CN206574709U - Semi-conductor test structure - Google Patents
Semi-conductor test structure Download PDFInfo
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- CN206574709U CN206574709U CN201720301547.4U CN201720301547U CN206574709U CN 206574709 U CN206574709 U CN 206574709U CN 201720301547 U CN201720301547 U CN 201720301547U CN 206574709 U CN206574709 U CN 206574709U
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Abstract
The utility model provides a kind of semi-conductor test structure, including：Several active areas being intervally arranged；Connection through hole, the top positioned at close each active area two ends, and one end are connected with the active area；The first metal layer, is connected with the described one end of connection through hole away from the active area；Metallic stacked structure, above the first metal layer, and is mutually separated with spacing with the first metal layer；The metallic stacked structure includes the second metal layer being intervally arranged successively from the bottom to top to nth metal layer, wherein, N >=3；The second metal layer includes several metal derbies being intervally arranged to the nth metal layer, and the quantity of the metal derby is identical with the quantity of the connection through hole, and the metal derby and the connection through hole corresponding distribution up and down one by one.Semi-conductor test structure of the present utility model can realize being accurately positioned for focus, improve the success rate of failure analysis, shorten the time of failure analysis.
Description
Technical field
The utility model is related to semiconductor technology device arts, more particularly to a kind of semi-conductor test structure.
Background technology
In WAT (Wafer Acceptance Test) test structure, the resistance for testing connection through hole (Via or CT)
The test structure of value is generally chain structure as shown in Figure 1, and the test structure includes：Multiple active areas in array distribution
11st, the metal level positioned at the connection through hole 12 above the two ends of active area 11 and positioned at the top of connection through hole 12
13, described connection one end of through hole 12 is connected with the active area 11, and the other end is connected with the metal level 13；The metal
Layer 13 connects the active area 11 successively head and the tail；The two ends of the test structure are connected with detection welding pad 14.
If exception, which occurs, in the resistance of the connection through hole 12 in above-mentioned test structure to be needed to carry out failure analysis (FA)
When, typically analysis of central issue can be first carried out to determine failpoint, be then further analyzed again at focus.The institute in such as Fig. 1
In the test structure shown, the arrangement between the active area 11 and the connection through hole 12 is than sparse, so (being used in OBIRCH
To do the board of analysis of central issue) imaging in, it may be clearly seen that focus which connection through hole top, it is possible to achieve
It is accurately positioned.However, for some more close test structures of arrangement, clearly image, nothing can not be obtained under OBIRCH
Method distinguishes two pieces of adjacent metal levels, in this case, even if there is focus, can not be pin-pointed to some connection logical
Hole, comes difficult to follow-up analytic band.
At present for arrange more close test structure can not the not no good solution of pinpoint focus, typically
It is the distance for estimating focus distance test structural edge, and expands the scope of analysis, so not only time-consuming, and success rate
Than relatively low.
Therefore it provides a kind of follow-on semi-conductor test structure is very necessary.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of semiconductor test knot
Focus, can not be pin-pointed to by structure for solving test structure of the prior art for arranging more close test structure
The problem of some connection through hole, and for the time-consuming ratio of test that focus is pin-pointed into some connection through hole and brought
Longer, low success rate of problem.
In order to achieve the above objects and other related objects, the utility model provides a kind of semi-conductor test structure, described half
Conductor test structure includes：
Several active areas being intervally arranged；
Connection through hole, the top positioned at close each active area two ends, and one end are connected with the active area；
The first metal layer, is connected with the described one end of connection through hole away from the active area；
Metallic stacked structure, above the first metal layer, and is mutually separated with spacing with the first metal layer；It is described
Metallic stacked structure includes the second metal layer being intervally arranged successively from the bottom to top to nth metal layer, wherein, N >=3；Described
Two metal levels include several metal derbies being intervally arranged, the quantity of the metal derby and the company to the nth metal layer
The quantity for connecting hole is identical, and the metal derby and the connection through hole corresponding distribution up and down one by one.
It is used as a kind of preferred scheme of semi-conductor test structure of the present utility model, the first metal layer to the N
In metal level, the spacing between adjacent metal is equal.
It is used as a kind of preferred scheme of semi-conductor test structure of the present utility model, the first metal layer to the N
In metal level, the spacing between adjacent metal.
As a kind of preferred scheme of semi-conductor test structure of the present utility model, the spacing between the adjacent metal level
More than or equal to the height of the connection through hole.
As a kind of preferred scheme of semi-conductor test structure of the present utility model, from the one of the semi-conductor test structure
Side is to relative opposite side, and the metal derby of each layer metal level is pressed by the metal derby in the second metal layer to described
The order of the metal derby in n-th layer metal level is in periodic arrangement.
As a kind of preferred scheme of semi-conductor test structure of the present utility model, the metal derby is square cylindricality metal
Block or cylindrical metal block.
As a kind of preferred scheme of semi-conductor test structure of the present utility model, the lateral dimension of the metal derby and institute
The lateral dimension for stating connection through hole is identical.
As a kind of preferred scheme of semi-conductor test structure of the present utility model, the semi-conductor test structure also includes
Dielectric layer, the dielectric layer is located between each layer metal level and between the metal derby of same metal level.
As a kind of preferred scheme of semi-conductor test structure of the present utility model, the active area and the connection through hole
It is in array distribution.
As described above, semi-conductor test structure of the present utility model, has the advantages that：It is of the present utility model partly to lead
Body test structure can realize being accurately positioned for focus, improve the success rate of failure analysis, shorten the time of failure analysis；Meanwhile,
Semi-conductor test structure of the present utility model is simple in construction, easily operated, need not increase on the basis of existing test structure
Plus extra processing step is that can obtain.
Brief description of the drawings
Fig. 1 is shown as the overlooking the structure diagram of semi-conductor test structure of the prior art.
Fig. 2 is shown as the cross section structure schematic diagram of semi-conductor test structure of the present utility model.
Fig. 3 is shown as the metal derby of semi-conductor test structure of the present utility model and set with being connected to correspond above and below through hole
Schematic top plan view.
Fig. 4 to Fig. 7 is shown as the test philosophy schematic diagram of semi-conductor test structure of the present utility model, wherein, Fig. 4 is
The position relationship schematic diagram of metal derby and focus in five metal levels, Fig. 5 is the metal derby in the 4th metal level and the position of focus
Relation schematic diagram is put, Fig. 6 is the metal derby and the position relationship schematic diagram of focus in the 3rd metal level, and Fig. 7 is shown as the second gold medal
Belong to the position relationship schematic diagram of the metal derby and focus in layer.
Component label instructions
11 active areas
12 connection through holes
13 metal levels
14 detection welding pads
21 active areas
22 connection through holes
23 the first metal layers
24 second metal layers
25 the 3rd metal levels
26 the 4th metal levels
27 fifth metal layers
28 metal derbies
Metal derby in 281 second metal layers
Metal derby in 282 the 3rd metal levels
Metal derby in 283 the 4th metal levels
Metal derby in 284 fifth metal layers
29 focuses
Embodiment
Embodiment of the present utility model is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages of the present utility model and effect easily.
Fig. 2 is referred to Fig. 7.It should be clear that the appended diagram of this specification depicted structure, ratio, size etc., are only used to
Coordinate the content disclosed in specification, so that those skilled in the art is understood with reading, be not limited to the utility model
Enforceable qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size
Adjustment, in the case where not influenceing the utility model effect that can be generated and the purpose that can reach, all should still fall in the utility model
Disclosed technology contents are obtained in the range of covering.Meanwhile, in this specification it is cited as " on ", " under ", " left side ",
The term on " right side ", " middle part " and " one " etc., is merely convenient to understanding for narration, and it is enforceable to be not used to restriction the utility model
Scope, being altered or modified for its relativeness is enforceable when being also considered as the utility model under without essence change technology contents
Category.
The utility model provides a kind of semi-conductor test structure, referring to Fig. 2, the semi-conductor test structure includes：If
The dry active area 21 being intervally arranged；Through hole 22 is connected, the connection through hole 22 is located at close to each two ends of active area 21
Top, and one end is connected with the active area 21；The first metal layer 23, the first metal layer 23 and the connection through hole 22
One end away from the active area 21 is connected；Metallic stacked structure, it is described metal laminated on the first metal layer 23
Side, and mutually it is separated with spacing with the first metal layer 23；The metallic stacked structure includes what is be intervally arranged successively from the bottom to top
Second metal layer 24 to nth metal layer, wherein, N >=3, wherein, Fig. 1 with N=5 as an example, i.e. described metal laminated bottom right extremely
Upper second metal layer 24, the 3rd metal level 25, the 4th metal level 26 and the fifth metal layer 27 for including being intervally arranged successively；It is described
Second metal layer 24, the 3rd metal level 25, the 4th metal level 26 and the fifth metal layer 27 include several
The metal derby 28 being intervally arranged, the quantity of the metal derby 28 is identical with the quantity of the connection through hole 22, and the metal derby
28 connect the corresponding distribution up and down one by one of through hole 22 with described.
