, ceramic member, optical coupling interface and blank cover, described ceramic member is square body, ceramic member bottom weld metal base plate, ceramic member top weld metal ring, two side is provided with at least one pair of symmetrical concave station, outside concave station weld metal lead-in wire, the front two sides of ceramic member are provided with through hole, and welding optical coupling interface, becket and blank cover adopt parallel seam welding.
Further technical scheme, described becket, metal lead wire, metal base plate, ceramic member, interface between optical coupling interface and blank cover adopt brazing metal welding.
Further technical scheme, the constituent material of described metal base plate comprises copper, tungsten copper, molybdenum copper, copper molybdenum copper, aluminum/silicon carbide, aluminium silicon.
Further technical scheme, described ceramic member is aluminium oxide ceramics, and composition is 90% ~ 96%.
The beneficial effect adopting technique scheme to produce is: the utility model adopts ceramic material as the shell of generating laser, alleviate the weight of device outer case, reduce material cost, play structure function and insulation function simultaneously, reduce the volume of device outer case, be conducive to the miniaturization of device; The main part of shell is ceramic material, only gold-plated on metallized area and other metal parts, reduces gold-plated cost.
Accompanying drawing explanation
Fig. 1 is traditional semiconductor laser transmitter structural representation;
Fig. 2 is structural representation of the present utility model;
In the accompanying drawings: 1, becket, 2, ceramic insulator, 3, metal lead wire, 4, metal body of wall, 5, metal base plate, 6, ceramic member, 7, through hole.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
As shown in Figure 2, semiconductor laser transmitter band is heat sink ceramic package, comprise becket 1, metal lead wire 3, metal base plate 5, ceramic member 6, optical coupling interface and blank cover, described ceramic member 6 is square body, ceramic member 6 bottom weld metal base plate 5, ceramic member 6 top weld metal ring 1, two side is provided with at least one pair of symmetrical concave station, outside concave station weld metal lead-in wire 3, the front two sides of ceramic member 6 are provided with through hole 7, welding optical coupling interface, becket 1 and blank cover adopt parallel seam welding, semiconductor laser transmitter chip and circuit are directly shelved on metal base plate 5 by through hole 7, and dispelled the heat by metal base plate 5, ceramic member 6 and blank cover carry out parallel seam welding.Becket 1, metal lead wire 3, ceramic member 6, metal base plate 5, interface between metal optical coupling interface and blank cover adopt brazing metal welding.Ceramic member 6, metal base plate 5, metal lead wire 3, becket 1, metal optical coupling interface and blank cover form sealing body of wall, for the semiconductor laser transmitter chip of inside and circuit provide airtight environment to protect and mechanical support.
Metal base plate 5 material comprises the material of the high heat conductance such as copper, tungsten copper, molybdenum copper, copper molybdenum copper, aluminum/silicon carbide, aluminium silicon.Ceramic member 6 is aluminium oxide ceramics, and composition is 90% ~ 96%.Ceramic member 6 adopts multi-layer ceramics process to make, and adopts casting technique to make aluminium oxide ceramic chips.Ceramic chips mould and punch device machine-shaping, ceramic chips makes metallization pattern with tungsten slurry or molybdenum slurry, laminated ceramic chips is processed into overall green array by laminating technology, and green array is cut into single green part, then carries out high temperature sintering and form.Specifically through curtain coating, net processed, blanking and punching, metallization printing, earnestly, lamination, earnestly, make ceramic member 6 after sintering and nickel plating processing technology.Ceramic member 6, through nickel plating, with metal lead wire 3, becket 1, optical coupling joint weld, then carries out surface gold-plating, makes finished product.
The utility model, owing to adopting ceramic material as the shell of generating laser, not only alleviates the weight of shell, and reduces material cost.Simultaneously because ceramic package is non-conductive, serve insulation function, ensure that the fail safe of device.Reduce the volume of shell simultaneously, be conducive to the miniaturization of device.Main part due to device outer case is ceramic material, only need be gold-plated on metallized area and other metal parts, reduces the cost of device, has saved the energy.
Claims (2)
1. the heat sink ceramic package of semiconductor laser transmitter band, it is characterized in that comprising becket (1), metal lead wire (3), metal base plate (5), ceramic member (6), optical coupling interface and blank cover, described ceramic member (6) is square body, ceramic member (6) bottom weld metal base plate (5), ceramic member (6) top weld metal ring (1), two side is provided with at least one pair of symmetrical concave station, outside concave station weld metal lead-in wire (3), ceramic member (6) front two sides are provided with through hole (7), welding optical coupling interface, becket (1) and blank cover adopt parallel seam welding.
2. the heat sink ceramic package of semiconductor laser transmitter band according to claim 1, is characterized in that described becket (1), metal lead wire (3), metal base plate (5), ceramic member (6), interface between optical coupling interface and blank cover adopts brazing metal welding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420501957.XU CN204088294U (en) | 2014-09-02 | 2014-09-02 | Semiconductor laser transmitter band is heat sink ceramic package |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420501957.XU CN204088294U (en) | 2014-09-02 | 2014-09-02 | Semiconductor laser transmitter band is heat sink ceramic package |
Publications (1)
Publication Number | Publication Date |
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CN204088294U true CN204088294U (en) | 2015-01-07 |
Family
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CN201420501957.XU Expired - Lifetime CN204088294U (en) | 2014-09-02 | 2014-09-02 | Semiconductor laser transmitter band is heat sink ceramic package |
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CN (1) | CN204088294U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109590562A (en) * | 2018-12-14 | 2019-04-09 | 合肥中航天成电子科技有限公司 | A kind of semiconductor shells welding method and semiconductor shells position rack mounting method |
-
2014
- 2014-09-02 CN CN201420501957.XU patent/CN204088294U/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109590562A (en) * | 2018-12-14 | 2019-04-09 | 合肥中航天成电子科技有限公司 | A kind of semiconductor shells welding method and semiconductor shells position rack mounting method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 050000 No. 113 Cooperative Road, Xinhua District, Shijiazhuang City, Hebei Province Patentee after: Hebei Zhongchi Electronic Technology Co.,Ltd. Address before: 050000 No. 113 Cooperative Road, Xinhua District, Shijiazhuang City, Hebei Province Patentee before: HE BEI SINOPACK ELECTRONIC TECH Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20150107 |