CN204011402U - LDMOS microwave power device shell based on DBC technique - Google Patents
LDMOS microwave power device shell based on DBC technique Download PDFInfo
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- CN204011402U CN204011402U CN201420455623.3U CN201420455623U CN204011402U CN 204011402 U CN204011402 U CN 204011402U CN 201420455623 U CN201420455623 U CN 201420455623U CN 204011402 U CN204011402 U CN 204011402U
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Abstract
The utility model discloses a kind of LDMOS microwave power device shell based on DBC technique, relate to the encapsulation technology field of semiconductor or other solid state device.Described shell comprises metal heat sink, passes through DBC technique sintering at the ceramic side wall of metal heat sink upper surface and pass through the exit of DBC technique sintering at side wall metal upper surface, and the making material of described metal heat sink and exit is oxygen-free copper.The making material of the metal heat sink of described shell and exit is oxygen-free copper, has higher thermal conductivity, makes shell thermal resistance less, and heat dispersion is better, makes simplyr, and cost is lower.
Description
Technical field
The utility model relates to the encapsulation technology field of semiconductor or other solid state device, relates in particular to a kind of LDMOS microwave power device shell based on DBC technique.
Background technology
Microwave power device is the core devices of mobile communication base station and satellite navigation mobile terminal.Be widely used in the every field such as microwave communication system, telemetry system, radar, navigation, biomedicine, electronic countermeasures, artificial satellite, spaceship.
Microwave power LDMOS(Laterally Diffused Metal Oxide Semiconductor in recent years) device progressively replaces bipolar transistor, become the main flow of silicon microwave power device development, especially aspect broadband long pulse high duty ratio high-power applications, high-power owing to thering is less thermal resistance and being easy to output in parallel, under radio frequency continuous wave operating state, show superior heat-stability and high power conversion efficiency, microwave power LDMOS device obtains applying more and more widely in the power amplification system of P, L, S-band.
DBC(Direct Bond Copper-Direct Bonding copper) technology is a kind of a kind of technology that electric-conductivity heat-conductivity high oxygenless copper material direct sintering is made at ceramic surface, normal aluminium oxide, the aluminium nitride copper-clad base plate using is exactly a kind of composite substrate material that uses DBC technology to form at present, it has high heat conductivility, high insulation property, large current capacity, high mechanical strength and high adhesive strength power and good solder performance, and can as PCB, etch the advantages such as figure.
In prior art, LDMOS microwave power device shell primary structure is made up of ceramic side wall, heat sink and exit, general structure adopt can cut down or iron-nickel alloy as exit; Aluminium oxide ceramics does insulating barrier and forms chip installs cavity; Tungsten copper, molybdenum copper, CMC(copper molybdenum copper) etc. material as heat sink, adopt alloy to realize shell welding as scolder with eutectic weldering, this kind shell mechanism is stable, reliability is high, support size is extensive, but the thermal conductivity of above-mentioned material is lower, radiating effect is bad.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of LDMOS microwave power device shell based on DBC technique, the making material of the metal heat sink of described shell and exit is oxygen-free copper, there is higher thermal conductivity, make shell thermal resistance less, heat dispersion is better, make simplyr, cost is lower.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: a kind of LDMOS microwave power device shell based on DBC technique, it is characterized in that: described shell comprises metal heat sink, passes through DBC technique sintering at the ceramic side wall of metal heat sink upper surface and pass through the exit of DBC technique sintering at side wall metal upper surface, and the making material of described metal heat sink and exit is oxygen-free copper.
Further technical scheme is: the overall dimension of described shell is less than 7.00mm × 7.00mm.
Further technical scheme is: what described exit was relative is arranged on ceramic side wall.
The beneficial effect that adopts technique scheme to produce is: metal heat sink and terminal material that described shell uses are oxygen-free copper, oxygen-free copper and tungsten copper, molybdenum copper, CMC(copper molybdenum copper) compared with, have higher thermal conductivity, make shell thermal resistance less, heat dispersion is better.Compared with conventional shell pottery side wall, shell ceramic segment, without metallization, does not need metallize manufacture craft, nickel plating technology, needn't consider metallization and ceramic matching performance and adhesion, and manufacture craft is simpler.Because DBC technique makes shell production technology simpler, do not need metallization process, do not need to use eutectic solder, and oxygenless copper material is than tungsten copper, molybdenum copper, CMC(copper molybdenum copper) material more easily processes more cheaply, therefore uses the shell of DBC fabrication techniques to have lower cost.
Brief description of the drawings
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Fig. 1 is main TV structure schematic diagram of the present utility model;
Fig. 2 is that the utility model is looked up structural representation;
Fig. 3 is the utility model plan structure schematic diagram;
Fig. 4 is sectional structure schematic diagram of the present utility model;
Wherein: 1, metal heat sink 2, side wall metal 3, exit.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present utility model, instead of whole embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
A lot of details are set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to the utility model intension in the situation that, and therefore the utility model is not subject to the restriction of following public specific embodiment.