In one example, the first metal layer 23 is into the nth metal layer, the spacing phase between adjacent metal
Deng, i.e., by taking N=5 as an example, the first metal layer 23, the second metal layer 24, the 3rd metal level 25, the 4th gold medal
Belong to 26 grades of the layer adjacent spacing between the two of fifth metal layer 27 equal.
Certainly, in another example, the first metal layer 23 is into the nth metal layer, between adjacent metal
Spacing can not also be waited.
As an example, the spacing between the adjacent metal level can be set according to actual needs, it is preferable that this reality
Apply in example, the spacing between the adjacent metal level is more than or equal to the height of the connection through hole 22.
As an example, from the side of the semi-conductor test structure to relative opposite side, the gold of each layer metal level
Belong to block 28 by the metal derby by the metal derby 281 in the second metal layer 24 into the n-th layer metal level
Order is in periodic arrangement；I.e. as shown in Figure 3, in the array structure that the metal level 28 is constituted, from the one of the array
Pressed to relative opposite side by the metal derby 281 in the second metal layer 24 into the layer 5 metal level 27 side
The metal derby 284 order be in periodic arrangement.
As an example, the metal derby 28 can be tetragonal prism shape metal derby or cylindrical metal block, certainly, show at other
In example, the shape of the metal derby 28 can also for other arbitrarily can with shape.
As an example, the lateral dimension of the metal derby 28 is identical with the lateral dimension of the connection through hole 22；When described
When the end surface shape of metal derby 28 and the connection through hole 22 is circle, the diameter of the metal derby 28 and the connection through hole
22 diameter is equal；As shown in figure 3, when the end face that the end face of the metal derby 28 is square, described connection through hole 22 is round
During shape, the width of the metal derby 28 is equal with the diameter of the connection through hole 22.
As an example, the semi-conductor test structure also includes dielectric layer (not shown), the dielectric layer is located at each layer gold
Between category layer and between the metal derby 28 of same metal level.
As an example, the active area 21 and the connection through hole 22 are in array distribution.
The test philosophy of semi-conductor test structure of the present utility model is：First, by the gold in the fifth metal layer 27
Belong to the focal imaging of block 284, as shown in figure 4, carrying out analysis of central issue, it is assumed that focus is located at the position shown in Fig. 4, if the heat
Metal level 284 in point 29 and the fifth metal layer 27 is all misaligned, then metal derby then to the 4th metal level 26
283 are focused imaging, then observe the relative position of the focus 29 and the metal derby 283 of the 4th metal level 26, if
The metal derby 283 of the focus 29 and the 4th metal level 26 is all misaligned, as shown in figure 5, then then to the 3rd gold medal
Metal derby 282 in category layer 25 is focused imaging, then observes the focus 29 and the metal derby in the 3rd metal level 25
282 relative position, if the metal derby 282 in the focus 29 and the 3rd metal level 25 is all misaligned, such as Fig. 6 institutes
Show, be then then focused imaging to the metal derby 281 in the second metal layer 24, then observe the focus 29 and described the
The relative position of metal derby 281 in two metal levels 24, if it find that the focus 29 with it is a certain in the second metal layer 24
The individual metal derby 281 is overlapped, as shown in fig. 7, then illustrating that the corresponding connection through hole 22 of the metal derby 281 is asked
Topic, next directly can further be analyzed the problematic connection through hole 22, it is achieved thereby that being accurately positioned.Need
Illustrate during above-mentioned analysis, which layer metal level no matter analyzed, as long as finding the focus 29 and respective layer
Metal derby in metal level is overlapped, then analysis terminates.
