CN203850326U - Nonpolar blue LED epitaxial wafer based on LAO substrate - Google Patents
Nonpolar blue LED epitaxial wafer based on LAO substrate Download PDFInfo
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- CN203850326U CN203850326U CN201420135881.3U CN201420135881U CN203850326U CN 203850326 U CN203850326 U CN 203850326U CN 201420135881 U CN201420135881 U CN 201420135881U CN 203850326 U CN203850326 U CN 203850326U
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- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 7
- 241001025261 Neoraja caerulea Species 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000001194 electroluminescence spectrum Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000103 photoluminescence spectrum Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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Abstract
The utility model discloses a nonpolar blue LED epitaxial wafer based on an LAO substrate, which comprises a substrate, wherein the substrate is the LAO substrate. A buffer layer, a first non-doped layer, a first doped layer, a quantum well layer, an electron barrier layer and a second doped layer are successively arranged on the LAO substrate. The buffer layer is a nonpolar m-surface GaN buffer layer. The first non-doped layer is a nonpolar non-doped u-GaN layer. The first doped layer is a nonpolar n type doped GaN film. The quantum well layer is a nonpolar InGaN/GaN quantum well layer. The electronic barrier layer is a nonpolar m-surface AlGaN electron barrier layer. The second doped layer is a nonpolar p type doped GaN film. The nonpolar blue LED epitaxial wafer based on the LAO substrate according to the utility model has advantages of: low defect density, high crystallization quality, high light emitting performance and low preparation cost.
Description
Technical field
The utility model relates to a kind of LED epitaxial wafer, relates in particular to a kind of nonpolar blue-ray LED epitaxial wafer based on LAO substrate.
Background technology
LED blue light epitaxial wafer substrate is mainly sapphire at present.There are two severe problems in the LED technology based on Sapphire Substrate.First, the mismatch ratio of sapphire and GaN lattice is up to 17%, and so high lattice mismatch makes the LED epitaxial wafer on sapphire have very high defect concentration, has greatly affected the luminous efficiency of LED chip.Secondly, Sapphire Substrate price is very expensive, makes nitride LED production cost very high.
The not high enough another one main cause of luminous efficiency of LED chip is because now widely used GaN base LED has polarity.Manufacturing the ideal material of efficient LED device is at present GaN.GaN is Patterns for Close-Packed Hexagonal Crystal structure, and its crystal face is divided into polar surface c face [(0001) face] and non-polar plane a face [(11-20) face] and m face [(1-100) face].At present, GaN base LED mostly the polar surface based on GaN build and to form.On polar surface GaN, the barycenter of Ga atom set and N atom set does not overlap, thereby formation electric dipole, produce spontaneous polarization field and piezoelectric polarization fields, and then cause quantum constraint Stark effect (Quantum-confined Starker Effect, QCSE), make electronics separated with hole, the radiation recombination efficiency of charge carrier reduces, and finally affects the luminous efficiency of LED, and causes the unstable of LED emission wavelength.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of nonpolar blue-ray LED epitaxial wafer based on LAO substrate, has that defect concentration is low, crystalline quality good, the advantage of good luminous performance, and preparation cost is cheap.
The utility model is to solve the problems of the technologies described above the technical scheme adopting to be to provide a kind of nonpolar blue-ray LED epitaxial wafer based on LAO substrate, comprise substrate, wherein, described substrate is LAO substrate, is disposed with resilient coating, the first non-doped layer, the first doped layer, quantum well layer, electronic barrier layer and the second doped layer on described LAO substrate.
The above-mentioned nonpolar blue-ray LED epitaxial wafer based on LAO substrate, wherein, described resilient coating is non-polar m-surface GaN resilient coating, described the first non-doped layer is nonpolar non-doping u-GaN layer, described the first doped layer is nonpolar N-shaped Doped GaN film, described quantum well layer is nonpolar InGaN/GaN quantum well layer, and described electronic barrier layer is non-polar m face AlGaN electronic barrier layer, and described the second doped layer is nonpolar p-type Doped GaN film.
The utility model contrast prior art has following beneficial effect: the nonpolar blue-ray LED epitaxial wafer based on LAO substrate that the utility model provides, by adopting LAO substrate, and on LAO substrate, set gradually resilient coating, the first non-doped layer, the first doped layer, quantum well layer, electronic barrier layer and the second doped layer, have that defect concentration is low, crystalline quality good, the advantage of good luminous performance, and preparation cost is cheap.
