CN203746859U - Epitaxial wafer for dual-gate low-voltage power device - Google Patents
Epitaxial wafer for dual-gate low-voltage power device Download PDFInfo
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- CN203746859U CN203746859U CN201420047837.7U CN201420047837U CN203746859U CN 203746859 U CN203746859 U CN 203746859U CN 201420047837 U CN201420047837 U CN 201420047837U CN 203746859 U CN203746859 U CN 203746859U
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- Prior art keywords
- epitaxial
- substrate
- epitaxial loayer
- power device
- voltage power
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- 239000000758 substrate Substances 0.000 claims abstract description 36
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 12
- 229910052785 arsenic Inorganic materials 0.000 claims description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 10
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 12
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 239000002210 silicon-based material Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 14
- 238000000407 epitaxy Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FAWGZAFXDJGWBB-UHFFFAOYSA-N antimony(3+) Chemical compound [Sb+3] FAWGZAFXDJGWBB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides an epitaxial wafer for a dual-gate low-voltage power device. The epitaxial wafer is made of a silicon material and includes a layered structure in which a substrate, a first epitaxial layer and a second epitaxial layer are successively arranged from bottom to top. The epitaxial wafer for the dual-gate low-voltage power device overcomes the defects that the self-doping effect of the substrate leads to worse resistivity uniformity of the epitaxial layers and wider substrate-epitaxial transitional regions, and realizes low energy consumption of the epitaxial layers and substrate.
Description
Technical field
The utility model relates to a kind of semiconductor element, particularly relates to a kind of bipolar grid low-voltage power device epitaxial wafer.
Background technology
As shown in Figure 1, epitaxial wafer is the wafer at the semiconductor monocrystal thin layer (being epitaxial loayer 4) of the upper growth of host substrate (being substrate 3) by methods such as gas phase, liquid phase, molecular beams.Epitaxial wafer has the collector series resistance of reducing, to reduce the function such as saturation voltage drop and power consumption.In a large amount of homoepitaxy sheets that use, the element that the main body of substrate 3 and epitaxial loayer 4 forms is silicon at present.
In the production process of epitaxial wafer, exist general auto-doping phenomenon.Autodoping is due to thermal evaporation or chemical the corrosion of the accessory substance of answering to substrate, make silicon and impurity in substrate enter gas phase, changed doping composition and the concentration in gas phase, thereby caused the impurity actual distribution in epitaxial loayer 4 to depart from ideal situation, this phenomenon is called autodoping effect.By the reason producing, autodoping can be divided into gas phase autodoping, solid phase outdiffusion and system autodoping.The alloy of gas phase autodoping is mainly from the back side and the edge solid phase outdiffusion of wafer; The alloy of solid phase outdiffusion is mainly from the diffusion of substrate, and alloy diffuses to epitaxial loayer 4 at the contact-making surface of substrate and epitaxial loayer 4 by substrate; The alloy of system autodoping is from gas wafer, the inside of graphite plate and reacting furnace cavity homepitaxy sheet process units.
As shown in Figure 1, the structure of epitaxial wafer comprises substrate 3 and epitaxial loayer 4.Because the ion diffusion of doping in substrate 3 diffuses to epitaxial loayer 4 from epitaxial loayer 4 and the contact-making surface of substrate 3, on epitaxial loayer 4, formed substrate-extension transition region 41, therefore epitaxial loayer 4 often comprises substrate-extension transition region 41 and only has epi dopant ion or be only mixed with the pure epitaxial loayer 4 of a small amount of negligible substrate 3 intermediate ions.
Epitaxial wafer dopant mainly contains N-type element and P type element.N-type element comprises arsenic element, antimony element and P elements; P type element master is boron element.Along with the development of terminal electronic product, if thereby the lower power consumption that can make after integrated circuit (IC) design of the higher resistivity of the doping content of substrate 3 is lower.In N-type element, according to the physical characteristic of different ions, P elements is selected as and can constantly adds heavily doped dopant, but increasing along with concentration of dopant in substrate, and the autodoping effect in epitaxy technique is also more and more serious.Autodoping effect can cause epitaxial loayer 4 resistivity evenness variation and substrate-extension transition region 41 to broaden, in order to eliminate this impact, road customer integration circuit design requirement after meeting, conventional way is to add thick epitaxial layer 4, can make power consumption in epitaxial loayer 4 Hou road designs become large but do like this, with increasing originally substrate 3 concentration of dopant, the object that power consumption diminishes was runed counter to again conversely, be unfavorable for the reduction of total power consumption.
Utility model content
The shortcoming of prior art in view of the above, the utility model provides a kind of bipolar grid low-voltage power device epitaxial wafer, the problem that has solved the resistivity evenness variation of extension and caused substrate-extension transition region to broaden because of auto-doping phenomenon.
