CN203871330U - Anti-stress image sensing device - Google Patents
Anti-stress image sensing device Download PDFInfo
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- CN203871330U CN203871330U CN201420256712.5U CN201420256712U CN203871330U CN 203871330 U CN203871330 U CN 203871330U CN 201420256712 U CN201420256712 U CN 201420256712U CN 203871330 U CN203871330 U CN 203871330U
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Abstract
The utility model discloses an anti-stress image sensing device comprising an image sensing chip and a transparent cover plate. A supporting cofferdam and the image sensing chip are connected together in an adhesive manner by a glue layer. The peripheral edge of the lower surface of the image sensing chip is provided with a plurality of blind holes. The lower surface of the image sensing chip and the side surfaces of the blind holes are provided with passivation layers, and the bottom parts of the blind holes are provided with pin bonding pads of the image sensing chip. The metal conductive pattern layers, which are electrically connected with the pin bonding pads, are disposed on the surfaces of the passivation layers, which are opposite to the image sensing chip, and in the blind holes. A soldermask layer is disposed on the surfaces of the metal conductive pattern layers, which are opposite to the passivation layers. The soldermask layer is provided with a plurality of through holes, and a solder ball is electrically connected with the metal conductive pattern layers by the through holes. Each of the metal conductive pattern layers is formed by overlapping a titanium layer, a copper layer, a nickel layer, and a palladium layer together sequentially, and the titanium layers are contacted with the passivation layers. The anti-stress image sensing device is advantageous in that the stress deformation of the metal on the two sides of the blind holes generated in the hot-and-cool environment can be effectively buffered, and the products can be prevented from losing efficacy in the severe environment.
Description
Technical field
The utility model relates to a kind of anti-stress image senser element, belongs to semiconductor packaging field.
Background technology
Wafer refers to the silicon wafer that Si semiconductor production of integrated circuits is used, because it is shaped as circle, therefore be called wafer; On silicon wafer, can manufacture various circuit component structures, have the IC of certain electric sexual function product and become.Mainly there is following technical problem in existing wafer stage chip encapsulating structure:
(1) the metal yield of filling in existing blind hole on wafer has certain limitation, stress is large, and reliability level is low, in exposed environments, very easily oxidized corrosion, cause product failure, stable chemical nature is poor, and along with wafer-level packaging through hole silicon interconnect technology is towards the future development of high-aspect-ratio, method meets the requirement of the continuous coverage hole inwall of deep hole inner metal layer of high-aspect-ratio, secondly, harm, has pollution to environment.So need to find one environmentally friendly, the coat of metal that can match in excellence or beauty with Gold plated Layer in function substitutes gold-plated;
(2) in existing encapsulating structure, edge, cofferdam and induction chip photosensitive area all need to retain certain distance, prevent that, in the process of glass plastic roll, pressing, colloid overflows to induction chip photosensitive area, affects image quality.Due to the restriction of the glue that overflows, the width in cofferdam is pure in larger limitation, directly has influence on the reliability of CIS product, easily occurs the problem of layering.
Summary of the invention
The utility model object is to provide a kind of anti-stress image senser element, this anti-stress image senser element effectively cushions the stress deformation that blind hole both sides metal occurs under hot-cool environment, prevent that product lost efficacy under adverse circumstances, be difficult for oxidized corrosion, can meet the requirement of the continuous coverage hole inwall of deep hole inner metal layer of high-aspect-ratio.
For achieving the above object, the technical solution adopted in the utility model is: a kind of anti-stress image senser element, comprise image sensor chip, transparent cover plate, the upper surface of this image sensor chip has photosensitive area, thereby between described transparent cover plate edge and the top surface edge of image sensor chip, there is the cofferdam of support and form cavity between transparent cover plate and image sensor chip, this supports between cofferdam and image sensor chip bonding by glue layer, the edge area distribution of image sensor chip lower surface has several blind holes, described image sensor chip lower surface and blind hole side surface have passivation layer, this blind hole bottom has the pin pad of image sensor chip, in the surface that described passivation layer is opposing with image sensor chip and blind hole, have be electrically connected with pin pad there is metallic conduction graph layer, one welding resisting layer is positioned at metallic conduction graph layer and the opposing surface of passivation layer, on this welding resisting layer, have several through holes, one soldered ball is electrically connected with metallic conduction graph layer by described through hole, described metallic conduction graph layer is by titanium layer, copper layer, nickel dam and palladium layer stack composition successively, described titanium layer contacts with passivation layer.
In technique scheme, further improved plan is as follows:
In such scheme, described blind hole center has anti-welding column.
Because technique scheme is used, the utility model compared with prior art has following advantages and effect:
The anti-stress image senser element of the utility model, in the surface that its passivation layer is opposing with image sensor chip and blind hole, there is the metallic conduction graph layer being electrically connected with pin pad, this metallic conduction graph layer is stacked and forms successively by titanium layer, copper layer, nickel dam and palladium layer, described titanium layer contacts with passivation layer, has alleviated stress, and reliability is high, in exposed environments, be difficult for oxidized corrosion, stable chemical nature is good, and can meet the requirement of the continuous coverage hole inwall of deep hole inner metal layer of high-aspect-ratio; Secondly, blind hole center has anti-welding column and effectively cushions the stress deformation that blind hole both sides metal occurs under hot-cool environment, prevents that product lost efficacy under adverse circumstances.
Brief description of the drawings
Accompanying drawing 1 is the anti-stress image senser element of the utility model structural representation;
Accompanying drawing 2 is partial structurtes schematic diagram in the anti-stress image senser element of the utility model.