Accompanying drawing explanation
Fig. 1 is the nonpolar blue-ray LED epitaxial slice structure schematic diagram of the utility model based on LAO substrate;
Fig. 2 is the preparation facilities structural representation of the nonpolar blue-ray LED epitaxial wafer for LAO substrate of the present utility model;
Fig. 3 is the nonpolar blue-ray LED epitaxial wafer preparation flow schematic diagram of the utility model based on LAO substrate;
Fig. 4 is the XRD resolution chart that the utility model is grown in the nonpolar blue-ray LED epitaxial wafer on LAO substrate (001) face;
What Fig. 5 was that the utility model is grown in non-polar m face blue-ray LED epitaxial wafer on LAO substrate is PL spectrum resolution chart under room temperature in temperature;
What Fig. 6 was that the utility model is grown in non-polar m face blue-ray LED epitaxial wafer on LAO substrate is EL spectrum resolution chart under room temperature in temperature.
Embodiment
Below in conjunction with drawings and Examples, the utility model will be further described.
Fig. 1 is the nonpolar blue-ray LED epitaxial slice structure schematic diagram of the utility model based on LAO substrate.
Refer to Fig. 1, the nonpolar blue-ray LED epitaxial wafer based on LAO substrate that the utility model provides, comprise substrate, wherein, described substrate is LAO substrate, is disposed with resilient coating, the first non-doped layer, the first doped layer, quantum well layer, electronic barrier layer and the second doped layer on described LAO substrate.The nonpolar blue-ray LED epitaxial wafer being grown on LAO substrate of the present utility model, described LAO substrate claims again lanthanum aluminum oxide substrate, by La, Al, O element forms, and molecular formula is LaAlxOy.As shown in Figure 1, the nonpolar blue-ray LED epitaxial wafer that the utility model provides comprises LAO substrate 10, non-polar m-surface GaN resilient coating 11, nonpolar non-doping u-GaN layer 12, nonpolar N-shaped Doped GaN film 13, nonpolar InGaN/GaN quantum well layer 14, non-polar m face AlGaN electronic barrier layer 15, the nonpolar p-type Doped GaN film 16 being arranged in order from the bottom to top.
Fig. 2 is the preparation facilities structural representation of the nonpolar blue-ray LED epitaxial wafer for LAO substrate of the present utility model.
Please continue referring to Fig. 2,20,21 are respectively NH3 and SiH4, and its effect is to provide N and Si; The 22nd, H2, its effect is as carrier gas, carries Cp2Mg, TMGa, TMIn; 23,24,25 is respectively Cp2Mg, TMGa, TMIn, and its effect is to provide LED grow required Mg, Ga, In; The 26th, manipulator, for delivery of substrate and sample; The 27th, radio-frequency induction heater, is used for to substrate heating and temperature control; The 28th, graphite plate, for carrying LAO substrate; The 29th, reaction chamber, various reacting gas generation chemical reactions generate the cavity of LED; The 30th, shower nozzle, reacting gas is evenly ejected into the device of substrate surface after fully mixing; The 31st, radio frequency plasma source apparatus, for providing active N; 32-40 is valve, for controlling the feed status of the gas of various pipelines.MFC is flow controller, for controlling the flow of gas, thereby meets the demand of growing.
Fig. 3 is the nonpolar blue-ray LED epitaxial wafer preparation flow schematic diagram of the utility model based on LAO substrate.
Please continue referring to Fig. 3, the preparation method who is grown in the nonpolar blue-ray LED epitaxial wafer on LAO substrate of the present utility model, specifically comprises the following steps:
Step S1: adopt LAO substrate, choose crystal orientation, and LAO substrate is carried out to surface cleaning processing;
Step S2: LAO substrate is carried out to annealing in process, and form AlN inculating crystal layer at LAO substrate surface;
Step S3: adopt metallo-organic compound chemical vapor deposition to form successively non-polar m-surface GaN resilient coating, nonpolar non-doping u-GaN layer, nonpolar N-shaped Doped GaN film, nonpolar InGaN/GaN quantum well, non-polar m face AlGaN electronic barrier layer and nonpolar p-type Doped GaN film on LAO substrate.
