CN204030267U - Semiconductor laser ceramic package lead-in wire vertical welding structure - Google Patents
Semiconductor laser ceramic package lead-in wire vertical welding structure Download PDFInfo
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- CN204030267U CN204030267U CN201420501701.9U CN201420501701U CN204030267U CN 204030267 U CN204030267 U CN 204030267U CN 201420501701 U CN201420501701 U CN 201420501701U CN 204030267 U CN204030267 U CN 204030267U
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Abstract
The utility model discloses a kind of semiconductor laser ceramic package lead-in wire vertical welding structure, relate to technical field of semiconductors.Comprise ceramic package, metal lead wire, becket, metal optical coupling interface and blank cover, step is provided with in the cavity of described ceramic package, step surface is bonding table top, without step outside the cavity of ceramic package, wire bonds plane is provided with at lateral surface, wire bonds plane is provided with metallized area, described metallized area welds flat metal lead wire vertically downward.The utility model reduces the shell of semiconductor laser and the volume of whole encapsulation, and the size that wire bonds region can be designed is larger, increases the solder side of lead-in wire, makes structure more firm, improves lead-in wire intensity.
Description
Technical field
The utility model relates to technical field of semiconductors.
Background technology
Semiconductor laser ceramic package is generally the structure of lead-in wire plane-welding, as shown in Figure 1, comprises ceramic package 4, metal lead wire 7, becket 2, metal optical coupling interface and blank cover.Ceramic package 4 be pottery form box body, upper weld becket 2, solder up cover plate on becket 2, before be provided with through hole, be connected with metal optical coupling interface.Ceramic package 4 inside is cavity, and be provided with convex step in cavity, inner convex step upper surface is bonding table top 3.Ceramic package 4 side is also provided with convex step, and external male step upper surface forms wire bonds table top 1.Inner bonding table top 3 and outside lead welding table top 1 there is metallization, inside and outside metallization is connected by the metallization that pottery is inner, the metal of inner convex step turns to the region of bonding gold wire, the metal lead wire 7 of the metallization soldering flat shape on outer steps, wire bonds table top 1 is parallel with bonding table top 3.Planar section and the outside circuit board contacts of metal lead wire 7, realize electrical connection.Lead-in wire plane-welding structure due to metal lead wire 7 long at ceramic package 4 extension, for ensureing that metal lead wire 7 is good with the circuit board contacts be connected, need circuit board to have certain width, cause overall structure size larger, be unfavorable for the miniaturization of shell and external circuit.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of semiconductor laser ceramic package lead-in wire vertical welding structure, reduce the shell of semiconductor laser and the volume of whole encapsulation, the size that wire bonds region can be designed is larger, increase the solder side of lead-in wire, make structure more firm, improve lead-in wire intensity.
For solving the problems of the technologies described above, technical solution adopted in the utility model is:
A kind of semiconductor laser ceramic package lead-in wire vertical welding structure, comprise ceramic package, metal lead wire, becket, metal optical coupling interface and blank cover, step is provided with in the cavity of described ceramic package, step surface is bonding table top, without step outside the cavity of ceramic package, be provided with wire bonds plane at lateral surface, wire bonds plane is provided with metallized area, described metallized area welds flat metal lead wire vertically downward.
Further technical scheme, described ceramic package, metal lead wire, becket, metal optical coupling interface and blank cover adopt brazing metal welding.
Further technical scheme, described ceramic package is aluminium oxide ceramics, and composition is 90% ~ 96%.
The beneficial effect adopting technique scheme to produce is: structure of the present utility model is the structure vertically downward that goes between, and the overall width of ceramic package is diminished, reduces the volume of ceramic package; Lead-in wire can be inserted into downwards on the external circuit board, and the jack on circuit board, below ceramic package, does not take the space beyond ceramic package, can reduce the overall volume encapsulated; Larger space is had in the ceramic package side arrangement lead pad lead pad compared in plane, can the size of wire bonds region design is larger, increase the solder side of lead-in wire, make structure more firm, improve the lead-in wire intensity of ceramic package.
Accompanying drawing explanation
Fig. 1 is existing lead-in wire plane-welding structure;
Fig. 2 is front view of the present utility model;
Fig. 3 is right view of the present utility model;
In the accompanying drawings: 1, wire bonds table top, 2, becket, 3, bonding table top, 4, ceramic package, 5, wire bonds plane, 6, metal optical coupling interface, 7, metal lead wire.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
As shown in Figure 2, semiconductor laser ceramic package lead-in wire vertical welding structure, comprise ceramic package 4, metal lead wire 7, becket 2, metal optical coupling interface 6 and blank cover, step is provided with in the cavity of described ceramic package 4, step surface is bonding table top 3, without step outside the cavity of ceramic package 4, is provided with wire bonds plane 5 at lateral surface, wire bonds plane 5 is provided with metallized area, described metallized area welds flat metal lead wire 7 vertically downward.The sealing mode of blank cover and becket 2 is parallel seam welding.Ceramic package 4, metal lead wire 7, metal optical coupling interface 6 and blank cover form sealing body of wall, for the semiconductor laser chip of inside and circuit provide airtight environment to protect and mechanical support.
