CN100474549C - Preparation method of extension testing piece - Google Patents

Preparation method of extension testing piece Download PDF

Info

Publication number
CN100474549C
CN100474549C CNB2006100308412A CN200610030841A CN100474549C CN 100474549 C CN100474549 C CN 100474549C CN B2006100308412 A CNB2006100308412 A CN B2006100308412A CN 200610030841 A CN200610030841 A CN 200610030841A CN 100474549 C CN100474549 C CN 100474549C
Authority
CN
China
Prior art keywords
preparation
extension
oxide layer
testing piece
extension testing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100308412A
Other languages
Chinese (zh)
Other versions
CN101140891A (en
Inventor
张洪伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Hua Hong NEC Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Hua Hong NEC Electronics Co Ltd filed Critical Shanghai Hua Hong NEC Electronics Co Ltd
Priority to CNB2006100308412A priority Critical patent/CN100474549C/en
Publication of CN101140891A publication Critical patent/CN101140891A/en
Application granted granted Critical
Publication of CN100474549C publication Critical patent/CN100474549C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention discloses a preparation method for extension test piece, which comprises steps as follows: first, selecting the test piece; second, laser printing VOL volume; third, cleaning the test piece; fourth, oxide layer growing; fifth, photoetching and forming high-density window; sixth, injecting stibium; seventh, diffusion impelling and annealing; eighth, eliminating oxide layer and cleaning it; ninth, extension growing; tenth, measuring the film thickness and electric resistance, which can be achieved on only test piece. The invention can improve the capacity and lower the production cost.

Description

The preparation method of extension testing piece
Technical field
The present invention relates to a kind of preparation method of semiconductor test sheet, relate in particular to a kind of preparation method of extension testing piece.
Background technology
In existing epitaxy technique, need to measure the thickness and the resistivity of extension, because the test condition difference needs directly to carry out epitaxy technique on the substrate slice of two kinds of different conditions, and measure the thickness and the resistivity of extension.For example; 8 " the thickness of extension and resistivity are to measure on two kinds of different substrate slices respectively, thickness need be measured (resistivity is 0.003-0.01ohm.cm) having on the substrate slice of high concentration, resistivity need with the substrate slice of extension transoid on measure (resistivity is 2.0-10.0ohm.cm).As shown in Figure 1, existing epitaxy technique flow process is: at first select test pieces (testwafer), carry out epitaxial growth then, measure the thickness and the resistivity of extension at last.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of preparation method of extension testing piece, and this method can only be finished the thickness of extension and the measurement of resistivity on a slice test pieces, and can improve equipment capacity and reduce production costs.
For solving the problems of the technologies described above, the invention provides a kind of preparation method of extension testing piece, comprise the steps: at first to select test pieces, carry out epitaxial growth then, measure the thickness and the resistivity of extension at last, after selecting test pieces, carry out also comprising the steps: the first step before the epitaxial growth laser printing sheet number; In second step, clean test pieces; The 3rd step, oxide layer growth; In the 4th step, photoetching also forms the high concentration window; In the 5th step, antimony injects; In the 6th step, diffusion advances and annealing; In the 7th step, oxide layer is removed and is cleaned.
Second step was used particle and the metal pollutant on the standard cleaning liquid removing test pieces.
The 3rd step was adopted wet oxidation 40 minutes, the oxide layer of 7000 dusts of growing under 1100 ℃ of conditions.
High concentration window described in the 4th step is 10 * 10cm, and 9 windows are arranged.
The resistivity of each window is in the 5th step
Figure C200610030841D0004153013QIETU
, the dosage that antimony injects is 50Kev.
In the 6th step, adopt the oxide layer of wet oxidation growth in 20 minutes 3500 dusts under 1100 ℃ of conditions, the nitrogen diffusion is 300 minutes under 1250 ℃ of conditions, and n 2 annealing is 30 minutes under 1250 ℃ of conditions.
The 7th step was adopted NH 4The mixed liquor of F and HF is removed oxide layer, adopts standard cleaning liquid eliminating particle.
Compare with prior art, the present invention has following beneficial effect: the present invention can only finish the thickness of extension and the measurement of resistivity on a slice test pieces, and can improve equipment capacity and reduce production costs.Calculate to carry out secondary test run (test period) every day, one three chamber equipment can improve output 2 * 3 * 365 * 0.95=2080 (sheet) in 1 year; Carrying out the second test computation of Period every day, one three chamber equipment, the 2080 * 40=83 that can reduce production costs in a year, 200dollars (dollar).
Description of drawings
Fig. 1 is the flow chart of existing technology;
Fig. 2 is the distribution schematic diagram of high concentration window of the present invention;
Fig. 3 is a process chart of the present invention.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
As shown in Figure 3, the step of preparation extension testing piece comprises:
Step 1 is selected test pieces, for example, uses P type or the N type substrate slice of resistivity as 2-10ohm.cm;
Step 2, laser printing sheet number;
Step 3 is cleaned test pieces, for example uses standard cleaning liquid SC1 to remove Particle (particle), uses standard cleaning liquid SC2 to remove metal pollutant;
Step 4, oxide layer growth for example adopted wet oxidation (Wet Oxide) 40 minutes, the oxide layer of 7000 dusts of growing under 1100 ℃ of conditions;
Step 5, photoetching also forms the high concentration window, for example, according to the test position requirement, makes 9 high concentration windows on substrate slice, and as shown in Figure 2, this high concentration window is 10 * 10cm, and the center is as follows:
Window 1.-8,0 0 Window 2. 45,0 0Window 3.-45,90 0
Window 4.-45,0 0 Window 5. 45,90 0 Window 6. 90,0 0
Window 7.-90,90 0Window 8.-90,0 0 Window 9. 90,90 0
Step 6, antimony injects, the resistivity of each window , dosage=3E15Energy (energy)=50Kev that antimony injects;
Step 7, diffusion advance and annealing, adopt the oxide layer of wet oxidation growth in 20 minutes 3500 dusts under 1100 ℃ of conditions, and the nitrogen diffusion is 300 minutes under 1250 ℃ of conditions, and n 2 annealing is 30 minutes under 1250 ℃ of conditions;
Step 8, oxide layer are removed and are cleaned, and adopt BOE (NH 4The mixed liquor of F and HF) removes oxide layer, adopt standard cleaning liquid SC1 eliminating particle.
Step 9 is carried out epitaxial growth;
Step 10, the thickness and the resistivity of measurement extension.
Use the method, can be in the test of window place thickness, nearby position measurement resistivity.Wherein, for the epitaxial growth of N type, use P type substrate slice; For the epitaxial growth of P type, use N type substrate slice.

