CN101150067A - A phosphor adulterated and impurity absorption method - Google Patents
A phosphor adulterated and impurity absorption method Download PDFInfo
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- CN101150067A CN101150067A CNA2007100562935A CN200710056293A CN101150067A CN 101150067 A CN101150067 A CN 101150067A CN A2007100562935 A CNA2007100562935 A CN A2007100562935A CN 200710056293 A CN200710056293 A CN 200710056293A CN 101150067 A CN101150067 A CN 101150067A
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- phosphorus
- diffusion
- silicon chip
- gettering
- absorption method
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Abstract
This invention relates to a miscellaneous-doped phosphate absorption method, in which, a basic region is formed to a silicon chip after B-diffusion, then P-doped pre-diffusion is done to the positive of the silicon chip and P-absorption pre-diffusion is made to the back and finally P-main diffusion is done, and the concentration of the P-doped miscellaneous absorption is higher than that of miscellaneous and phosphate doping and the technology is simplified.
Description
Technical field
The present invention relates to a kind ofly in fabrication of semiconductor device, realize the method for gettering purpose, belong to the semiconductor device processing technology field by mixing phosphorus.
Background technology
Impurity-absorbing technique in the semiconductor device processing technology field comprises that mainly impurity gettering, defective gettering and poly grains boundary gettering etc. are several, and phosphor adulterated and impurity absorption then is the measure a kind of commonly used of impurity gettering.The known technology one relevant with the present invention is to be recorded in " Harbin Institute of Technology's journal " the 2nd phase technical scheme that is called as " dual impurity-absorbing technique " of the 18th～26 page of publishing June nineteen eighty-two, the technical measures that this scheme is taked are that phosphorus in silicon chip back side diffusion one deck high concentration is as the gettering source, in order to prevent to cause escaping of phosphorus because of follow-up high temperature work step such as boron diffusion, thereby not only cause the concentration of gettering source phosphorus to reduce, but also can pollute boiler tube, cause to intersect and stain, the monocrystalline silicon layer that one deck has high density of defects so grow again on this phosphorus-diffused layer, it had both played masking action, prevent escaping of phosphorus, play the effect of defective gettering again.The known technology two relevant with the present invention is the disclosed technical schemes of Chinese invention patent ublic specification of application that are 86104069 and are called " the multiple impurity-absorbing technique of silicon and multiple impurity-absorbed silicon slice " by application number, in order to improve the gettering effect, this scheme growing single-crystal silicon barrier layer, polysilicon gettering layer and monocrystalline silicon Symmicton successively on phosphorus-diffused layer make that described several impurity-absorbing technique is all used.
Summary of the invention
The common issue with that described known technology exists is a complex process, thereby causes the manufacturing cost height of semiconductor device.In order to simplify process for fabrication of semiconductor device when guaranteeing the gettering effect, we have invented a kind of phosphor adulterated and impurity absorption method of the present invention.
The present invention is achieved in that silicon chip forms the base through the boron diffusion work step, does the Doping Phosphorus pre-expansion in the silicon chip front, does gettering phosphorus pre-expansion again at the silicon chip back side, is the phosphorus master at last and expands, and the concentration that gettering is mixed phosphorus is higher than the concentration of mixing phosphorus.
Because the present invention at first carries out boron diffusion, be only each phosphorous diffusion work step then, therefore, after phosphorous diffusion, there is not the high temperature work step, the high concentration phosphorus that is mixed can not escape, thereby avoided the pollution of boiler tube and the intersection that causes in other operation are stain, regrowth monocrystalline silicon barrier layer on the gettering phosphorus-diffused layer again, thus simplified technology.In addition, after the Doping Phosphorus pre-expansion is done in the silicon chip front, wouldn't be corresponding phosphorus master expands, can prevent that the expansion phosphorus district with certain phosphorus concentration is attracted to this expansion phosphorus district with the impurity in the wafer bulk, bring difficulty for back side phosphor adulterated and impurity absorption, thereby help to improve the gettering effect of the present invention's impurity absorption method.Have again, phosphorus gettering mechanism mainly is that phosphorus is subjected to the principal mode foreign atom to form ion pairing because of storehouse, storehouse gravitation with some in silicon, play the effect of fixing these impurity, because the concentration of phosphorus reach a certain height, then produced a large amount of misfit dislocation networks simultaneously, also has the fixedly effect of impurity, and the concentration of phosphorus is high more in the silicon, and the probability that forms ion pairing is big more, the misfit dislocation network density is also big more, and phosphorus gettering effect is remarkable more.Given this, be higher than the concentration of mixing phosphorus because the present invention's method gettering is mixed the concentration of phosphorus, the impurity in the wafer bulk is more prone to the expansion phosphorus district at the silicon chip back side, thereby improves the gettering effect significantly.Adopt the present invention's method, amplify the consistency of amplifying between uniformity and sheet in the silicon chip sheet and obtain bigger improvement, reduced the collector junction leakage current, collector junction reverse breakdown voltage (BVCBO) defective products rate reduces by 4%, and device yield improves more than 15%.It is emphasized that, the present invention's method still can be with Yin Gaowen in fabrication of semiconductor device and in the triple diffusions of substrate, grinding and polishing processing, and absorb expansion phosphorus district, the silicon chip back side in the defective that induces that the silicon chip front face surface produces, with chromic acid corrosion corrosion silicon face front, examine under a microscope the front face surface defective, can see that defect concentration reduces significantly.
Embodiment
The specific embodiment of the present invention is such, is that 1100～1200 ℃ boron diffusion work step advances to before the phosphorous diffusion work step with diffusion temperature.Adopt the solid state of phosphorous source to do the Doping Phosphorus pre-expansion in the silicon chip front, diffusion layer sheet resistance R
S=2.9～3.3 Ω/.Phosphorus oxidation, oxidated layer thickness T
OX=9000 ± 500 .With 450CP photoresist protection frontside oxide layer, use corrosive liquid to rinse silicon chip back side oxide layer.Do gettering phosphorus pre-expansion again at the silicon chip back side, adopt the liquid phosphorus source, diffusion temperature is 1000～1100 ℃, carries gas and phosphorus source total flow is 1.0～2.5 liters/minute, and be 15～50 minutes diffusion time, diffusion layer sheet resistance R
SThe concentration that=2.0～2.4 Ω/, gettering mix phosphorus is higher than the concentration of mixing phosphorus.Be the phosphorus master at last and expand, in knot, realize gettering.
Described gettering phosphorus pre-expansion, concrete technology comprises following several mode:
POCl is adopted in the liquid phosphorus source
3, diffusion temperature is 1000 ℃, carries gas and adopts N
2, with POCl
3Total flow is 2.5 liters/minute, and be 50 minutes diffusion time.
POCl is adopted in the liquid phosphorus source
3, diffusion temperature is 1050 ℃, carries gas and adopts N
2, with POCl
3Total flow is 1.5 liters/minute, and be 30 minutes diffusion time.
POCl is adopted in the liquid phosphorus source
3, diffusion temperature is 1100 ℃, carries gas and adopts N
2, with POCl
3Total flow is 1.0 liters/minute, and be 15 minutes diffusion time.
Claims (6)
1. phosphor adulterated and impurity absorption method, at the phosphorus of silicon chip back side diffusion one deck high concentration as the gettering source, it is characterized in that, silicon chip forms the base through the boron diffusion work step, do the Doping Phosphorus pre-expansion in the silicon chip front, do gettering phosphorus pre-expansion again at the silicon chip back side, be the phosphorus master at last and expand, the concentration that gettering is mixed phosphorus is higher than the concentration of mixing phosphorus.
2. phosphor adulterated and impurity absorption method according to claim 1 is characterized in that, adopts the solid state of phosphorous source to do the Doping Phosphorus pre-expansion in the silicon chip front, diffusion layer sheet resistance R
S=2.9～3.3 Ω/.