Provide a specific embodiment below, making step and process conditions are as follows:
(1) adopt LAO substrate, choose crystal orientation;
(2) substrate is carried out to surface cleaning processing;
(3) substrate is carried out to annealing in process: by substrate at 900-1200 ℃ after high-temperature baking 1～4h air cooling to room temperature, then pass into N2 plasma insulation 30～80 minutes, at substrate surface, form AlN inculating crystal layer, for the growth of GaN film provides template, the flow of N plasma is 40～90sccm, and the radio-frequency power that produces plasma nitrogen is 200～500W;
(4) adopt radio frequency plasma (RF) to strengthen MOCVD (MOCVD) growing nonpolar m face GaN resilient coating, process conditions are: underlayer temperature is reduced to 400～800 ℃, pass into TMGa and N plasma, chamber pressure is that the flow of 400～700torr, N plasma is 40～90sccm, the radio-frequency power that produces plasma nitrogen is 200～700W, and V/III ratio is 800～1200;
(5) adopt the non-doping of MOCVD technique growing nonpolar u-GaN layer, process conditions are: underlayer temperature is 1000～1500 ℃, passes into TMGa, and chamber pressure is 400torr, and V/III ratio is 180;
(6) adopt MOCVD technique growing nonpolar N-shaped Doped GaN film, process conditions are: underlayer temperature is 1000～1300 ℃, pass into TMGa and SiH4, and keeping the flow of SiH4 is 60～100sccm, and chamber pressure is 240torr, and V/III ratio is 160; Doping electron concentration 1.0 * 10
17～5.3 * 10
19cm-3;
(7) adopt MOCVD technique growing nonpolar InGaN/GaN quantum well, process conditions are: form and build layer, underlayer temperature is 750～950 ℃, closes H2, passes into TEGa and ammonia, and chamber pressure is 200torr, and V/III ratio is 986, and thickness is 10～15nm; Form trap layer, underlayer temperature is 750～950 ℃, closes H2, passes into TEGa, TMIn and ammonia, and chamber pressure is 200torr, and V/III ratio is 1439, and thickness is 2～4nm;
(8) adopt MOCVD technique growing nonpolar m face AlGaN electronic barrier layer, process conditions are: underlayer temperature rises to 900～1050 ℃, pass into TMGa and ammonia, and chamber pressure is 200torr, and V/III ratio is 986;
(9) adopt MOCVD technique growing nonpolar p-type Doped GaN film, process conditions are: underlayer temperature is 900～1100 ℃, pass into TMGa, CP2Mg and ammonia, and keeping the flow of CP2Mg is 250～450sccm, chamber pressure is 200torr, and V/III ratio is 1000～1250; Doping hole concentration 1.0 * 10
16-2.2 * 10
18cm-3.
Fig. 4 is the XRD resolution chart that the utility model is grown in the nonpolar blue-ray LED epitaxial wafer on LAO substrate (001) face.
As seen from Figure 4, the utility model test obtains half-peak breadth (FWHM) value of LED epitaxial wafer * ray swing curve, its half-peak breadth (FWHM) value is lower than 0.1 °, show no matter nonpolar blue-ray LED epitaxial wafer prepared by the utility model is in defect concentration or at crystalline quality, all has extraordinary performance.
What Fig. 5 was that the utility model is grown in non-polar m face blue-ray LED epitaxial wafer on LAO substrate is PL spectrum resolution chart under room temperature in temperature.
As seen from Figure 5, the utility model temperature be under 293K PL spectrum test to obtain glow peak wavelength be 460nm, half-peak breadth is 23nm.This nonpolar GaN film that shows prepared by the utility model has extraordinary performance on optical properties.
What Fig. 6 was that the utility model is grown in non-polar m face blue-ray LED epitaxial wafer on LAO substrate is EL spectrum resolution chart under room temperature in temperature.
As seen from Figure 6, temperature be under 293K EL spectrum test to obtain glow peak wavelength be 461nm, half-peak breadth is 22nm, power output is 7.8mw@20mA.Show that nonpolar GaN film prepared by the utility model has extraordinary performance on electrical properties.
In sum, the nonpolar blue-ray LED epitaxial wafer based on LAO substrate that the utility model provides, by adopting LAO substrate, and on LAO substrate, set gradually non-polar m-surface GaN resilient coating, nonpolar non-Doped GaN layer, nonpolar N-shaped Doped GaN film, nonpolar InGaN/GaN quantum well layer, non-polar m face AlGaN electronic barrier layer and nonpolar p-type Doped GaN film.Compared with prior art, the utlity model has growth technique simple, the advantage that preparation cost is cheap, and the nonpolar blue-ray LED epitaxial wafer defect concentration of preparation is low, crystalline quality good, electricity, good in optical property.
Although the utility model discloses as above with preferred embodiment; so it is not in order to limit the utility model; any those skilled in the art; within not departing from spirit and scope of the present utility model; when doing a little modification and perfect, therefore protection range of the present utility model is worked as with being as the criterion that claims were defined.
Claims (2)
1. the nonpolar blue-ray LED epitaxial wafer based on LAO substrate, comprise substrate, it is characterized in that, described substrate is LAO substrate, is disposed with resilient coating, the first non-doped layer, the first doped layer, quantum well layer, electronic barrier layer and the second doped layer on described LAO substrate.