Ceramic package 4, metal lead wire 7, becket 2, metal optical coupling interface 6 and blank cover adopt brazing metal welding.Ceramic package 4 is aluminium oxide ceramics, and composition is 90% ~ 96%.Ceramic package 4 adopts multi-layer ceramics process to make.
Casting technique is adopted to make aluminium oxide ceramic chips.Ceramic chips mould and punch device machine-shaping, ceramic chips makes metallization pattern with tungsten slurry or molybdenum slurry, and laminated ceramic chips is processed into overall green array by laminating technology, and the metallization of ceramic side adopts two kinds of methods to make.One is that green array is cut into single green part, makes metallization pattern at green part side tungsten slurry or molybdenum slurry, then carries out high temperature sintering and form.Another kind method be first green array by the ripe porcelain piece array of high temperature sintering, ripe porcelain array is cut into single ripe porcelain piece, at ripe porcelain piece upper side tungsten slurry or molybdenum slurry making metallization pattern, then carries out a high temperature sintering and form.
Idiographic flow is: a kind of through curtain coating, net processed, blanking and punching, metallization printing, earnestly, make ceramic member after lamination, sintering, ripe porcelain fervent, side metal, sintering and nickel plating processing technology; Another kind of after curtain coating, net processed, blanking and punching, metallization printing, fervent, lamination, side metal, sintering and nickel plating processing technology, make ceramic member.Ceramic member, through nickel plating, with metal lead wire 7, becket 2, optical coupling joint weld, then carries out surface gold-plating, makes finished product.
Claims (3)
1. a semiconductor laser ceramic package lead-in wire vertical welding structure, it is characterized in that comprising ceramic package (4), metal lead wire (7), becket (2), metal optical coupling interface (6) and blank cover, step is provided with in the cavity of described ceramic package (4), step surface is bonding table top (3), without step outside the cavity of ceramic package (4), wire bonds plane (5) is provided with at lateral surface, wire bonds plane (5) is provided with metallized area, described metallized area welds flat metal lead wire (7) vertically downward.
2. semiconductor laser ceramic package lead-in wire vertical welding structure according to claim 1, is characterized in that described ceramic package (4), metal lead wire (7), becket (2), metal optical coupling interface (6) and blank cover adopt brazing metal welding.
3. semiconductor laser ceramic package lead-in wire vertical welding structure according to claim 1, it is characterized in that described ceramic package (4) is aluminium oxide ceramics, composition is 90% ~ 96%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420501701.9U CN204030267U (en) | 2014-09-02 | 2014-09-02 | Semiconductor laser ceramic package lead-in wire vertical welding structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420501701.9U CN204030267U (en) | 2014-09-02 | 2014-09-02 | Semiconductor laser ceramic package lead-in wire vertical welding structure |
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| CN204030267U true CN204030267U (en) | 2014-12-17 |
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| CN201420501701.9U Active CN204030267U (en) | 2014-09-02 | 2014-09-02 | Semiconductor laser ceramic package lead-in wire vertical welding structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952252A (en) * | 2020-07-15 | 2020-11-17 | 青岛凯瑞电子有限公司 | Surface-mounted ceramic metal shell's high current-carrying lead structure of low resistance |
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2014
- 2014-09-02 CN CN201420501701.9U patent/CN204030267U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952252A (en) * | 2020-07-15 | 2020-11-17 | 青岛凯瑞电子有限公司 | Surface-mounted ceramic metal shell's high current-carrying lead structure of low resistance |
| CN111952252B (en) * | 2020-07-15 | 2023-03-10 | 青岛凯瑞电子有限公司 | Surface-mounted type ceramic metal shell's low resistance high current-carrying lead structure |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 050000 No. 113 Cooperative Road, Xinhua District, Shijiazhuang City, Hebei Province Patentee after: Hebei Zhongchi Electronic Technology Co., Ltd. Address before: 050000 No. 113 Cooperative Road, Xinhua District, Shijiazhuang City, Hebei Province Patentee before: HEBEI SINOPACK ELECTRONIC TECHNOLOGY CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |