CN100474549C - Preparation method of extension testing piece - Google Patents
Preparation method of extension testing piece Download PDFInfo
- Publication number
- CN100474549C CN100474549C CNB2006100308412A CN200610030841A CN100474549C CN 100474549 C CN100474549 C CN 100474549C CN B2006100308412 A CNB2006100308412 A CN B2006100308412A CN 200610030841 A CN200610030841 A CN 200610030841A CN 100474549 C CN100474549 C CN 100474549C
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- preparation
- extension
- oxide layer
- testing piece
- extension testing
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100308412A CN100474549C (en) | 2006-09-05 | 2006-09-05 | Preparation method of extension testing piece |
Applications Claiming Priority (1)
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CNB2006100308412A CN100474549C (en) | 2006-09-05 | 2006-09-05 | Preparation method of extension testing piece |
Publications (2)
Publication Number | Publication Date |
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CN101140891A CN101140891A (en) | 2008-03-12 |
CN100474549C true CN100474549C (en) | 2009-04-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2006100308412A Expired - Fee Related CN100474549C (en) | 2006-09-05 | 2006-09-05 | Preparation method of extension testing piece |
Country Status (1)
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CN (1) | CN100474549C (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103000545B (en) * | 2011-09-13 | 2016-06-01 | 康可电子(无锡)有限公司 | Phosphorus/boron prediffused technique multiplexing method of test sheet |
CN105552003B (en) * | 2015-12-25 | 2019-02-05 | 上海华虹宏力半导体制造有限公司 | Resistivity monitoring method in the production of p-type epitaxial wafer |
CN112185837A (en) * | 2020-09-29 | 2021-01-05 | 上海华虹宏力半导体制造有限公司 | Screening method of test piece and monitoring method of rapid thermal processing technology |
CN116525416B (en) * | 2023-06-09 | 2023-11-07 | 中电科先进材料技术创新有限公司 | Pretreatment method of silicon epitaxial wafer |
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2006
- 2006-09-05 CN CNB2006100308412A patent/CN100474549C/en not_active Expired - Fee Related
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Publication number | Publication date |
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CN101140891A (en) | 2008-03-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090401 Termination date: 20200905 |