CN203910376U - Novel thin-film resistor - Google Patents
Novel thin-film resistor Download PDFInfo
- Publication number
- CN203910376U CN203910376U CN201420281329.5U CN201420281329U CN203910376U CN 203910376 U CN203910376 U CN 203910376U CN 201420281329 U CN201420281329 U CN 201420281329U CN 203910376 U CN203910376 U CN 203910376U
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- Prior art keywords
- layer
- novel thin
- thin film
- substrate layer
- film resistance
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Abstract
The utility model discloses a novel thin-film resistor, which includes a heat dissipation metal base layer, and an insulation substrate layer arranged on the heat dissipation metal base layer, wherein an arc groove is formed in the upper surface of the insulation substrate layer; a resistive film layer is arranged inside the arc groove and the top surface of the resistive film layer is a plane; a pair of electrodes is formed in the top surface edges and the two sides of the resistive film layer; the electrodes include a top electrode and an extraction electrode; the upper surface of the top electrode and the exposed upper surface of the resistive film layer are both coated with insulation protective layers. The novel thin-film resistor has the benefits that in the novel thin-film resistor provided by the utility model, as the heat dissipation metal base layer is arranged at the lower part of the insulation substrate layer, the heat dissipation performance of the resistor is greatly optimized, and the heat stability of the thin-film resistor is bettered, namely, the electrical properties of the resistor slightly change with temperature variation; and besides, the arc groove is formed in the upper surface of the insulation substrate layer, and the resistive film layer is arranged inside the arc groove in an evaporation manner, so that the tolerance power of the resistor is improved without enlarging the resistor, and the performance of the product is optimized.
Description
Technical field
The utility model relates to a kind of resistance, is specifically related to a kind of film resistor with good thermal stability, belongs to electronic devices and components field.
Background technology
Film resistor have specific area large, can bear the many merits such as high-power, development along with emerging electronic industry, the demand gap of film resistor is increasing, and also more and more higher to the requirement of quality and performance, because film resistor inevitably produces heat in use, and the accumulation of heat all has a great impact for performance, life-span of resistance, so, the film resistor good in the urgent need to a kind of thermal diffusivity, thermal stability is excellent, to meet the demand of high-end market.
Utility model content
For solving the deficiencies in the prior art, the purpose of this utility model is to provide the film resistor of a kind of excellent heat dissipation performance, Heat stability is good.
In order to realize above-mentioned target, the utility model adopts following technical scheme:
A kind of novel thin film resistance; comprise heat radiating metal plinth course, be arranged at the dielectric substrate layer on heat radiating metal plinth course; the upper surface of described dielectric substrate layer is formed with a deep-slotted chip breaker; the end face that is provided with resistive layer and resistive layer in described deep-slotted chip breaker is plane; top edge and the both sides of described resistive layer are formed with pair of electrodes; described electrode comprises: top electrodes and extraction electrode, the upper surface of described top electrodes and exposed resistive layer upper surface are all coated with insulating protective layer.
Aforementioned heat radiating metal plinth course is made by copper or aluminium, and described dielectric substrate layer is made by pottery.
Aforementioned resistive layer is surperficial to dielectric substrate layer by tantalum nitride or nichrome evaporation.
The material of former electrodes is tantalum or nickel or copper.
Aforementioned dielectric protective layer is silicon dioxide.
The thickness in aforementioned resistive layer thickness is no more than the twice of the thickness of thinnest part.
The thickness of aforementioned resistive layer thinnest part is 5-10 micron.
The degree of depth of aforementioned deep-slotted chip breaker is greater than half of insulated substrate layer thickness.
The length of aforementioned heat radiating metal plinth course is greater than the length of dielectric substrate layer.
Usefulness of the present utility model is: film resistor of the present utility model is provided with heat radiating metal plinth course below dielectric substrate layer, greatly optimized the heat dispersion of resistance, make the thermal stability of film resistor better, the electrology characteristic of resistance varies with temperature not obvious; In addition, the upper surface of dielectric substrate layer forms a deep-slotted chip breaker, and resistive layer evaporation, in deep-slotted chip breaker, has been improved to the tolerance power of resistance on the basis that does not increase resistance volume, has optimized the performance of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of novel thin film resistance of the present utility model.
The implication of Reference numeral in figure: 1, heat radiating metal plinth course, 2, dielectric substrate layer, 21, deep-slotted chip breaker, 3, resistive layer, 4, electrode, 41, top electrodes, 42, extraction electrode, 5, insulating protective layer.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is done to concrete introduction.
