CN203824509U - Test structure for detecting bonding accuracy - Google Patents
Test structure for detecting bonding accuracy Download PDFInfo
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- CN203824509U CN203824509U CN201420226934.2U CN201420226934U CN203824509U CN 203824509 U CN203824509 U CN 203824509U CN 201420226934 U CN201420226934 U CN 201420226934U CN 203824509 U CN203824509 U CN 203824509U
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- China
- Prior art keywords
- test structure
- bonding accuracy
- bonding
- wafer
- metal
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- Expired - Lifetime
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- 238000012360 testing method Methods 0.000 title claims abstract description 54
- 238000001514 detection method Methods 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims description 88
- 239000002184 metal Substances 0.000 claims description 88
- 238000005259 measurement Methods 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000004021 metal welding Methods 0.000 abstract 9
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- -1 aluminium-germanium Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The utility model provides a test structure for detecting bonding accuracy. The test structure at least comprises two first metal welding pads which are prepared on a first wafer, and two second metal welding pads which are prepared on a second wafer, wherein the first metal welding pads and the second metal welding pads respectively realize electrical connection through the bonding of the first wafer and the second wafer; and the inner side edges of the first metal welding pads are parallelly arranged, a part of each second metal welding pad is overlapped with the corresponding first metal welding pad, the other parts exceed the inner side edges of the first metal welding pads, and the adjacent sides of the second metal welding pads are respectively provided with measuring points. Through the unique structural design, the test structure for detecting bonding accuracy adopts relative proportion of resistance value to detect the bonding accuracy, combines the detection of bonding accuracy and the detection of bonding quality, can effectively reduce the influence of bonding quality on the detection of bonding accuracy, and greatly improves the precision of the detection of bonding accuracy.
Description
Technical field
The utility model relates to semiconductor reliability field tests, particularly relates to a kind of test structure that detects bonding accuracy.
Background technology
In 3D IC encapsulation technology, wafer face opposite stacking (F2F Stacking), 2.5D silicon intermediary layer (Interposer) etc., capital relates to the bonding techniques of silicon chip and silicon chip, bonding techniques is one of basic technology carrying out semiconductor packages, and at present conventional be the low-temperature thermocompression bonding mode of copper-copper.In wafer bond techniques evolution, wafer bonding quality is to evaluate the key issue of wafer bond techniques quality, and bonding accuracy is a very important ring in wafer bonding quality.The height of bonding accuracy will have a strong impact on sensitivity and the serviceability of semiconductor devices.Current bonding accuracy is all to utilize infrared optical means to measure to obtain.
In the time that two wafer are carried out to bonding, in two wafer, be respectively equipped with bonding alignment mark, aim at latter two bonding alignment mark when bonding and formed special figure, be illustrated in figure 1 after two wafer bondings are aimed at and form criss-cross bonding alignment mark vertical view.Figure 2 shows that the side view of this criss-cross bonding alignment mark, this criss-cross bonding alignment mark is to be combined by the upper and lower two-layer bonding alignment mark in two wafer as shown in Figure 2.In prior art, utilize infrared light method to measure bonding alignment mark figure, utilize the instruments such as microscope to measure its each distance, by obtaining side-play amount with the contrast of standard value, evaluate the height of bonding accuracy with this.
There is following drawback in the method that detects bonding accuracy in prior art: 1, in prior art for measuring the comparison in equipment complexity of bonding accuracy marker graphic, comprising microscope, spiral vernier measuring eyepiece, ccd video camera, image processor and infrared light supply etc., the price comparison costliness of these equipment, especially powerful microscope.2, detector Real-time Collection is to comparing with the video standard signal stored in computer after bonding marking image signal, if think identical, automatically identify successfully, acquiescence bonding accuracy has reached production requirement, and in fact, bonding alignment mark image conforms to standard picture and can not illustrate that bonding accuracy reaches production requirement, brings unfavorable factor to the measurement of bonding accuracy.What 3, adopt because the bonding of wafer current is normal is the bonding mode of copper-copper low temperature and pressure, can metallic extension phenomenon in the hot pressing in the middle of bonding technology, as shown in Figures 3 and 4.As shown in Figure 3, after upper and lower two wafer bondings, the extension that the bonding face of bonding metal layer copper-copper produces copper because of hot pressing, copper extension section 1 has exceeded bonding face scope.Be illustrated in figure 4 the aluminium extension section 2 producing after aluminium-germanium bonding, this aluminium-germanium extension section 2 also shows as irregular figure.The variation of this measurement graphics shape has brought difficulty and larger error to measurement work.