In above accompanying drawing: 1, image sensor chip; 2, transparent cover plate; 3, photosensitive area; 4, support cofferdam; 5, glue layer; 6, blind hole; 7, passivation layer; 8, pin pad; 9, metallic conduction graph layer; 10, welding resisting layer; 11, through hole; 12, soldered ball; 13, cavity; 14, titanium layer; 15, copper layer; 16, nickel dam; 17, palladium layer; 18, anti-welding column.
Embodiment
Below in conjunction with embodiment, the utility model is further described:
Embodiment: a kind of anti-stress image senser element, comprise image sensor chip 1, transparent cover plate 2, the upper surface of this image sensor chip 1 has photosensitive area 3, thereby between described transparent cover plate 2 edges and the top surface edge of image sensor chip 1, there is the cofferdam 4 of support and form cavity 13 between transparent cover plate 2 and image sensor chip 1, this supports between cofferdam 4 and image sensor chip 1 bonding by glue layer 5, the edge area distribution of image sensor chip 1 lower surface has several blind holes 6, described image sensor chip 1 lower surface and blind hole 6 side surfaces have passivation layer 7, these blind hole 6 bottoms have the pin pad 8 of image sensor chip 1, in the surface that described passivation layer 7 is opposing with image sensor chip 1 and blind hole 6, have be electrically connected with pin pad 8 there is metallic conduction graph layer 9, one welding resisting layer 10 is positioned at the opposing surface of metallic conduction graph layer 9 and passivation layer 7, on this welding resisting layer 10, have several through holes 11, one soldered ball 12 is electrically connected with metallic conduction graph layer 9 by described through hole 11, described metallic conduction graph layer 9 is by titanium layer 14, copper layer 15, nickel dam 16 and palladium layer 17 stack composition successively, described titanium layer 17 contacts with passivation layer 7.
Above-mentioned blind hole 6 centers have anti-welding column 18.
While adopting above-mentioned image sensing device, in the surface that its passivation layer is opposing with image sensor chip and blind hole, there is the metallic conduction graph layer being electrically connected with pin pad, this metallic conduction graph layer is stacked and forms successively by titanium layer, copper layer, nickel dam and palladium layer, described titanium layer contacts with passivation layer, has alleviated stress, and reliability is high, in exposed environments, be difficult for oxidized corrosion, stable chemical nature is good, and can meet the requirement of the continuous coverage hole inwall of deep hole inner metal layer of high-aspect-ratio; Secondly, blind hole center has anti-welding column and effectively cushions the stress deformation that blind hole both sides metal occurs under hot-cool environment, prevents that product lost efficacy under adverse circumstances.
Above-described embodiment is only explanation technical conceive of the present utility model and feature, and its object is to allow person skilled in the art can understand content of the present utility model and implement according to this, can not limit protection range of the present utility model with this.All equivalences of doing according to the utility model Spirit Essence change or modify, within all should being encompassed in protection range of the present utility model.
Claims (2)
1. an anti-stress image senser element, it is characterized in that: comprise image sensor chip (1), transparent cover plate (2), the upper surface of this image sensor chip (1) has photosensitive area (3), between the top surface edge of described transparent cover plate (2) edge and image sensor chip (1), there is support cofferdam (4) thus between transparent cover plate (2) and image sensor chip (1), form cavity (13), this supports between cofferdam (4) and image sensor chip (1) bonding by glue layer (5), the edge area distribution of image sensor chip (1) lower surface has several blind holes (6), described image sensor chip (1) lower surface and blind hole (6) side surface have passivation layer (7), this blind hole (6) bottom has the pin pad (8) of image sensor chip (1), in the surface that described passivation layer (7) is opposing with image sensor chip (1) and blind hole (6), have be electrically connected with pin pad (8) there is metallic conduction graph layer (9), one welding resisting layer (10) is positioned at the opposing surface of metallic conduction graph layer (9) and passivation layer (7), on this welding resisting layer (10), have several through holes (11), one soldered ball (12) is electrically connected with metallic conduction graph layer (9) by described through hole (11), described metallic conduction graph layer (9) is by titanium layer (14), copper layer (15), nickel dam (16) and palladium layer (17) stack composition successively, described titanium layer (17) contacts with passivation layer (7).
2. anti-stress image senser element according to claim 1, is characterized in that: described blind hole (6) center has anti-welding column (18).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420256712.5U CN203871330U (en) | 2014-05-20 | 2014-05-20 | Anti-stress image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420256712.5U CN203871330U (en) | 2014-05-20 | 2014-05-20 | Anti-stress image sensing device |
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| Publication Number | Publication Date |
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| CN203871330U true CN203871330U (en) | 2014-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420256712.5U Active CN203871330U (en) | 2014-05-20 | 2014-05-20 | Anti-stress image sensing device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659048A (en) * | 2015-02-15 | 2015-05-27 | 苏州科阳光电科技有限公司 | Manufacturing process of image sensor |
| CN111650787A (en) * | 2020-06-11 | 2020-09-11 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
-
2014
- 2014-05-20 CN CN201420256712.5U patent/CN203871330U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659048A (en) * | 2015-02-15 | 2015-05-27 | 苏州科阳光电科技有限公司 | Manufacturing process of image sensor |
| CN111650787A (en) * | 2020-06-11 | 2020-09-11 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee after: Suzhou Keyang Semiconductor Co., Ltd Address before: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee before: SUZHOU KEYANG PHOTOELECTRIC TECHNOLOGY CO., LTD. |