CN203871331U - Packaging structure of high-reliability optical sensing module - Google Patents
Packaging structure of high-reliability optical sensing module Download PDFInfo
- Publication number
- CN203871331U CN203871331U CN201420256713.XU CN201420256713U CN203871331U CN 203871331 U CN203871331 U CN 203871331U CN 201420256713 U CN201420256713 U CN 201420256713U CN 203871331 U CN203871331 U CN 203871331U
- Authority
- CN
- China
- Prior art keywords
- layer
- image sensor
- sensor chip
- cofferdam
- cover plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004806 packaging method and process Methods 0.000 title abstract description 6
- 230000003287 optical effect Effects 0.000 title abstract 3
- 238000002161 passivation Methods 0.000 claims abstract description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010936 titanium Substances 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 239000010949 copper Substances 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 239000003292 glue Substances 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000002184 metal Substances 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 5
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003796 beauty Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000036299 sexual function Effects 0.000 description 1
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- Solid State Image Pick-Up Elements (AREA)
Abstract
The utility model discloses a packaging structure of a high-reliability optical sensing module comprising an image sensing chip and a transparent cover plate. A metal conductive pattern layer, which is electrically connected with a pin bonding pad, is disposed on a surface of a passivation layer, which is opposite to the image sensing chip, and in blind holes. A soldermask layer is provided with a plurality of through holes. A solder ball is electrically connected with the metal conductive pattern layer by the through holes. A supporting cofferdam is constituted by a first supporting cofferdam layer and a second supporting cofferdam layer, which are in an up-down overlapped arrangement. The first supporting cofferdam layer is contacted with the transparent cover plate, and the second supporting cofferdam layer is contacted with the image sensing chip. The inner side surface of the second supporting cofferdam layer is provided with a plurality of gaps, which are in a continuous arrangement. The metal conductive pattern layer is formed by overlapping a titanium layer, a copper layer, a nickel layer, and a palladium layer together sequentially. The packaging structure of the high-reliability optical sensing module is advantageous in that the stress can be relieved, and the reliability is high; the packaging structure is not easy to oxidate and corrode when being exposed in the environment, and the chemical property is stable;the packaging structure can be used to satisfy the requirement that the inner wall of the deep hole can be continuously covered by the metal layer in the deep hole having the high aspect ratio.
Description
Technical field
The utility model relates to a kind of encapsulating structure of high reliability light sensing module, belongs to technical field of semiconductors.
Background technology
Light sensing module refers to the silicon wafer that Si semiconductor production of integrated circuits is used, because it is shaped as circle, therefore be called wafer; On silicon wafer, can manufacture various circuit component structures, have the IC of certain electric sexual function product and become.Mainly there is following technical problem in existing smooth sensing module encapsulating structure:
(1) the metal yield of filling in the blind hole on the existing wafer having light sensing module has certain limitation, stress is large, and reliability level is low, in exposed environments, very easily oxidized corrosion, cause product failure, stable chemical nature is poor, and along with wafer-level packaging through hole silicon interconnect technology is towards the future development of high-aspect-ratio, method meets the requirement of the continuous coverage hole inwall of deep hole inner metal layer of high-aspect-ratio, secondly, harm, has pollution to environment.So need to find one environmentally friendly, the coat of metal that can match in excellence or beauty with Gold plated Layer in function substitutes gold-plated;
(2) in existing encapsulating structure, edge, cofferdam and induction chip photosensitive area all need to retain certain distance, prevent that, in the process of glass plastic roll, pressing, colloid overflows to induction chip photosensitive area, affects image quality.Due to the restriction of the glue that overflows, the width in cofferdam is pure in larger limitation, directly has influence on the reliability of CIS product, easily occurs the problem of layering.
Summary of the invention
The utility model object is to provide a kind of encapsulating structure of high reliability light sensing module, and this encapsulating structure has been alleviated stress, and reliability is high, in exposed environments, be difficult for oxidized corrosion, stable chemical nature is good, and can meet the requirement of the continuous coverage hole inwall of deep hole inner metal layer of high-aspect-ratio.