2. the nonpolar blue-ray LED epitaxial wafer based on LAO substrate as claimed in claim 1, it is characterized in that, described resilient coating is non-polar m-surface GaN resilient coating, described the first non-doped layer is nonpolar non-doping u-GaN layer, described the first doped layer is nonpolar N-shaped Doped GaN film, described quantum well layer is nonpolar InGaN/GaN quantum well layer, and described electronic barrier layer is non-polar m face AlGaN electronic barrier layer, and described the second doped layer is nonpolar p-type Doped GaN film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420135881.3U CN203850326U (en) | 2014-03-24 | 2014-03-24 | Nonpolar blue LED epitaxial wafer based on LAO substrate |
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| CN201420135881.3U CN203850326U (en) | 2014-03-24 | 2014-03-24 | Nonpolar blue LED epitaxial wafer based on LAO substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600162A (en) * | 2014-03-24 | 2015-05-06 | 上海卓霖信息科技有限公司 | LAO substrate nonpolar blue-light LED epitaxial wafer and preparation method thereof |
| CN107170862A (en) * | 2017-06-08 | 2017-09-15 | 中国科学院半导体研究所 | A kind of non-polar plane light emitting diode with quantum dots and preparation method thereof |
-
2014
- 2014-03-24 CN CN201420135881.3U patent/CN203850326U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600162A (en) * | 2014-03-24 | 2015-05-06 | 上海卓霖信息科技有限公司 | LAO substrate nonpolar blue-light LED epitaxial wafer and preparation method thereof |
| WO2015144023A1 (en) * | 2014-03-24 | 2015-10-01 | 上海卓霖信息科技有限公司 | Non-polar blue led epitaxial wafer based on lao substrate and preparation method therefor |
| CN104600162B (en) * | 2014-03-24 | 2016-01-27 | 上海卓霖半导体科技有限公司 | Based on the preparation method of the nonpolar blue-ray LED epitaxial wafer of LAO substrate |
| US9978908B2 (en) | 2014-03-24 | 2018-05-22 | Shanghai Chiptek Semiconductor Technology Co., Ltd. | Non-polar blue light LED epitaxial wafer based on LAO substrate and preparation method thereof |
| CN107170862A (en) * | 2017-06-08 | 2017-09-15 | 中国科学院半导体研究所 | A kind of non-polar plane light emitting diode with quantum dots and preparation method thereof |
| CN107170862B (en) * | 2017-06-08 | 2019-03-22 | 中国科学院半导体研究所 | A kind of non-polar plane light emitting diode with quantum dots and preparation method thereof |
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Inventor after: Cai Zhuoran Inventor after: Gao Hai Inventor after: Liu Zhi Inventor after: Yin Xianglin Inventor after: Liu Zhengwei Inventor after: Zhang Xinyao Inventor after: Zhou Huanyu Inventor before: Cai Zhuoran Inventor before: Gao Hai Inventor before: Liu Zhi Inventor before: Yin Xianglin Inventor before: Liu Zhengwei Inventor before: Cheng Jielong |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: CAI ZHUORAN GAO HAI LIU ZHI YIN XIANGLIN LIU ZHENGWEI CHENG JIELONG TO: CAI ZHUORAN GAO HAI LIU ZHI YIN XIANGLIN LIU ZHENGWEI ZHANG XINYAO ZHOU HUANYU |
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Effective date of registration: 20150929 Address after: Qingpu District of Shanghai City Hua Pu Road 201799 No. 500 building 6 A zone, 1 floor room 131 Patentee after: SHANGHAI CHIPTEK SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 200083 No. 196 Ouyang Road, Shanghai, 10-701 Patentee before: SHANGHAI CHIPTEK TECHNOLOGY Co.,Ltd. |
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Address after: Qingpu District of Shanghai City Hua Pu Road 201799 No. 500 building 6 A zone, 1 floor room 131 Patentee after: Shanghai Xi Xin Semiconductor Technology Co.,Ltd. Address before: Qingpu District of Shanghai City Hua Pu Road 201799 No. 500 building 6 A zone, 1 floor room 131 Patentee before: SHANGHAI CHIPTEK SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Denomination of utility model: LAO substrate nonpolar blue-light LED epitaxial wafer and preparation method thereof Effective date of registration: 20170517 Granted publication date: 20140924 Pledgee: Bank of Shanghai Limited by Share Ltd North Branch Pledgor: Shanghai Xi Xin Semiconductor Technology Co.,Ltd. Registration number: 2017310000028 |
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Date of cancellation: 20220826 Granted publication date: 20140924 Pledgee: Bank of Shanghai Limited by Share Ltd North Branch Pledgor: Shanghai Xi Xin Semiconductor Technology Co.,Ltd. Registration number: 2017310000028 |
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