As Figure 1-4, a kind of LDMOS microwave power device shell based on DBC technique, described shell comprises metal heat sink 1, passes through DBC technique sintering at the ceramic side wall 2 of metal heat sink 1 upper surface and pass through the exit 3 of DBC technique sintering at side wall metal 2 upper surfaces, what described exit 3 was relative is arranged on ceramic side wall 2, and the making material of described metal heat sink 1 and exit 3 is oxygen-free copper.
In shell manufacture craft, ceramic side wall part is made and can be adopted two kinds of method preparations, and the one, can adopt conventional multi-layer ceramics co-firing technology production line, by the machine-shaping of casting belt material, rear sinter molding; Another kind method is compressing with dry powder, high temperature sintering moulding, the directly machine work moulding of oxygenless copper material that metal heat sink and exit use.Shell is made and can directly be adopted DBC technique that ceramic side wall and heat sink, exit are sintered together.
Shell adopts the production procedure of conventional multilayer co-firing aluminium oxide ceramics shell, and wherein, the manufacture craft of ceramic side wall is as follows: curtain coating-blanking and punching-moulding-sintering-aluminium oxide porcelain piece; The manufacture craft of shell is as follows: aluminium oxide porcelain piece and metal parts form finished product shell by DBC technique after gold-plated.
The LDMOS microwave power device shell that uses DBC fabrication techniques has following some advantage compared with conventional LDMOS microwave power device shell:
One, technique is simpler: compared with making with conventional shell pottery side wall, shell ceramic segment, without metallization, does not need metallize manufacture craft, nickel plating technology, needn't consider metallization and ceramic matching performance and adhesion.
Two, heat dispersion is better: the heat sink material using due to DBC technique is oxygenless copper material, oxygen-free copper and tungsten copper, molybdenum copper, CMC(copper molybdenum copper) compared with, there is higher thermal conductivity, make shell thermal resistance less, heat dispersion is better.
Three, cost is lower: because DBC technique makes shell production technology simpler, do not need metallization process, do not need to use eutectic solder, and oxygenless copper material is than tungsten copper, molybdenum copper, CMC(copper molybdenum copper) material more easily processes more cheaply, therefore uses the shell of DBC fabrication techniques to have lower cost.
The shell that uses DBC fabrication techniques because its technique is simple, superior performance, advantage that cost is low, make it be more suitable for batch production.Due to the thermal coefficient of expansion mismatch of oxygenless copper material and ceramic material, limited the extensive popularization of shell sizes, according to test, the overall dimension of this type of shell is generally less than 7.00mm × 7.00mm simultaneously.
Claims (3)
1. the LDMOS microwave power device shell based on DBC technique, it is characterized in that: described shell comprises metal heat sink (1), passes through DBC technique sintering at the ceramic side wall (2) of metal heat sink (1) upper surface and pass through the exit (3) of DBC technique sintering at side wall metal (2) upper surface, and the making material of described metal heat sink (1) and exit (3) is oxygen-free copper.
2. the LDMOS microwave power device shell based on DBC technique according to claim 1, is characterized in that: the overall dimension of described shell is less than 7.00mm × 7.00mm.
3. the LDMOS microwave power device shell based on DBC technique according to claim 1, is characterized in that: what described exit (3) was relative is arranged on ceramic side wall (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420455623.3U CN204011402U (en) | 2014-08-13 | 2014-08-13 | LDMOS microwave power device shell based on DBC technique |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420455623.3U CN204011402U (en) | 2014-08-13 | 2014-08-13 | LDMOS microwave power device shell based on DBC technique |
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| CN204011402U true CN204011402U (en) | 2014-12-10 |
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| CN201420455623.3U Active CN204011402U (en) | 2014-08-13 | 2014-08-13 | LDMOS microwave power device shell based on DBC technique |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112640200A (en) * | 2018-09-20 | 2021-04-09 | 国际商业机器公司 | Low temperature microwave filter with reduced DC capability of the Peking resistance |
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2014
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112640200A (en) * | 2018-09-20 | 2021-04-09 | 国际商业机器公司 | Low temperature microwave filter with reduced DC capability of the Peking resistance |
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Address after: 050000 No. 113 Cooperative Road, Xinhua District, Shijiazhuang City, Hebei Province Patentee after: Hebei Zhongchi Electronic Technology Co., Ltd. Address before: 050000 No. 113 Cooperative Road, Xinhua District, Shijiazhuang City, Hebei Province Patentee before: HEBEI SINOPACK ELECTRONIC TECHNOLOGY CO., LTD. |