Therefore, how to find the method for the detection bonding accuracy that a kind of accuracy is high, support equipment is cheap to become one of slip-stick artist's problem demanding prompt solution of this area.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of test structure that detects bonding accuracy, detects the problems such as large, the difficult realization of error for solving prior art bonding accuracy.
For achieving the above object and other relevant objects, the utility model provides a kind of test structure that detects bonding accuracy, and described test structure at least comprises:
Be prepared in two the first metal pads on the first wafer and be prepared in two the second metal pads on the second wafer;
Two described the second metal pads and two described the first metal pads are realized and being electrically connected by the bonding of described the first wafer and described the second wafer respectively;
The inner side edge of two described the first metal pads be arranged in parallel, described in two, a part for the second metal pad and two described the first metal pads are overlapping respectively, another part exceeds respectively the inner side edge of two described the first metal pads, and an adjacent side of two described the second metal pads is respectively equipped with measurement point.
Preferably, the area of described the first metal pad is greater than the area of described the second metal pad.
Preferably, the material of described the first metal pad and described the second metal pad is copper.
Preferably, two described the second metal pads can link together, and share a described measurement point.
Preferably, described the first metal pad is square structure.
Preferably, described the second metal pad is rectangle structure.
Preferably, described the first metal pad is positioned at top, and described the second metal pad is positioned at below.
Preferably, described test structure can also can longitudinally arrange by horizontally set.
Preferably, the test structure of described detection bonding accuracy is prepared in the Cutting Road region of wafer.
As mentioned above, the test structure of detection bonding accuracy of the present utility model, has following beneficial effect:
The test structure of detection bonding accuracy of the present utility model is by distinctive special structural design, adopt the relative scale of resistance value to detect bonding accuracy, bonding accuracy is detected with bonding quality and detects and combine, can effectively reduce the impact that bonding quality para-linkage accuracy detects, greatly improve the degree of accuracy that bonding accuracy detects.
Brief description of the drawings
Fig. 1 is shown as the schematic top plan view of the mark of detection bonding accuracy of the prior art.
Fig. 2 is shown as the cross-sectional schematic in AA direction that is marked at of detection bonding accuracy of the prior art.
Fig. 3 is shown as after copper-copper bonding of the prior art the copper sectional schematic diagram producing that extends.
Fig. 4 is shown as after aluminium-germanium bonding of the prior art the aluminium sectional schematic diagram producing that extends
Fig. 5 is shown as two sections of discrete point test structural representations of bonding accuracy on detection directions X of the present utility model.
Fig. 6 is shown as two sections of discrete point test structural representations of bonding accuracy in detection Y-direction of the present utility model.
Fig. 7 is shown as the one-part form test structure schematic diagram of bonding accuracy on detection directions X of the present utility model.
Fig. 8 is shown as the one-part form test structure schematic diagram of bonding accuracy in detection Y-direction of the present utility model.
Fig. 9 is shown as the XY convolution test structure schematic diagram of detection bonding accuracy of the present utility model.
Figure 10 is shown as the principle schematic of detection bonding accuracy of the present utility model.
Element numbers explanation
The section that 1 bronze medal extension produces
The section that 2 aluminium extensions produce
3 detect the test structure of bonding accuracy
31 first metal pads
32 second metal pads
321 measurement points
The length of the first metal pad and the second metal pad lap under D alignment case
δ side-play amount
Embodiment
By specific instantiation, embodiment of the present utility model is described below, those skilled in the art can understand other advantages of the present utility model and effect easily by the disclosed content of this instructions.The utility model can also be implemented or be applied by other different embodiment, and the every details in this instructions also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present utility model.
Refer to Fig. 5～Figure 10.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present utility model in a schematic way, satisfy and only show with assembly relevant in the utility model in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
As shown in Figure 5, the utility model provides a kind of test structure that detects bonding accuracy, and described test structure at least comprises:
Be prepared in two the first metal pads 31 on the first wafer and be prepared in two the second metal pads 32 on the second wafer.
Two described the first metal pads 31 are prepared in the Cutting Road region of described the first wafer, described the first metal pad 31 can be the shape that meets arbitrarily designing requirement, can be for example circular, triangle, rectangle, the one in square, as shown in Figure 5, in the present embodiment, the vertical view of described the first pad 31 is shaped as square structure.The material of described the first metal pad 31 can be any metal, and in the present embodiment, metal material is copper.