For achieving the above object, the technical solution adopted in the utility model is: a kind of encapsulating structure of high reliability light sensing module, comprise image sensor chip, transparent cover plate, the upper surface of this image sensor chip has photosensitive area, thereby between described transparent cover plate edge and the top surface edge of image sensor chip, there is the cofferdam of support and form cavity between transparent cover plate and image sensor chip, this supports between cofferdam and image sensor chip bonding by glue layer, the edge area distribution of image sensor chip lower surface has several blind holes, described image sensor chip lower surface and blind hole side surface have passivation layer, this blind hole bottom has the pin pad of image sensor chip, in the surface that described passivation layer is opposing with image sensor chip and blind hole, have be electrically connected with pin pad there is metallic conduction graph layer, one welding resisting layer is positioned at metallic conduction graph layer and the opposing surface of passivation layer, on this welding resisting layer, have several through holes, one soldered ball is electrically connected with metallic conduction graph layer by described through hole, described support cofferdam is supported cofferdam layer by the first support cofferdam layer and second stacking up and down and is formed, this the first support cofferdam layer contacts with transparent cover plate, this the second support cofferdam layer contacts with image sensor chip, described second supports several continuously arranged breach of cofferdam layer medial surface, described metallic conduction graph layer is stacked and forms successively by titanium layer, copper layer, nickel dam and palladium layer, and described titanium layer contacts with passivation layer.
In technique scheme, further improved plan is as follows:
In such scheme, described blind hole center has anti-welding column.
Because technique scheme is used, the utility model compared with prior art has following advantages and effect:
1. the encapsulating structure of the utility model high reliability light sensing module, in the surface that its passivation layer is opposing with image sensor chip and blind hole, there is the metallic conduction graph layer being electrically connected with pin pad, metallic conduction graph layer is stacked and forms successively by titanium layer, copper layer, nickel dam and palladium layer, described titanium layer contacts with passivation layer, alleviate stress, reliability is high, in exposed environments, be difficult for oxidized corrosion, stable chemical nature is good, and can meet the requirement of the continuous coverage hole inwall of deep hole inner metal layer of high-aspect-ratio.
2. the encapsulating structure of the utility model high reliability light sensing module, it supports cofferdam and is made up of the first support cofferdam layer stacking up and down and the second support cofferdam layer, second supports cofferdam layer contacts with image sensor chip, second supports several continuously arranged breach of cofferdam layer medial surface, the the first support cofferdam layer contacting with transparent cover plate is taked smooth design, glue is in the process of bonding, gap portions can effectively be assembled the glue overflowing, prevent glue diffusion, simultaneously with the cofferdam part of glass wrong, can ensure original width, do not reducing under the prerequisite that supports cofferdam width guarantor image sensing device encapsulation adhesion, mobile part gathers in breach, prevent glue diffusion, reliability increases and has further reduced device volume simultaneously.
Brief description of the drawings
Accompanying drawing 1 is the encapsulating structure structural representation of the utility model high reliability light sensing module;
In the encapsulating structure that accompanying drawing 2 is the utility model high reliability light sensing module, support cofferdam structure schematic diagram;
Accompanying drawing 3 is the encapsulating structure partial structurtes schematic diagram of the utility model high reliability light sensing module.
In above accompanying drawing: 1, image sensor chip; 2, transparent cover plate; 3, photosensitive area; 4, support cofferdam; 41, first support cofferdam layer; 42, second support cofferdam layer; 5, glue layer; 6, blind hole; 7, passivation layer; 8, pin pad; 9, metallic conduction graph layer; 10, welding resisting layer; 11, through hole; 12, soldered ball; 13, cavity; 14, breach; 15, titanium layer; 16, copper layer; 17, nickel dam; 18, palladium layer.
Embodiment
Below in conjunction with embodiment, the utility model is further described:
Embodiment: a kind of encapsulating structure of high reliability light sensing module, comprise image sensor chip 1, transparent cover plate 2, the upper surface of this image sensor chip 1 has photosensitive area 3, thereby between described transparent cover plate 2 edges and the top surface edge of image sensor chip 1, there is the cofferdam 4 of support and form cavity 13 between transparent cover plate 2 and image sensor chip 1, this supports between cofferdam 4 and image sensor chip 1 bonding by glue layer 5, the edge area distribution of image sensor chip 1 lower surface has several blind holes 6, described image sensor chip 1 lower surface and blind hole 6 side surfaces have passivation layer 7, these blind hole 6 bottoms have the pin pad 8 of image sensor chip 1, in the surface that described passivation layer 7 is opposing with image sensor chip 1 and blind hole 6, there is the metallic conduction graph layer 9 being electrically connected with pin pad 8, one welding resisting layer 10 is positioned at the opposing surface of metallic conduction graph layer 9 and passivation layer 7, on this welding resisting layer 10, have several through holes 11, one soldered ball 12 is electrically connected with metallic conduction graph layer 9 by described through hole 11, described support cofferdam 4 is supported cofferdam layer 42 by the first support cofferdam layer 41 and second stacking up and down and is formed, this the first support cofferdam layer 41 contacts with transparent cover plate 2, this the second support cofferdam layer 42 contacts with image sensor chip 1, described second supports several continuously arranged breach 14 of cofferdam layer 42 medial surfaces, described metallic conduction graph layer 9 is stacked and forms successively by titanium layer 15, copper layer 16, nickel dam 17 and palladium layer 18, and described titanium layer 17 contacts with passivation layer 7.