Claims (7)

1, a kind of preparation method of extension testing piece, comprise the steps: at first to select test pieces, carry out epitaxial growth then, measure the thickness and the resistivity of extension at last, it is characterized in that, after selecting test pieces, carry out also comprising the steps: the first step before the epitaxial growth laser printing sheet number; In second step, clean test pieces; The 3rd step, oxide layer growth; In the 4th step, photoetching also forms the high concentration window; In the 5th step, antimony injects; In the 6th step, diffusion advances and annealing; In the 7th step, oxide layer is removed and is cleaned.
2, the preparation method of extension testing piece as claimed in claim 1 is characterized in that, second step was used particle and the metal pollutant on the standard cleaning liquid removing test pieces.
3, the preparation method of extension testing piece as claimed in claim 1 is characterized in that, the 3rd step was adopted wet oxidation 40 minutes, the oxide layer of 7000 dusts of growing under 1100 ℃ of conditions.
4, the preparation method of extension testing piece as claimed in claim 1 is characterized in that, the high concentration window described in the 4th step is 10 * 10cm, and 9 windows are arranged.
5, the preparation method of extension testing piece as claimed in claim 1 is characterized in that, the resistivity of each window is 16ohm/ in the 5th step, and the dosage that antimony injects is 50Kev.
6, the preparation method of extension testing piece as claimed in claim 1, it is characterized in that, in the 6th step, under 1100 ℃ of conditions, adopt the oxide layer of wet oxidation growth in 20 minutes 3500 dusts, the nitrogen diffusion is 300 minutes under 1250 ℃ of conditions, and n 2 annealing is 30 minutes under 1250 ℃ of conditions.
7, the preparation method of extension testing piece as claimed in claim 1 is characterized in that, the 7th step was adopted NH 4The mixed liquor of F and HF is removed oxide layer, adopts standard cleaning liquid eliminating particle.
CNB2006100308412A 2006-09-05 2006-09-05 Preparation method of extension testing piece Expired - Fee Related CN100474549C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2006100308412A CN100474549C (en) 2006-09-05 2006-09-05 Preparation method of extension testing piece