For achieving the above object, the utility model provides a kind of bipolar grid low-voltage power device epitaxial wafer, described bipolar grid low-voltage power device is silicon by the material of epitaxial wafer, described bipolar grid low-voltage power device epitaxial wafer is layer structure, is followed successively by from bottom to top substrate, the first epitaxial loayer and the second epitaxial loayer.
Further, the doped chemical of described substrate is boron or phosphorus.
Preferably, the doped chemical of described the first epitaxial loayer is arsenic atom or antimony atoms.
Further, the doped chemical of described the second epitaxial loayer is boron or phosphorus.
Preferably, the thickness of described the first epitaxial loayer is 3～4 μ m.
Further, the thickness of described the second epitaxial loayer is 1～4 μ m.
As mentioned above, the bipolar grid low-voltage power device epitaxial wafer that the utility model relates to, the adverse effect that the autodoping effect that has overcome substrate broadens to extension layer resistivity uniformity variation and substrate-extension transition region, has realized the low energy consumption of epitaxial loayer and substrate.
Brief description of the drawings
Fig. 1 is shown as the structural representation of epitaxial wafer in prior art.
Fig. 2 is shown as the structural representation of the bipolar grid low-voltage of the utility model power device epitaxial wafer.
Element numbers explanation
1 first epitaxial loayer
2 second epitaxial loayers
3 substrates
4 epitaxial loayers
41 transition regions
Embodiment
By particular specific embodiment, execution mode of the present utility model is described below, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by the disclosed content of this specification.
Refer to Fig. 1 to Fig. 2.Notice, appended graphic the illustrated structure of this specification, ratio, size etc., all contents in order to coordinate specification to disclose only, understand and read for person skilled in the art scholar, not in order to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, all should still drop on the technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, in this specification, quote as " on ", the term of D score, " left side ", " right side ", " centre " and " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, changing under technology contents, when being also considered as the enforceable category of the utility model without essence.
As shown in Figure 2, the utility model provides a kind of bipolar grid low-voltage power device epitaxial wafer, this bipolar grid low-voltage power device is silicon by the material of epitaxial wafer, bipolar grid low-voltage power device epitaxial wafer is layer structure, is followed successively by from bottom to top substrate 3, the first epitaxial loayer 1 and the second epitaxial loayer 2.
The doped chemical of substrate 3 is boron atom, and the doped chemical of the first epitaxial loayer 1 is arsenic atom or antimony atoms, and the doped chemical of the second epitaxial loayer 2 is boron atom.Because the phenomenon of autodoping can occur each atom, therefore, at the contact-making surface near zone of the first epitaxial loayer 1 contacting with substrate 3, form substrate-extension transition region.
Being doped to substrate 3 tops that boron atom and resistivity is less than 0.002ohm-cm is first epitaxial loayers 1 that one deck is doped to arsenic atom or antimony atoms, the first epitaxial loayer 1 is as transition zone, thickness is 3～4 μ m, resistivity is less than 0.01ohm-cm, because the doped chemical of this one deck is arsenic atom or antimony atoms, the autodoping speed of arsenic atom or antimony atoms all will be lower than boron atom, therefore the autodoping of boron atom in substrate 3 effectively can be suppressed to this one deck, due to the low-resistivity of the first epitaxial loayer 1, therefore the energy consumption of this layer of generation is lower simultaneously.The first epitaxial loayer 1 top is that the thickness that is doped to the second epitaxial loayer 2, the second epitaxial loayers 2 of boron atom is 1～4 μ m, resistivity 0.01～0.05ohm-cm.Adopt the method for two-layer epitaxial loayer both to meet Liao Hou road and design the requirement to epitaxy layer thickness and resistivity, the problem that resistivity evenness and substrate-extension transition region broaden simultaneously also can solve.
In epitaxy machine platform due to processing epitaxial loayer, conventionally there is memory effect, be that doping ion in previous round technique can be accumulated in epitaxy machine platform and is brought in next round technique and goes, and then the adverse effect that has caused the resistivity evenness variation of next round extension and substrate-extension transition region is broadened, especially in the time that front and back wheel technique doping ion concentration differs more than 10 times, it is especially outstanding that this adverse effect can become, and therefore the utility model is preferably as follows processing method:
First use large batch of first epitaxial loayer 1 of growing of epitaxy machine platform on substrate 3, re-use another epitaxy machine platform long second epitaxial loayer 2 on the first epitaxial loayer 1, or same epitaxy machine platform is carried out after thoroughly cleaning to long the second epitaxial loayer 2 on the first epitaxial loayer 1.The demand of road processing after this epitaxial wafer utilizes this long crystal method to meet, improves epilayer resistance rate uniformity and substrate-extension transition region narrows.