Above-mentioned blind hole 6 centers have anti-welding column 21.
While adopting the encapsulating structure of above-mentioned high reliability light sensing module, it has alleviated stress, reliability is high, in exposed environments, be difficult for oxidized corrosion, stable chemical nature is good, and can meet the requirement of the continuous coverage hole inwall of deep hole inner metal layer of high-aspect-ratio, it is not reducing under the prerequisite that supports cofferdam width guarantor image sensing device encapsulation adhesion, in the process of glue layer at bonding between support cofferdam and image sensor chip, mobile part gathers in shrinkage pool, has prevented glue diffusion, and reliability increases and further reduced device volume simultaneously.
Above-described embodiment is only explanation technical conceive of the present utility model and feature, and its object is to allow person skilled in the art can understand content of the present utility model and implement according to this, can not limit protection range of the present utility model with this.All equivalences of doing according to the utility model Spirit Essence change or modify, within all should being encompassed in protection range of the present utility model.
Claims (2)
1. the encapsulating structure of a high reliability light sensing module, it is characterized in that: comprise image sensor chip (1), transparent cover plate (2), the upper surface of this image sensor chip (1) has photosensitive area (3), between the top surface edge of described transparent cover plate (2) edge and image sensor chip (1), there is support cofferdam (4) thus between transparent cover plate (2) and image sensor chip (1), form cavity (13), this supports between cofferdam (4) and image sensor chip (1) bonding by glue layer (5), the edge area distribution of image sensor chip (1) lower surface has several blind holes (6), described image sensor chip (1) lower surface and blind hole (6) side surface have passivation layer (7), this blind hole (6) bottom has the pin pad (8) of image sensor chip (1), in the surface that described passivation layer (7) is opposing with image sensor chip (1) and blind hole (6), there is the metallic conduction graph layer (9) being electrically connected with pin pad (8), one welding resisting layer (10) is positioned at the opposing surface of metallic conduction graph layer (9) and passivation layer (7), on this welding resisting layer (10), have several through holes (11), one soldered ball (12) is electrically connected with metallic conduction graph layer (9) by described through hole (11), described support cofferdam (4) is supported cofferdam layer (42) by the first support cofferdam layer (41) and second stacking up and down and is formed, this first support cofferdam layer (41) contacts with transparent cover plate (2), this second support cofferdam layer (42) contacts with image sensor chip (1), described second supports several continuously arranged breach (14) of cofferdam layer (42) medial surface, described metallic conduction graph layer (9) is stacked and forms successively by titanium layer (15), copper layer (16), nickel dam (17) and palladium layer (18), and described titanium layer (17) contacts with passivation layer (7).
2. the encapsulating structure of high reliability light sensing module according to claim 1, is characterized in that: described blind hole (6) center has anti-welding column (21).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420256713.XU CN203871331U (en) | 2014-05-20 | 2014-05-20 | Packaging structure of high-reliability optical sensing module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420256713.XU CN203871331U (en) | 2014-05-20 | 2014-05-20 | Packaging structure of high-reliability optical sensing module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203871331U true CN203871331U (en) | 2014-10-08 |
Family
ID=51652256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420256713.XU Expired - Lifetime CN203871331U (en) | 2014-05-20 | 2014-05-20 | Packaging structure of high-reliability optical sensing module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203871331U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112756019A (en) * | 2020-12-29 | 2021-05-07 | 苏州科阳半导体有限公司 | Packaging structure and packaging method of fluid detection chip |
-
2014
- 2014-05-20 CN CN201420256713.XU patent/CN203871331U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112756019A (en) * | 2020-12-29 | 2021-05-07 | 苏州科阳半导体有限公司 | Packaging structure and packaging method of fluid detection chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee after: Suzhou Keyang Semiconductor Co.,Ltd. Address before: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee before: SUZHOU KEYANG PHOTOELECTRIC SCIENCE & TECHNOLOGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141008 |