Two described the second metal pads 32 are prepared in the Cutting Road region of described the second wafer, corresponding with the position of two described the first metal pads 31, described the second metal pad 32 can be the shape that meets arbitrarily designing requirement, can be for example circular, triangle, rectangle, one in square, as shown in Figure 5, in the present embodiment, the vertical view of described the second pad 32 is shaped as rectangle structure.The material of described the second metal pad 32 can be any metal, and in the present embodiment, metal material is copper.
By the bonding of described the first wafer and described the second wafer, two described the first metal pads 31 and two described the second metal pads 32 are realized respectively electric connection.Upward, described the second wafer is inverted in described the first wafer top to described the first wafer frontside, realizes the test structure 3 of detection bonding accuracy of the present utility model by bonding.Described the first metal pad 31 is positioned at lower floor, described the second metal pad 32 is positioned at upper strata, the area of described the first metal pad is greater than the area of described the second metal pad, the inner side edge of two described the first metal pads 31 of lower floor be arranged in parallel, a part for two described second metal pads 32 on upper strata and two described the first metal pads 31 are overlapping respectively, another part exceeds respectively the inner side edge of two described the first metal pads 31, and an adjacent side of two described the second metal pads 32 is respectively equipped with measurement point 321.
The test structure 3 of described detection bonding accuracy can also can longitudinally arrange by horizontally set.As shown in Figure 5, test structure 3 horizontally sets of described detection bonding accuracy, for detection of bonding accuracy on directions X, this structure is two sections of discrete point test structures.As shown in Figure 6, the test structure 3 of described detection bonding accuracy longitudinally arranges, and for detection of bonding accuracy in Y-direction, this structure is two sections of discrete point test structures.
Two described the second metal pads 32 can link together, and share a described measurement point 321.As shown in Figure 7, the test structure 3 of the described detection bonding accuracy of horizontally set, its measurement point 321 places link together, two described the second metal pads 32 are merged into a metal pad, two ends are overlapping with two described the first metal pads 31 respectively, measurement point 321 is positioned in the middle of the metal pad after merging, and this test structure is the one-part form test structure that detects bonding accuracy on directions X.Be illustrated in figure 8 the one-part form test structure that detects bonding accuracy in Y-direction.
Be illustrated in figure 9 the XY convolution test structure schematic diagram of detection bonding accuracy of the present utility model, one-part form test structure in X shown in Fig. 7 and Fig. 8 and the single direction of Y is combined, the bonding accuracy that can simultaneously complete in directions X and Y-direction detects, and efficiency improves greatly.
The principle of work of the test structure 3 of above-mentioned detection bonding accuracy is as follows:
As shown in figure 10, will after two wafer bondings, obtain the test structure 3 of detection bonding accuracy of the present utility model, in the present embodiment, taking the sectional type test structure on directions X as example, the principle of other structures is consistent, does not repeat one by one at this.In the time that bonding accuracy reaches production requirement, two described the second metal pads 32 respectively area overlapping with two described the first metal pads 31 equate, and hypothesis overlapping area is D in detection side's length upwards.As shown in figure 10 for there being certain deviation, the test structure forming after bonding, wherein, D is that in the bonding accuracy test structure forming in the situation of aiming at completely, overlapping area is in detection side's length upwards, δ is side-play amount.Side-play amount can calculate by following formula:
Wherein R
l=R
1+ R
2+ R
3l, R
r=R
1+ R
2+ R
3r, R
1be the resistance value of the first metal pad 31, R
2be the resistance value of the second metal pad 32, R
3lfor the resistance value of left side the first metal pad 31 and the second metal pad 32 faying surfaces, R
3rfor the resistance value of right side the first metal pad 31 and the second metal pad 32 faying surfaces.R
1and R
2can obtain by the method for measuring metal level square resistance R
land R
rcan detect and obtain by measurement point 321.Each resistance value can obtain by the method that adds steady current measuring voltage, in addition the method that also can measure by applying constant voltage electric current obtains resistance value, specific implementation method can be carried out preferentially as the case may be, in the present embodiment, obtain resistance value by the method that applies constant voltage measurement electric current.Overlapping area under the each resistance value recording and complete alignment case, at detection side's length D substitution above formula upwards, can be obtained to the value of offset delta.When δ be on the occasion of time, the second wafer is with respect to the first wafer δ that moves to left; In the time that δ is negative value, the second wafer is with respect to the first wafer δ that moves to right.