In summary, the utility model provides a kind of semi-conductor test structure, and the semi-conductor test structure includes：It is some
The individual active area being intervally arranged；Through hole is connected, the top positioned at close each active area two ends, and one end and the active area
It is connected；The first metal layer, is connected with the described one end of connection through hole away from the active area；Metallic stacked structure, is located at
Above the first metal layer, and spacing is mutually separated with the first metal layer；The metallic stacked structure is included from the bottom to top
The second metal layer being intervally arranged successively to nth metal layer, wherein, N >=3；The second metal layer is equal to the nth metal layer
Including the metal derby that several are intervally arranged, the quantity of the metal derby is identical with the quantity of the connection through hole, and the gold
Belong to block and the connection through hole corresponding distribution up and down one by one.Semi-conductor test structure of the present utility model can realize the accurate of focus
Positioning, improves the success rate of failure analysis, shortens the time of failure analysis；Meanwhile, semi-conductor test structure of the present utility model
Simple in construction, easily operated, on the basis of existing test structure need not increase extra processing step can obtain.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art can all be carried out without prejudice under spirit and scope of the present utility model to above-described embodiment
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by claim of the present utility model.
Claims (9)
1. a kind of semi-conductor test structure, it is characterised in that the semi-conductor test structure includes：
Several active areas being intervally arranged；
Connection through hole, the top positioned at close each active area two ends, and one end are connected with the active area；
The first metal layer, is connected with the described one end of connection through hole away from the active area；
Metallic stacked structure, above the first metal layer, and is mutually separated with spacing with the first metal layer；The metal
Laminated construction includes the second metal layer being intervally arranged successively from the bottom to top to nth metal layer, wherein, N >=3；Second gold medal
Category layer includes several metal derbies being intervally arranged to the nth metal layer, and the quantity of the metal derby and the connection are logical
The quantity in hole is identical, and the metal derby and the connection through hole corresponding distribution up and down one by one.
2. semi-conductor test structure according to claim 1, it is characterised in that：The first metal layer is golden to the N
Belong in layer, the spacing between adjacent metal is equal.
3. semi-conductor test structure according to claim 1, it is characterised in that：The first metal layer is golden to the N
Belong in layer, the spacing between adjacent metal.
4. the semi-conductor test structure according to Claims 2 or 3, it is characterised in that：Between between the adjacent metal level
Height away from more than or equal to the connection through hole.
5. semi-conductor test structure according to claim 1, it is characterised in that：From the side of the semi-conductor test structure
To relative opposite side, the metal derby of each layer metal level is pressed by the metal derby in the second metal layer to described the
The order of the metal derby in N layers of metal level is in periodic arrangement.
6. semi-conductor test structure according to claim 1, it is characterised in that：The metal derby is square cylindricality metal derby
Or cylindrical metal block.
7. semi-conductor test structure according to claim 1, it is characterised in that：The lateral dimension of the metal derby with it is described
The lateral dimension for connecting through hole is identical.
8. semi-conductor test structure according to claim 1, it is characterised in that：The semi-conductor test structure also includes being situated between
Matter layer, the dielectric layer is located between each layer metal level and between the metal derby of same metal level.
9. semi-conductor test structure according to claim 1, it is characterised in that：The active area and the connection through hole are equal
In array distribution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720301547.4U CN206574709U (en) | 2017-03-27 | 2017-03-27 | Semi-conductor test structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720301547.4U CN206574709U (en) | 2017-03-27 | 2017-03-27 | Semi-conductor test structure |
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| Publication Number | Publication Date |
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| CN206574709U true CN206574709U (en) | 2017-10-20 |
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ID=60053517
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| CN201720301547.4U Active CN206574709U (en) | 2017-03-27 | 2017-03-27 | Semi-conductor test structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117260A (en) * | 2020-09-25 | 2020-12-22 | 上海华力微电子有限公司 | Metal electromigration test circuit structure |
| CN112269045A (en) * | 2020-10-12 | 2021-01-26 | 上海华力集成电路制造有限公司 | Test structure for failure analysis |
-
2017
- 2017-03-27 CN CN201720301547.4U patent/CN206574709U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117260A (en) * | 2020-09-25 | 2020-12-22 | 上海华力微电子有限公司 | Metal electromigration test circuit structure |
| CN112269045A (en) * | 2020-10-12 | 2021-01-26 | 上海华力集成电路制造有限公司 | Test structure for failure analysis |
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