3. phosphor adulterated and impurity absorption method according to claim 1 is characterized in that, does gettering phosphorus pre-expansion at the silicon chip back side, adopt the liquid phosphorus source, diffusion temperature is 1000～1100 ℃, carries gas and phosphorus source total flow is 1.0～2.5 liters/minute, be 15～50 minutes diffusion time, diffusion layer sheet resistance R
S=2.0～2.4 Ω/.
4. phosphor adulterated and impurity absorption method according to claim 3 is characterized in that, POCl is adopted in the liquid phosphorus source
3, diffusion temperature is 1000 ℃, carries gas and adopts N
2, with POCl
3Total flow is 2.5 liters/minute, and be 50 minutes diffusion time.
5. phosphor adulterated and impurity absorption method according to claim 3 is characterized in that, POCl is adopted in the liquid phosphorus source
3, diffusion temperature is 1050 ℃, carries gas and adopts N
2, with POCl
3Total flow is 1.5 liters/minute, and be 30 minutes diffusion time.
6. phosphor adulterated and impurity absorption method according to claim 3 is characterized in that, POCl is adopted in the liquid phosphorus source
3, diffusion temperature is 1100 ℃, carries gas and adopts N
2, with POCl
3Total flow is 1.0 liters/minute, and be 15 minutes diffusion time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100562935A CN100505181C (en) | 2007-11-09 | 2007-11-09 | A phosphor adulterated and impurity absorption method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100562935A CN100505181C (en) | 2007-11-09 | 2007-11-09 | A phosphor adulterated and impurity absorption method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101150067A true CN101150067A (en) | 2008-03-26 |
| CN100505181C CN100505181C (en) | 2009-06-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100562935A Active CN100505181C (en) | 2007-11-09 | 2007-11-09 | A phosphor adulterated and impurity absorption method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667605B (en) * | 2009-09-03 | 2011-09-21 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chip |
| CN103117328A (en) * | 2013-02-01 | 2013-05-22 | 内蒙古日月太阳能科技有限责任公司 | Phosphorous gettering method of metallurgy polycrystalline silicon wafer, silicon wafer and solar cell prepared by silicon wafer |
| CN103208564A (en) * | 2013-04-11 | 2013-07-17 | 浙江正泰太阳能科技有限公司 | Method for preparing crystalline silicon solar cell |
| CN107170664A (en) * | 2017-05-16 | 2017-09-15 | 扬州晶新微电子有限公司 | A kind of manufacturing process of substrate diffusion sheet |
-
2007
- 2007-11-09 CN CNB2007100562935A patent/CN100505181C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101667605B (en) * | 2009-09-03 | 2011-09-21 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chip |
| CN103117328A (en) * | 2013-02-01 | 2013-05-22 | 内蒙古日月太阳能科技有限责任公司 | Phosphorous gettering method of metallurgy polycrystalline silicon wafer, silicon wafer and solar cell prepared by silicon wafer |
| CN103117328B (en) * | 2013-02-01 | 2016-05-25 | 内蒙古日月太阳能科技有限责任公司 | Silicon chip and solar cell that metallurgy polycrystalline silicon sheet phosphorus impurity absorption method and this method are made |
| CN103208564A (en) * | 2013-04-11 | 2013-07-17 | 浙江正泰太阳能科技有限公司 | Method for preparing crystalline silicon solar cell |
| CN103208564B (en) * | 2013-04-11 | 2016-01-20 | 浙江正泰太阳能科技有限公司 | A kind of preparation method of crystal silicon solar energy battery |
| CN107170664A (en) * | 2017-05-16 | 2017-09-15 | 扬州晶新微电子有限公司 | A kind of manufacturing process of substrate diffusion sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100505181C (en) | 2009-06-24 |
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| C14 | Grant of patent or utility model | ||
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| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20080326 Assignee: JILIN MAGIC SEMICONDUCTOR CO., LTD. Assignor: JILIN SINO-MICROELECTRONICS Co.,Ltd. Contract record no.: 2013220000022 Denomination of invention: A phosphor adulterated and impurity absorption method Granted publication date: 20090624 License type: Exclusive License Record date: 20131203 |
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