In sum, the utility model provides a kind of test structure that detects bonding accuracy, and described test structure at least comprises: be prepared in two the first metal pads on the first wafer and be prepared in two the second metal pads on the second wafer; Described the first metal pad is positioned at lower floor, and described the second metal pad is positioned at upper strata, and two described the second metal pads and two described the first metal pads are realized and being electrically connected by the bonding of described the first wafer and described the second wafer respectively; Two described the first metal pads be arranged in parallel, two described the second metal pads are positioned at the inner side of two described the first pads, and one end, outside of two described the second metal pads partly overlaps with two described the first metal pads respectively, and one end, inner side of two described the second metal pads is respectively equipped with measurement point.The test structure of detection bonding accuracy of the present utility model is by distinctive structural design, adopt the relative scale of resistance value to detect bonding accuracy, bonding accuracy is detected with bonding quality and detects and combine, can effectively reduce the impact that bonding quality para-linkage accuracy detects, greatly improve the degree of accuracy that bonding accuracy detects.So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (9)
1. a test structure that detects bonding accuracy, is characterized in that, described test structure at least comprises:
Be prepared in two the first metal pads on the first wafer and be prepared in two the second metal pads on the second wafer;
Two described the second metal pads and two described the first metal pads are realized and being electrically connected by the bonding of described the first wafer and described the second wafer respectively;
The inner side edge of two described the first metal pads be arranged in parallel, described in two, a part for the second metal pad and two described the first metal pads are overlapping respectively, another part exceeds respectively the inner side edge of two described the first metal pads, and an adjacent side of two described the second metal pads is respectively equipped with measurement point.
2. the test structure of detection bonding accuracy according to claim 1, is characterized in that: the area of described the first metal pad is greater than the area of described the second metal pad.
3. the test structure of detection bonding accuracy according to claim 1, is characterized in that: the material of described the first metal pad and described the second metal pad is copper.
4. the test structure of detection bonding accuracy according to claim 1, is characterized in that: two described the second metal pads can link together, and shares a described measurement point.
5. the test structure of detection bonding accuracy according to claim 1, is characterized in that: described the first metal pad is square structure.
6. the test structure of detection bonding accuracy according to claim 1, is characterized in that: described the second metal pad is rectangle structure.
7. the test structure of detection bonding accuracy according to claim 1, is characterized in that: described the first metal pad is positioned at top, and described the second metal pad is positioned at below.
8. the test structure of detection bonding accuracy according to claim 1, is characterized in that: the test structure of described detection bonding accuracy can also can longitudinally arrange by horizontally set.
9. the test structure of detection bonding accuracy according to claim 1, is characterized in that: the test structure of described detection bonding accuracy is prepared in the Cutting Road region of wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420226934.2U CN203824509U (en) | 2014-05-05 | 2014-05-05 | Test structure for detecting bonding accuracy |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420226934.2U CN203824509U (en) | 2014-05-05 | 2014-05-05 | Test structure for detecting bonding accuracy |
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| Publication Number | Publication Date |
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| CN203824509U true CN203824509U (en) | 2014-09-10 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109422234A (en) * | 2017-09-01 | 2019-03-05 | 中芯国际集成电路制造(上海)有限公司 | Test structure and its manufacturing method |
| CN109632791A (en) * | 2018-11-12 | 2019-04-16 | 航天科工防御技术研究试验中心 | A kind of bonding quality assessment method of semiconductor devices bonding wire |
| CN111863648A (en) * | 2020-06-04 | 2020-10-30 | 中国电子科技集团公司第五十五研究所 | Method for measuring offset after integration |
| WO2024026914A1 (en) * | 2022-08-01 | 2024-02-08 | 长鑫存储技术有限公司 | Semiconductor structure and measurement method |
-
2014
- 2014-05-05 CN CN201420226934.2U patent/CN203824509U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109422234A (en) * | 2017-09-01 | 2019-03-05 | 中芯国际集成电路制造(上海)有限公司 | Test structure and its manufacturing method |
| CN109422234B (en) * | 2017-09-01 | 2021-04-09 | 中芯国际集成电路制造(上海)有限公司 | Test structure and manufacturing method thereof |
| CN109632791A (en) * | 2018-11-12 | 2019-04-16 | 航天科工防御技术研究试验中心 | A kind of bonding quality assessment method of semiconductor devices bonding wire |
| CN109632791B (en) * | 2018-11-12 | 2022-03-25 | 航天科工防御技术研究试验中心 | Method for evaluating bonding quality of semiconductor device bonding wire |
| CN111863648A (en) * | 2020-06-04 | 2020-10-30 | 中国电子科技集团公司第五十五研究所 | Method for measuring offset after integration |
| WO2024026914A1 (en) * | 2022-08-01 | 2024-02-08 | 长鑫存储技术有限公司 | Semiconductor structure and measurement method |
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