Referring to Fig. 1, a kind of novel thin film resistance of the present utility model, comprise heat radiating metal plinth course 1, be arranged at the dielectric substrate layer 2 on heat radiating metal plinth course 1, the length of heat radiating metal plinth course 1 is greater than the length of dielectric substrate layer 2, preferably, heat radiating metal plinth course 1 is made by copper or aluminium, and dielectric substrate layer 2 is made by pottery.Of the present utility model one large innovation is that the upper surface of dielectric substrate layer 2 is formed with a deep-slotted chip breaker 21, resistive layer 3 evaporations in deep-slotted chip breaker 21 and its end face be plane, that is to say, the bottom surface of resistive layer 3 is arcwall face, end face is plane.So, not increasing under the prerequisite of the volume of resistance own, than the film resistor of traditional structure, it is nearly 50% that tolerant maximum power has improved, and preferred resistive layer 3 materials are tantalum nitride or nichrome.
Meanwhile, in top edge and the both sides of resistive layer 3, be formed with pair of electrodes 4, electrode 4 can be also to adopt the method for evaporation to make, and preferred electrode 4 materials are tantalum or nickel or copper, specifically comprise: top electrodes 41 and extraction electrode 42.Finally, at the upper surface of top electrodes 41 and exposed resistive layer 3 upper surfaces, be all coated with insulating protective layer 5, preferred protective layer material is silicon dioxide.
As a kind of preferred, the thickness H1 in resistive layer 3 thickness is no more than the twice of the thickness H2 of thinnest part, and the thickness of thinnest part is 5-10 micron.Further, the depth D 1 of deep-slotted chip breaker 21 is greater than half of dielectric substrate layer 2 thickness D2.
The novel thin film resistance of the present embodiment, novel structure, layers of material is selected and reasonable preparation, structure and the thickness of resistive layer 3, dielectric substrate layer 2 have been optimized simultaneously, make the heat dispersion of resistance remarkable, along with the increase of service time, the resistance fluctuating range of resistance is very little, and the thermal stability of resistance is fine.
More than show and described basic principle of the present utility model, principal character and advantage.The technical staff of the industry should understand, and above-described embodiment does not limit the utility model in any form, and all employings are equal to replaces or technical scheme that the mode of equivalent transformation obtains, all drops in protection range of the present utility model.
Claims (9)
1. a novel thin film resistance; it is characterized in that: comprise heat radiating metal plinth course, be arranged at the dielectric substrate layer on heat radiating metal plinth course; the upper surface of described dielectric substrate layer is formed with a deep-slotted chip breaker; the end face that is provided with resistive layer and resistive layer in described deep-slotted chip breaker is plane; top edge and the both sides of described resistive layer are formed with pair of electrodes; described electrode comprises: top electrodes and extraction electrode, the upper surface of described top electrodes and exposed resistive layer upper surface are all coated with insulating protective layer.
2. a kind of novel thin film resistance according to claim 1, is characterized in that: described heat radiating metal plinth course is made by copper or aluminium, and described dielectric substrate layer is made by pottery.
3. a kind of novel thin film resistance according to claim 2, is characterized in that: described resistive layer is surperficial to dielectric substrate layer by tantalum nitride or nichrome evaporation.
4. a kind of novel thin film resistance according to claim 2, is characterized in that: the material of described electrode is tantalum or nickel or copper.
5. a kind of novel thin film resistance according to claim 1, is characterized in that: described insulating protective layer is silicon dioxide.
6. according to a kind of novel thin film resistance described in claim 1-5 any one, it is characterized in that: the thickness in described resistive layer thickness is no more than the twice of the thickness of thinnest part.
7. a kind of novel thin film resistance according to claim 6, is characterized in that: the thickness of described resistive layer thinnest part is 5-10 micron.
8. a kind of novel thin film resistance according to claim 6, is characterized in that: the degree of depth of described deep-slotted chip breaker is greater than half of insulated substrate layer thickness.
9. a kind of novel thin film resistance according to claim 6, is characterized in that: the length of described heat radiating metal plinth course is greater than the length of dielectric substrate layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420281329.5U CN203910376U (en) | 2014-05-29 | 2014-05-29 | Novel thin-film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420281329.5U CN203910376U (en) | 2014-05-29 | 2014-05-29 | Novel thin-film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203910376U true CN203910376U (en) | 2014-10-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420281329.5U Expired - Fee Related CN203910376U (en) | 2014-05-29 | 2014-05-29 | Novel thin-film resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203910376U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103971868A (en) * | 2014-05-29 | 2014-08-06 | 昆山福烨电子有限公司 | Novel thin-film resistor |
| CN107750390A (en) * | 2015-06-18 | 2018-03-02 | 密克罗奇普技术公司 | Embedded Film resistor with increased mask layer |
-
2014
- 2014-05-29 CN CN201420281329.5U patent/CN203910376U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103971868A (en) * | 2014-05-29 | 2014-08-06 | 昆山福烨电子有限公司 | Novel thin-film resistor |
| CN107750390A (en) * | 2015-06-18 | 2018-03-02 | 密克罗奇普技术公司 | Embedded Film resistor with increased mask layer |
| CN107750390B (en) * | 2015-06-18 | 2022-01-25 | 密克罗奇普技术公司 | Damascene thin film resistor with increased mask layer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141029 Termination date: 20150529 |
|
| EXPY | Termination of patent right or utility model |