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006100308412A CN100474549C (en) 2006-09-05 2006-09-05 Preparation method of extension testing piece

Publications (2)

Publication Number Publication Date
CN101140891A CN101140891A (en) 2008-03-12
CN100474549C true CN100474549C (en) 2009-04-01

Family

ID=39192762

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100308412A Expired - Fee Related CN100474549C (en) 2006-09-05 2006-09-05 Preparation method of extension testing piece

Country Status (1)

Country Link
CN (1) CN100474549C (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103000545B (en) * 2011-09-13 2016-06-01 康可电子（无锡）有限公司 Phosphorus/boron prediffused technique multiplexing method of test sheet
CN105552003B (en) * 2015-12-25 2019-02-05 上海华虹宏力半导体制造有限公司 Resistivity monitoring method in the production of p-type epitaxial wafer
CN112185837A (en) * 2020-09-29 2021-01-05 上海华虹宏力半导体制造有限公司 Screening method of test piece and monitoring method of rapid thermal processing technology
CN116525416B (en) * 2023-06-09 2023-11-07 中电科先进材料技术创新有限公司 Pretreatment method of silicon epitaxial wafer

Also Published As

Publication number Publication date
CN101140891A (en) 2008-03-12

Similar Documents

Publication Publication Date Title
Steinhauser et al. Excellent surface passivation quality on crystalline silicon using industrial‐scale direct‐plasma TOPCon deposition technology
CN100474549C (en) Preparation method of extension testing piece
CN101399200B (en) Method for manufacturing silicon diode PN junction by same diffusion process of P and N paper sources
CN101976702B (en) Manufacturing process and structure of selective emitter solar cell
CN101645399B (en) Voltage stabilizing diode manufacturing process
CN111641387B (en) Method for testing metal contact composite value and solar cell
Cabrera et al. Impact of excess phosphorus doping and Si crystalline defects on Ag crystallite nucleation and growth in silver screen‐printed Si solar cells
CN105609549A (en) Bi-directional discharge tube chip and manufacturing method thereof
CN101187065A (en) Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatment
CN106062937A (en) Epitaxial wafer manufacturing method and epitaxial wafer
CN108022934A (en) A kind of preparation method of film
Wehmeier et al. Boron-doped PECVD silicon oxides as diffusion sources for simplified high-efficiency solar cell fabrication
CN100440489C (en) A porous silicon chip and its preparing method
CN109449251A (en) A kind of preparation method of selective emitter of solar battery
CN102157616B (en) Wash solution for removing laser damage layers
CN102332500A (en) Gettering process for solar cell fabrication
CN102062733A (en) Method for detecting surface residues of solar silicon wafer after cleaning
Cornagliotti et al. Integration of inline single-side wet emitter etch in PERC cell manufacturing
CN101931030A (en) Preparation technology of nano-modified polysilicon solar cell with high efficiency and low cost
Bouhafs et al. N+ silicon solar cells emitters realized using phosphoric acid as doping source in a spray process
CN107686779A (en) Semiconductor cleaning agent for silicon microsection and preparation method thereof
CN105247669A (en) Semiconductor wafer evaluation method
CN107180881A (en) A kind of preparation method of p-type monocrystalline solar cells
CN105304746A (en) Heterojunction solar cell and preparation method thereof
Ebong et al. Formation of high quality screen-printed contacts to homogeneous high sheet resistance emitters (HHSE)

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING

Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI

Effective date: 20131216

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI

TR01 Transfer of patent right

Effective date of registration: 20131216

Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399

Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge

Patentee before: Shanghai Huahong NEC Electronics Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090401

Termination date: 20200905