When concrete enforcement, use that one chip is outer extends long the first epitaxial loayer 1 on brilliant stove is less than 0.002ohm-cm substrate 3 in doped with boron atom and resistivity, the first epitaxial loayer 1 foreign atom is arsenic atom or antimony atoms, thickness 4 μ m, resistivity 0.008ohm-cm, recycling the brilliant stove of the outer prolongation of another one chip long second epitaxial loayer 2, the second epitaxial loayer 2 foreign atoms on the first epitaxial loayer 1 is boron, thickness 4 μ m, resistivity 0.043ohm-cm.So just complete the long brilliant of epitaxial wafer, completed the processing of bipolar grid low-voltage power device epitaxial wafer.
Lift comparative example below beneficial effect of the present invention be described:
Comparative example one:
For ensureing the width of same resistivity evenness and substrate-extension transition region, other condition is with reference to the utility model, but do not use the first epitaxial loayer 1 in the utility model and pass through to increase single epitaxy layer thickness 2 μ m, i.e. long one deck epitaxial loayer only, this epitaxial loayer foreign atom is boron atom, thickness is 6 μ m, resistivity 0.043ohm-cm.Use same voltage tester, power consumption of the present utility model is 70% of the single epitaxial loayer power consumption of contrast groups one;
Comparative example two:
In order to ensure the width of same resistivity evenness and substrate-extension transition region, other condition is with reference to the utility model, but do not grow respectively two-layer epitaxial loayer with the different platform in the utility model, the thickness 2 μ m that need to increase by the second epitaxial loayer 2 are effective, use same board long two-layer epitaxial loayer on substrate 3 simultaneously, ground floor epitaxial loayer foreign atom is arsenic atom, resistivity 0.008ohm-cm, second layer epitaxial loayer foreign atom is boron atom, thickness 6 μ m, resistivity 0.043ohm-cm.In the breakdown voltage test of Hou road, the utility model can bear the voltage tester of 100V, and this contrast groups needs 120V to complete, and efficiency of the present utility model is 120% of this contrast groups.
Comparative example three:
In order to ensure epitaxial loayer efficiency under same voltage, other condition is with reference to the utility model, but do not grow respectively two-layer epitaxial loayer with the different platform in the utility model, use same board long two-layer epitaxial loayer on substrate 3 simultaneously, ground floor epitaxial loayer foreign atom is arsenic atom, resistivity 0.008ohm-cm, and second layer epitaxial loayer foreign atom is boron atom, thickness 4 μ m, resistivity 0.043ohm-cm.In resistivity evenness test, epilayer resistance rate test of the present utility model can reach in 2%, and this contrast groups only can reach in 20%.In the time of follow-up circuit design, use the qualification rate of epitaxial wafer made device of the present utility model can reach 100%, and contrast groups made device qualified product are only 80%.
In sum, bipolar grid low-voltage power device of the present utility model causes the resistivity evenness variation of epitaxial loayer and the defect that substrate-extension transition region broadens with the autodoping effect that epitaxial wafer has successfully overcome substrate 3, has realized the low energy consumption of epitaxial loayer and substrate.So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (6)
1. a bipolar grid low-voltage power device epitaxial wafer, it is characterized in that, described bipolar grid low-voltage power device is silicon by the material of epitaxial wafer, described bipolar grid low-voltage power device epitaxial wafer is layer structure, is followed successively by from bottom to top substrate (3), the first epitaxial loayer (1) and the second epitaxial loayer (2).
2. bipolar grid low-voltage power device epitaxial wafer according to claim 1, is characterized in that, the doped chemical of described substrate (1) is boron or phosphorus.
3. bipolar grid low-voltage power device epitaxial wafer according to claim 1, is characterized in that, the doped chemical of described the first epitaxial loayer (1) is arsenic atom or antimony atoms.
4. bipolar grid low-voltage power device epitaxial wafer according to claim 1, is characterized in that, the doped chemical of described the second epitaxial loayer (2) is boron or phosphorus.
5. bipolar grid low-voltage power device epitaxial wafer according to claim 1, is characterized in that, the thickness of described the first epitaxial loayer (1) is 3～4 μ m.
6. bipolar grid low-voltage power device epitaxial wafer according to claim 1, is characterized in that, the thickness of described the second epitaxial loayer (2) is 1～4 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420047837.7U CN203746859U (en) | 2014-01-24 | 2014-01-24 | Epitaxial wafer for dual-gate low-voltage power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420047837.7U CN203746859U (en) | 2014-01-24 | 2014-01-24 | Epitaxial wafer for dual-gate low-voltage power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203746859U true CN203746859U (en) | 2014-07-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420047837.7U Expired - Lifetime CN203746859U (en) | 2014-01-24 | 2014-01-24 | Epitaxial wafer for dual-gate low-voltage power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203746859U (en) |
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2014
- 2014-01-24 CN CN201420047837.7U patent/CN203746859U/en not_active Expired - Lifetime
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140730 |